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Experiment #5 Pressure Transducers / Gages:

http://egweb.mines.edu/eggn250/exp5.htm
Expt 5 -- Omega PX 236 Pressure Transducer
-1.00E-03
0.00E+00
1.00E-03
2.00E-03
3.00E-03
4.00E-03
5.00E-03
6.00E-03
7.00E-03
8.00E-03
9.00E-03
1.00E-02
0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 40.00 45.00 50.00
Pressure (psig)
V
o
l
t
a
g
e

(
v
)
Note:
Max Pressure at Each Lab Bench Station in TLM !"5
Spring #$%
3 52 psig 4 45 psig 9 46 psig 10 22 psig
2 53 psig 5 31 psig 8 45 psig 11 45 psig
1 50 psig 6 37 psig 7 46 psig 12 46 psig
Avoid using benhes 5! 6! " 10 #o$ %xpt. 5! so the students &n obt&in & '&$ge$ $&nge o#
d&t&.
(hese p$essu$es h&ven)t h&nged sine *&'' )02.
Experiment #5 Pre&ab:
#!'
in short(
pressure to stress:
Te stress on a circular sur!ace "ose outer edge is supported and as a
uni!orm load over te entire area is#
= (3$%&')(pa
2
%T
2
)(
"ere#
p ) di!!erential pressure(
*ote#
+i!!erential pressure ) inside p , outside p ) gage pressure ) psig
Outside pressure#
ttp#%%"""-sr-noaa-gov%data%!orecasts%.O/'3$-pp0
"arncount1).O.'5$2cit1)3olden
ttp#%%"""-cr-noaa-gov%den%products%"e4pres-tml
54solute pressure ) inside pressure( or pressure measured relative to a
vacuum ) psia
a ) radius ) '-65 in
T ) tic7ness ) '-'3 in
Stress to strain: )emember* E + stress o,er strain
-se .oung/s modu&us E + !01!$
0
psi 2this is inbet3een ,a&ues 4or brass
and copper' 2see
http://3335csuchico5edu/67pgreene/itec!$8/m!$89c!"/ts&d$!55htm'
Strain: use ca&cs 4rom pre,ious &abs(
Gage 4actor + "5:
#5* #0:
go to the re4erence on: http://eg3eb5mines5edu/eggn"5$/
read through the error stu44(
Lab report:
#! ; #8 ' Bourdon tube pressure gauge5 Put these bac< together 3hen =ou are
done 4or the next section to use>
#5 ' Measure pressure 3ith the P?"%0 pressure transducer 3hi&e simu&taneous&=
measuring @out 4rom the SM A bridge(
#:' . ) .89( O ) omega
- .ec7 !or 1steresis#
3et data points "ile 4ot loading and unloading te gage
- .ec7 !or repeata4ilit1#
3et t"o sets o! data ta7en 41 t"o di!!erent people
:se tis spreadseet#
Point Vout R/R strain
Pressure
(gage) Pressure
!" #$ega !" !" gage !" - %a&% #$ega - %a&% a's
1
2
3
8o" te e;uations tat 1ou are using in te spreadseet<<
#!$' This one is 3orth "$ points B do a good 7ob>
#!%' P&astic ,s e&astic de4ormation(
#!0' st$ing + 'ette$s ,&b! '&be's on g$&phs! et.-
intege$ + 1! 2! 3! + b'ue 'ines
.oo'e&n + t$ue/*&'se! /n/o##! g$een stu##
#'o&ting point + 1.32567410 + o$&nge stu##
&$$&1 + o'umn o# numbe$s
Experiment 5 B Big Picture* orrections* Guidance C PreLab De&p
2o #&$! 1ou)ve expe$imented with & oup'e o# e'et$o3meh&ni&' devies! (he$misto$s
&nd 2t$&in 4&ges. And 1ou)ve used them to me&su$e seve$&' use#u' meh&ni&'
p$ope$ties: tempe$&tu$e! tempe$&tu$e senso$ $esponse! &nti'eve$ be&m $esponse to #o$e
&nd vib$&tion! &nd oe##iient o# the$m&' exp&nsion #o$ 2 di##e$ent m&te$i&'s.
Big Picture: *o$ this expe$iment 1ou wi'' be wo$5ing with & 6ew %'et$omeh&ni&'
7evie 8 & Pressure Transducer. 9ou)'' be me&su$ing the $esponse #$om 2 t$&nsdue$s
simu't&neous'1! omme$i&' ,/:%4A- &nd homem&de ,;2:-. (he Domemade one
uses & b$&ss o$ oppe$ p'&te with & bonded metallic Strain Gage
1
! whe$e&s the
ommercia& one uses & semi-conductor Strain Gage
2
,mo$e in#o in '&ss-.
A < .$idge ;i$uit wi'' be $e=ui$ed #o$ the ;2: p$essu$e t$&nsdue$. (he omme$i&'
t$&nsdue$)s b$idge i$uit is on & si'ion hip inside! but 1ou wi'' need to supp'1 &n
exit&tion vo't&ge! obt&in the output vo't&ge! &nd g$ound it! o# ou$se.
Experiment 5 B orrections/&ari4ications to Lab Manua&
1- 7$. >ing h&s m&de some use#u' &dditions to the 'ist o# $e#e$ene m&te$i&' " #ixed
some o# the e$$o$s with this '&b. (h&n5s 7$. >ing. ?se the $e#e$enes 'isted! esp.
:&t@eb! &nd ;u$$ent Atmosphe$i A$essu$e.
2- @e &tu&''1 h&ve on'1 /ne /:%4A p$essu$e t$&nsdue$. (he AB3236. (his
mode' h&s been disontinued &t /:%4A! so 1ou won)t #ind spei#is &t the
omeg& website. 2ee C2ome ?se#u' Dn#oE be'ow.
3- (he ;2: A$essu$e t$&nsdue$ is m&de using eithe$ & $ound b$&ss o$ & s=u&$e
oppe$ p'&te! &s shown in '&ss '&st wee5. Foweve$! i# 1ou use the ;oppe$
in#o$m&tion given in the m&nu&' it wi'' send 1ou to the $ight v&'ue #o$ 9oung)s
:odu'us ,%-. An1 o# the st&tes given ,o'd d$&wn! o'd wo$5ed o$ &nne&'ed- wi''
1ie'd the s&me v&'ue #o$ %.
4- ?se the p'&te thi5ness! ( + 0.035E st&ted on the A$essu$e sheet! pg. 158! ve$sus
the 0.03E in the expe$iment w$ite3up.
1
(his is the t1pe we)ve been using so #&$. (he #ine met&''i #oi' bonded to & po'1imide b&5ing.
2
(his t1pe h&s &n &dv&nt&ge o# being muh mo$e sensitive " muh sm&''e$ th&n the bonded metallic t1pe.
(he1 &$e t1pi&''1 m&de #$om 2i'ion th&t is doped with & semi3met&''i &tom! 'i5e .o$on. And the si'ion
is ethed to the desi$ed sh&pe &nd siGe.
Experiment 5 B Some -se4u& En4o
1- For the GMEGH ?;ducer 33 9ou)'' need the Speci4ications and Hpp&ication
Notes. (he1 &$e on p&ges .314 &nd H314 o# the /:%4A m&nu&'s in the b&5 o#
the '&b.
&. Iohn 21nho$st h&s been nie enough to m&5e & doub'e3sided op1 #o$ e&h
:%J D student.
b. (he1 &$e on the t&b'e $ight inside the doo$ o# ;(J: 125.
. 9ou &n go b1 sometime tonight ,(ues- be#o$e 8 A: o$ @ed 10:30 A: 8
5 A: to pi5 one up.
2- (he spe sheet 'ists the p$essu$e $&nge! m&x vo't&ge output! &nd mode'K. (he
mode' K on this t$&nsdue$ is "%0P!5$G @.
&. /:%4A t$&nsdue$,s- spei#ied exit&tion vo't&ge is 10 vo'ts. @e use 5
vo'ts exit&tion. (he$e#o$e ou$ m&ximum output &t 150 psig wou'd be 30
mL! not 60.
AB 236 03150 psig 60 mL M 10 L ,exit&tion-
AB 236 03150 psig 30 mL M 5 L ,exit&tion-
(he e=u&tion &t the bottom o# the sheet shows the sensitivit1 with this 5L
exit&tion.
3- (he &pp'i&tion notes ,pg H314- des$ibe 'ine&$it1! sensitivit1! h1ste$esis! Ge$o
,nu''-! &nd $epe&t&bi'it1 e$$o$s. (he1 &'so de#ine Abso'ute! 7i##e$enti&' &nd 4&ge
p$essu$e.
4- /ne othe$ impo$t&nt note. D wou'd $e&d the p&ge on 4$ounding! i# 1ou h&ven)t
&'$e&d1. (he d&t& t&5ing! espei&''1 #o$ the ;2: t$&nsdue$! wi'' be next to
impossib'e without p$ope$ g$ounding o# 1ou$ i$uit.
Experiment 5 B De&p on PreLab Iuestions
N1- ?se &tmosphe$i p$essu$e &t Ie## ;o &i$po$t #$om the 6/AA website
given! unde$ &ddition&' $e#e$ene m&te$i&'. ?se g&ge p$essu$e #o$ p.
Oemembe$ th&t % + /! o$ +/%. ?se the :&t@eb site to #ind % #o$
oppe$ ,;u-. 9ou m&1 h&ve to $eview 1ou$ notes on st$&in g&ges &nd <
b$idge &'u'&tions #o$ Lout. (he 4&ge #&to$ on this st$&in g&ge is 2.07!
&s st&ted on the p$essu$e sheet.
Genera&
2emionduto$ st$&in g&ges &$e devies whih v&$1 in $esist&ne &s st$&in is &pp'ied to them.
(his p$ope$t1 m&5es them ve$1 use#u' in me&su$ing ext$eme'1 sm&'' &mounts o# #o$e with
&u$&1 &nd p$eision. ;$e&tive uses #o$ these g&ges h&ve $&nged #$om the me&su$ement o#
inte$n&' p$essu$es inside so'id $o5et engines to de'i&te medi&' &pp&$&tus used in
mi$osu$ge$1.
4&ges m&de #$om semionduto$ m&te$i&'s h&ve &dv&nt&ges ove$ mo$e onvention&' t1pes o#
st$&in g&ges. (hese in'ude homogeneit1! in$e&sed sensitivit1! &nd de$e&sed siGe. 4&ges m&de
b1 :i$on Dnst$uments $&nge down to 0.027P ,0.69 mm- in 'ength.
:i$on semionduto$ st$&in g&ges &$e m&de #$om ;Goho$&'s5i pu''ed bo$on doped bu'5
si'ion. (he1 h&ve no A/6 Quntion. (he si'ion is ethed to sh&pe! e'imin&ting the potenti&' #o$
mo'eu'&$ dis'o&tion o$ $&5s! the$eb1 optimiGing pe$#o$m&ne.
A'' g&ges m&nu#&tu$ed b1 :i$on must p&ss th$ough $igo$ous tests be#o$e the1 &$e &pp$oved
#o$ use b1 ou$ ustome$s. (he beh&vio$ o# e&h g&ge &t di##e$ent tempe$&tu$es is me&su$ed &nd
the g&ges &$e m&thed to e&h othe$ b&sed upon these me&su$ements. ;ustome$s m&1 spei#1
m&thed sets o# 2! 4! o$ mo$e g&ges! o$ pu$h&se unm&thed sets o# bu'5 g&ges.
Bar Semiconductor Strain Gages
Fome
7own'o&d this d&t& sheet
A&$t 6umbe$ B dim 9 dim H dim
Je&d
Att&hment
(hi5ness
Oesist&ne M 78
deg *
4&ge
*&to$
(;4*R (;OR
22302730133
500A
0.027P 0.013P 0.009P .&'' .ond 0.0004P 540 S 50 /hms 155 S 10 318 24
22308030503
120A
0.080P 0.050P 0.008P @e'ded 0.0004P 120 S 20 /hms 120 S 10 39 5
22309030603
500A
0.090P 0.060P 0.008P @e'ded 0.0004P 540 S 50 /hms 140 S 10 313 16
22315031253
25A
0.150P 0.100P 0.009P @e'ded 0.0008P 25 S 3 /hms 100 S 10 310 6
22325032253
120A
0.250P 0.225P 0.009P @e'ded 0.0004P 120 S 20 /hms 100 S 10 310 6
R pe$ 100 deg$ees *
J-J;shaped Semiconductor
Strain Gages
A&$t 6umbe$ B dim 9 dim H dim
Je&d
Att&hment
(hi5ness
Oesist&ne M 78
deg *
4&ge
*&to$
(;4*R (;OR
22303730223
500A?
0.037P 0.022P 0.016P @e'ded 0.0004P 540 S 50 /hms 150 S 10 313 17
22304730253
500A?
0.047P 0.025P 0.016P @e'ded 0.0004P 540 S 50 /hms 140 S 10 313 16
22306030333
300A?
0.060P 0.033P 0.016P @e'ded 0.0004P 325 S 40 /hms 100 S 10 310 6
22306030333
500A?
0.060P 0.033P 0.016P @e'ded 0.0004P 540 S 50 /hms 140 S 10 312 14
22306030333
2000A?
0.060P 0.033P 0.016P @e'ded 0.0004P 2000 S 100 /hms 155 S 10 318 24
22308030503
10000A?
0.080P 0.050P 0.013P @e'ded 0.0004P
10000 S 1000
/hms
175 S 10 323 42
22309530603
350A?
0.095P 0.060P 0.016P @e'ded 0.0004P 350 S 50 /hms 120 S 10 39 5
R pe$ 100 deg$ees *

JMJ;shaped Semiconductor Strain
Gages
A&$t 6umbe$ B dim 9 dim H dim
Je&d
Att&hment
(hi5ness
Oesist&ne M 78
deg *
4&ge
*&to$
(;4*R (;OR
22306030403
25003A:
0.060P 0.040P 0.032P @e'ded 0.0004P 2500 S 150 /hms 140 S 10 313 17
R pe$ 100 deg$ees *

KEFENETEGNS
GAGE FACTOR
(he g&ge #&to$ ,4.*.- o# st$&in g&ge is & dimension'ess numbe$ de#ined b1 the #o$mu'&
4.*. + ,O 3 Om-/O%
whe$e
O + nomin&' unst$&ined $esist&ne o# the g&ge!
Om + the me&su$ed $esist&ne o# the g&ge unde$ some 5nown st$&in! %!
&nd
% + the st$&in on the g&ge.
Thermal Coefcient of Gage Factor (TCGF)
(he (he$m&' ;oe##iient o# 4&ge *&to$ ,(;4*- is due to the$m&' e##ets in the si'ion m&t$ix o#
the st$&in g&ge inhibitiing the #'ow o# e'et$ons. (he #o$mu'& #o$ (;4* is
(;4* + ,100 x ,4*2 3 4*1--/,4*1 x ,(2 3 (1--
whe$e
4*1 + 4&ge #&to$ &t &mbient tempe$&tu$e (1T
4*2 + 4&ge #&to$ &t e'ev&ted tempe$&tu$e (2T
(1 + &mbient tempe$&tu$e ,78 deg *-T
&nd
(2 + e'ev&ted tempe$&tu$e.
Thermal Coefcient of Resistance (TCR)
(he (he$m&' ;oe##iient o# Oesist&ne ,(;O- is &'so due to the$m&' e##ets in the si'ion m&t$ix
&##eting the #'ow o# e'et$ons. (he #o$mu'& #o$ (;O is given b1
(;O + ,100 x ,O2 3 O1--/,O1 x ,(2 3 (1--
whe$e
O1 + Oesist&ne &t &mbient tempe$&tu$e (1T
4*2 + Oesist&ne &t e'ev&ted tempe$&tu$e (2T
(1 + &mbient tempe$&tu$e ,78 deg *-T
&nd
(2 + e'ev&ted tempe$&tu$e.
*o$ #u$the$ in#o$m&tion! $e=uest & set o# st$&in g&ge spei#i&tions #$om ou$ tehni&' suppo$t
st&##.

Strain Gage Technical Data
Strain Gage Measurement
The most universal measuring device for the electrical measurement of mechanical
quantities is the strain gage. Several types of strain gages depend on the proportional
variance of electrical resistance to strain: the piezoresistive or semi-conductor gage,
the carbon-resistive gage, the bonded metallic wire, and foil resistance gages.
The bonded resistance strain gage is by far the most widely used in experimental
stress analysis. These gages consist of a grid of very fine wire or foil bonded to the
bacing or carrier matrix. The electrical resistance of the grid varies linearly with
strain. !n use, the carrier matrix is bonded to the surface, force is applied, and the
strain is found by measuring the change in resistance. The bonded resistance strain
gage is low in cost, can be made with a short gage length, is only moderately affected
by temperature changes, has small physical size and low mass, and has fairly high sensitivity to strain.
!n a strain gage application, the carrier matrix and the adhesive must wor together to transmit the strains from
the specimen to the grid. !n addition, they serve as an electrical insulator and heat dissipator.
The three primary factors influencing gage selection are operating temperature, state of strain "gradient,
magnitude, and time dependence# and stability required.
$ecause of its outstanding sensitivity, the %heatstone bridge circuit is the most frequently used circuit for static
strain measurements. !deally, the strain gage is the only resistor in the circuit that varies and then only due to a
change in strain on the surface.
There are two main methods used to indicate the change in resistance caused by strain on a gage in a
%heatstone bridge. &ften, an indicator will rebalance the bridge, displaying the change in resistance required in
micro-strain. the second method installs an indicator, calibrated in micro-strain, that responds to the voltage
output of the bridge. This method assumes a linear relationship between voltage out and strain, an initially
balanced bridge, and nown ' in. !n reality, the ' out-strain relationship is nonlinear, but for strains up to a few
thousand micro-strain, the error is not significant.
Potential Error Sources
!n a stress analysis application, the entire gage installation cannot be calibrated as can some pressure
transducers. Therefore, it is important to examine potential error sources prior to taing data.
Some gages may be damaged during installation. !t is important therefore to chec the resistance of the strain
gage prior to stress.
(lectrical noise and interference may alter your readings. Shielded leads and adequately insulating coatings may
prevent these problems. ) value of less than *++ , ohms "using an ohmmeter# usually indicates surface
contamination.
Thermally induced voltages are caused by thermocouple effects at the -unction of dissimilar metals within the
measurement circuit. ,agnetically induced voltages may occur when the wiring is located in a time varying
magnetic field. ,agnetic induction can be controlled by using twisted lead wires and forming minimum but equal
loop areas in each side of the bridge.
Temperature effects on gage resistance and gage factor should be compensated for as well. This may require
measurement of temperature at the gage itself, using thermocouples, thermistors, or .T/s. ,ost metallic gage
alloys, however, exhibit a nearly linear gage factor variation with temperature over a broad range which is less
than 012 within 01++34.
Prime Strain Gage Selection Considerations
5 6age 7ength
5 8umber of 6ages in 6age 9attern
5 )rrangement of 6ages in 6age 9attern
5 6rid .esistance
5 Strain Sensitive )lloy
5 4arrier ,aterial
5 6age %idth
5 Solder Tab Type
5 4onfiguration of Solder Tab
5 )vailability
Strain gage dimensions
The active grid length, in the case of foil gages, is the net grid length without the tabs and comprises the return
loops of the wire gages. The carrier, dimensions are designed by &,(6) for the optimum function of the strain
gage.
Strain gage resistance
The resistance of a strain gage is defined as the electrical resistance measured between the two metal ribbons or
contact areas intended for the connection of measurement cables. The range comprises strain gages with a
nominal resistance of 1:+, ;*+, <++, and =++ &hms.
Gage Factor (Strain Sensitivity)
The strain sensitivity of a strain gage is the proportionality factor between the relative change of the resistance.
The strain sensitivity is a figure without dimension and is generally called gage factor.
The gage factor of each production lot is determined by sample measurements and is given on each pacage as
the nominal value with its tolerance. .eference Temperature The reference temperature is the ambient
temperature for which the technical data of the strain gages are valid, unless temperature ranges are given. The
technical data quoted for strain gages are based on a reference temperature of :;34.
Temperature Characteristic
Temperature dependent changes of the specific strain gage grid resistance occur in the applied gage owing to the
linear thermal expansion coefficients of the grid and specimen materials. These resistance changes appear to be
mechanical strain in the specimen. The representation of the apparent strain as a function of temperature is
called the temperature characteristic of the strain gage application. !n order to eep apparent strain through
temperature changes as small as possible, each strain gage is matched during the production to a certain linear
thermal expansion coefficient. &,(6) offers strain gages with temperature characteristics matched to ferritic
steel and aluminum.
Service Temperature Range
The service temperature range is the range of ambient temperature where the use of the strain gages is
permitted without permanent changes of the measurement properties. Service temperature ranges are different
whether static or dynamic values are to be sensed.
Maimum Permitted RMS !ridge Energi"ing #oltage
The maximum values quoted are only permitted for appropriate application on materials with good heat
conduction "e.g., steel of sufficient thicness# if room temperature is not exceeded. !n other cases temperature
rise in the measuring grid area may lead to measurement errors. ,easurements on plastics and other materials
with bad heat conduction require the reduction of the energizing voltage or the duty cycle "pulsed operation#.
T$E STR%&' G%GE &S ('E (F T$E M(ST &MP(RT%'T T(()S of the
electrical measurement technique applied to the measurement of mechanical
quantities. )s their name indicates, they are used for the measurement of
strain. )s a technical term >strain> consists of tensile and compressive strain,
distinguished by a positive or negative sign. Thus, strain gages can be used
to pic up expansion as well as contraction. The strain of a body is always
caused by an external influence or an internal effect. Strain might be caused
by forces, pressures, moments, heat, structural changes of the material and
the lie. !f certain conditions are fulfilled, the amount or the value of the
influencing quantity can be derived from the measured strain value. !n
experimental stress analysis this feature is widely used. (xperimental stress
analysis uses the strain values measured on the surface of a specimen or
structural part to state the stress in the material and also to predict its safety
and endurance. Special transducers can be designed for the measurement of
forces or other derived quantities, e.g., moments, pressures, accelerations,
and displacements, vibrations and others. The transducer generally contains a
pressure sensitive diaphragm with strain gages bonded to it.

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