Part II Electronics 10

N = Ionized acceptor density

_ 12 V
where at T_ 10
= V300 RK: kT
N = Ionized donor density
R
Io = 250 10 A VT = 26 mV
(d)
(c)
The carrier product equation (CPE)
states that as a
+5qV
_cos(t)
semiconductor
doped
vS = 4.2V +is110
5 V the product of the charge
carrier
mV densities remains constant:
a

RRS D

377
rad/s R = 7k
nop=
o=
Constant
R or quiescent point
and the DC operating point
For
intrinsic
silicon
at
T
=
300 K:
(Q point) is:
(e)
_
10
V
Figure
P8.11
Constant = niopio = n = p
IDQ = 0.5458 mA VDQio=io379.5mV
2

Continued

vS

15

VS1 VS2
vS (t)

v
L

10 _
+
4V

Figure P8.7

Figure P8.20
_
In the circuit
of Figure P8.7, vS = 6 V and
+
R1 = RS = RL = 500 . Determine iD and vD
Section
3: Rectiers
graphically, using
theFigure
diode characteristic
of the
P8.14
and
Voltage Supplies
1N461A.
8.15 The diode in the circuit shown in Figure P8.15
8.9 is fabricated
Assume
diode
in
P8.9voltage
requiresfora
8.21
Find
the that
average
valueand:
of Figure
the output
fromthe
silicon
minimum
of P8.21
1 mA to
be above
the kneeisof
its i-v
the circuit current
of Figure
if the
input voltage
sinusoidal
iD = Iof
o(e
characteristic.
with
an amplitude
5 V.
Let1)V = 0.7V.
1
What
where
at Tshould
= 300beK:the
kTvalue of R to establish 5 mA in
the circuit?
100
nF
Io the
= 250
of
10R A
VT = 26inmV
2
With
value
determined
part a, what is
+ + value to which the voltage qE could be reduced
the minimum
S = 4.2Vdiode
+ 110
cos(t)
and stillvmaintain
current
above the knee? Use V =
0.7V. mV
vo(t)

8.8

determine the
equivalent
small-signal
2
1
1AC resistance of
1.5circuit
10of
16 = 2.25
Q10point
32 m3 given.
2
=room
the
diode atIn
temperature
at the
8.12
the
Figure
P8.12,
nd m
the
range of
Vin for which D1 is forward-biased. Assume ideal diodes.
8.18
If the diode in the
circuitis shown
in Figure
P8.15
The semiconductor
material
n-or p-type
depending
is fabricated
fromdonor
silicon
on whether
or and:
acceptor doping is greater.
Almost
k + are ionized at room
v
D/V1]
T 1 atoms
iD = Ioall
[edopant
temperature. If intrinsic
D1 D2Vin silicon is doped:
where at T = 300 K:1 kT
NA N N=d10=170
+
Io = 2.030
m310 A VT =
5 V 26 mV
_
_
q 1 k
Determine:
v
S = 5.3V + 70 cos(t)
1
If this Figure
is an n-or
p-type extrinsic semiconductor.
P8.12
2 mV
Which are the major and which the minority charge
a

+
VD

12

vD /VT

12

vin vout

= 377 rad/s R = 7k

Determine,
using superposition,
the DC or Q point
_
_
R
current through the diode:
= 377 rad/s R = 4.6k
carriers.
a.
Using the DC offset model for the
Determine
which
diodesand
areminority
forwardcarriers.
biased and
Figure P8.21
38.13
densitypoint
of majority
and
the DCThe
operating
or quiescent
point
diode.
E = 5 V I solving the circuit
b.
By
iteratively
which
areis:reverse-biased in the congurations shown in
(Q
point)
characteristic (i.e., the DC load line equation) and the
Figure
P8.13.
Assuming
a
0.7-V
drop
across
each
8.22 In the rectier circuit shown in Figure P8.22, v(t)
8.2 If intrinsic silicon is doped:
device characteristic (i.e., the diode equation).
IDQ = 1.000 mA
VDQ determine
= 0.700 Vthe output voltage.
forward-biased
diode,
= A sin (2100)t V. Assume a forward voltage drop of 0.7
1
1
V across the diodeFigure
when itP8.9
is conducting. If conduction
Naathe

N=
10 Ndsmall-signal
N = 5 AC
10resistance of
determine
3 dequivalent
3
must begin during each positive half-cycle
R at an angle no
the diode at room temperature at the Q point given.
8.10
In 5Figure
sinusoidal
source
of 50
+5 V
greater than
, whatP8.10,
is the aminimum
peak
value,
A, V
that the
Determine:
rms
drives
the
circuit.
Use
the
offset
diode
model
for a
AC
source
must
produce?
8.19
If
the
diode
in
the
circuit
shown
in
Figure
P8.15
1
If this is an n-or p-type extrinsic semiconductor. silicon diode.
+
R D1
is fabricated
from
silicon
2
Which
are and:
the majority and which the minority
1
What is the maximum forward current?

charge
D/VT
V
iD
iD = Icarriers.
o[e v
1] +5
2
What is the peak inverse voltage
across the diode?
_
D
2
5
V
3
The density of majority and minority carriers.
VS
VD
D3
where at T = 300 K:+5kT
V
_5V
Figure P8.15V = 0.7 V
D4 of
8.3
Describe the microscopic
structure
v(t)
Io = 250 10 A VT = 26 mV vout
semiconductor materials. What are the three
(a) most
8.16 If the diode in the circuit shown in Figure P8.15
q
commonly used semiconductor materials?
is fabricated
from
vS = VS + vs = 4.2V + 110 cos(t)
50 V
rms silicon and:
R
8.4 mVDescribe the thermal production of charge
D /VT
+15 V
i
D = Io[e v
1]
carriers in a semiconductor and how this process limits the
220
Figure P8.22
= 377 rad/s R = 7k
operation of a semiconductor
device. R
R
where
at T =
300 K: kT
Figure
P8.10
The DC operating point or quiescent point (Q point)
8.5and the
Describe theDproperties
of donor and acceptor
1
D1
8.23 A half-wave
to provide
an 26 mV
signal
equivalent
resistance
at
this
Io =rectier
2.030 is 10
A VT =
v_out
5V
vout
D2
+5AC
V small
dopant
atoms
and
how
they
affect
the
densities
of
charge
8.11
Determine
diodes
are forward biased and
average voltage
of 50which
V at its
output.
D2
Q point0 are:
q
V
+5 V
10 V
carriers in a semiconductor
material.
which1 are reverse
biased
in each of
the congurations
Draw
a schematic
diagram
of the circuit.
D3
_ 10 V
_
v
S
=
5.3V
+
7
cos(t)
IDQ = 0.548 mA VDQ = 0.365 V rd = 47.45
shown
P8.11.the output voltage waveshape.
2 in Figure
Sketch
8.6
Physically describe the behavior of the charge
mV
HOMEWORK
PROBLEMS
3
Determine
the peak value of the output voltage.
Determine,
using
superposition,
thevicinity
AC voltage
carriers
and ionized
dopant
atoms in the
of a across
Sketch
= 377the
rad/s
R = 4.6k
(b)
(c)
4
input
the diode and
AC current
through
semiconductor
pn the
junction
that causes
the it.
potential
+5 V voltage waveshape.
Section
1:
Semiconductors
Determine,
using
superposition
and
the neutrality
offset (or equation
5
What ischarge.
the rms
voltage at
input?
(energy) barrier
tends to prevent charge carriers from
Figurethat
P8.13
electronic
Therefore
thethe
charge
8.20
Thejunction.
diode in the circuit shown in Figure P8.20
threshold)R voltage model for the Rdiode, the DC or
crossing the
(CNE)
po + through
N +5nVothe
diode.
N = 0 where no =
is fabricated from silicon and:
Q pointis:current
+10 V
8.1
In
a
semiconductor
material,
the
net
charge
is
8.14
Sketch
the
output
waveform
and
the
voltage
Section
2: Diode
Circuit
Equilibrium
negative
Equilibrium
8.17
If the diode
in thecarrier
circuitdensity
shownpino =
Figure
P8.15
R = This
2.2k
VS2 =the
3Vdensity ofModels
zero.
requires
positive
charges
to be
transfer
characteristic
for the circuit
of Figure
P8.14.
is
fabricated
from
silicon
and:
(a)
(b)
positive carrier density
8.7Determine
Find
voltage
vL in
the
circuit
ofS1v
Figure
equal
to the
of
negative
Both
charge
thedensity
minimum
value
ofcharges.
V
atS(t)
and
above
Assume
ideal
diode
characteristics,
=P8.7,
10
sin
D /V1]
T
carriers
electrons
and
holes)
ionized
dopant
wherewhich
D is the
an (free
ideal
diode.
Use
values
v
S<
and >current.
0.
Figure
iD = P8.11
Io[e v
diode
will conduct
withofaand
signicant
(2,000t).
atoms have a charge equal to the magnitude of one

17

18

12

15

8.30 In the
in Figure
1 circuit shown
If the diodes
have8.15:
an offset voltage of 0.6 V, sketch

for AC-DC conversion), fabricated from silicon, with

IL = 85 mA VL = 5.3V Vr =
the input source voltage, vS(t), and the output voltage, vL(t),
the following rated performance:
IL = 600 mA VL = 50 V
and state which diodes are on and which are off in the
0.6V =P377
rad/s Vline = 156
max = 500 mW at T = 25 C
VRappropriate
= 4V C =cycles
1000 of
FvS(t). The frequency of the source is 60
cos(t)VV
Determine the value
pkrev = 30 V
Hz.
vs1(t) = vs2(t) = Vs0 cos(t) = 377 rad/s
2
If RL = 1,000 and a capacitor, placed across Rof:
L
The The
derating
1
turnsfactor
ratio, is
n.3 mW/ C for 25
to provide
some ltering,
has rating
a valueofofone
8 F,
sketch the
The diodes
are silicon.
If the power
of the
C <T
capacitor,
125 C andC.4 mW/ C for
2
The
voltage,
diodesoutput
is exceeded
andvLit(t).
burns out or opens, determine
125 C <T 175 C.
3 values ofRepeat
part
b, with
the capacitance
the new
the DC
output
or load
voltage andequal to 100
1 diodes in
Determine
the actual
peaksupply
reverse voltage across
8.35
The
the full-wave
DC power
F. voltage.
the ripple
each diode.
shown are silicon. If: IL = 250 mA VL = 10 V Vr =
2
Explain why these diodes are or are not suitable for
8.31 In the full-wave power supply shown in Figure
2.4V = 377
the rad/s
specications given.
P8.31 the diodes are 1N4001 with a rated peak reverse

voltage (also called peak inverse voltage) of 50 V. They are

fabricated from silicon.
Vline = 170 cos(377t)V n =
0.2941 C = 700 F RL =
2.5k
1
Determine the actual peak reverse voltage across
each diode.
2
Explain why these diodes are or are not suitable for
P8.24 given.
the Figure
specications

8.27 The diodes in the full-wave DC power supply

in Figure
P8.25
Vshown
line = 156
cos(t)
V are silicon. The load voltage
waveform is shown in Figure P8.27. If:
Determine the value
1
The turns ratio, n.
IL =The
60 mA
VL = 5C.VR = 5% Vline = 170
of:
2
capacitor,
cos(t) V = 377 rad/s determine the
value of:
1
The turns ratio, n.
2
The value of the capacitor, C.

8.25

In the full-wave power supply shown in Figure

P8.25 the diodes are 1N4001 with a rated peak reverse
voltage (also called peak inverse voltage) of 25 V. They are
fabricated
from silicon.
iL
+
Vline

n=
0.05883
C
C = 80 F RL = 1k
D2
Vline = 170 cos(377t)V
D1

VL(t)
VM
VL min

RL VL

1
Determine the actual peak reverse voltage across
Figure
eachP8.31
diode.
2
Explain why these diodes are or are not suitable for
8.32 In the full-wave
power supply
shown in Figure
the specications
given.
P8.31 the diodes are 1N4001 general-purpose silicon
8.28
diodes with a rated peak reverse voltage of 10 V and:
iL

D1

Vline = 156 cos(377t)V

n = 0.04231 Vr = 0.2V
s1
IL = 2.5mA VL = 5.1VV

1
Determine the actual peak reverse voltage across
Vline
C
RL VL
the diodes.

2
Explain why these
+ diodes are or are not suitable for
+ Vs2
the specications given.

8.33 The diodes in the full-wave DC power

supply shown in Figure P8.31 are silicon. If:
+

IL = 650 mA VL = 10 V

Figure P8.25

Vr = 1V = 377 rad/s
In the full-wave power supply shown in
Vline =P8.25:
170 cos(t)
V = 23.66
Figure
n = 0.1

8.26

Figure P8.27

The diodes in the full-wave DC power supply

shown in Figure P8.25 are silicon. If: IL = 600 mA VL =

50 V Vr = 8% = 4V

Vline = 170 cos(t) V = 377 rad/s

determine the value of:
1
The turns ratio, n.
2
The value of the capacitor, C.

8.29

The diodes in the full-wave DC power supply

shown in Figure P8.25 are silicon. If: IL = 5mA VL = 10

V Vr = 20% = 2V

determine the value of the average and peak current

through Ceach
= diode.
80 F RL = 1k Vline
8.34 The=diodes
in the full-wave DC power
170 cos(377t)V
supply shown in Figure P8.31 are silicon. If:
The diodes are 1N914 switching diodes (but used here

8.24

You have been asked to design a full-wave

Vline = 170 cos(t) V = 377 rad/s
bridge rectier for a power supply. A step-down
transformerdetermine
has already
been chosen. It will supply 12 V
the:
Turns
ratio, n.rectier is shown in
rms to your1rectier. The
full-wave
2 Figure P8.24.
The value of the capacitor, C.
the circuit of

Part II Electronics

8.53
5: Find
Other
the output
Diode
voltage
Circuits
of the peak detector
Now we are
going to
charge the
battery, is
using
specications:
circuit
whose
output
to the
be 25 Section
for which
the diode
current
remainsvoltage
within its specied
shown in Figure P8.53. Use sinusoidal input voltages with
circuit
of Figure
P8.52(b).
Repeatvaries
parts a and
b if 35
the
V,
whose
input
voltage
from
z = 12 V rz = 11.5 PRated = 400 mW
values.diode
=has
10 an

5% voltage
rz = 7
iz minV.= 10 mA
6,V1.5,
V and
average
value. Let V
offset
of
0.6
8.50amplitude
Assuming
thatand
the0.4
diodes
arezero
ideal,
determine
toVz40
V,Vand
whose
maximum
load
=
0.7V.
At
knee
of
curve:
and
sketch
the
i-v
characteristics
for
the
circuit
of
Figure
izmax =current
91 mA PRated
= 1W
R=
80
5%diode
IL = 35 used
is 75
mA.
The
Zener
the0.25
range
=v 700
0.
The Rcircuit
i-v
of a semiconductor
diode P8.50. Consider
in this
a maximum
current
S = characteristic
1 RBhas
= 10
izk =
mA10rzk
8.39
10 mA
designed
to
operate
in
the
Zener
breakdown
region
is
+
rating of 250 mA.
I
Determine
the maximum rated current the diode can
shown in Figure P8.39.IS The Zener
region
ISWor breakdown
i
B
its power limitation.
+ handle without
vin 220exceeding
nF vout
extends from a minimum current at the knee of+ the curve,
_
VS = 13
V to about 5S1mA
equal
here
_ (from the graph) and the
8.42 In the simple voltage regulator circuit
shown in
+_
8.47maximum
The Zener
in the
simple
regulator
rateddiode
current
equal
90voltage
mA (from
the
Figure P8.40, R must maintain the Zener diode current
v
Figure P8.53
circuitspecication
shown in Figure
P8.40
is a 1N4740.
The resistance
source
sheet).
Determine
the Zener
and
within its specied limits for all values of the source
1 Vbattery
voltageZener
is obtained
a DC
power supply. It hast =a tDC
voltagefrom
of the
diode.
voltage,
load
current,
and Zener diode voltage. Determine
= 9.6 V
and a ripple component:
the_minimum and maximum values of R which can be
(a)
used.
vS = VS +
Vz = 5V 10%Device
rz = 15
Vr
where: VS = 16 V Vr = 2V IL = 35 mARVBL==
1010

iz min = 3.5mA iz max = 65 mA

IS IB R S = 1

Figure P8.50

+ VS = 13 V
ISW D1

V Vz = 10 V rz = 7 iz max = 91 mA iz min =

VS = 12 V 3V IL = 70 20 mA

10 mA Determine the ripple voltage across the

S1

load.

_
t = t1 Vbattery

= 9.6 V
(b)

8.48

The Zener diode in the simple voltage regulator

Figure
Figure in
P8.52
circuit shown
Figure
P8.40P8.39
is a 1N5231B. The source
voltage is obtained from a DC power supply. It has a DC
and a ripple
8.40component:
The Zener diode in the simple voltage regulator
circuit
vS = Vshown
S + in Figure P8.40 is a 1N5231B. The source
voltage
is obtained from a DC power supply. It has a DC
Vr
where:and
VS a=ripple
20 V component:
Vr = 250 mV R =
vS =
S L+= 5.1V Vz =
220 IL = 65
mAVV
Vr
5.1V rwhere:
z = 17 V

Prated
0.5W
S=
20 =
VV
r = 250 mV R = 220 IL = 65

8.51 Given the input voltage waveform and the

circuit8.43
shown in In
Figure
P8.51,voltage
sketch regulator
the outputcircuit
voltage.
the simple
shown in
Figure
P8.40,
R
must
maintain
the
Zener
diode
current
Section 4: Zener Diodes
vin
its specied
limits for all values of the source
and within
Voltage
Regulation
voltage, load current, and Zener diode voltage. If:
8.36 The100
diode
Figure
P8.36
VzV= shown
12 V in10%
rz =
9 has a piecewise
linear characteristic that passes through the points (10 V,
z min = 3.25 mA iz max = 80 mA
5 A), (0, i0),
(0.5 V, 5 mA), and (1 V, 50 mA).
Determine the V
piecewise
S = 25 linear
1.5Vmodel, and, using that
model, solve for i and v.
IL = 31.5 21.5mA
t

determine the minimum100

and
maximum values of
R which can be
98used.

vin
8.44 0.6In the
simple voltage regulator circuit shown

in Figure +2P8.40,
the
+ VjZener
= 0.7 Vdiode is a 1N4740A.
v
V
Vz = 10 V 5% rz = 7 _iz min = 10 mA

mA VL = 5.1V Vz = 5.1V rz = 17 PRated = 0.5W iz min

= 10 mA Determine the maximum rated current the

Prated = 1W iz max = 91 mA

Figure
P8.36
V
S = 14
2V R = 19.8

diode can handle without exceeding its power limitation.

izmin = 10 mA Determine the ripple voltage
across the load.
The Zener diode in the simple voltage regulator
circuit shown in Figure P8.40 is a 1N970. The source
iL It has a DC
voltage is obtained from a DC power supply.
and a ripple component:

8.49

vS = VS +
+
Vr
VS
RL
_ IL = 8A Vz = 24 V r_z
where: VS = 30 V Vr = 3V

VL

= 33 VL = 24 V iz max = 15 A iz min = 1.5A R+

= 1 Determine the ripple voltage across the
Figure P8.40

load.

8.41

The 1N963 Zener diode in the simple

voltage regulator circuit shown in Figure P8.40 has
the

+
vout

50 V
Determine the minimum
and maximum load current
_ minimum value of RL in the circuit
8.37 Find
the
for which the diode current remains within its specied
shown in Figure
P8.37 for which the output _voltage remains
values.
at just 5.6 V.
8.45 Figure
In theP8.51
simple voltage regulator circuit shown in
Figure P8.40, the Zener diode is a 1N963. Determine the
1800

maximum
current
for which
8.52minimum
We areand
using
a voltageload
source
to charge
an the diode
current
remains
within
its
specied
values.
automotive battery as shown in the circuit of Figure
P8.52(a). At t =
1, the
protective
Vzt=
12 V
10% rcircuitry
z = 11.5of
the source
causes switch
to
out
18 V S1 to close, and the source voltage Vgoes
min = 2.5mA iz max = 32.6mA
zero. Find theizcurrents,
IS, IB, and ISW , for the following
_
conditions: PR = 400 mW

VS = 25 2V R = 470

Figure
1 P8.37

1
t=t
28.46 tIn=the
t simple voltage regulator circuit shown in
8.38 Figure
Determine
the
minimum
value
P8.40,
diode
is abattery
1N4740A.
3
Whatthe
willZener
happen
to the
afterDetermine
the switch the
minimum
and maximum
source
voltage
andcloses?
the
maximum
value
that
the series
+

resistor may have in a regulator