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Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing

Silicon PIN Photodiode; in SMT and as Reverse Gullwing


BPW 34, BPW 34 S, BPW 34 S (E9087)

BPW 34

BPW 34 S

BPW 34 S (E9087)

Wesentliche Merkmale
Speziell geeignet fr Anwendungen im Bereich
von 400 nm bis 1100 nm
Kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher Packungsdichte
BPW 34 S/(E9087): geeignet fr Vapor-Phase
Lten und IR-Reflow Lten (JEDEC level 4)

Features
Especially suitable for applications from
400 nm to 1100 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing density
BPW 34 S/(E9087): suitable for vapor-phase
and IR-reflow soldering (JEDEC level 4)

Anwendungen
Lichtschranken fr Gleich- und
Wechsellichtbetrieb
IR-Fernsteuerungen
Industrieelektronik
Messen/Steuern/Regeln

Applications
Photointerrupters
IR remote controls
Industrial electronics
For control and drive circuits

Typ
Type

Bestellnummer
Ordering Code

BPW 34

Q62702-P73

BPW 34 S

Q62702-P1602

BPW 34 S (E9087)

Q62702-P1790

2000-01-01

OPTO SEMICONDUCTORS

BPW 34, BPW 34 S, BPW 34 S (E9087)


Grenzwerte
Maximum Ratings
Bezeichnung
Parameter

Symbol
Symbol

Wert
Value

Einheit
Unit

Betriebs- und Lagertemperatur


Operating and storage temperature range

Top; Tstg

40 + 85

Sperrspannung
Reverse voltage

VR

32

Verlustleistung, TA = 25 C
Total power dissipation

Ptot

150

mW

Kennwerte (TA = 25 C, Normlicht A, T = 2856 K)


Characteristics (TA = 25 C, standard light A, T = 2856 K)
Bezeichnung
Parameter

Symbol
Symbol

Wert
Value

Einheit
Unit

Fotoempfindlichkeit, VR = 5 V
Spectral sensitivity

80 ( 50)

nA/Ix

Wellenlnge der max. Fotoempfindlichkeit


Wavelength of max. sensitivity

S max

850

nm

Spektraler Bereich der Fotoempfindlichkeit


S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax

400 1100

nm

Bestrahlungsempfindliche Flche
Radiant sensitive area

7.00

mm2

Abmessung der bestrahlungsempfindlichen


Flche
Dimensions of radiant sensitive area

LB

2.65 2.65

mm mm

Halbwinkel
Half angle

60

Grad
deg.

Dunkelstrom, VR = 10 V
Dark current

IR

2 ( 30)

nA

Spektrale Fotoempfindlichkeit, = 850 nm


Spectral sensitivity

0.62

A/W

Quantenausbeute, = 850 nm
Quantum yield

0.90

Electrons
Photon

Leerlaufspannung, Ev = 1000 Ix
Open-circuit voltage

VO

365 ( 300)

mV

2000-01-01

LW

OPTO SEMICONDUCTORS

BPW 34, BPW 34 S, BPW 34 S (E9087)


Kennwerte (TA = 25 C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 C, standard light A, T = 2856 K) (contd)
Bezeichnung
Parameter

Symbol
Symbol

Wert
Value

Einheit
Unit

Kurzschlustrom, Ev = 1000 Ix
Short-circuit current

ISC

80

Anstiegs- und Abfallzeit des Fotostromes


Rise and fall time of the photocurrent
RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A

tr, tf

20

ns

Durchlaspannung, IF = 100 mA, E = 0


Forward voltage

VF

1.3

Kapazitt, VR = 0 V, f = 1 MHz, E = 0
Capacitance

C0

72

pF

Temperaturkoeffizient von VO
Temperature coefficient of VO

TCV

2.6

mV/K

Temperaturkoeffizient von ISC


Temperature coefficient of ISC

TCI

0.18

%/K

Rauschquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, = 850 nm

NEP

4.1 10 14

Nachweisgrenze, VR = 10 V, = 850 nm
Detection limit

D*

6.6 1012

2000-01-01

W
-----------Hz
cm Hz
-------------------------W

OPTO SEMICONDUCTORS

BPW 34, BPW 34 S, BPW 34 S (E9087)


Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)

Relative Spectral Sensitivity


Srel = f ()
OHF00078

100

S rel %
80

OHF01066

10 3
A

10 4
mV

VO

10 2

10 3

VO

OHF00958

160
mW
Ptot
140
120
100

60
10 1

Total Power Dissipation


Ptot = f (TA)

10 2

40

80
60

10 0

10 1

-1

40

20
20
10

0
400 500 600 700 800 900 nm 1100

10 0

Dark Current
IR = f (VR), E = 0

10
10 3 lx 10 4
EV

10 2

Capacitance
OHF00080

OHF00081

100

pA

20

40

60

80 C 100
TA

Dark Current
IR = f (TA), VR = 10 V, E = 0

C = f (VR), f = 1 MHz, E = 0

4000

10 1

OHF00082

10 3

R nA

pF
80

10 2

3000

70
60
2000

10 1

50
40
30

10 0

1000

20
10
0

10

15

V
VR

0 -2
10

20

10 -1

10 0

10 1

V 10 2

VR

10 -1

20

40

60

80 C 100
TA

Directional Characteristics

Srel = f ()
40

30

20

10

OHF01402

1.0

50
0.8
60

0.6

70

0.4

80

0.2
0

90

100

1.0

2000-01-01

0.8

0.6

0.4

20

40

60

80

100

120

OPTO SEMICONDUCTORS

BPW 34, BPW 34 S, BPW 34 S (E9087)


Mazeichnung
Package Outlines
BPW 34

5.4
4.9
4.5
4.3

0.8
0.6

0.6
0.4
2.2
1.9

Chip position

3.5
3.0

1.2
0.7

0.6
0.4

Cathode marking
4.0
3.7

0.6
0.4
0.8
0.6

0.6
0.4

0.35
0.2

0.5
0.3

0 ... 5

1.8
1.4

5.08 mm
spacing
Photosensitive area
2.65 mm x 2.65 mm

Approx. weight 0.1 g

GEO06643

BPW 34 S

1.1
0.9

6.7
6.2

0...5

0.2
0.1

0...0.1

0.3

1.2
1.1

Chip position

4.0
3.7

1.7
1.5

0.9
0.7

4.5
4.3
1.8 0.2

Photosensitive area
2.65 mm x 2.65 mm

Cathode lead
GEO06863

Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.
2000-01-01

OPTO SEMICONDUCTORS

BPW 34, BPW 34 S, BPW 34 S (E9087)

BPW 34 S (E9087)

1.1
0.9

6.7
6.2

0...5

0.2
0.1

0...0.1

0.3

1.2
1.1

Chip position

4.0
3.7

1.7
1.5

0.9
0.7

4.5
4.3
1.8 0.2

Photosensitive area
2.65 mm x 2.65 mm

Cathode lead
GEO06916

Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.

2000-01-01

OPTO SEMICONDUCTORS