EC6202-ELECTRONIC DEVICES AND CIRCUITS

YEAR/SEM: II/III
TWO MARKS & 16 MARKS FOR 5 UNITS
UNIT 1
TWO MARKS
1. Define diffusion current.
A movement of charge carriers due to the concentration gradient in a semiconductor is
called process of diffusion. When charge carriers move, the current is constituted in a bar.
This current due to diffusion is called diffusion current.
2. What is meant by zener break down?
When a PN junction is heavily doped, the depletion region is very narrow. So under
reverse bias condition, the electric field across the depletion region is intense. Such an
intense field is enough to pull the electrons out of the valence band of the stable atoms.
Such a creation of free electrons is called zener effect. These minority carriers constitute
very large current and the mechanism is called zener break down.
3. List the diode parameters
? Bulk resistance
? Static resistance
? Dynamic resistance
? Reverse resistance
? Knee voltage
? Break down voltage
? Reverse current or leakage current
4. Compare the silicon and germanium diodes with respect to cut in voltage and reverse
saturation current.
The barrier potential for germanium diode is 0.3 V. so the cut-in-voltage of germanium
diode is greater then 0.3 V and the barrier potential of silicon diode is 0.7 V. So the cutin-voltage of silicon diode is greater than 0.7 V.
5. A silicon diode has a saturation current of 7.5A at room temperature 300K. calculate
the saturation current at 460 K.
Given: I01 = 7.5A = 7.5 * 10-6
T1 = 300 K
T2 = 400 K
?T = T2 T2 = 460 300
?T = 160 K

I02 = 2(?T/10) * I01 = 2(160/10) * 7.5 * 10-6

I02 = 0.49152 A
6. Differentiate between drift and diffusion currents.
Drift current Diffusion current
It is developed due to potential gradient It is developed due to charge concentration
gradient
This phenomenon is found both in metals and semiconductors This is found only in
semiconductors
7. Differentiate between avalanche and zener break down.
Zener break down Avalanche breakdown
Breakdown occurs due to heavily doped junction and applied strong electric field
Breakdown occurs due to avalanche multiplication between thermally generated ions
Doping level is high Doping level is low
Breakdown occurs at lower voltage compared to avalanche breakdown Break down
occurs at higher voltage
8. List the PN diode switching times
? Recovery time
? Forward Recovery time
? Reverse Recovery time
? Storage and transition time
9. Define the cut-in-voltage and peak inverse voltage of pn junction diode.
When diode is farward biased, some voltage is necessary to overcome the barrier
potential ,to make diode conduct. This is called cut-in-voltage.
In reverse bias opposite polarity appears across diode. The maximum diode voltage
which diode can withstand without break down is called peak inverse voltage.
10. Define barrier potential at the junction.
Due to immobile positive charges on n-side and negative charges on p-side, there exists
an electric field across the junction. This creates potential difference across the junction
which is called barrier potential, junction potential, built-in potential or cut-in voltage o
PN junction.
11. Give the diode current equation.
I=Io[eV/?VT 1]
I = diode current
Io = reverse saturation current in amperes
V = applied voltage
? = 1 for germanium diode, 2 for silicon diode

VT = voltage equivalent of temperature

12. What is meant by depletion region?
In PN junction, the diffusion of holes and electrons start initially. Near the junction, holes
recombine in N-region to form immobile positive ions. Similarly electrons recombine in
P-region to form immobile negative ions. With sufficient accumulation of such immobile
ions on both sides, the diffusion stops. So near the junction, there exists a region in which
immobile positive and negative charge reside while mobile charge carriers in this region
get completely depleted. This region is called depletion region.
13. Define the transition capacitance of the diode.
A capacitance existing at the PN junction when the diode is reverse biased where the two
regions act as the plates while the depletion region acts as dielectric is called a transition
capacitance of a diode.
14. Why a series resistor is necessary when a diode is reverse biased?
A series resistor is necessary when a diode is reverse biased for limiting the forward
current which increases exponentially with voltage.
15. List any four applications of light emitting diode.
All kinds of visual displays
In the optical devices such as optocouplers
As on-off indicator in various types of electronic circuits.
Remote control. burglar alarm
UNIT I(16 marks)
1.
Explain the working of a PN junction forward bias and in reverse bias
2.
Explain the operation of zener diode and define zener breakdown. Draw its VI
characteristics.
3. With a neat sketch, explain the operation of PN junction diode
4.
Define regulator. Explain the operation of any one type of regulator.
5. With a neat sketch, explain the operation of CLC and LC filter

UNIT II - BJT AND ITS APPLICATIONS

(TWO MARKS)
1. Will a transistor result if two diodes are connected back to back?
A transistor has two p-n junctions. One junction is between the emitter and the base and
is called emitter base junction and the other junction is between the base and the collector
and is called collector base junction. Thus transistor is like two pn junction diodes
connected back to back.
2. State early effect. What are the consequences of it?
In the common Base characteristics of BJT when reverse bias voltage VcB increases, the
width of the depletion region also increases. This reduces the electrical base width. This
effect is called "Early Effect" or "Base width modulation". The Early effect has two
consequences.
There is less chance of recombination within the base region.
The charge gradient is increased within the base and consequently the current of the
minority carriers injected across the junction increases.
3. What is thermal runaway?
In a power transistor the increase in collector current increases the power dissipated at the
collector junction. This, in turn further increases the temperature of the junction and
hence increases the collector current. The process is cumulative and it is referred to as
self heating. The excess heat produced at the collector base junction may even burn and
destroy the transistor. The situation is called "Thermal runaway" of the transistor.
4. What are hybrid parameters?
The parameters h11, h12, h21, h22 are the hybrid parameters. These four parameters are
not same. They have different units. In other words, they are mixture of different units
and hence referred to as hybrid parameters. They are commonly known as h-parameters.
5. Define the delay time and rise time in the switching characteristics of transistor.
In the transistor switching characteristics the deley time is the time that elapses the
application of the input pulse and current to rise to 10 percent of its maximum value.The
time required for Ic to reach 90% of its maximum level from 10% level is called the rise
time.
6. Define the hie and hfe for a common emitter transistor configuration.
hie = ?VBE
?IB VCE constant

hfe = ?Ic
?IB VCE constant
hie is input resistance in common emitter configuration
hfe is short circuit current gain in common base configuration
7. When a transistor is used as a switch, in which region of output characteristics it is
operated?
8. When a transistor is used as a switch it is operated alternately in the cut off region and
saturation region of the output characteristics
9. Write the relation between Ic, , IB and IcBo in a BJT.
i. In the active region:
i. IC = IB + (1+ )ICO
ii. In the cut-off region:
i. IC = (1+ )ICO
ICBO is the collector current when the emitter current is zero. ICBO is greater than ICO
10. Define a and of a transistor.
a: It is defined as the ratio of the collector current resulting from carrier injection to the
total emitter current
a = IC
IE
: it is defined as the ratio of collector current to base current.
= IC
IB
11. In a bipolar transistor which region is wider and which region is thinner? Why?
The middle region of bipolar junction transistor is called as the base of the transistor.
Input signal of small amplitude is applied to the base. This region is thin and lightly
doped.The magnified output signal is obtained at the collector. This region is thick and
heavily doped.
12. State the advantages of optocoupler.
a. It is compact and has less weight
b. Much faster than isolation transformers and relays
c. Noise transients, contact bounce etc, are completely eliminated
d. Has wide band signal transmission capability
e. Easy to interface with logic devices.
f. Response time is small
13. What are the tools used for small signal analysis of BJT?
Vi = hi Ii + hr Vo
Io = hf Ii + ho Vo

hi : input resistance
Ii : input current
hr : reverse voltage transfer ratio
ho : output admittance
Vi : input voltage
Vo : output voltage
The above parameters are required for drawing the equivalent circuit which is necessary
for the small signal analysis of BJT.
14. Give the current gain expression for a common emitter transistor configuration.
Ai= IC = -hfe
IB 1+hoeRL
15. What are power transistors?
Power transistors are one which is used for power amplification. It means that the
operating voltage and current is large. In the off-state they have to block large voltage and
in the on-state they have to carry large current.
16. Which of the BJT configuration is suitable for impedance matching application?
Common emitter configuration is used in impedance matching application because the
ratio of output resistance to input resistance is small and may range from 10 ? to 100 ?.
This makes the configuration an ideal for coupling between various transistor stages
17. For a npn transistor IE = 12ma and = 140. Determine the value of IB and Ic.
Ans: IE = (1+ ) IB
IB = IE / (1+ )
= 12mA / (1+140)
= 85.1 mA
Ic = IB = 140 * 85.1 mA = 11.914 mA

18. Determine and IE for a transistor if IB = 50A and Ic = 3.6 mA.

Ans: I = Ic/IB = 3.6 mA/50 A = 72
IE = IB + Ic = 50 A + 3.6 mA = 3.65 mA

UNIT II(16MARKS)
1. Draw and explain input and output characteristics of common emitter configuration
of a transistor
2. Explain in detail on voltage gain and current gain expressions for CB configuration
using transistor hybrid model
3. Draw the input and output characteristics of N-P-N transistor in common base
configuration and explain it. How the different hybrid parameters are found out from the
above characteristics
4. Explain how the hybrid parameters hfe , hoe, hie, hre can be determined from the CE
characteristics of a transistor .

UNIT III - FET AND ITS APPLICATION

(TWO MARKS)
1. Why is FET called a unipolar device?
In FET current is carried by only one type of charge particles, either electrons or holes.
Hence FET is called unipolar device.
2. How can a FET be used as a voltage controlled resistor?
In FET , the voltage applied between gate and source controls the drain current ID.
Therefore, FET is a voltage controlled device.
3. What are the advantages of FETs?
In FET input resistance is high compared to BJT
Construction is smaller than BJT
Less sensitive to changes in applied voltage
Thermal stability is more
Thermal runaway does not exist in JFET
Thermal noise is much lower
4. Draw the low frequency equivalent circuit of JFET
5. Define amplification factor in JFET.
It is defined as the ratio of change in drain-source voltage VDS to the change in gatesource voltage VGS at constant drain current ID. It is also called mutual conductance

= ?VDS
?VGS ID constant
6. Give the small signal model of a FET.
7. Mention the three regions that are present in the drain source characteristics of JFET
Saturation region
Break down region
Ohmic region
8. What is pinch-off voltage in FET?
In the VI characteristics of JFET, at some value of VDS, drain current ID cannot be
increased further, due to reduction in channel width. Any further increase in VDS does
not increase the drain current ID. ID approaches the constant saturation value. The
voltage VDS at which the current ID reaches to its constant saturation level is called "
Pinch-off voltage", Vp
9. What are the parameters that control the Pinch off voltage?

Electron charge, donor or acceptor concentration, permittivity of channel material and

half width of channel bar.
10. List the characteristics of JFET.
Drain characteristics
Transfer characteristics
11. Differentiate between BJT and JFET
Sl.no BJT FET
1 Current controlled device Voltage controlled device
2 Bipolar device Unipolar device
3 Less input resistance Input resistance greater than BJT
4 Less thermal stability High thermal stability
5 More thermal noise Less thermal noise
12. Give the drain current equation of JFET.
ID = IDSS (1 VGS )2
Vp
ID = drain current
IDSS = saturation drain current
VGS = gate source voltage
VP = pinch-off voltage
13. Why MOSFET is called IGFET?
MOSFET is constructed with gete terminal insulated from the channel. So it is also
called as insulated gate FET or IGFET.
14. Comparison between JFET and MOSFET
JFET MOSFET
Gate is not insulated from channel Gate is insulated from channel by a thin layer of SiO2
There are two types N-channel and P-channel Four types - P-channel enhancement, Pchannel depletion, N-channel enhancement, N-channel depletion
Cannot be operated in depletion and enhancement modes Can be operated in depletion
and enhancement modes
There is a continuous channel There is a continuous channel only in depletion type, but
not in enhancement type
15. List the JFET parameters.
Transconductance (gm)
Input resistance and capacitance
Drain to source resistance (rd)
Amplification factor ()

UNIT III (16MARKS)

1. Explain the principle of operation of N-channel JFET
2. Give a detailed description of construction and operation of JFET
3. Explain the working principle and characteristics of Depletion N-MOSFET under
depletion mode and enhancement mode in detail
4. Derive the expression for Av, Ri, and Ro for CS JFET amplifier

UNIT IV & V- AMPLIFIERS AND OSCILLATORS(2MARKS)

1. Define amplifier
A device which accepts an input signal and produces an output signal proportional to the
input is called an amplifier.
2. What is differential amplifier
An amplifier which amp[lifies the difference between two input signal is called
differential amplifier
3. Define CMRR.
The ability of differential amplifier to reject a common mode signal is expressed by a
ratio called common mode rejection ratio denoted as CMRR.
CMRR = ? = Ad
Ac
4. What is the significance of CMRR in differential amplifier?
The significance of CMRR is that larger the value of CMRR, better the differential
amplifier
5. What is voltage or node sampling?
In amplifier if the output voltage is sampled by connecting the feedback network in
shunt across the output, such a connection is referred to as voltage or node sampling
6. What is current or loop sampling?
In amplifier if the output current is sampled by connecting the feedback network in
series with the output, such a connection is referred to as current or loop sampling
7. What is positive feedback?
If the input signal and the output signal are in phase, the feedback is called positive
feedback
8. What is negative feedback?
If the input signal and output signal are not in phase, the feedback is called negative feed
back
9. List the advantages of negative feedback
Less noise
Less frequency distortion
Less amplitude distortion
Less phase distortion
Less harmonic distortion
Band width is increased

10. Define desensitivity.

The fractional change in amplification with feedback divided by the fractional change
without feedback is called the sensitivity of the transfer gain (1/ (1/ (1 + A) ). The
reciprocal of the sensitivity is called the Desensitivity
11. What is the Barkhausen criterion for feedback oscillators?
-A = 1
A = 1
The above to conditions are required to work a circuit as an oscillator. This is called
Barkhausen criterion for oscillation.
12. State Barkhausen conditions for sinusoidal oscillators.
The total phase shift around a loop, as the signal proceeds from a input through
amplifier, feedback network back to input again, copeting a loop, is precisely 0 or 360,
or of course an integral multiple of 2? radians.
The magnitude of the product of the open loop gain of the amplifier (A)
and the feedback factor is unity i.e. A = 1
13. Mention the expression for frequency of oscillations for colpitts oscillator and Hartley
oscillator.
Hartley oscillator:
1
f=
2? C (L1 + L2)
Colpitts oscillator:
1
f=
2? L Ceq
Ceq = C1 C2
C1 + C2
14. What is the advantage of clap oscillator over a colpitts oscillator.
The frequency is stable and accurate.
Good frequency stability
Stray capacitances have no effect on c3 which decides the frequency
Keeping C3 variable, frequency can be varied in the desired range

15. Mention the features of crystal oscillator

It is a tuned-circuit oscillator
It uses piezoelectric crystal as its resonant tank circuit
It is preferred when greater frequency stability is required
Used in watches communication transmitters and receivers etc.
16. What are the advantages of crystal oscillator?
Good frequency stability
Good temperature stability
Quartz crystal is used which is inexpensive and easily available in nature.
17. Draw the circuit diagram of one shot multivibrator.
18. Draw the typical wave form at base and collector coupled astable multivibrator
19. Draw the circuit diagram of a collector coupled astable multivibrator using
complementry transistors.
20. Draw the circuit diagram of a emitter coupled astable multivibrator .
21. State the applications of Schmitt trigger circuit.
Used as an amplitude comparator
Used as a squaring circuit
Used as a flip-flop
22. Define intrinsic stand off ratio of UJT and draw its equivalent circuit
The resistance ratio rB1/rBB is an important characteristics of UJT. It is known as the
"intrinsic stand-off ratio" and is designated by "?"
Hence ? = rB1 = rB1
rB2 rB1 + rB2
23. What is a clamper?
The circuit with which the waveform can be shifted, such that, a particular part of it (say
positive or negative peak) is maintained at a specified level, is called a clamping circuit
or simply a clamper
24. What is a clipper?
The circuit with which waveform is shaped by removing a certain portion of the input
signal voltage above or below a preset level is called clipper. They are also called limiters
when they are used to limit the amplitude of the input signal.
25. List the types of clippers
Based on limiting action
? positive clipper
? negative clipper
? biased clipper
? combination clipper
Based on limiting action

? Diode clipper
? Transistor clipper
26. What is the function of clamping circuits?
The function of clamping circuit is to introduce a d.c level into an a.c level. The
clamping circuits are also sometimes known as d.c restorers.
27. What is AMV? Why is it called as square wave generator?
An AMV is essentially a two stage RC coupled amplifier with output of one stage
supplied back to the input of another stage. An AMV generates square wave of known
frequency. So it is called a "Square wave generator.

UNIT IV (16MARKS)
1. Draw the circuit diagram of a phase shift oscillator using BJT. Derive the expression
for its frequency of oscillation. Determine the minimum hfe for the transistor
2. With suitable diagram explain the operation of Colpitts oscillator
3. Explain the principle of operation of crystal oscillator and give its application
4. Briefly discuss the effect of negative feedback on band width and stability of an
amplifier
UNIT V (16MARKS)
1. Explain the operation of Schmitt trigger using two transistors for a sinusoidal input
2. Explain the operation of UJT and draw the VI characteristics.
3. Explain series and shunt clipper with suitable diagram
4. Draw the circuit diagram of collector coupled astable multivibrator and explain its
operation with relevant operation. Derive the expression for time period

B.E./B.Tech. DEGREE EXAMINATION, APRIL/MAY 2010

Third Semester
Electrical and Electronics Engineering
EE2203 ELECTRONIC DEVICES AND CIRCUITS
(Regulation 2008)
Time: Three hours Maximum: 100 Marks
Answer ALL Questions
PART A (10 2 = 20 Marks)
1. What is meant by diffusion current in a semi conductor?
2. A silicon diode has a saturation current of 7.5 A at room temperature 300K.
Calculate the saturation current at 400K.
3. Draw the input and output characteristics of a transistor in CE configuration
and mark the cutoff, saturation and active regions.
4. State the advantages of optocoupler. (Write any four).
5. Compare JFET with BJT.
6. Define amplification factor in JFET.
7. Define CMRR and write its significance in differential amplifiers.
8. List the advantages of negative feedback amplifiers.
9. Sketch the idealized characteristics for the filter types.
(a) Low pass
(b) High pass
(c) Band pass
(d) Band reject filters.
10. Define intrinsic stand off ratio of UJT and draw its equivalent circuit.
PART B (5 16 = 80 Marks)
11. (a) With a neat diagram explain the working of a PN junction diode in
forward bias and reverse bias and show the effect of temperature on its
V-I characteristics. (Marks 16)
Or
(b) (i) Explain V-I characteristics of Zener diode. (Marks 8)
(ii) Draw the circuit diagram and explain the working of full wave
bridge rectifier and derive the expression for average output
current and rectification efficiency. (Marks 8)
12. (a) (i) Draw the h-parameter equivalent circuit of a transistor in CE

configuration. (Marks 8)
(ii) Describe the methods of determination of h-parameters from its
static Input and output characteristics. (Marks 8)
Or
(b) (i) Explain the important characteristics of optocoupler. (Marks 6)
(ii) Explain the switching characteristics of transistor with neat sketch.
(Marks 10)
13. (a) (i) Explain how the transconductance of a JFET varies with drain
current and gate voltage characteristics and transfer
characteristics. (Marks 12)
(ii) A JFET has the following parameters IDDS = 32 mA,
VGS(off) = -8 Volts, VGS = -4.5 Volts. Find the values of drain
current. (Marks 4)
Or
(b) (i) Explain the working of n-channel enhancement type MOSFET.
Sketch its typical characteristics. (Marks 10)
(ii) Explain the application of FET as a voltage variable resistor. (Marks 6)
14. (a) (i) Draw the block diagram of a voltage series feedback amplifier and
derive the equation for input impedance, output impedance and the
voltage gain. (Marks 10)
(ii) Calculate the voltage gain, input and output resistances of a voltage
series feedback amplifier having AV = 300, Ri = 1.5 k, Ro = 50 k
and = 1/15. (Marks 6)
Or
(b) (i) Differentiate oscillator with amplifier. (Marks 4)
(ii) Draw the circuit of a Hartley oscillator and derive the condition for
the frequency of oscillation. (Marks 12)
15. (a) (i) Describe the operation of UJT and its emitter characteristics. (Marks 8)
(ii) Describe the working of a Schmitt trigger circuit with the help of
necessary waveforms. (Marks 8)
Or
(b) (i) Sketch the response of RC high pass filter for the following inputs
and explain.
(1) Ramp
(2) Pulse. (Marks 8)
(ii) Explain the operation of a bistable multi-vibrator circuit with neat
sketch. (Marks 8)

ANNA UNIVERSITY PREVIOUS YEAR QUESTION PAPER EE2203 ELECTRONIC

DEVICES AND CIRCUITS NOV/DEC 2010, IMPORTANT QUESTIONS, 2 MARKS
AND 16 MARKS QUESTIONS FOR EEE DEPARTMENT
B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2010
Third Semester
Electrical and Electronics Engineering
EE 2203 ELECTRONIC DEVICES AND CIRCUITS
(Regulation 2008)
Time : Three hours Maximum : 100 Marks
Answer ALL questions
PART A (10 2 = 20 Marks)
1. Define Knee voltage of a diode.
2. What is peak inverse voltage?
3. Name the operating modes of a transistor.
4. What are hybrid parameters?
5. Draw the high frequency model of JFET.
6. Write the AC input impedance of a Darlington Transistor.
7. Mention the operating modes of MOSFET.
8. Mention any two high frequency LC oscillators.
9. Write the frequency equation of an Astable multivibrator.
10. What is Schmitt Trigger?
PART B (5 16 = 80 Marks)
11. (a) (i) Explain the operation of FWR with centre tap transformer. Also
derive the following for this transformer. (6)
(ii) dc output voltage (4)
(iii) dc output current (2)
(iv) RMS output voltage. (4)
Or
(b) Explain the following regulator circuits :
(i) Transistorized shunt regulator. (8)
(ii) Zener diode shunt regulator. (8)
12. (a) Describe the static input and output characteristics of a CB transistor
with neat circuit diagram. (16)
Or
(b) Derive the expression for current gain, input impedance and voltage gain
of a CE Transistor Amplifier. (16)
13. (a) Explain the construction of N channel JFET. Also explain the drain and
transfer characteristics of the same. (16)
Or
(b) (i) Describe the operation of common drain FET amplifier and derive
the equation for voltage gain. (12)
(ii) In the common drain FET amplifier of above Let

. 35 ; 50 ; 4 K r K R d S = = = Evaluate the voltage gain V A . (4)

14. (a) Derive the equation for differential mode gain and common mode gain of
a differential amplifier. (8 + 8 =16)
Or
(b) Draw and explain the operation of a Hartley oscillator. Derive the
equation for fe r h f and . (16)
15. (a) Explain the working of UJT as a relaxation oscillator with necessary
wave forms and equations. (16)
Or
(b) (i) Draw the circuit of a monostable multivibrator and explain. (14)
(ii) What are the applications of monostable multivibrator? (2)

Important Questions in EDC Electronic Devices and Circuits 131303 subject for
NOV/DEC 2011 AUT ANNA UNIVERSITY OF TECHNOLOGY EXAMINATIONS
FOR SECOND YEAR THIRD SEMESTER EEE Students
131303 - Electronic Devices and Circuits