CERTIFICATE

This is to certify that Sarthak Sharma of class XIII-C has successfully carried out his physics project in
fulfillment of his course requirement at Delhi Public School , Mathura road , New Delhi. He has taken
keen interest and has shown sincerity in designing and testing of the project .

Mr. Manoj Kumar

ACKNOWLEDGEMENT
This give me great pleasure in expressing my sincere thanks and deep sense of gratitude to my
respected sir
Mr. Manoj Kumar
For his valuable guidance , interest and constant encouragement for the fulfillment of this project .
I laso extend my gratitude to lab assistant Mr.
assist me as much as possible .

for putting tremendous efforts from his side to

AIM

To study the effect of heat on the resistance of semiconductor diodes.

APPARATUS
Semi conductor diode
Multimeter
Ice
Beaker
Mustard Oil
Thermometer
Spirit Lamp
Tripod Stand
Wire Gauze
Iron Stand
Solder

INTRODUCTION
Semi Conductors
These are the substances which are insulators at zero Kelvin but they become conductors whem
some energy is given to them . Their conductivity lies between conductor and insulators . Germanium ,
Silicon behaves as semiconductors.
Conductors
The substances which conduct electricity even at zero Kelvin . there is no forbidden gap. Fermi level
acquires little energy and behaves as free electron.
Insulators
These seubstances do not conduct electricity even at room temperature . They have completely filled
valence bond , empty conduction band and large energy gap impossible to be pressed by an electron .

ENERGY BANDS
Electron is isolated atom and have definite discrete energy in different sub-shells which gets modified
due to their atomic interactions . the spreading of energy corresponding to 3s and 3p levels reduces
energy gap existing between them . This collection of closely packed levels is called ENERGY BAND. This
band of filled energy level and unfilled energy level are separated by energy gap called forbidden energy
gap. The lower filled band is not conduction band but valence band . The upper filled band is called
conduction band .
COURSE OF CONDUCTION
Motion of electrons in conduction bands and holes in valence band is the cause for electrical conduction
.
HOLES
Hole is an active particle in the valence band similar to electron in the conduction band . th is considered
as positive charge having charge equal to that of electron .
FORMATION OF HOLE
The atom in the structure are strongly held by covalent bond on receiving additional energy one by one
the electrons contributing to a covalent bond breaks and is free to move in the whole lattice . While
coming out , it leaves a space having a positive charge and is called a hole.

THEORY
Intrinsic Semiconductor
A pure semi conductor free from any impurity condition due to electron excitation from valence
band.
Doping
The delicate addition of desirable impurity in a pure semi conductor to modify its properties in a
controlled manner . The dopant should take position of semiconductor in a lattice should not distord
lattice , its size should be almost same. It is added in the melt of semiconductor by heating crystalline
semiconductor in atmosphere of dopant or by bombarding semiconductor with the dopant .
TYPES OF SEMICONDUCTORS
N-TYPE
A pure silicon semiconductor doped with phosphorus forming four covalent bonds while the fifth
electron is loosely bond to parent impurity atom . Here electrons are majority carriers .
P-TYPE
A pure silicon semiconductor doped with aluminium taking an electron from Si-Si bond to complete
four Al-Si bonds. Holes are the majority carriers .

P-N JUNCTION
Formation of P-type semiconductor on a N-type semiconductor from wafers(thin slices) of these by
heating them to a temperature of 580C .

DEPLETION REGION
The region in which no free charge carriers are available due to migration of charge carriers across the
junction . After further diffusion of carriers in opposite region is stopped, is depletion region.
In P-N junction electron diffuse from N to P region. The accumulation of electrical charges of opposite
polarities gives rise to an electric field. Width of depletion region depends on semiconductor and its
doping concentration and the type of biasing.

PROCEDURE
Take oil and diode in a beaker and cool down the diode to minimum temperature by keeping the
beaker in ice cold water.
Set the multimeter at highest range of resistance and connect negative drobe of multimeter to N side
of diode.
Connect positive drobe of multimeter to P side of diode.
Take out the beaker and allow its temperature to rise up.
Note the temperature and corresponding resistance in the multimeter.
After the room temperature has reached, heat it slowly, take the reading of multimeter for every 5 rise
in temperature.
Take observations, one for rising and one for falling.

OBSERVATIONS
OBSERVATION TABLE
S No.

TEMPERATURE (in degree celcius)

RESISTANCE(k)(in ohms)

S No.

TEMPERATURE (in degree celcius)

RESISTANCE(k)(in ohms)

PRECAUTIONS

Never use water heating diodes.

Temperature of oil both should not exceed 75C.
Thermometer should not touch the bottom of the beaker. It should remain suspended to the oil.
Do not try lower down the temperature of the diode forcefully.

RESULT

The investigatory experiment showed that resistance of a semiconductor decreases with the increase in
temperature and it increases with the decrease in temperature thus temperature coefficient for
semiconductors is negative .