June 2003

AO3413
P-Channel Enhancement Mode Field Effect Transistor
General Description

Features

The AO3413 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.

VDS (V) = -20V

ID = -3 A
RDS(ON) < 97m (VGS = -4.5V)
RDS(ON) < 130m (VGS = -2.5V)
RDS(ON) < 190m (VGS = -1.8V)

TO-236
(SOT-23)
Top View
G
D

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25C

Continuous Drain
Current A
Pulsed Drain Current

ID
IDM

TA=70C
B

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

-15
1.4

0.9

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

-2.4

PD

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C

Units
V

-3

TA=25C
Power Dissipation A

Maximum
-20

RJA
RJL

Typ
70
100
63

Max
90
125
80

Units
C/W
C/W
C/W

AO3413

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

IGSS
VGS(th)
ID(ON)

Gate-Body leakage current

Gate Threshold Voltage

RDS(ON)

gFS
VSD
IS

On state drain current

Static Drain-Source On-Resistance

Conditions

Min

ID=-250A, VGS=0V
VDS=-16V, VGS=0V

-20

Rg

SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
tr

VDS=0V, VGS=8V
VDS=VGS ID=-250A
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3A

-0.3
-15
TJ=125C

VGS=-2.5V, ID=-2.6A
VGS=-1.8V, ID=-1A
VDS=-5V, ID=-3A

tD(off)
tf
trr
Qrr

-0.55

-5
100
-1

81
111
108

97
135
130

146
7

190

-0.78

-1
-2

V
A

nA
V
A
m

VGS=0V, VDS=-10V, f=1MHz

540
72

pF
pF

VGS=0V, VDS=0V, f=1MHz

49
12

pF

VGS=-4.5V, VDS=-10V, ID=-3A

6.1
0.6

nC
nC

1.6
10

nC
ns

12
44
22

ns
ns
ns

21
7.5

ns
nC

Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Units
V

TJ=55C

Forward Transconductance
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current

Output Capacitance
Reverse Transfer Capacitance
Gate resistance

Max

-1

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Crss

Typ

VGS=-4.5V, VDS=-10V, RL=3.3,

RGEN=3

IF=-3A, dI/dt=100A/s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The
SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

6

15
-4.5V
-3.0V

VDS=-5V

-2.5V

-8V
4

10
-ID(A)

-ID (A)

-2.0V

125C

VGS=-1.5V
25C
0

0
0

2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics

200

1
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics

Normalized On-Resistance

1.8
VGS=-1.8V

RDS(ON) (m)

0.5

150
VGS=-2.5V
100

VGS=-4.5V

50

VGS=-2.5V
1.6
VGS=-1.8V

1.4

VGS=-4.5V

1.2
1
0.8

25

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01

200

1E+00
ID=-4A

1E-01
-IS (A)

RDS(ON) (m)

150

125C
100

25C

125C

1E-02

25C

1E-03
1E-04
1E-05

50
0

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

1E-06
0.0

0.2

0.4

0.6

0.8

1.0

-VSD (Volts)
Figure 6: Body-Diode Characteristics

1.2

AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

800

5
VDS=-10V
ID=-3A
Capacitance (pF)

-VGS (Volts)

4
3
2
1

Ciss

600

400

Crss

200

Coss

0
0

-Qg (nC)
Figure 7: Gate-Charge Characteristics

10

20

TJ(Max)=150C
TA=25C

10s
Power (W)

15

1ms

RDS(ON)
limited

0.1s

20

TJ(Max)=150C
TA=25C

100s

10.0

15

-VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

-ID (Amps)

10ms

1.0

10

1s
10s
DC

0
0.001

0.1
0.1

10

100

-VDS (Volts)

ZJA Normalized Transient

Thermal Resistance

0.1

100

1000

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/(Ton+Toff)
TJ,PK=TA+PDM.ZJA.RJA
RJA=90C/W

PD

0.1

Ton
Single Pulse
0.01
0.00001

10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10

0.01

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000

SOT-23 Package Data

SYMBOLS

GAUGE PLANE

PACKAGE MARKING DESCRIPTION

SEATING PLANE

A
A1
A2
b
C
D
E
E1
e
e1
L
1

DIMENSIONS IN MILLIMETERS

MIN
1.00
0.00
1.00
0.35
0.10
2.80
2.60
1.40

0.40
1

NOM

1.10
0.40
0.15
2.90
2.80
1.60
0.95 BSC
1.90 BSC

MAX
1.25
0.10
1.15
0.50
0.25
3.04
2.95
1.80

0.60
8

NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE

RECOMMENDATION OF LAND PATTERN

SOT-23 PART NO. CODE

PNDLN

PART NO.

CODE

AO3411

AB

NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.

Rev. A

ALPHA & OMEGA

SEMICONDUCTOR, INC.

SOT-23 Carrier Tape

SOT-23 Reel

SOT-23 Tape
Leader / Trailer
& Orientation

SOT-23 Tape and Reel Data