Beruflich Dokumente
Kultur Dokumente
5, MAY 2012
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I. I NTRODUCTION
ALCULATIONS of speculative device IV characteristics from physically meaningful parameters, e.g., injection velocity, source/drain resistance, etc., in ballistic FETs
is typically the domain of sophisticated technology computeraided design simulations [1][6], but computationally efficient
compact models are essential to facilitate fast circuit simulation of large-scale circuits. The widely adopted thresholdvoltage-based compact models (such as BSIM [7] and PTM
[8]) and surface-potential-based compact models (such as PSP
[9]) usually calculate the device characteristics using around
a hundred to several hundreds of parameters related to fabri-
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In order to account for dynamical behavior, the model terminal charges must produce the full matrix of capacitive components and their voltage dependences. The approach developed
in [20] directly determines the intrinsic charges associated with
the source and drain terminals following (3). Lg is the channel
length. Qi (x) is the channel charge areal density along the
channel at position x. Equation (3) is universally true as long
as the device operates under quasi-static conditions (cf. [14,
App. L]), regardless of drift/diffusion or ballistic transport.
Hence, the key step to partition the intrinsic channel charge
to the source (QS ) and drain (QD ) terminal components is to
determine Qi as a function of x
L
g
1 Lxg Qi dx
QS =
0
(3)
L
g x
Q
=
Q
dx.
D
i
Lg
0
(1)
(2)
x
Lg
2
Vds .
(4b)
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Qix0
1+k
x
Lg
Qix0
2
1 + k Lxg
(6)
(7a)
(7b)
Fig. 3. IV characteristics of Intel 45-nm HP devices (The experimental data
date back to year 2006, prior to the publication of [16]) VS model versus
experimental measurement for (a) NMOS and (b) PMOS. These are test devices
replicating devices in RO circuits provided by Intel.
where
k=
2qVds
2 .
m vx0
(7c)
Substituting (7a) or (7b) in (3) and carrying out the integration, (8a) and (8b) are derived for QSQB and QDQB , which
are the channel charges associated with source and drain in the
ballistic transport, respectively. Under QB transport conditions,
on the average, carriers lose part of their kinetic energy due to
scattering. This can be roughly approximated by increasing the
carrier effective mass m . Since Qix0 appears in both the current [see (1)] and the aforementioned intrinsic charge equations,
the internal consistency of IV and QV (and therefore CV )
characteristics is guaranteed, i.e.,
(8a)
QDQB = Lg Qix0 (2k4) 2k+1+4
3k
1
QSQB = Lg Qix0 sinh ( k) k+11
k
k
(8b)
QDQB = Lg Qix0 k+11 .
k
In the nonsaturation region of operation, Vds is generally
small, and the potential profile is wider and flatter than in
saturation conditions. Under such conditions, carrier transport
approaches drift/diffusion conditions dominated by mobility, as
opposed to velocity for operation in saturation. It is important to
note here that, even for purely ballistic conditions, an effective
mobility can be still defined (often termed as ballistic mobility
[24][26]) Therefore, at very low Vds , devices are assumed
to operate under the drift/diffusion mode, regardless of which
mode (NVsat, Vsat, or QB) is used to describe operation at
high Vds . In (9), function Fsat that is used to link the linear to
saturation regions is also used to extend the QB charge model
to the nonsaturation region, so that the model converges to the
NVsat case [see (A4a)] at low Vds , i.e.,
QS = (1 Fsat ) QSNvsat + Fsat QSQB
(9)
QD = (1 Fsat ) QDNvat + Fsat QDQB .
The dynamic VS model with three (selectable) charge distribution models downstream of the virtual source (NVsat, Vsat,
and QB) has been implemented in Verilog-A language with
additional empirical models for channel charges arising from
inner-fringing capacitances and drain-induced barrier lowering
(DIBL). The bias-dependent inner-fringing capacitances are
modeled with empirical functions that take into account the
screening effect from the channel. In the NVsat and Vsat cases,
the function of Qi on x is explicitly included through the IV
models as in (A2a) and (A2b). The Vsat theory and the corresponding IV models in (A3b) assume an upper limit of the
carrier velocity, whereas the VS model allows the acceleration
of the carrier velocity along the channel. Mathematically, the
VS model is capable of describing the drift/diffusion transport,
as long as Qix and vx have the appropriate form versus bias
for at least one point along the channel. Of course, this point is
not necessarily the virtual source. In the extreme case where
the critical field for velocity saturation (Ecrit ) is very small, the
VS transport model and the Vsat transport model converge with
vix0 = vsat . The drift/diffusion charge models [see (A4a) and
(A4b)] as derived in the Appendix A are self-consistent with
the IV model in (A3a) and (A3b). In the VS model, the virtual
source point is assumed to be at x = 0. Under this assumption,
(A1) becomes Qixo = Cox Vgt at x = 0. Equations (A4a) and
(A4b) are then proportionally scaled according to Qixo to
guarantee the self-consistency between the current and charge
models. In the Vsat model throughout this paper, we assume
vsat = vix0 to calculate the critical electric field Ecrit in (A2b)
and (A3b).
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TABLE I
K EY PARAMETERS FOR T RANSPORT AND C HARGE M ODELS
F ITTED TO I NTEL S 45 nm HP D EVICES
Fig. 4. NFET gate charge (a) without and (b) with fringing capacitances
calculated by the Vsat and QB models to be self-consistent with the transport
characteristics shown in Fig. 3. Lower gate charges of 58% and 39% are
calculated by the QB than by the Vsat model at Vgs = Vds = 1 V without
and with fringing capacitances, respectively.
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Fig. 7. RO delays versus fan-out. The insets show the circuit topology and
stage delay data in picoseconds. The delay calculated by the VS model with
layout-extracted interconnect capacitance added for each fanout case agree very
well with the measurement. Compared with Vsat, the QB model predicts less
than 3% lower delay at FO = 1, and the difference decreases as FO increases.
This is because, during a switching event, devices spend little time in the
saturation region where the charge model choice makes significant difference
and also because the contribution of extrinsic capacitances is significant even
in these simple circuits.
TABLE II
K EY PARAMETERS FOR T RANSPORT AND C HARGE M ODELS
F ITTED TO THE E XPERIMENTAL HEMT D EVICES
Fig. 6. Gate capacitance versus |Vgs | at Vds = 0 V. QB and Vsat models are
identical at this value of Vds The capacitances calculated by the VS model with
the fitted Cif and Cof (see Table I) match well with the measured points for
both NMOS and PMOS. All three models converge to the NVsat case when
Vds = 0 V. The measured points correspond to devices replicating those in the
RO circuits.
that the significant channel charge reduction due to QB operation in saturation results in very small delay benefit because
devices during switching pass in addition subthreshold and
linear regions, where differences between charges are minimal,
and also because extrinsic capacitances that participate in the
switching event are quite significant relative to intrinsic ones.
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Fig. 8. (a) IV characteristics of InGaAs HEMT. VS model versus experimental measurement at Lg = 130 nm. (b) Schematic of the device structure.
By developing an analytical channel charge distribution approach, we have implemented the FET VS compact model with
self-consistent transport and charge models covering ballistic
and drift/diffusion transport conditions. With few physical parameters, the model can enable fast circuit simulation with
speculative FET devices using physically based parameters.
The model has been validated by comparing calculations with
experimental results for both digital and RF devices. Ballistic
transport may reduce intrinsic channel charge by about 60%
compared with velocity-saturation drift/diffusion transport in
the 45-nm Si MOSFETs operating in saturation; however, this
results to minimal benefit in the switching delay due to the
dominance of extrinsic charges (capacitances), and therefore,
its effect cannot be reasonably resolved by comparing dynamic
circuit measurements with simulations. However, the QB model
is required to match the measured of Cgs and Cgd for HEMT
devices, where the Vsat model predicts the incorrect scaling
trend for Cgd .
A PPENDIX A
C HARGE PARTITIONING M ODELS FOR
D RIFT /D IFFUSION T RANSPORT
When the GCA is valid, Qi can be calculated as a function
of V as in
Vgt = Vgs Vth
Qi (x) = Cox (Vgt V (x)) .
(A1)
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drift velocity (Vsat) models, respectively. Cox is the gate dielectric capacitance per unit area. Vth is the threshold voltage,
s is the low-field mobility, and vsat is the saturation velocity.
Ecrit is the critical electric field when velocity saturates and is
related to s and vsat by Ecrit = vsat /s . is to account for
the body effect [19], [20], i.e.,
Id = Qi (x) s dV /dx
s dV /dx
Id = Qi (x)
/dx
1 + dV
Ecrit
s Cox
Id =
(Vgt 0. 5Vdsat )Vds
Lg
C
s ox (Vgt 0. 5Vdsat )Vds .
Id =
s Vds
Lg 1 + Lv
sat
(A2a)
(A2b)
(A3a)
(A3b)
A = A 1 + Vds
Ecrit L
(A4b)
2
Vds
B = B 1 +
Ecrit
L(10V
4V
)
gt
ds
QDNvsat = Cox 12 Vgt 13 Vds + AB
(A5a)
1
1
B)
QSNvsat = Cox 12 Vgt 16 Vds + A(1
QDVsat = Cox 2 Vgt 3 Vds + A B
(A5b)
QSVsat = Cox 12 Vgt 16 Vds + A (1 B ) .
A PPENDIX B
FAILURE OF GCA IN BALLISTIC T RANSPORT
The GCA assumes that the vertical (transverse) electric field
is much higher than the longitudinal field everywhere in a
MOSFET channel. Thus, the channel charge density at any
position x in the channel of an n-type device is determined by
(B1). V is a continuous function with x, i.e.,
Qi (x) = Cox (Vgs Vth V (x)) .
(B1)
Fig. 10. Dependence of (blue solid lines) V1 and (red dashed lines) V2 on b
at different Vgt . V2 crosses zero, whereas V1 never crosses zero.
(B3)
(B4)
2
With k0 = 2q/m vx0
and Vgt = Vgs Vth , (B4) is simplified into (B5), which has three real solutions, i.e., V0 , V1 , and
V2 as in (B6). As b is a function of x, V1 and V2 are functions
of x, i.e.,
1
2Vgt
2
2
V (x) V (x) 2Vgt
+ Vgt
=0
b(x) k0
b(x) k0
V0 = 0
V1 (x) =
V (x) =
2
(B5)
1
2
1
2
2Vgt
1
b(x)k0
2Vgt
1
b(x)k0
4Vgt
b(x)k0
4Vgt
b(x)k0
1
b2 (x)k02
1
b2 (x)k02
(B6)
.
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2.
(B7)
k0
2
k0
k0
When GCA holds throughout the channel, there must be a
physical solution at the drain, which means that Vds < V2 max .
Thus, Vds V2 max is a sufficient condition that GCA fails in
QB transport.
Fig. 11 sketches V2 max as a function of k0 at different Vgt .
GCA is easily violated when Vgt is small or/and k0 is small.
When V2 max is negative, GCA is invalid even under very small
positive Vds .
ACKNOWLEDGMENT
The authors would like to thank Dr. K. Kuhn and
Dr. R. Rios (Intel), Prof. J. del Alamo, Dr. D.-H. Kim
(Massachusetts Institute of Technology), and Prof. Y. Cao
(Arizona State University) for useful discussions and experimental data.
R EFERENCES
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Lan Wei (M11) received the B.S. degree in microelectronics and economics from Peking University,
Beijing, China, in 2005 and M.S. and Ph.D. degrees
in electrical engineering from Stanford University,
Stanford, in 2007 and 2010, respectively.
She was a Research Intern with Intel in 2006,
IBM Research in 2007, and STMicroelectronics and
Grenoble Institute of Technology in 2008. She is currently a Postdoctoral Associate with Microsystems
Technology Laboratories, Massachusetts Institute of
Technology, Cambridge. She has authored or coauthored more than 30 technical papers. She has been serving on the Technical
Program Committee of the IEEE International Electron Devices Meeting since
2011 and has been a reviewer for several IEEE journals. She has contributed
to the Process Integration, Devices, and Structures Chapter of the International
Technology Roadmap for Semiconductors 2009 Edition. Her research focuses
on technology scaling and projection from circuit- and chip-level perspectives,
device/circuit interactive design, and integrated biosystem.
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