FDS6679

30 Volt P-Channel PowerTrench MOSFET

General Description

Features

This P-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.

13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V
RDS(ON) = 13 m @ VGS = 4.5 V
Extended VGSS range (25V) for battery applications

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable
RDS(ON) specifications.

High performance trench technology for extremely

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

High power and current handling capability

low RDS(ON)

SO-8

Absolute Maximum Ratings

Symbol

TA=25oC unless otherwise noted

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

30

VGSS

Gate-Source Voltage

25

ID

Drain Current

13

Continuous

(Note 1a)

Pulsed
PD

50

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

TJ, TSTG

1.0
55 to +175

(Note 1a)

50

C/W

(Note 1)

25

C/W

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

RJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6679

FDS6679

13

12mm

2500 units

2005 Fairchild Semiconductor Corporation

FDS6679 Rev C1 (W)

FDS6679

March 2005

Symbol

Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max Units

Off Characteristics
BVDSS
BVDSS
TJ
IDSS

DrainSource Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

VGS = 0 V, ID = 250 A

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

IGSS

GateBody Leakage

VGS = 25 V,

VDS = 0 V

100

nA

On Characteristics
VGS(th)

30

ID = 250 A, Referenced to 25C

V
23

mV/C

(Note 2)

VDS = VGS, ID = 250 A

ID = 250 A, Referenced to 25C

1.6

VGS(th)
TJ
RDS(on)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient
Static DrainSource
OnResistance

ID(on)

OnState Drain Current

VGS = 10 V,
ID = 13 A
ID = 11 A
VGS = 4.5 V,
VGS=10 V, ID =13 A, TJ=125C
VGS = 10 V,
VDS = 5 V

gFS

Forward Transconductance

VDS = 5 V,

ID = 13 A

44

VDS = 15 V,
f = 1.0 MHz

V GS = 0 V,

3939

pF

972

pF

498

pF

5
7.3
10
9.5

mV/C
9
13
13

50

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics
td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

(Note 2)

VDD = 15 V,
VGS = 10 V,

ID = 1 A,
RGEN = 6

19

34

ns

10

20

ns

td(off)

TurnOff Delay Time

110

176

ns

tf

TurnOff Fall Time

65

104

ns

71

100

Qg

Total Gate Charge

Qgs

GateSource Charge

Qgd

GateDrain Charge

VDS = 15 V,
VGS = 10 V

ID = 13 A,

nC

12

nC

15

nC

DrainSource Diode Characteristics and Maximum Ratings

IS
VSD

Maximum Continuous DrainSource Diode Forward Current

DrainSource Diode Forward
VGS = 0 V, IS = 2.1 A
Voltage

(Note 2)

0.7

2.1

1.2

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 50C/W (10 sec)

62.5C/W steady state
when mounted on a
1in2 pad of 2 oz
copper

b) 105C/W when
mounted on a .04 in2
pad of 2 oz copper

c) 125C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDS6679 Rev C1 (W)

FDS6679

Electrical Characteristics

FDS6679

Typical Characteristics

50

VGS = -10V
-ID, DRAIN CURRENT (A)

40

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

-4.0V

-6.0V

-3.5V
-4.5V

30

-3.0V

20

10
-2.5V
0

VGS = -3.0V

2.6
2.2
1.8

-3.5V
-4.0V

-5.0V
-6.0V
-10V

1
0.6

0.5

1.5

10

20

-VDS, DRAIN TO SOURCE VOLTAGE (V)

40

50

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

0.04

ID = -13A
VGS = -10V

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

30

-ID, DIRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

1.4

1.2

0.8

0.6

ID = -7.0A
0.03
TA = 125oC
0.02
TA = 25oC
0.01

-50

-25

25

50

75

100

125

150

175

2.5

TJ, JUNCTION TEMPERATURE (oC)

3.5

4.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.
100

50
-IS, REVERSE DRAIN CURRENT (A)

VDS = -5.0V
-ID, DRAIN CURRENT (A)

-4.5V

1.4

40

30

20
TA = -125oC
10

25oC
-55oC

VGS = 0V
10
TA = 125oC
1
25oC

0.1

-55oC
0.01
0.001
0.0001

1.5

2.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

3.5

0.2

0.4

0.6

0.8

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6679 Rev C1 (W)

FDS6679

Typical Characteristics

6000
VDS = -5V

ID = -13A

-10V

f = 1 MHz
VGS = 0 V

5000

8
-15V

CAPACITANCE (pF)

-VGS, GATE-SOURCE VOLTAGE (V)

10

CISS

4000
3000
2000
COSS

1000

CRSS
0

0
0

10

20

30

40

50

60

70

80

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

P(pk), PEAK TRANSIENT POWER (W)

-ID, DRAIN CURRENT (A)

20

25

30

50
RDS(ON) LIMIT

100s
1ms
10ms

10

100ms
1s
10s

DC

VGS = -10V
SINGLE PULSE
RJA = 125oC/W
o

TA = 25 C

0.01
0.01

0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)

100

SINGLE PULSE
RJA = 125C/W
TA = 25C

40

30

20

10

0
0.001

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

15

Figure 8. Capacitance Characteristics.

100

0.1

10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0.01

0.1

1
t1, TIME (sec)

10

100

1000

Figure 10. Single Pulse Maximum

Power Dissipation.

1
D = 0.5

RJA(t) = r(t) * RJA

o

RJA = 125 C/W

0.2

0.1

0.1
0.05

P(pk)
0.02

0.01

t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

0.01

SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6679 Rev C1 (W)