PROFET BTS 621 L1

Smart Two Channel Highside Power Switch

Features

Product Summary
Overvoltage protection
Operating voltage

Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection

Vbb(AZ)
Vbb(on)

43
5.0 ... 34

V
V

both

channels:

each parallel
100
50 m
4.4
8.5
A
8
8
A

On-state resistance RON

Load current (ISO) IL(ISO)
Current limitation
IL(SCr)

TO-220AB/7

Application

C compatible power switch with diagnostic

Standard
feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits

Straight leads

SMD

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.

Voltage
source

IN1

IN2

Level shifter

sensor

Rectifier 1

Logic

PROFET

Current
limit 2

GND

OUT1

Temperature
sensor 1

Open load
Short to Vbb
detection 1

Level shifter
Rectifier 2

1)

+ V bb

Gate 1
protection

Limit for
unclamped
ind. loads 1

Charge
pump 1
Charge
pump 2

ST

Current
limit 1

Logic

Voltage

ESD

Overvoltage
protection

Gate 2
protection

Limit for
unclamped
ind. loads 2
Open load
Short to Vbb
detection 2

Signal GND

OUT2

Temperature
sensor 2
R

O1

Load

O2

GND

Load GND

With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.

Semiconductor Group

12.96

BTS 621 L1
Pin

Symbol

Function

OUT1 (Load, L)

Output 1, protected high-side power output of channel 1

GND

Logic ground

IN1

Input 1, activates channel 1 in case of logical high signal

Vbb

ST

Positive power supply voltage,

the tab is shorted to this pin
Diagnostic feedback: open drain, low on failure

IN2

Input 2, activates channel 2 in case of logical high signal

OUT2 (Load, L)

Output 2, protected high-side power output of channel 2

Maximum Ratings at Tj = 25 C unless otherwise specified

Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150C
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 2 , RL= 2.7 , td= 200 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150C, TC = 150C const.
one channel, IL = 4.4 A, ZL = 32 mH, 0 :
both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 :

Symbol
Vbb
Vbb

43
34

Unit
V
V

60

IL
Tj
Tstg
Ptot

self-limited
-40 ...+150
-55 ...+150
75

A
C

EAS

395
790

mJ

1.0
2.0

kV

-10 ... +16

2.0
5.0

V
mA

VLoad dump4)

Values

see diagrams on page 9

Electrostatic discharge capability (ESD)

(Human Body Model)

IN: VESD
all other pins:

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

VIN
IIN
IST

Input voltage (DC)

Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7

2)

3)
4)

Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Semiconductor Group

BTS 621 L1
Thermal Characteristics
Parameter and Conditions
Thermal resistance

Symbol

chip - case, both channels: RthJC

each channel:
junction - ambient (free air): RthJA
SMD version, device on PCB5):

Values
typ
max
-1.7
-3.4
-75
35

Unit

Values
min
typ
max

Unit

min
----

K/W

Electrical Characteristics
Parameter and Conditions, each channel

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1 or 7)
IL = 2 A

Tj=25 C: RON
each channel
Tj=150 C:
Nominal load current, ISO Norm (pin 4 to 1 or 7)
VON = 0.5 V, TC = 85 C
each channel: IL(ISO)
both channels parallel:
Output current (pin 1 or 7) while GND disconnected
or GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 8
Turn-on time
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12 , Tj =-40...+150C
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150C

5)

--

80

100
200

3.5
6.8

160
4.4
8.5

--

--

--10

ton
toff

80
80

200
200

400
400

dV /dton

0.1

--

V/s

-dV/dtoff

0.1

--

V/s

IL(GNDhigh)

A
mA

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.

Semiconductor Group

BTS 621 L1
Parameter and Conditions, each channel

Symbol

Values
min
typ
max

Vbb(on)
Vbb(under)
Vbb(u rst)

5.0
3.5
--

----

Vbb(ucp)

--

Vbb(under)

Vbb(over)
Vbb(o rst)
Vbb(over)
Vbb(AZ)

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Operating Parameters
Operating voltage6)
Undervoltage shutdown
Undervoltage restart

Tj =-40...+150C:
Tj =-40...+150C:
Tj =-40...+25C:
Tj =+150C:
Undervoltage restart of charge pump
see diagram page 13
Tj =-40...+150C:
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150C:
Overvoltage restart
Tj =-40...+150C:
Overvoltage hysteresis
Tj =-40...+150C:
)
7
Overvoltage protection
Tj =-40...+150C:
Ibb=40 mA
Standby current (pin 4)
VIN=0
Tj=-40...+25C:
Tj= 150C:
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 2)8), VIN=5 V
both channels on, Tj =-40...+150C
Operating current (Pin 2)8)
one channel on, Tj =-40...+150C:

6)
7)
8)

V
V
V

5.6

34
5.0
5.0
7.0
7.0

--

0.2

--

34
33
-42

--0.5
47

43
----

V
V
V
V

14
17
--

30
35
12

IL(off)

----

IGND

--

mA

IGND

--

mA

Ibb(off)

At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
See also VON(CL) in table of protection functions and circuit diagram page 8.
Add IST, if IST > 0, add IIN, if VIN>5.5 V

Semiconductor Group

Unit

BTS 621 L1
Parameter and Conditions, each channel

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Protection Functions
Initial peak short circuit current limit (pin 4 to 1
or 7)
Tj =-40C:
Tj =25C:
=+150C:
Tj
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 11)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2) 9)

(on-condition)

11
9
5

18
14
8

25
22
14

--

--

41
150
---

47
-10
--

53
--32

V
C
K
V

--

610

--

mV

20
20

---

400
300

mA

10

30

IL(SCr)

VON(CL)
Tjt
Tjt
-Vbb

Tj=-40 C: IL (OL)
Tj=25 ..150C:

Open load detection voltage10) (off-condition)

VOUT(OL)
Tj=-40..150C:
Internal output pull down
(pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150C
RO

9)

Unit

IL(SCp)

Reverse battery voltage drop (Vout > Vbb)

IL = -2.9 A, each channel
Tj=150 C: -VON(rev)
Diagnostic Characteristics
Open load detection current

Values
min
typ
max

Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
10) External pull up resistor required for open load detection in off state.

Semiconductor Group

BTS 621 L1
Parameter and Conditions, each channel

Symbol

Values
min
typ
max

RI

2.5

3.5

VIN(T+)
VIN(T-)
VIN(T)
IIN(off)

1.7
1.5
-1

--0.5
--

3.5
--50

V
V
V
A

On state input current (pin 3 or 6), VIN = 3.5 V,

Tj =-40..+150C

IIN(on)

20

50

90

Delay time for status with open load after switch

off (other channel in off state)
(see timing diagrams, page 12), Tj =-40..+150C
Delay time for status with open load after switch
off (other channel in on state)
(see timing diagrams, page 12), Tj =-40..+150C
Status invalid after positive input slope
Tj=-40 ... +150C:
(open load)
Status output (open drain)
Zener limit voltage Tj =-40...+150C, IST = +1.6 mA:
Tj =-40...+25C, IST = +1.6 mA:
ST low voltage
Tj = +150C, IST = +1.6 mA:

td(ST OL4)

100

320

800

td(ST OL5)

--

20

td(ST)

--

200

600

5.4
---

6.1
---

-0.4
0.6

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Input and Status Feedback11)

Input resistance
Tj=-40..150C, see circuit page 7
Input turn-on threshold voltage
Tj =-40..+150C:
Tj =-40..+150C:
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 3 or 6), VIN = 0.4 V,
Tj =-40..+150C

11)

VST(high)
VST(low)

If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group

Unit

BTS 621 L1
Truth Table

Normal operation

Channel 1

Open load

Channel 2

Channel 1

Short circuit to Vbb

Channel 2

both channel

Overtemperature

Channel 1
Channel 2
Undervoltage/ Overvoltage

L = "Low" Level
H = "High" Level

IN1

IN2

OUT1

OUT2

L
L
H
H
L
L
H
L
H
X
L
L
H
L
H
X
L
X
H
L
H
X
X
X

L
H
L
H
L
H
X
L
L
H
L
H
X
L
L
H
L
H
X
X
X
L
H
X

L
L
H
H
Z
Z
H
L
H
X
H
H
H
L
H
X
L
L
L
L
L
X
X
L

L
H
L
H
L
H
X
Z
Z
H
L
H
X
H
H
H
L
L
L
X
X
L
L
L

X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)

Terms

bb

ST
BTS621L1
H
H
H
H
H(L12))
H
L
H(L12))
H
L
L13)
H
H(L14))
L13)
H
H(L14))
H
L
L
H
L
H
L
H

Input circuit (ESD protection)

4
I IN1
3

Ibb

Vbb

IN1

OUT1

I IN2
6

IN2

I ST
ST
V
V
IN1 IN2 V
5
ST

PROFET
OUT2
GND

GND

IN

I L1

ESD-ZD I

I L2

GND

7
V
OUT1

2
R

V
ON1
V
ON2

I
GND

ESD zener diodes are not to be used as voltage clamp

at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).

VOUT2

12)

With additional external pull up resistor

An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R GND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
14) Low resistance to V may be detected in the ON-state by the no-load-detection
bb
13)

Semiconductor Group

BTS 621 L1
Status output
Open-load detection

+5V

ON-state diagnostic condition: VON < RON * IL(OL); IN

high

R ST(ON)

ST
+ V bb

ESDZD

GND

VON

ON

ESD-Zener diode: 6.1 V typ., max 5 mA;

RST(ON) < 380 at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).

OUT

Open load
detection

Logic
unit

Inductive and overvoltage output clamp

+ V bb
V

OFF-state diagnostic condition: VOUT > 3 V typ.; IN low

VON

OFF

OUT
GND

EXT

PROFET

Open load
detection

Logic
unit

VON clamped to 47 V typ.

Overvolt. and reverse batt. protection

OUT

Signal GND

+ V bb

IN1

RI

GND disconnect

Z2

IN2

Logic
R ST

bb

ST

3
V

IN1

Ibb

Vbb
OUT1

Z1

GND

IN2

PROFET

ST

GND

OUT2

R GND

Signal GND

VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ,

RGND= 150

V
V
IN1 IN2 ST

V
GND

Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .

Due to VGND >0, no VST = low signal available.

Semiconductor Group

BTS 621 L1
GND disconnect with GND pull up

Inductive Load switch-off energy

dissipation
E bb

4
3
V

Vbb

IN1

OUT1

IN1
6
V
IN2
5

E AS

PROFET

IN2

OUT2
ST

IN
7

GND

V
bb

=
V

ST

OUT

PROFET

ELoad

V bb

ST

EL
GND

GND

ZL

L
RL

ER

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.

Vbb disconnect with energized inductive

load

Energy stored in load inductance:

2

EL = 1/2LI L
While demagnetizing load inductance, the energy
dissipated in PROFET is

4
3

Vbb

IN1

OUT1

high
6

EAS= Ebb + EL - ER= VON(CL)iL(t) dt,

PROFET

IN2

OUT2
5

ST

with an approximate solution for RL > 0 :

7

GND

EAS=

IL L
ILRL
(V + |VOUT(CL)|) ln (1+
)
|VOUT(CL)|
2RL bb

Maximum allowable load inductance for

a single switch off (both channels parallel)

bb

L = f (IL ); Tj,start = 150C,TC = 150C const.,

Vbb = 12 V, RL = 0

Normal load current can be handled by the PROFET

itself.

L [mH]
10000

Vbb disconnect with charged external

inductive load
4
3

IN1

Vbb

IN2

PROFET

1000
OUT1

high
6

OUT2
5

ST

1
D
7

GND

100

bb

10

If other external inductive loads L are connected to the PROFET,

additional elements like D are necessary.

1
3

11

IL [A]

Semiconductor Group

BTS 621 L1
Typ. transient thermal impedance chip case
ZthJC = f(tp), one Channel active
ZthJC [K/W]
10

D=
0.5
0.2
0.1
0.05
0.02
0.01
0

0.1

0.01
1E-5

1E-4

1E-3

1E-2

1E-1

1E0

1E1

tp [s]
Typ. transient thermal impedance chip case
ZthJC = f(tp), both Channel active
ZthJC [K/W]
1

0.1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.01
1E-5

1E-4

1E-3

1E-2

1E-1

1E0

1E1

tp [s]

Semiconductor Group

10

BTS 621 L1

Timing diagrams

Both channels are symmetric and consequently the diagrams

are valid for each channel as well as for permuted channels

Figure 1a: Vbb turn on:

Figure 2b: Switching an inductive load

IN1
IN

IN2

V bb

t
ST

d(ST)

*)

V
OUT1

OUT

V
OUT2

IL
I L(OL)

ST open drain
t

t
*) if the time constant of load is too large, open-load-status may
occur

Figure 2a: Switching a lamp:

Figure 3a: Short circuit

shut down by overtempertature, reset by cooling

IN

IN

ST

OUT

other channel: normal operation

IL
I L(SCp)

IL(SCr)

t
ST
t

Heating up may require several milliseconds, depending on

external conditions

Semiconductor Group

11

BTS 621 L1
Figure 5b: Open load: detection in ON-state, turn
on/off to open load
Figure 4a: Overtemperature:
Reset if Tj <Tjt

IN1

IN2

IN

channel 2: normal operation

ST

OUT1

OUT

L1

channel 1: open load

t
d(ST)

d(ST OL4)

d(ST)

d(ST OL5)

ST
t
t

Figure 5c: Open load: detection in ON- and OFF-state

(with REXT), turn on/off to open load
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state

IN1

IN1
IN2
IN2

channel 2: normal operation

channel 2: normal operation

V

OUT1

VOUT1

I L1
channel 1:
open
load

IL1

open
load

normal
load

t d(ST OL1) t
d(ST OL2)

channel 1: open load

ST
t d(ST OL1)

t d(ST)

d(ST)

t d(ST OL5)

t d(ST OL2)

ST
t

td(ST OL5) depends on external circuitry because of high

impedance

td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ

Semiconductor Group

12

BTS 621 L1
Figure 6a: Undervoltage:

Figure 7a: Overvoltage:

IN

IN

V bb

V bb

V ON(CL)

Vbb(over)

V bb(o rst)

Vbb(u cp)
V

bb(under)

bb(u rst)

OUT

V OUT

ST

ST open drain

Figure 6b: Undervoltage restart of charge pump

on-state

off-state

bb(u rst)

V
V

bb(over)

off-state

VON(CL)

V on

bb(o rst)

bb(u cp)

bb(under)

V bb
charge pump starts at Vbb(ucp) =5.6 V typ.

Semiconductor Group

13

BTS 621 L1
SMD TO 220AB/7, Opt. E3128 Ordering code

Package and Ordering Code

BTS621L1 E3128A T&R:

All dimensions in mm

Standard TO-220AB/7
BTS621L1

TO 220AB/7, Opt. E3230

BTS621L1 E3230

Q67060-S6304-A4

Ordering code
Q67060-S6304-A2

Changed since 04.96

Date Change
td(ST OL4) max reduced from 1500
Dec
1996 to 800s, typical from 400 to
320s, min limit unchanged
EAS maximum rating and diagram
added
Zth specification added
max Output leakage current IL(off)
reduced from 20 to 12 A
increased ESD capability
Typ. reverse battery voltage drop VON(rev) added

Ordering code
Q67060-S6304-A3

Components used in life-support devices or systems must be

expressly authorised for such purpose! Critical components15)
of the Semiconductor Group of Siemens AG, may only be used in
life supporting devices or systems16) with the express written
approval of the Semiconductor Group of Siemens AG.

15) A critical component is a component used in a life-support

device or system whose failure can reasonably be expected to
cause the failure of that life-support device or system, or to
affect its safety or effectiveness of that device or system.
16) Life support devices or systems are intended (a) to be
implanted in the human body or (b) support and/or maintain
and sustain and/or protect human life. If they fail, it is
reasonably to assume that the health of the user or other
persons may be endangered.

Semiconductor Group

14