DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2139
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
The 2SK2139 is N-Channel Power MOS Field Effect Transistor PACKAGE DIMENSIONS

designed for high voltage switching applications. (in millimeters)

10.0±0.3 4.5±0.2
3.2±0.2
2.7±0.2
FEATURES
• Low On-Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)

15.0±0.3

3±0.1
• Low Ciss Ciss = 930 pF TYP.

12.0±0.2
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package

4±0.2
13.5MIN.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 600 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±5.0 A 0.7±0.1 1.3±0.2 2.5±0.1
Drain Current (pulse)* ID(pulse) ±20 A 1.5±0.2 0.65±0.1
2.54 2.54
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W 1. Gate
2. Drain
Channel Temperature Tch 150 ˚C 3. Source
Storage Temperature Tstg –55 to +150 ˚C 1 2 3
Single Avalanche Current** IAS 5.0 A
Single Avalanche Energy** EAS 8.3 mJ MP-45F (ISOLATED TO-220)
* PW ≤ 10 µs, Duty Cycle ≤ 1 % Drain
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

Body
Diode
Gate

Source

Document No. TC-2512

(O. D. No. TC-8071)
Date Published January 1995 P
Printed in Japan © 1995
 2SK2139

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-state Resistance RDS(on) 1.1 1.5 Ω VGS = 10 V, ID = 2.5 A

Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 1.5 S VDS = 10 V, ID = 2.5 A
Drain Leakage Current IDSS 100 µA VDS = 600 V, VGS = 0

Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0

Input Capacitance Ciss 930 pF VDS = 10 V
Output Capacitance Coss 200 pF VGS = 0

Reverse Transfer Capacitance Crss 40 pF f = 1 MHz

Turn-On Delay Time td(on) 20 ns VGS = 10 V

Rise Time tr 10 ns VDD = 150 V

Turn-Off Delay Time td(off) 60 ns ID = 2.5 A, RG = 10 Ω

Fall Time tf 12 ns RL = 60 Ω

Total Gate Charge QG 30 nC VGS = 10 V

Gate to Source Charge QGS 6.0 nC ID = 5.0 V

Gate to Drain Charge QGD 15 nC VDD = 450 V
Diode Forward Voltage VF(S-D) 1.0 V IF = 5.0 A, VGS = 0

Reverse Recovery Time trr 320 ns IF = 5.0 A

Reverse Recovery Charge Qrr 1.4 µC di/dt = 50 A/µs

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

D.U.T. D.U.T.
RG = 25 Ω L RL VGS
VGS 90 %
VGS (on)
RG Wave Form 10 %
0
PG 50 Ω VDD PG. RG = 10 Ω VDD
VGS = 20 - 0 V
ID 90 %
90 %
VGS ID
BVDSS I 10 % 10 %
0 D 0
Wave Form
IAS
ID VDS t td (on) tr td (off) tf
VDD
ton toff
t = 1us
Duty Cycle ≤ 1 %
Starting Tch

Test Circuit 3 Gate Charge

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2
 2SK2139

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
100 80
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

80
60

60
40
40

20
20

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C TC - Case Temperature - ˚C

DRAIN CURRENT vs.

FORWARD BIAS SAFE OPERATING AREA
DRAIN TO SOURCE VOLTAGE
100
Pulsed

V) ID (pulse) 10
10 V
20 PW VGS = 20 V
8V
=
ID - Drain Current - A

ID - Drain Current - A
GS =
V
10 at 10 10
d( 0 s
ite ID (DC)
µ

1m s 6V
im
µ

)L s
(on Po
S 10
RD w
er m 5
Di 10 s
1.0 ss 0
ipa m
tio s
n
Lim
ite
TC = 25 ˚C d
Single Pulse
0.1
1 10 100 1 000 0 5 10
VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE
50
Tch = 125 ˚C
75 ˚C
25 ˚C
ID - Drain Current - A

–25 ˚C
10

1.0
VDS = 10 V
Pulsed
0 5 10
VGS - Gate to Source Voltage - V

3
 2SK2139

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth (ch-c) (t) - Transient Thermal Resistance - ˚C/W

1 000

100 Rth (ch-a) = 62.5 (˚C/W)

10

Rth (ch-c) = 3.57 (˚C/W)

1

0.1

0.01
TC = 25 ˚C
Single Pulse
0.001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS (on) - Drain to Source On-State Resistance - Ω

DRAIN CURRENT GATE TO SOURCE VOLTAGE
10
| yfs | - Forward Transfer Admittance - S

Pulsed
Tch = –25 ˚C
25 ˚C 2.0
75 ˚C
125 ˚C ID = 5 A
2.5 A

1.0
1.0

VDS = 10 V
Pulsed
0.1 1.0 100 0 4 8 12 16 20
ID - Drain Current - A VGS - Gate to Source Voltage (V)

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE

RDS (on) - Drain to Source On-State Resistance - Ω

RESISTANCE vs. DRAIN CURRENT vs. CHANNEL TEMPERATURE

4.0 4.0
VGS (off) - Gate to Source Cutoff Voltage - V

Pulsed

3.0

2.0 2.0
VGS = 10 V

20 V
1.0

VDS = 10 V
ID = 1mA
0
1.0 10 100 –50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C

4
 2SK2139

DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE

RDS (on) - Drain to Source On-State Resistance - Ω

CHANNEL TEMPERATURE FORWARD VOLTAGE
100
VGS = 10 V Pulsed
Pulsed

ISD - Diode Forward Current - A

2.0

ID = 2.5 A 10

1.0 10 V
VGS = 0 V
1.0

0 0.1
–50 0 50 100 150 0 0.5 1.0 1.5 2.0
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10 000 1 000
VGS = 0 V

td (on), tr, td (off), tf - Switching Time - ns

tr
f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF

Ciss
1 000 tf
100

100 td (on)
Coss td (off)
10
Crss
10

VDD = 150 V
VGS = 10 V
1 1.0 RG = 10 Ω
0.1 1.0 10 100 1 000 1.0 10 100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DYNAMIC INPUT CHARACTERISTICS DIODE FORWARD CURRENT
800 16 800
ID = ID (DC) di/dt = 50 A/µs
VGS = 0
VDS - Drain to Source Voltage - V

trr - Reverse Recovery Time - ns

14
VGS - Gate to Source Voltage - V

VDS = 450 V
600 300 V 12 600
150 V
10

400 8 400
VGS
6

200 4 200
VDS
2

0 0
0 10 20 30 40 0.1 1.0 10 100
Qg - Gate Charge - nC ID - Drain Current - A

5
 2SK2139

SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY vs.

INDUCTIVE LOAD STARTING CHANNEL TEMPERATURE
10 12
ID (peak)= ID (DC)

EAS - Single Avalanche Energy - mJ

IAS = 5A
IAS - Single Avalanche Current - A

VDD = 150 V
10

EA 8
S
=
8.3
mJ
1.0 6

4
RG = 25 Ω
VDD = 150 V 2
VGS = 20 V → 0
Starting Tch
0.1 0
100 µ 1m 10 m 100 m 25 50 75 100 125 150
L - Inductance - H Starting Tch - Starting Channel Temperature - ˚C

6
 2SK2139

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.

7
 2SK2139

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11