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Kultur Dokumente
Turn-On Behavior
L. Lu, S.G. Pytel, E. Santi
A.T. Bryant
J.L. Hudgins
P.R. Palmer
Department of Electrical
Engineering
University of South Carolina
Columbia, SC 29208
santi@engr.sc.edu
Department of Engineering
University of Cambridge
Trumpington Street
Cambridge, UK
CB2 1PZ
a.t.bryant.97@cantab.net
Department of Electrical
Engineering
University of Nebraska
Lincoln, NE 68588-0511
I.
INTRODUCTION
This work was supported by the U.S. Office of Naval Research under
Grant N00014-02-1-0623.
2 p ( x, t ) p p( x, t )
= +
x 2
t
(1)
L0
RS
R0
FWD
IL
VDC
LS
LG
CS
RG
IGBT
VGG
LE
1) Turn-on Phase 1
During phase 1, the gate-emitter voltage VGE is below the
threshold voltage VTH and the device is off. The gate
capacitance consists mostly of the gate-emitter capacitance CGE
since the gate-collector (Miller) capacitance CGC is small.
Hence VGE rises exponentially, at a rate set by the gate
resistance RG and CGE.
2) Turn-on Phase 2
Once VGE reaches VTH at the start of phase 2, the MOS
channel starts to conduct and allows electrons to flow into the
drift region under the gate, through the drift region and into the
IL+IRR
VDC
IL
VGG(on)
VCE
IC
VGE
VTH
time
Drift region
voltage drop
VGG(off)
1
3) Turn-on Phase 3
The collector current IC therefore increases to a peak of
IL+IRR; at this point, coincident with the start of phase 3, VCE
begins to decrease as the diode voltage is now falling. The
charge level in the drift region continues to build up as the
collector current is high, and the collector voltage decreases
further as the depletion layer shrinks towards the MOS end of
the drift region.
4) Turn-on Phase 4
Once the drift region adjacent to the MOS channel comes
out of depletion and the accumulation layer under the gate
begins to form, the gate-collector (Miller) capacitance CGC
begins to increase. This sharply reduces the rate at which the
depletion layers can shrink, and signals the start of the gate
turn-on plateau during phase 4.
The decrease in collector voltage during the gate plateau is
rarely an observation of only the depletion layer voltage. This
is due to the forward voltage recovery of the drift region as it
becomes conductivity modulated. The level of stored charge is
still low, due to the high lifetime of the IGBT. This results in a
high forward voltage drop across the drift region. As the charge
level builds up, the drift region voltage drop decreases towards
the final on-state value.
The excess ambipolar charge stored adjacent to the
accumulation layer in the IGBT on-state takes a finite time to
increase. As it builds up, it has the effect of decreasing the drift
region voltage drop as it forms, since it allows the minimum
carrier density in the drift region under the gate to increase
from the drift region doping level. Since the drift region
voltage drop mostly occurs across this region at this stage, it
x 10
Off-state
0.345s
0.477s
0.527s
0.542s
0.573s
0.729s
2.962s
15.462s
1.8
1.6
-3
5) Turn-on Phase 5
Finally, once the collector voltage has reduced
significantly, the MOS channel voltage decreases to the onset
of linear operation, marking the start of phase 5. Any further
fall in channel voltage results from an increase in gate voltage
VGE, as the load current is approximately constant. The gateemitter voltage VGE now charges to the on-state gate voltage
VGG(on) at a rate set by RG and CGE+CGC.
1.4
1.2
1
0.8
0.6
0.4
0.2
0
50
100
150
Position (m)
200
250
Fig. 3: Detail of the IGBT hole concentration under the gate during the turn-on
process simulated in Silvaco ATLAS for a NPT planar IGBT. The P emitter
(collector terminal) is at x=0 m and the gate at x=270m.
4
15
-1
x 10
Off-state
0.345s
0.477s
0.527s
0.542s
0.573s
0.729s
2.962s
15.462s
10
50
100
150
Position (m)
200
250
Fig. 4: Detail of the IGBT electric field under the P-well during the turn-on
process simulated in Silvaco ATLAS for a NPT planar IGBT. The P emitter
(collector terminal) is at x=0 m and the P-well at x=264m.
RLOAD
RG
VGG VGE
VDC
IC
VCE
IC
time
0
1
VGG(on)
VTH
0
Fig. 6. Typical waveforms for IGBT resistive turn-on.
VCE
VGE
(2)
VDC
VDC VCE
RLOAD
LS
IGBT
IC =
time
200
150
Vge
Vce
100
100
50
Current (A)
Ic
200
0
Ia
-50
-100
-100
-200
Vak
-300
-150
-200
-400
-250
-500
2.0E-07 4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06 1.6E-06 1.8E-06 2.0E-06
Time (s)
Fig. 7: Inductive switching waveforms for IGBT turn-on and diode turn-off
using RG=10, at 300V and 100A. The gate voltage VGE is scaled by a factor
of 10.
300V 100A 10ohm IGBT turn-off
700
350
600
300
500
250
200
Voltage (V)
400
Vce
300
150
100
200
Current (A)
RESULTS
A. Inductive Switching
Figs. 7 and 8 give the inductive switching waveforms for
IGBT turn-on and turn-off respectively at 300V, 100A using a
gate resistance RG of 10. Similar waveforms are given in
figs. 9 and 10 for 400V operation. IGBT turn-on waveforms
only are shown in figs. 11 and 12 for 200V and 150V operation
respectively, with a current of 100A and a gate resistance of
10. A reduced gate resistance of 2 is used for turn-on in
fig. 13, with conditions of 200V and 100A. Fig. 14 shows the
effect of reduced current, with conditions of 300V, 50A and
10.
250
400
300
50
100
Ic
0
-100
-50
Vge
-100
-200
2.0E-07 4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06 1.6E-06 1.8E-06 2.0E-06
Time (s)
600
300
400
200
Ic
200
Voltage (V)
IV.
500
100
Vge
Vce
0
Ia
-200
Current (A)
Voltage (V)
-100
Vak
B. Resistive Switching
Figs. 15 and 16 show the resistive switching waveforms for
IGBT turn-on and turn-off respectively at 400V, 100A using a
gate resistance of 10. Turn-on waveforms at 200V, 100A,
using a gate resistance of 10, are given in fig. 17. The gate
resistance is reduced to 2 for the turn-on waveforms at 400V,
100A in fig. 18.
-400
-200
-600
-300
2.0E-07 4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06 1.6E-06 1.8E-06 2.0E-06
Time (s)
Fig. 9: Inductive switching waveforms for IGBT turn-on and diode turn-off
using RG=10, at 400V and 100A. The gate voltage VGE is scaled by a factor
of 10.
200
600
150
250
400
200
150
300
Ic
200
100
200
50
Voltage (V)
400
Current (A)
Vce
Voltage (V)
500
Vge
Vce
100
0
Ia
100
50
Current (A)
800
0
-50
-100
Vak
Ic
0
0
Vge
-100
-300
-150
-400
-200
-200
-50
2.0E-07 4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06 1.6E-06 1.8E-06 2.0E-06
-250
-500
2.0E-07 4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06 1.6E-06 1.8E-06 2.0E-06
Time (s)
Time (s)
500
Fig. 13: Inductive switching waveforms for IGBT turn-on and diode turn-off
using RG=2, at 200V and 100A. The gate voltage VGE is scaled by a factor of
10.
250
600
400
200
450
300
150
Ia
-100
-200
-100
-300
-150
Vge
Vce
50
0
Ia
-50
-150
-50
Vak
100
150
Voltage (V)
50
Current (A)
Vge
Vce
150
Ic
100
100
200
300
Ic
200
Current (A)
Fig. 10: Inductive switching waveforms for IGBT turn-off using RG=10, at
400V and 100A. The gate voltage VGE is scaled by a factor of 10. Diode turnon waveforms are omitted for clarity.
Voltage (V)
-200
Vak
-400
-200
2.0E-07 4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06 1.6E-06 1.8E-06 2.0E-06
-300
-100
-450
-150
-600
3.0E-07
Time (s)
5.0E-07
7.0E-07
9.0E-07
1.1E-06
1.3E-06
1.5E-06
1.7E-06
-200
1.9E-06
Time (s)
Fig. 11: Inductive switching waveforms for IGBT turn-on and diode turn-off
using RG=10, at 200V and 100A. The gate voltage VGE is scaled by a factor
of 10.
Fig. 14: Inductive switching waveforms for IGBT turn-on and diode turn-off
using RG=10, at 300V and 50A. The gate voltage VGE is scaled by a factor of
10.
200
200
600
Vge
150
150
100
100
Ia
-50
-50
-100
Vak
-100
-150
-150
-200
-200
-250
-250
-300
3.00E-07 5.00E-07 7.00E-07 9.00E-07 1.10E-06 1.30E-06 1.50E-06 1.70E-06 1.90E-06
-300
Time (s)
Fig. 12: Inductive switching waveforms for IGBT turn-on and diode turn-off
using RG=10, at 150V and 100A. The gate voltage VGE is scaled by a factor
of 10.
125
Ic
400
50
0
150
500
Voltage (V)
Voltage (V)
Vce
Current (A)
Ic
50
300
100
75
200
Vge
100
50
25
Current (A)
250
Vce
0
-100
-25
-200
-50
2.0E-07 4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06 1.6E-06 1.8E-06 2.0E-06
Time (S)
Fig. 15: Resistive switching waveforms for IGBT turn-on using RG=10, at
400V and 100A. The gate voltage VGE is scaled by a factor of 10.
600
150
125
500
400
100
300
75
200
50
25
100
Current (A)
Voltage (V)
Vce
Ic
0
0
Vge
-25
-100
-50
-200
2.0E-07 4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06 1.6E-06 1.8E-06 2.0E-06
Time (S)
Fig. 16: Resistive switching waveforms for IGBT turn-off using RG=10, at
400V and 100A. The gate voltage VGE is scaled by a factor of 10.
200V 100A 10ohm IGBT resistive turn-on
150
125
250
Ic
200
75
150
Voltage (V)
100
Vge
50
100
50
Vce
25
Current (A)
300
0
-50
-25
-100
-50
-75
-150
2.0E-07 4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06 1.6E-06 1.8E-06 2.0E-06
Time (S)
Fig. 17: Resistive switching waveforms for IGBT turn-on using RG=10, at
200V and 100A. The gate voltage VGE is scaled by a factor of 10.
400V 100A 2ohm IGBT resistive turn-on
500
Voltage (V)
120
Ic
100
400
80
300
60
200
Vge
40
20
100
Current (A)
600
Vce
0
-20
-100
-40
-200
1.0E-07 2.0E-07 3.0E-07 4.0E-07 5.0E-07 6.0E-07 7.0E-07 8.0E-07 9.0E-07 1.0E-06
Time (s)
Fig. 18: Resistive switching waveforms for IGBT turn-on using RG=2, at
400V and 100A. The gate voltage VGE is scaled by a factor of 10.
V.
DISCUSSION
CONCLUSIONS
P.R. Palmer, E. Santi, J.L. Hudgins, X. Kang, J.C. Joyce, P.Y. Eng,
"Circuit Simulator Models for the Diode and IGBT with Full
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