CHAPTER5

1. A30keVimplantof11Bisdoneintobaresilicon.Thedoseis1012cm2.

(a) Whatisthedepthofthepeakoftheimplantedprofile?

(b) Whatistheconcentrationatthisdepth?

(c) Whatistheconcentrationatadepthof3000(0.3m)?

(d) Themeasuredconcentrationisfoundtobeanorderofmagnitudelargerthanthevalue
predictedinpart(c),althoughtheprofileagreeswithanswers(a)and(b).Giveapossible
explanation,assumingthatthemeasuredvalueiscorrect.

8.Awaferisimplantedwithsulfur(S)atanenergyof100keVandadoseof1x1013cm2.Thewafer
hasa500thicklayerofAlGaAsontopofaverythickGaAsbulk,asshowninthe
accompanyingfigure.AssumethattheAlGaAslayerbehavesjustlikeconventionalGaAs.

(a) Atwhatdepthistheimplantedsulfurconcentrationthehighest?

(b) Whatistheconcentrationatthispoint?

(c) Sketchaplotofthelogoftheconcentrationversusdepth,indicatingtheAlGaAsandGaAs
regions.WillmostoftheimplantedSbeintheAlGaAsorintheGaAs?Why?

11.Atypicalhighcurrentimplanteroperateswithanionbeamof2mA.Howlongwouldittaketo
implanta150mmdiameterwaferwithO+toadoseof1x1018cm2?

CHAPTER6

3.LargediameterwafersaredifficultforRTPathightemperaturewithouttheoccurrenceof

thermoplasticinducedslipattheedgeofthewafer.Describethereasonsforthisslip.Iftheslipismore
pronouncedafterhightemperatureramps,whatdoesthistellyouabouttheradiationpatternatthe
surfaceofthewafer?

5.Arapidthermalprocessingsystemisusedtoheata200mmdiametersiliconwaferto950C.

(a) Iftheeffectiveemissivityofthewaferis0.7,useEquation6.4tocalculatetheamountof
powernecessarytomaintainthistemperature.

(b) Ifonewantstorampthetemperatureat100C/sec,whatadditionalamountofpoweris
required?Youcanassumethatthewaferis700mthickandthatyoucanusetheroom
temperaturespecificheatandmassdensityforsilicongiveninAppendixII.

7.ExplainthereasonsformultizoneheatinginRTP.

d.) A possible explanation for measured concentration to be larger than

the predicted part in c.) is because of channelling. The models use a
strictly gaussian curve to model the distribution of dopant as a function of
depth. Gaussian statistics assume a completely random scattering
among a blank field. In reality, the crystalline structure provides channels
for dopant to travel further without obstruction to slow it's path. Though
wafer spin and tilt theoretically "randomize" the field, some dopant
particles will still find these channels and migrate further than the model
predicts.

Most of the S will be in the GaAs. The peak of the gaussian curve is at
750A, which is beyond the AlGaAs/GaAs interface. Since we are
assuming both layers behave the same, the bulk of the dopant will be
in the GaAs layer.

Reference .ppt from UC Berkeley - http://www-inst.eecs.berkeley.edu/

~ee143/fa10/lectures/Lec_08.pdf

#3. Thermoplastic slip occurs as a result of various stresses on the wafer.

These stresses are typically the result of severe temperature gradients. If
slip is more pronounced after high temperature ramps, the radiation
pattern is likely uneven across the wafer surface.

7.) Explain the reasons for multizone heating.

In rapid thermal processing, multizone heating is used for various

reasons. When the wafer is heated rapidly, temperature gradients occur
across the wafer surface. This temperature gradient, if severe enough,
can cause defects, wafer warping, and edge eects such as
thermoplastic slip. Multizone heating allows for temperature uniformity
across the wafer for a wide range of process conditions. This is especially
important because RTP is used across several dierent semiconductor
processes (epitaxy, anneal, oxide growth...) that require unique processing
conditions (temperature ramp profile, process time, cooling profile...).