Nano Micro

Nano/Micro-Electro-Mechanical-Sensor Systems
V. Ramgopal Rao
Centre of Excellence in Nanoelectronics,
Department of Electrical Engineering
Indian Institute of Technology (IIT) Bombay, Powai,
Mumbai, India
http://www.ee.iitb.ac.in/~rrao
Email: rrao@ee.iitb.ac.in
IIT Bombay
MICRO/NANO TECHNOLOGIES - AAA

Micro/Nano-fabrication technologies ideally suited for India:
Diverse Applications, high-tech, batch processing and low
cost per die
Nanotechnology sustained high levels of funding in focused
high technlogy areas with product/technology as a focus
Build Multi-disciplinary Research Teams
Available, Accessible and Affordable technologies
more than half of Indias population is under the age of 25, and one million
people a month are expected to join the labour force over the next decade.
Technologies that help youth excel & acquire skills
Indias massive agricultural sector employs about 60% of the population, yet
accounts for only about 17% of total GDP

Use innovation/technology as a vehicle to improve productivity
healthcare a major concern, rural health infrastructure hardly existent

14 million persons are infected with TB in India and more than 300,000 deaths occur every
year; about 2 million cases of malaria are recorded every year, by 2015 close to 5 million
infected with AIDS; 17.1 million lives are claimed by cardiovascular diseases, with 82% of
deaths occurring in low- and middle-income countries like India. India is home to about 40
Million diabetic patients .
Add to this: 42% Indians live on $2 per day & 22 Million population pushed below poverty
line annually due to healthcare expenditure
Security- a major concern area for India

Energy Besides all other energy related areas, we need to also focus on
Energy Scavenging Technologies (Vibrations, microwave energy..)

>> Available, Accessible and Affordable technologies
B. K. Chakravarthy
Industrial Design Centre, IIT Bombay
Students/Post-docs:
Seena, Nitin Kale, Manoj Joshi, Sheetal Patil, Prashanthi, Abhinav
Prasad, Deepika Reddy, Dilip Agarwal, Sudip Nag, Naveen Kadayinti,

Neena, Avil Fernandez, Sahir Gandhi, Gaurav Chatterjee, Rashi
Nathawat , Yashwant, Sandeep Surya Goud, Mihir,
Faculty Collaborators:
S.Mukherji (Immobilization), Dept. of Bio-Sciences & Engg.

D.K.Sharma (Instrumentation): Dept. of Electrical Engineering
Anilkumar (Surface coatings), Dept. of Chemistry

M.Shojaei (ASIC Design); Dept. of Electrical Engineering
P.R.Apte (Fabrication): Dept. of Electrical Engineering
C.P.Rao (Calixerines): Dept of Chemistry
M. Ravikanth (Porphyrins): Dept of Chemistry
Prita Pant (Nano-indentation): Dept. of Metallurgy & Mat.Sci.
V.R.Palkar (Multi-ferroics), Dept. of Electrical Engg.
B. K. Chakravarthy (Prototype-development) Industrial Design Centre
Amit Agarwal (Micro-fluidics), Dept. of Mechanical Engineering
T.Kundu (photo-thermal), Dept of Physics
IIT Bombay
Funding from NPSM, DIT,V.R.
NPMASS,
DST
Rao: rrao@ee.iitb.ac.in
IIT Bombay
A Rs. 300 Crore National Nano-fabrication Facility @ IIT Bombay

created from funding by DeitY, other agencies and industries. A
similar centre (CENSE) in operation at IISc Bangalore. Two new
centres being created at IIT Delhi & IIT Madras.
IIT Bombay
CEN IIT Bombay
CEN IIT Bombay
IIT Bombay
CEN IIT Bombay
IIT Bombay
Multi Disciplinary nature of Activities in the CEN
Total number of IITB Faculty members using the CEN@IITB: 56
IIT Bombay
Total number of IITB Ph.D. Students using the CEN Facility @ IITB: 101
IIT Bombay
IIT Bombay
What is Nanotechnology ?
Engineering of materials at the
Nanoscale in order to achieve useful
functions
A place for every atom and every atom in its place
How small is a Nano-meter really?
the length finger nails grow roughly in one second
IIT Bombay
Nanoscale = High Ratio of Surface Area to Vol.

Repeat 24 times
For example, 5 cubic centimeters about 1.7 cm per side of

material divided 24 times will produce 1 nanometer cubes and
spread in a single layer could cover a football field
Source: Clayton Teague, NNI
M. Meyyappan, NASA Ames Res. Center
IIT Bombay
What really is Nanotechnology ?

size dependence
At the nanometer scale, properties become size-dependent
4R
1
Higher surface to volume ratio (sphere):
3
Spherical iron nanocrystals
4 R
R
2
3
Surface to volume ratio
J. Phys. Chem. 1996,
A 3 nm iron particle hasVol.
50%
atoms
on the surface
100,
p. 12142
A 10 nm particle
20% on the surface
A 30 nm particle
only 5% on the surface
For example,
(1) Thermal properties melting temperature
(2) Mechanical properties adhesion, capillary forces
(3) Optical properties absorption and scattering of light
(4) Electrical properties tunneling current
(5) Magnetic properties superparamagnetic effect
New properties enable new applications
IIT Bombay
More than Moore Era of CMOS Scaling

Spintronics,
Molecular
Electronics
Etc. s
Adapted from Evolution scenario for III-V/Ge devices on Si platform through (Takagi et al., ICSICT, 2010
pp.50-53, 2010)
IIT Bombay
V.Ramgopal Rao
More than Moore Era in CMOS
M. B. Wolfgang et al., 2010, "More than Moore" White paper (Intel)

IIT Bombay
IIT Bombay
An Ultra-sensitive Piezo-resistive
Polymer Cantilever Technology
iSens: A point of care system for Cardiac Diagnostics
Explosive Detection/Other Environmental sensors

Technology Enablers for Web enabled Cardiac
monitoring
System-in-Package solutions
IIT Bombay
Explosive Detection

monitoring
IIT Bombay
10
iSens: A point of care system for Cardiac

Diagnostics
Ischaemic heart disease is the leading cause of death globally. About
one-third of all the deaths in the world are attributed to cardiac
problems. (Lancet 2006; 367: 1747-1757).
57 million (80%) deaths were in low-income countries. (Circulation
2001; 104: 2746-2753) , & (N Engl J Med 2004; 350 (24): 24382440).
Between 1990 and 2020, these diseases are expected to increase by
120% for women and 137% for men in developing countries,
compared with 30-60% in developed countries. (Circulation 2001; 104:
2855-2864).
By 2010, 60% of the world's heart disease is expected to occur in
India. (BMJ 2004; 328: 807-810).
South Asians have a high prevalence of risk factors, have Ischaemic
heart disease at an earlier age than people in developed countries. (J
Am Coll Cardiol 2001; 38: 682-687, JAMA 2007; 297: 286-294).
IIT Bombay
iSens : Considerations
Inexpensive, smart, rugged sensors that can be used

outside laboratories.
Should be relevant to present ground realities in India.
Changing lifestyles have made South Asians susceptible
to cardiac dysfunctions such as Acute Myocardial
Infarction.
Damage to an area of heart muscle occurs due to

inadequate supply of oxygen to that area.
Diagnosis of AMI done through various clinical and
pathological tests (e.g. ECG, CPK-MB levels, Troponin I
& T levels, myoglobin, etc.).
40% lawsuits in USA for wrong AMI diagnosis
V.R. Rao: rrao@ee.iitb.ac.in
IIT Bombay
11
Molecular Markers
Enzymatic markers
Creatine kinase-Total (CK)
Creatine kinase MB (CK-MB)
Lactate dehydrogenase (LDH)
Aspartate aminotransferase (AST)
Glycogen phosphorylase isoenzyme BB (GPBB)
Protein molecules
Troponin
Myoglobin
FABP
Cell-free laddered DNA fragments
IIT Bombay
Molecular Markers: Issues

Concentration & change of concentration
across individuals
Specificity
Temporal response
Ease of designing assay protocols
Protocol robustness
Of the marker for the dysfunction
Of the sensor for the marker
Of the sensor system, including
reagents
IIT Bombay
12
Temporal Variations of Markers

Time
(hrs)
Trop.I
(ng/ml)
CKMB
(ng/ml)
Myo.
(ng/ml)
Normal 0.02-.4
0 .1- 7
20-92
0.4
200
0.8
900
12
10.4
30
50
24
22
60
40
48
14
18
40
72
9.3
39
A: early release of myoglobin or CKMB isoforms after AMI;

B: cardiac troponin after AMI; C: CK-MB after AMI;
D: cardiac troponin after unstable angina.
IIT Bombay
Heart-type fatty acid binding protein

(hFABP)
European Journal of Cardio-thoracic Surgery 19 (2001) 859-864
IIT Bombay
13
Conventional Approaches
Sequential assays for enzymatic activity
Immunoassays:
ELISA (Enzyme Linked ImmunoSorbant
Assay)
Radioimmunoassay
Immunoprecipitation
Chromatography (!)
Electrophoresis for separating isomers
and then looking for activity (for lab
(skilled labor, time consuming))
IIT Bombay
Our approach
Biosensor array based on microfabricated
sequential assay systems
General approach is to use affinity sensors
Use direct affinity sensors:
Affinity cantilevers
EIS capacitors
Conducting polymer devices
IIT Bombay
14
A Review on Cantilever Sensors
Surface Stress
Temperature changes
Resonant Frequency
Surface stress changes detected of the order of 106N/m

Measure temperature changes down to 105 K
Mass change estimations in the atto- to zepto-gram (1021 g)
Silicon based materials, Reliability & Optical Detection
Anja Boisen et. al., Cantilever-like micromechanical sensors, IOP Rep. Prog. Phys.
74 (2011) 036101 (30pp)
IIT Bombay
tensile
compressive
In 1909, Stoney developed a theory to measure surface

stress/elastic strain of a thin film deposited onto a sheet of
metal. Modified Stoneys formula:
Fundamental understanding still lacking on the origin of surface stress

Anja Boisen et. al., Cantilever-like micromechanical sensors, IOP Rep. Prog. Phys.
74 (2011) 036101 (30pp)
IIT Bombay
15
What happens when reactions occur on

the Cantilever surface? ..1
Binding of molecules to sensor surface

leads to changes like:
Conformational changes or physical
steric crowding
Changes in surface charge
Changes in molecular density in sensing
layer
Configurational entropy changes
Changes in Intermolecular energetics
Covalent attachments
Wu et al, Origin of nanomechanical cantilever motion generated from biomolecular interactions,
PNAS,February 13, 2001 vol. 98 no. 4, 15601564
IIT Bombay
Source of Cantilever surface stress ..2

Kinetic analysis of binding reaction:
It is a reversible reaction
Gibbs free energy as it is a function of enthalpy and entropy
changes of the reaction, G= H - T S
The driving force in antigenantibody binding originates from an
increase in the entropy of solvent molecules displaced from the
interface upon complexation (i.e. it is entropy-driven).
Thermodynamic analyses have suggested that a considerable number of

antigenantibody interactions are enthalpy-driven, i.e. they make
favourable enthalpy changes with some opposition from the negative
entropy contribution to association.
Hydrogen bonds contribution: In addition to the direct antigenantibody
hydrogen bonds, solvent-mediated hydrogen bond formation drives the
interaction. Water molecules in the solvent form hydrogen bonds with
both antigen and antibody.
Anja Boisen et al, Cantilever-like micromechanical Sensors, 2011 Rep. Prog. Phys. 74,
036101
IIT Bombay
16
Resonant Frequency Changes
Bimetallic Cantilever tip deflection:
IIT Bombay
iSens Functional Architecture

Disposable part
Sample
Input Filter
Reactor
Reagent
Biosensor
Array
Signal
Conditioning
+
Display
Control + Processing
Electronics
IIT Bombay
17
iSens Prototype
Reference
Myoglobin
Reference
CK-MB
1.5 cm
Drain
Analyte
Plastic
Silicon/SU8
IIT Bombay
3 cm
Poly Si (Piezoresistor)
Cantilever/EIS/CP
Contacts
Analyte (serum)
IIT Bombay
Biosensor Array: Affinity

Cantilevers-1
Based on resonating
structure 0r deflection:
Attachment changes
mass or stiffness of
resonating structure
and thence resonant
frequency
Attachment changes
the surface stress
leading to a bending of
the cantilever
Antibodies
Mirror
Silicon
Picture courtesy: Anja Boisen
et.
al., IOP Rep. Prog. Phys. 74
(2011) 036101 (30pp)
Cantilever Video
G.F.=(R/Ro)/
IIT Bombay
18
Polymer Microcantilevers
Displacement Z
3L2 1
Et 2
Polymer considered : SU-8

Advantages of SU-8
Lower Young's modulus (40 X lower compared to
Si based materials!)
(5 GPa)
Schematic of microcantilever sensor
Inexpensive fabrication process & Ease in patterning

Compatibility for integrating sensor with CMOS & other micro fluidic components
Relatively stress free nature of the deposited film.
N.Kale et al., (IEEE/ASME) Journal of Microelectromechanical Systems (J-MEMS), Dec. 2006
M. Joshi et al., IEEE/ASME Journal of Microelectromechanical Systems (J-MEMS), Vol. 20, No. 3, June 2011
IIT Bombay
Polymer Microcantilevers -Piezoresistive

transduction
R
4
K
s
R
Eh
K
sensitivity
E
Piezoresistive layers
Gold
-strain gauge.
-K 2.
-Easy to
incorporate.
- Lower
sensitivity.
J. Thaysen et al.,
IEEE MEMS Conference
2002.
Poly Silicon
-Piezoresistive
-K > 20 (dependent
on material
optimization)
-Low Temperature
deposition methods
like HWCVD.
- Stiffness increase
- Smaller SNR
IEEE J-MEMS, 2009
IIT Bombay
SU-8/nanoparticle (or
nanowire) Composites
-Piezoresistive
-K 90
-Spin coatable
- Compatible with
SU-8
- Does not affect the
overall stiffness
- Good sensitivity
- Suffers from
Reproducibility
Nanotechnology, 2011
IIT Bombay
OFET/TFT
Embedded
Cantilevers
-Piezoresistive
- K>200
- Spin coatable
- Lower stiffness
- Good Sensitivity
- Better
homogeniety
IEEE J-MEMS, 2011
IIT Bombay
IIT Bombay
19
SU8/Poly-Si/SU8 Cantilevers for detecting

Myoglobin
R/R (K/E) (4ss t )

Low Youngs Modulus E (5 GPa) of SU-8
High Gauge Factor K (20) of polysilicon
SU-8 processing: simple and low cost

Immobilization on SU-8: Surface
modification by novel ammonia cracking
process (patented process)
N.Kale et al., (IEEE/ASME) Journal of Microelectromechanical Systems (J-MEMS), Dec. 2006

M.Joshi et al., Journal of Micromechanics and Microengineering Dec 2010
M.Joshi et al., (IEEE/ASME) Journal of Microelectromechanical Systems (J-MEMS), , June
2011
IIT Bombay
Hot-Wire CVD Cluster Tool for Low-Temperature

poly/nitride Deposition
Gas
Manifold
MFC
Exhaust
line
LLTC
Filament
Assembly
Shaft
Reactor
Slit
Valve
H2/NH B2H6
3
Gate Valve
View Port
Pirani Gauge
Nitin S. Kale et al., (IEEE/ASME) Journal of Microelectromechanical Systems (J-MEMS), Volume

18, Feb. 2009
IIT Bombay
20
HWCVD Polysilicon as a
Piezoresistor
Gauge Factor defined as
G.F.=(R/Ro)/
High gauge factor of polysilicon (K~30) as compared to that of
metal (K~2)
Gauge factor of polysilicon depends on
Grain size
Doping concentration
Doping type
Texture
Above factors dependent upon hot-wire process parameters like
substrate temperature, hydrogen dilution and boron flow
IIT Bombay
Hotwire CVD Polysilicon as

Piezo
HWCVD poly conductivity
as a function of temp
Calibration for glass substrate
IIT Bombay
21
Low-temp HWCVD piezo-poly for SU8/nitride

Cantilevers
Experimental
G.F.=(R/Ro)/
Experimental
Experimental
N.Kale et al., Proc. of the 8th IEEE Conference on Nanotechnology (IEEE NANO 2008),
August 18-21, 2008, USA
IIT Bombay
HWCVD Films for Polymer

Bio-MEMS
Crystallinity (intensity of <111>

peak) increases with polysilicon film
thickness.
Grain size determined from

X-ray data, using Scherrers
formula
IIT Bombay
22
HWCVD Films for Polymer BioMEMS

Glass
RMS
roughness
: 1.8 nm
HWCVD films deposited on SU-8/Glass show a

clear <111> peak while the ones on glass show a
high amorphous content
SU-8 on
glass
RMS
roughness
:
0.58 nm
IIT Bombay
HWCVD Film Optimization
XRD of polysilicon films

deposited on SU-8 coated
silicon substrate with different
hydrogen dilution
Variation of gauge factor and grain size

for polysilicon films deposited on SU-8
coated glass and bare glass substrate
with different hydrogen dilution
IIT Bombay
23
Low-temp HWCVD piezo-poly for SU8/nitride

Cantilevers
Experimental
G.F.=(R/Ro)/
Experimental
Experimental
N.Kale et al., Proc. of the 8th IEEE Conference on Nanotechnology (IEEE NANO 2008),
August 18-21, 2008, USA
IIT Bombay
SU8-Polysilicon-SU8 Process Flow &

Characterization
Nitin S. Kale et al., (IEEE/ASME) J-MEMS, Vol. 18, Feb. 2009
M. Joshi et al., Journal of Micromechanics and Microengineering, vol. 20 (2010) 125007.

IIT Bombay
24
First demonstration of SU-8/Polysilicon/SU-8

Cantilever
Straight cantilevers: Optimized process conditions

Measured Resonant Frequency: ~40 KHz, Spring Constant: 0.25
N/mt
N.S. Kale et al., (IEEE/ASME) Journal of Microelectromechanical Systems (J-MEMS) Feb., 2009
IIT Bombay

transduction
R
4
K
s
R
Eh
K
sensitivity
E
Gold
-strain gauge.
-K 2.
-Easy to
incorporate.
- Lower
sensitivity.
J. Thaysen et al.,
2002.
Poly Silicon
-Piezoresistive
-K > 20 (dependent
on material
optimization)
-Low Temperature
deposition methods
like HWCVD.
- Smaller SNR
IEEE J-MEMS, 2009
IIT Bombay
-Piezoresistive
-K 90
-Spin coatable
- Compatible with
SU-8
overall stiffness
- Good sensitivity
- Suffers from
Reproducibility
IIT Bombay
OFET/TFT
Embedded
Cantilevers
-Piezoresistive
- K>200
- Spin coatable
- Lower stiffness
- Good Sensitivity
- Better
homogeniety
IEEE J-MEMS, 2011
IIT Bombay
IIT Bombay
25
Polymer Cantilevers with embedded Carbon Black

particles
Appl. Phys. Lett. 88, 113508 (2006); L.

Gammelgaard,
P. A. Rasmussen et al., TU Denmark
CB/Polymer composite conducts for CB

concentration above percolation threshold
Conduction due to tunneling between two

aggregates : R/R due to change in
tunnel distance upon application of strain
Expected to be highly sensitive

IIT Bombay
Variability issues with Polymer Nano-composites
IIT Bombay
26
Polymer Nano particle composite

SU-8/Carbon Black Composite Nano-indentation Characterization
Scanned images of a set of Berkovich indent at the SU-8 surface
Schematic of load displacement curve

Oliver Pharr method to extract H and E
Load Vs indentation depth for different loads

IIT Bombay
Polymer Nano particle composite

SU-8/Carbon Black Composite :Characterization
Youngs Modulus of the composite as a function

of CB vol %
1. Parallel mixing model:
Hardness of composite as a function of CB vol %.
2. Guth-Smallwood equation for modulus
Seena et al., Nanotechnology , 22 (2011) 295501
IIT Bombay
27
SU-8 cantilevers with embedded Carbon Black Nano

particles
Parameter
Value
Cantilever
length
250m
Width
120m
Upper SU-8
thicknes
s
400nm
Lower SU-8
thicknes
s
1.8m
Die area
3.4mmX
1.5mm
Thinnest polymer
cantilevers with
embedded Nanoparticles
Fabrication of the devices IIT Bombay 6 mask process
Seena.V. et al., Pro. of the 5 th International Workshop on Nanomechanical

Cantilever Sensors, May 19 - 21, 2008,Mainz, Germany 2008
IIT Bombay
Highly sensitive self standing SU-8

cantilevers with embedded CB
Seena V. et al., Solid State Sciences (Elsevier), Volume 11, Issue 9, September 2009
IIT Bombay
28
Packaged Polymer Composite Cantilever Dies

Packaging: CMET PUNE
Microcantilever
Die
Package
SEM of the released SU-8/CB

microcantilever
Package Lid with

Integrated Heater
Inlet
Outlet
IIT Bombay
Development of Polymer composite

microcantilever sensor
Characterization
Resonance frequency was measured using Polytek Laser Doppler Vibrometer

(collaboration with Prof. Rudra Pratap, IISc)
Electromechanical characterization
V. Seena et al., 23rd IEEE International

Conference on MEMS (MEMS 2010)
Resonance Frequency =38.9 kHz
IIT Bombay
29
Electromechanical Characterization of SU-8 cantilevers with

embedded CB composite
Parameter
SU-8/CB/SU- SU-8/Au/SU-8
8
cantilever
cantilever
Deflection
sensitivity
[ppm]
1.1/nm
0.3/nm
Surface stress
sensitivity
[N/m] -1
7.6*10-3
1.3*10-2
These cantilevers are expected to

provide R/R of 10s of ppm for a
typical antibody-antigen interaction
[5mN/m]
Surface stress sensitivity: ~8 ppm/ (mN /mt)
Resonant frequency: 22 KHz
Spring constant: 0.4 N/mt
IIT Bombay
Noise in Polymer Composite Cantilevers
Higher noise levels compared to SU8-Au-SU8.

Estimated minimum detectable surface stress ~ 39 mN/m
IIT Bombay
30
ZnO Nanowire Embedded Strain Sensing

Cantilever
(a) Silicon dioxide grown on a silicon wafer (b) First encapsulation layer of SU-8 (c)
Patterned Cr/Au layer for contact. (d) Pattering of ZnO seed layer (e) Vertical
Growth of ZnO Nanowire (f) Bottom encapsulation layer of SU-8. (g) Pattering of
SU-8 anchor layer.
IIT Bombay
Low Youngs modulus of polymer and the high strain sensitivity of ZnO
nanowires, resulting out of the high surface area
Vertical ZnO nanowire grown using a low temperature (95 C) solution
based hydro-thermal method.
Measured Surface stress sensitivity: 128 ppm/nm.
Resonant Frquency: 30.4 KHz
Prasenjit Ray, V. Ramgopal Rao, ZnO Nanowire Embedded Strain Sensing Cantilever: A New
ultra-sensitive Technology Platform, To be published in J-MEMS, 2013
IIT Bombay
31

transduction
R
4
K
s
R
Eh
K
sensitivity
E
Gold
-strain gauge.
-K 2.
-Easy to
incorporate.
- Lower
sensitivity.
J. Thaysen et al.,
2002.
Poly Silicon
-Piezoresistive
-K > 20 (dependent
on material
optimization)
-Low Temperature
deposition methods
like HWCVD.
- Smaller SNR
IEEE J-MEMS, 2009
IIT Bombay
SU-8/nanoparticle (or nanowire)

Composites
-Piezoresistive
-K 90
-Spin coatable
- Compatible with
SU-8
overall stiffness
- Good sensitivity
- Suffers from
Reproducibility
IIT Bombay
OFET/TFT
Embedded
Cantilevers
-Piezoresistive
- K>100
- Spin coatable
- Lower stiffness
- Good Sensitivity
- Better
homogeniety
IEEE J-MEMS, 2011
IIT Bombay
IIT Bombay
Organic Transistor/TFT as a Strain Amplifier
Pentacene or ZnO
IIT Bombay
32
Polymer microcantilever with integrated OFET

[B] Design and Fabrication of CantiFET
6
5
Geometrical details of CantiFET
Parameter
(A)
Value
1. Cantilever length
340 m
2. Cantilever width
170 m
3. Cantilever overall thickness
1.9 m
4. Die area
Reference and
measurement
cantilevers
4 mm X 4 mm
D
Layer details of CantiFET

Layer No
Material
Thickness
1. Cantilever first layer
SU-8
1 m
2. Gate
Cr/Au
5nm/ 80 nm
3. Gate Dielectric
SU-8
900 nm
4. Source/ Drain
Cr/Au
5nm/ 80 nm
Pentacene
40-50 nm
5 .Organic semiconductor
(B)
Drain Pentacene Source

Gate Dielectric SU-8
Gate
Structural SU-8
(A) Planar and (B) Cross sectional schematic of CantiFET device
IIT Bombay

6
Device designs
6
Objective : To understand the anisotropic
nature of strain sensitivity
of pentacene
Current direction parallel to strain
Current direction perpendicular to strain
Current direction both parallel and perpendicular to

strain
Current direction at 450 angle to the strain
IIT Bombay
33

6
Process flow
7
Concept
Source, drain and gate
contact pads open on
top side through OFET
on the bottom side
Sacrificial layer
SU-8 2002 structural layer
Source Drain contact of Cr/Au
Contact Pad and Gate

electrode of Cr/Au
Thick SU8 pattering as anchor layer
Gate dielectric
Release of the device

from the silicon
IIT Bombay
Organic CantiFETs realized at IIT Bombay
V.Seena et al., IEEE/ASME Journal of MEMS (J-MEMS) , April 2012
IIT Bombay
34
Polymer microcantilever with an integrated OFET

6
9
CantiFET Deflection Characterization

IIT Bombay

[Characterization of CantiFET
7
Average strain , on pentacene layer 0in a rectangular microcantilever,
Lp
1
L Z nr k Z
2L
EI
L : Beam length
Lp : length of strain sensitive layer
Znr : distance of strain sensitive
layer from neutral axis
Z : the vertical deflection
k : the stiffness of the cantilever given by,
E : Youngs modulus
I : the moment of inertia.
3EI
L3
For CantiFET structure,

Lp = L, and Znr = h (thickness of
cantilever) 3h Z
4 L3
The sensitivity, [(I/I)/nm]:15.6 ppm for 1 nm of deflection.
V.Seena et al., IEEE/ASME Journal of MEMS (J-MEMS) , April 2012
IIT Bombay
35

Characterization of CantiFET
1/f noise characterization
7
1
Noise spectral density showed a 1/f 1.72 dependence

Drain current noise level at Vgs= Vds = -5V : 0.64 pA/Hz
Min. surface stress sensitivity: 0.17 mN/m

IIT Bombay
Al- Doped ZnO thin-film transistor embedded micro-cantilever

as a piezoresistive sensor
(a) Sacrificial layer (b) SU-8 2002 structural layer (c) Contact Pad and
Gate electrode of Cr/Au (d) Gate dielectric (e) Source Drain contact of
Cr/Au (f) Thick SU8 pattering as anchor layer (g) Release of the device
from the silicon wafer
RF sputter deposit a 50 nm AZO thin film
IIT Bombay
36
ZnO TFT on a Cantilever as a Strain Amplifier
Channel Semiconductor:
Al doped ZnO
ZnO
IIT Bombay
Measured surface stress

Sensitivity: 116 ppm/nm
of deflection
Prasenjit Ray, V.Ramgopal Rao,
Al- Doped ZnO thin-film transistor
embedded micro-cantilever as a
piezoresistive sensor,
accepted, APL, 2013
IIT Bombay
37

transduction
R
4
K
s
R
Eh
K
sensitivity
E
Gold
-strain gauge.
-K 2.
-Easy to
incorporate.
- Lower
sensitivity.
J. Thaysen et al.,
2002.
Poly Silicon
-Piezoresistive
-K > 20 (dependent
on material
optimization)
-Low Temperature
deposition methods
like HWCVD.
- Smaller SNR
IEEE J-MEMS, 2009
IIT Bombay
-Piezoresistive
-K 90
-Spin coatable
- Compatible with
SU-8
overall stiffness
- Good sensitivity
- Suffers from
Reproducibility
IIT Bombay
OFET/TFT
Embedded
Cantilevers
-Piezoresistive
- K>100
- Spin coatable
- Lower stiffness
- Good Sensitivity
- Better
homogeniety
IEEE J-MEMS, 2011
IIT Bombay
IIT Bombay
Cantilever Systems for

Cardiac Diagnostics
Cantilever Platform: Low cost, Highly
Sensitive, Field Deployable
Bio-functionalization
System Level Integration
IIT Bombay
38
Cantilever Systems for

Cardiac Diagnostics
IIT Bombay
Selective Immobilization Surface

Treatment
Immobilization chamber
IIT Bombay
39
SU-8 chemical structure: Effect of Ammonia Treatment in

HWCVD
(a) before ammonia treatment
(b) after treatment
By cleaving the CO bond of the epoxy group, an amino group can

get attached to one of the carbon atoms (verified with XPS)
M.Joshi et al., Biosensors and Bioelectronics, vol. 22, no.11,pp. 2429-2435, May 2007
IIT Bombay
Antibody Immobilization
Cantilevers (Dry)
on
Silicon
Nitride
and
SU-8
Surface modification: Top surface of silicon nitride and SU-8

cantilever modified in Hot Wire CVD setup (Dry)
Linker attachment- Dip in 1% aqueous solution of homo-bifunctional
agent (glutaraldehyde) for 30 minutes
Antibody immobilization- Incubation of Human Immunoglobulin
(HIgG) for one hour
Blocking of non-specific binding sites- Blocking of unsaturated
aldehyde sites and non-specific adsorption sites by dipping in BSA for
one hour
Identification of grafted antibody layer- Incubation of FITC tagged
goat anti HIgG for 1 hour
IIT Bombay
40
Process steps in Silanization and Antibody Immobilization on

SiO2 surface
IIT Bombay
Steps in Antibody Immobilization

Silanization
(grafting of silane layer)
BSA treatment **
Linker attachment (Glutaraldehyde)
Rinsing with PBS

Grafting Antibody Layer
(HIgG/anti-Mb)
Rinsing with PBS
Antigen (anti HIgG/Mb) binding
Rinsing with PBS
[HIgG]: 0.1 mg/ml; [anti-HIgG]: 0.05 mg/ml

Rinsing with PBS**
[anti-Mb]: 0.5 mg/ml; [Mb]: 0.5 mg/ml

IIT Bombay
41
ANTIBODY IMMOBILIZATION RESULTS
SiO2
a)
Si3N4
b)
SU-8
Micrograph of silanized surface

patterned on silicon and treated with
HIgG followed by FITC tagged goat
anti-HIgG
a) Micrograph of silanized SU-8 cantilever

treated with HIgG followed by FITC tagged
goat anti-HIgG
b) Unmodified SU-8 surface showing self
fluroscence property
IIT Bombay
SU-8/Carbon black/ SU-8 cantilevers
Before Antibody Immobilization
After Antibody Immobilization

IIT Bombay
42
Antibody Immobilized SU-8/SiN-poly-SiN Cantilevers

Using Dry silanization protocol involving HWCVD
Fluorescence microscope images of FITC tagged antiHIgG

antibodies immobilized on a nitride/poly/nitride cantilever
bio-functionalized by the process of dissociated ammonia
treatment
SU-8 with immobilization after the

HWCVD surface treatment
M. Joshi et al., Applied Surface Science, Vol.253,No.6, pp.3127-3132, January, 2007

IIT Bombay
Cantilever Systems
IIT Bombay
43
Cantilever Systems
IIT Bombay
Liquid Cell Module

create a reaction chamber
environment for cantilever
sensors such that sensing
time and SNR can be
reduced along with the
miniaturization of overall
system.
we have developed a liquid
cell for oxide/poly/nitride
and SU-8 cantilevers: using
PDMS
IIT Bombay
44
Fabrication Flow of PDMS

Liquid Cell
IIT Bombay
PDMS Liquid Cell

Specifications:
Base material: Poly-dimethyl-siloxane (PDMS)

elastomer
Fabrication: Simple MEMS
fabrication processes
(optical Lithography,
Plasma treatment, etc.)
Volume: 10-20 L
Advantages: Biocompatible, easily

patternable, surfacemodification easy,
transparent
IIT Bombay
45
Integration of the Cantilever with

the Liquid Cell
SiO2 cantilever-die:
1. Plasma treatment (50W, 30 secs.) of the oxide
surface and the liquid cell surface (surfaces to be
adhered)
2. Heat treatment at 800 C
On SU-8 cantilever-die:
1. Applying semi-cured PDMS on both the surfaces
(SU-8 and liquid cell)
2. Heat treatment at 800 C
IIT Bombay
Cantilever-Liquid Cell Integration:

Selective Immobilization
Top View
IIT Bombay
46
Cantilever+Flow Cell
Cantilever Characterization Set-up

Explosive
Vapor
Generato
r
Gas Outlet
Key Features:
R/R Measurement
Circuitry
(Wheatstone
Bridge)
433MHz RF
Transceiver
16-bit
Microcontroller
Power
Management
24-bit
ADC
(Delta
Sigma)
LCD
Inside the Wireless Cantilever

Characterization System.
Specifications:
Range of R: 40K to 1M
Sensitivity: 0.7mV/ppm
Power supply: 12V batteries
Supply current: <100mA
Reliable R measurement down to 2

ppm
Half/Full bridge configuration of
cantilevers
Compensation for R mismatch
Precision performance
Graphic LCD and in-built signal
generator (version 2)
High resolution acquisition using 24-bit
ADC (version 2)
Adjustable gain and sensitivity
Easy calibration
Rechargeable battery operated system
Low cost
Sudip Nag et al., "An Ultra-sensitive R/R Measurement System for Biochemical Sensors using Piezoresistive
Micro-Cantilevers", 31st Annual International Conference of the IEEE Engineering in Medicine and Biology
Society (EMBC'09), Minneapolis, Minnesota, USA, 2nd - 6th September, 2009
IIT Bombay
Cantilever Characterization System

Reference
Cantilever
(piezoresistor R)
Voltage Reference
R
Buffer
Programmable Gain
Amplifier
24-bit ADC
Data Out
(To Microcontroller)
Measuring Cantilever
(piezoresistor
RR)
Wheatstone Bridge based R/R measurement system

Neena et al., Current Excitation Method for R Measurement in Piezo-Resistive Sensors
with a 0.3-ppm Resolution IEEE Transactions on Instrumentation & Measurement,
March 2012
Neena et al. Piezoresistive 6-MNA Coated Microcantilevers with Signal Conditioning Circuits
for Electronic Nose Applications, ASSCC, 2012
IIT Bombay
47
The Best reported Cantilever Characterization

Till date: IITB
IIT Bombay
Specifications of the Cantilever

Characterization System
Range of R
Range of R
Sensitivity *
Resolution*
Sampling Time
Actuating signal
Power Supply
PCB Size
:
:
:
:
:
:
:
:
1K to 2M
0.3 ppm to 2000 ppm
~1.2mV/ppm
~2ppm
0.25 seconds
DC, 1.5V
+3V DC, 11mA (with RF)
33mm 17mm 15mm
Neena et al., Current Excitation Method for R Measurement in Piezo-Resistive Sensors

ith a 0.3-ppm Resolution IEEE Transactions on Instrumentation & Measurement, March 2012
Neena et al. Piezoresistive 6-MNA Coated Microcantilevers with Signal Conditioning Circuits
for Electronic Nose Applications, ASSCC, 2012
IIT Bombay
48
Bio-ICAS
Photo of SC_IITB_2
IIT Bombay
Bio-ICAS, Recent Measurement Results of INA in

SC_IITB_2
DC current=5.5 A
Post-layout
simulation
Measurement
19.98 dB
19.52dB
115 dB
107dB
up to 40mV
(pp)
up to 40mV (pp)
Input-referred voltage noise

density (with chopper)
88nV/Hz at
5Hz
50nV/Hz at
5Hz
Input-referred voltage noise

density (without chopper)
2V/Hz at 5Hz
Input common-mode voltage

range
0.6 to1.2V
0.7 to1.2V
Linearity (w.r.t. common-mode

input voltage)
+/- 1.6%
Linearity (w.r.t. diff. input voltage)
+/- 1.5%
Specification
Voltage Gain
CMRR
Input Diff. Voltage Range
Optimal design
for ultra lowpower
consumption in
0.18 um CMOS
process.
At least 50%
power reduction
maintaining high
CMRR and low
input noise,
compared to
latest reported
designs in higher
technology
nodes. IIT Bombay
49
Exploratory Sketches - iSens
IIT Bombay
CAD Packaging of Components
IIT Bombay
50
A polymer composite cantilever based iSens Prototype

for cardiac Diagnostics
IIT Bombay
Ver-2 for Hospital Trials:

iSens Working prototype built jointly with NanoSniff Technologies Pvt. Ltd.
IIT Bombay
51
Cantilever Characterization with antibodyantigen interactions
Myoglobin
Detection
PBS
IIT Bombay
R Experiments ( Rf Ri )
Myoglobin Anti Myoglobin
IIT Bombay
52
R Experiment using FABP Anti FABP
IIT Bombay
Only FABP ( No Anti - FABP )
IIT Bombay
53
R Experiment using spiked serum ( with FABP )
IIT Bombay
Proposed Technology
iSens technology has the following pros &
cons
Benefits: Simple procedure, low cost, fast
response
Possible to integrate with CMOS technologies
Disadvantages: Unproven new technology
The system should be adaptable to new

international standards for cardiac
diagnostics
IIT Bombay
54
Explosive Detection
Technology Enables for Web enabled Cardiac
monitoring
IIT Bombay
Explosive DetectionChallenges ..1
Important factors for analysis and detection:

Specific Functional Group
Elemental Composition
Explosives under purview

TNT (2,4,6-TriNitroToluene)
RDX (hexahydro-1,3,5-trinitro-1,3,5-triazine)
PETN (PentaErythritol TetraNitrate)
IIT Bombay
55
Explosive DetectionChallenges ..2

Popular
Name
Chemical
Formula
Decomposition
Temp. (oC)
Molecular
Mass (g/mol)
Density at
20C (g/cm3)
Vapor
Pressure
at 25oC (torr)
TNT
C7H5N3O6
240
227.13
1.654
~ 6.0 x 10-6
RDX
C3H6N6O6
170
222.12
1.820
~ 5.0 x 10-9
PETN
C5H8N12O4
190
316.14
1.773
~ 1.5 x 10-8
Currently available sensor systems suffer from several problems, viz. cost, size,
sensitivity, selectivity
IIT Bombay
Explosive Detection: Challenges ..3

Chemical Composition
- Diversity in chemical composition.

- High Nitrogen density is not unique to explosives.
Plastics like Melamine, Polyurethane and Nylon too
have comparable nitrogen densities.
Very low vapour pressures: TNT (13 ppbv), RDX

(0.0084 ppbv) at 300 K.
Deliberate Concealment: Shape can be easily changed

by moulding techniques; densities too are variable.
IIT Bombay
Dual Degree 1st Stage
56
Different Approaches: IIT-B

Introduction
The Challenges in Explosive Detection
Current Worldwide status
IIT-B Explosive Detection Approach based on
Cantilever Deflection
Deflagration (jointly with Prof. S.Mukherji, Bio-school, IIT-B)
Organic Sensors (OFETs)
Florescence Quenching Prof. Anil Kumar, Chemistry, IIT-B
Pattern Recognition
Surface Plasmon Resonance/ Evanescent wave based optical
detection (Prof. S.Mukherji, Bio-school, IIT-B)
Orthogonality in package for reduced false positives

IIT Bombay
Cantilever based Explosive Detection @

IIT Bombay
Surface coatings
(a) 4-mercaptobenzoic acid
(4-MBA)
(b) Fluoroalcohol
polysiloxane polymer
(SXFA)
(c) Porphyrin
coating on cantilevers
(d) 6-Mercaptonicotinic Acid
[6- MNA]
(e) Other proprietary coatings
Electrical Transduction
IIT Bombay
57
MEMS Pre-concentrator
IIT Bombay
Microcantilever Experimental Setup for

explosive vapor detection
Schematic of the experimental
set up for explosive experiments
Experimental set up
Vapor generator with an

MFC and 3 way valves for
controlling Nitrogen and
explosive gases
Signal conditioning
circuit and a PTFE gas
flow cell containing
cantilever.
Vapor Generator
developed in TBRL
Data acquisition
IIT Bombay
58
Functionalization of Polymer Microcantilevers

for Explosive Detection
Selective coating for Explosives
4-MBA
SXFA
Sputtering of 5nm of Ti and
SXFA in Chloroform is applied
30nm of Au.
selectively on the cantilevers
Cantilevers are dipped in 6mM
solution of 4 -MBA* for 24 hours
Cant#
f (kHz) after Ti/AU

coating
f (kHz) after 4-MBA
100
79.5
Curvature of the
Cantilever after 4-MBA
coating
IIT Bombay
Polymer nanocomposite microcantilever sensor

(a)
(b)
1 2mm to 6mm
conversion
(3) Incorporation of smaller PTFE gas flow cell 1
for microcantilevers
8
Nozzle:
10 mm diameter
PTFE flow cell
Faster response with smaller flow cell
(b) Effect of nitrogen flow rate
1/31/2013
IIT Bombay
59
IIT Bombay
Air Flush
IIT Bombay
60
Piezo-resistive detection of explosives with

composite polymer microcantilevers
RDX & TNT: ppb level of detection routinely possible with these
micro-cantilever systems now !
IIT Bombay
Flow rate from MFC

Temperature
Duration of dry
N2 purging before
starting the
experiment
Functionalization
IIT Bombay
61
Flow rate from

MFC
Temperature
Duration of dry
N2 purging
before starting
the experiment
Functionalization
IIT Bombay
Flow rate from MFC

Temperature
Duration of dry
N2 purging before
starting the
experiment
Functionalization
IIT Bombay
62
Microcantilever Response to test samples

A: Benzophenone
B: Diphenyl Acetic Acid
C: TNT
D: Dihydrocholestrol
E: 3,4-Dimethoxy-2,5dimethyl ester of thiophene
F: diol diester of thiophene
G: m-Dinitrobenzene
H: 1-Chloro-2,4dinitrobenzene
I: 3,5-dinitrobenzoic acid
IIT Bombay
Microcantilever sensor for explosive vapor

detection
Experimental set up
Vapor generator
Flow cell integrated with the

Cantilever PCB.
Microcantilever PCB connected to a

signal conditioning circuit
6 ppt of RDX on 4-MBA coated
cantilevers creates a surface stress of

roughly 30 mN/m
0.36 mV/ppb of TNT in our

poly.comp. Cantilevers highest
reported
IIT Bombay
63
Explosive Detector Prototype for RDX/TNT developed

@ IIT Bombay
Seena et al., IOP Nanotechnology , 22 (2011) 295501

IIT Bombay
IIT Bombay
64
IIT Bombay
HEMRL test report for the Cantilever sensors developed at IIT Bombay
D = Detected; ND = Not Detected
S No
Composition
HMX
NG (Nitroglycerine)
NC (Nitrocellulose)
C-4
RDX
PEK
LTPE
TNT
Composition B
Tetryl
Prima Cord
Sheet Explosive
PETN
ANFO
Ammonium Nitrate
SEMTEX
TATP
EGDN
KClO4
KClO3
PBX
Cantilever based systsem

with proprietary surface
coatings
FIDO (Response)
Cantilever based Flourescence based

2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
D
D
ND
D
D
D
D
D
D
D
D
D
D
ND
D
D
D
D
D
D
D
D
D
D
ND
D
D
D
D
D
D
D
D
D
D
D
D
ND
ND
ND
ND
NDIIT Bombay
65
E-Dog (s) to Sniff out Explosives
An ultra-sensitive
(parts-per-billion
level)
nano-electromechanical
sensor
A rechargeable
Li-Po battery
Wireless
Transmission
Module
A real dogs nose 100 to 10 Million times more sensitive than humans. In
laboratory tests dogs were able to detect 1 to 2 parts billion routinely and in some
cases 500 parts per trillion, below the detection limit of any available equipment today.
IIT Bombay
Approaches to address
selectivity
Selectivity through coatings
Antibodies for explosives !!
Cantilever Arrays
Orthogonality in package
Photo-thermal cantilever response
with Pyroelectric materials
IIT Bombay
66
Microcantilever sensor for explosive vapor

detection
Explosive detection- further approches
Use of dehumidification technique at the inlet of the sensor unit.
eg. A zeolite membrane
Functionalizing microcantilevers using molecules having the Host-Guest
properties
1. Calixerines (A wide class of cyclic oligomers)
Aromatic rings constitute cup shaped cavity.
Deposited or immobilized onto solid surfaces.
Inherit appropriate pre-organization of the host molecule,
since the calixarene macrocycle is shaped like a
conical basket, where it possesses a lower rim
and an upper rim

2. Metallated Porphyrins
Microcantilever arrays with different coatings on individual cantilevers and
perform a pattern recognition.
Bringing orthogonality to sensing.
IIT Bombay
Miniaturized wireless explosive detector
Packaged flow cell for explosive detection
PCBs for wireless explosive detector
Fully automated and stand off detection
Packaging: CMET PUNEE
IIT Bombay
67
IIT Bombay
Piezoelectric Cantilevers
Transduction applications
Energy Scavenging
Piezoelectric Photo-patternable Polymer

Composites
- ZnO
- Various multiferroic materials
Multiferroic materials
Self
powered
wireless Sensor
Networks
Mrunal A. K et al., "Electrical Actuation and Readout in a Nano-electro-mechanical Resonator

based on a Laterally Suspended Zinc Oxide Nanowire ", Nanotechnology, Vol. 23 (2012) 025501
Prashanthi et al., A Novel Photo-Plastic Piezoelectric Nanocomposite for MEMS Applications,
IEEE/ASME Journal of MEMS(J-MEMS), April 2012
Prashanthi et al"Local piezoelectric response of ZnO nanoparticles embedded in a
photosensitive polymer", Physica Status Solidi RRL 6, No. 2, 77-79 (2012)
M. Kandpal et al., Photopatternable nano-composite (SU-8/ZnO) thin films for piezo-electric
applications, Appl. Phys. Lett. 101, 104102 (2012)
IIT Bombay
68
Piezo-electric SU8 polymer composite

cantilevers out of ZnO nanoparticles
Prashanthi et al., IEEE/ASME Journal of MEMS (J-MEMS), April, 2012

Manoj et al., Applied Physics Letters, September 2012
IIT Bombay
Piezo-electric SU8 polymer composite cantilevers

out of ZnO nanoparticles contd
Prashanthi et al., Physica Status

Solidi RRL, Feb 2012
Prashanthi et al., IEEE/ASME Journal
of MEMS (J-MEMS) , April 2012
Manoj et al., Applied Physics Letters,
Sept 2012
IIT Bombay
69
ZnO-SU8 Polymer Composite Cantilevers for

Energy Scavenging applications
Piezoresponse (pm)
Response recorded by placing the

cantilever on a speaker
250
200
150
100
50
(b)
0
0
4
6 IIT Bombay
8
10
Voltage (V)
Development of Novel Multiferroic materials

for MEMS Applications
Coexistence of magnetic & ferroelectric
ordering in a certain range of temperature
Presence of coupling between two order
parameters (M-E effect) offers an
additional degree of freedom in device
designing
Tremendous application potential in the
area of MEMS and non-volatile memories
Jointly with Prof. V.R.Palkar & Dr. Prashanthi K., IIT Bombay
IIT Bombay
70
Material studies
1. Inducing ferromagnetism in antiferromagnetic BiFeO3 without disturbing its
ferroelectricity by means of doping at Bi sites (Bi 0.6La0.1Dy0.3FeO3)
2. Removal of La from Dy modified BFO system (bulk and thin films) leads to
reduction in the leakage current and improvement in ferroelectric
properties
enhancement in the magnetic properties by one order of magnitude
3. Magnetic anisotropy develops non-linearly with the thickness of the films
correlated to internal stress developed during growth process
4. Effect of permanent magnetic field and electric field on the dielectric

response of the BDFO thin films at GHz frequencies
The coupling between two phenomenon has been observed at
microwave frequencies
1. V.R.Palkar et al., Journal of Material Research, Vol.22, 2068-2073 (2007)
2. K Prashanthi et al., Solid State Communications, Vol.149, 188-191 (2009)
3. V.R.Palkar et al., Journal of Physics D: Applied Physics, Vol.41, 045003 (2008)
4. V.R. Palkar et al., Journal of Material Research, Vol.22, 2179-2184 (2007)
IIT Bombay
Co-existence and coupling of Ferroelectricity and

Magnetism at Macroscopic as well as at Microscopic Level
Very small magneticfield can induce

large electric
polarization
Coexistance of Ferroelectric
and Magnetic Properties at
Macro as well as Microscopic
Level
We are not aware of a

prior observation of an
electric-field-induced
magnetic hysteresis in
the magnetic domain
structure
Coupling Between Ferroelectric and

Magnetic Properties at Macro as well as
Microscopic Level
V. R. Palkar et al., Applied Physics Letters, Vol. 93, 132906 (2008)
IIT Bombay
71
MEMS Devices Using a Novel Multiferroic BDFO System

Bulk
Micromachining
Two-mask process
with contacts
Si<100> wafer
Step 2: BDFO deposition by

PLD
Step 3: Patterning of BDFO
using lithography and BDFO
etching
Step 4: Etching of Si to
release the cantilever
IIT Bombay
Microfabrication Process for BDFO cantilevers with gold as

top electrode
Step 1: RCA cleaned Si
wafer
Step 2: Deposition
of BDFO by PLD
Step 3: Patterning of
BDFO using lithography
(mask1) followed by
etching of BDFO in 5:1
BHF
Step 5: Patterning of
Cr/Au using
lithography (mask 2)
followed by Au/Cr
etching
Step 6: Bulk etching of
silicon using TMAH to
release the cantilevers
Silicon
BDFO
Cr
Step 4: Deposition
of Cr/Au layers by
sputtering
Gold
40um
200-500um
IIT Bombay
72
IIT Bombay
Dr. Prashanthi & Prof. Palkar
IIT Bombay
73
First Generation Handheld Device for detection

of TNT and RDX at Room Temperature
SIDE VIEW
Sub ppt sensitivity

Highly selective
10 prototypes
Available for field trials
TOP VIEW
Anilkumar, IITB
&
BIGTEC Labs
IIT Bombay
3-D Wireless Networked Sensor

Systems
Sensors for Security & Environmental Applications

- Explosive Detection
monitoring
IIT Bombay
74
Silicon Locket
Low power ASIC based Fabricated & working fine

Low cost SU8 Accelerometer Motion artifacts
Undergoing field trials in hospitals
TCS-Industry partner
Lead investigator: Prof. D.K.Sharma & colleagues from Bio-school

IIT Bombay
A miniaturized 3 channel 12 lead

ECG unit
IIT Bombay
75
A modular 3 channel 12
lead ECG unit
Lead investigator: Prof. D.K.Sharma

IIT Bombay
ASIC for Silicon Locket
IIT Bombay
76
Future Plans for SiLoc ASIC
IIT Bombay
Motion Artifacts
IIT Bombay
77
First demonstration of polymer

based Accelerometer @IIT-B
20m
Optical and SEM micrographs of a structure with a seismic mass

supported by four beams attached to an anchoring region.
IIT Bombay
Low cost polymer accelerometers for

integration with the ECG electrodes
IIT Bombay
78
Polymer Composite Microaccelerometer

First time demonstration of Piezoresistive polymer MEMS
accelerometer.
Low temperature processing..
Simpler Process Flow
Improvement in sensitivity due to the lower Youngs modulus
of structural Polymer.
Smarter designs aiming for any type of application or
performance improvement can be easily implemented due to
the micromachining potential of the polymer using standard
UV lithography, e-beam lithography, laser, X-Ray,
Microsteriolithography etc.
IIT Bombay 157
Seena et al., Unpublished
IIT Bombay
79
Characterization of Polymer Composite

Microaccelerometer
using Polytek Laser Doppler vibrometer
Displacement =4.13nm
f = 13.9 kHz
Resonance Frequency
IIT Bombay

400
reldisp
Linear Fit of Data2_reldisp
Slope = 25
reldisp
Linear Fit of Data2_reldisp
350
Displacement of proof mass (nm)
Displacement of proof mass (nm)
Slope = 47.49
300
250
200
150
100
50
0
0
0.05
0.10
0.15
0.20
0.25
Acceleration (g)
Relative displacement of proof mass Vs

Input acceleration, device response at
f resonant = 10.01 kHz for a<0.3g
Acceleration (g)
Relative displacement of proof mass Vs Input

acceleration, device response at
f resonant = 10.01 kHz for a>1g
Seena et al., "A Novel SU-8 Composite Piezo-resistive MEMS Accelerometer to be

published
IIT Bombay 160
80
12 lead heart monitor with a

thermal printer
The unit is battery operated.
It has a user interface with a pictorial
guide for attachment for for any one
of the 12 standard ECG leads.
This allows a minimally trained person
to take an ECG, which has obvious
advantages in a rural setting.
ECGs can be collected by a eld
operator with printouts and then
examined at the hospital by a doctor.
This is a portable ECG unit with a printer, which can be easily

carried by a doctor in a briefcase
IIT Bombay
Realization of handheld Polymer

micro-cantilever Sensor Systems
Polymer Cantilever technology highly
suitable for low-cost disposable
Identify an application
health-care applications
The high sensitivity offered by this
technology helps build sensors for
cardiac marker detection & for
Develop the technology
detecting explosives in the vapor phase
down to the low ppt level
Simple instrumentation & low cost
Product Realization
(piezo-resistive measurements) enable
development of wire-less sensor
networks for environmental/ security
applications
Low Temperature Processes (max 100
Commercialization
deg C) Integration with CMOS Post processing for CMOS
IIT Bombay
81
Angel Funded by Priaas investments, R&D Funding by ICICI

SPREAD
16 people currently employed in NanoSniff including 5
Ph.D.s
Three Products: OmniCant TM , Explosive Detector, iSens
OmniCant launched in August 2012
Setting up of manufacturing facilities
sales@nanosniff.com
IIT Bombay
IIT Bombay
82
IIT Bombay
Ver-2 for Hospital Trials:

iSens Working prototype built jointly with NanoSniff Technologies Pvt. Ltd.
IIT Bombay
83
Technology Transfers from CEN, IIT Bombay

Beagle Bigtech Industries, Bangalore
(Prof. Anilkumar, Chemistry)
Surface Plasmon Resonance
(Prof. S.Mukherji, DBSE)
A Detection system for E.coli and other waterborne bacteria
(Prof. S.Mukherji, DBSE)
Ultra Low voltage Devices & High Voltage I/O Devices

(Prof. V.Ramgopal Rao, EE)
Silicon Locket (Prof. D.K.Sharma, EE)
IIT Bombay
Prototypes/Products in the CEN@IIT-B
Portable ECG Monitor
Silicon Locket
D.K.Sharma & team
D.K.Sharma & team
Explosive Detector
PolySense Aqua
BEAGLE
Anilkumar
Portable SPR System
A.Q.Contractor
S.Mukherji
IIT Bombay
Explosive wireless sensor node
84
Thank You
IIT Bombay
Approaches to address
selectivity
Selectivity through coatings
Antibodies for explosives !!
Cantilever Arrays
Orthogonality in package
Photo-thermal cantilever response
with Pyroelectric materials
IIT Bombay
85
More than Moore Era of CMOS Scaling

Spintronics,
Molecular
Electronics
Etc. s
Adapted from Evolution scenario for III-V/Ge devices on Si platform through (Takagi et al., ICSICT, 2010
pp.50-53, 2010)
IIT Bombay
Pentace/P3HT etc.
IIT Bombay
86
Organic Transistor Platform for Sensing

Applications
(a) Radiation sensing
A radiation study is carried out on OFETs to

see the effect of ionizing radiation
A P3HT based OFET is exposed to 60Co
radiation (1 krad/min) for different time span
Change in the characteristics of the OFETs are
observed after each radiation dose
A control sample is also characterized at the
same time to see the effect of degradation in
ambient
IIT Bombay
OFET Sensor Degradation

with Radiation
H. N. Raval, et al., Determining Ionizing Radiation using Sensors Based on Organic Semiconducting
Material, Applied Physics Letters, Feb 2009
IIT Bombay
87
Off-current and Current

Ratio
IIT Bombay
OFET array Based Personal Dosimeter

Applied for patent
PCT Application
filed
US patent is being
filed
Working with BARC
Device
Details
OFF
curren
t (Ioff)
(A)
1.77e-8
ON
current
(Ion)
(A)
1.98e-6
Mobilit
y
(cm2/V
s)
1.38e-3
Threshold
Voltage
(V)
-6.48
Ion/Ioff
Single
Radiation
Dose
(Gy)
0
OFET
10
2.34e-7
2.88e-6
7.83e-4
7.75
12.3
Sensor
30
3.48e-7
3.10e-6
7.13e-4
11.01
8.89
3- OFETs
Connected
In Parallel
0
10
1.4e-7
7.56e-7
6.36e-6
7.67e-6
1.38e-3
7.68e-4
-5.63
5.96
45.3
10.1
30
1.12e-6
8.45e-6
7.41e-4
8.35
8.42
H.N.Raval, V.Ramgopal Rao, IEEE EDL, Accepted, 2010,
112
IIT Bombay
H.N.Raval et al., IEEE EDL, 2009, pp. 484 486.
88
(b) OFETs for Explosive Detection

a
-6
VGS= 0 to -20 V
Before Exposure
After Exposure
-10
Drain Current IDS (A)
Drain Current IDS (A)
-12
Before Exposure
After Exposure
-3
-6
-2
-4
-1
-2
-10
-20
-30
-40
Drain Voltage VDS (V)
R.S. Dudhe, et al. Appl. Phys. Lett., 93,

2008, 263306
R.S.Dudhe, et al.,
Sensors and
Actuators A: Physical, Vol. 148, 2010,
pp.158.
Sandeep G. Surya et al.,, ",, Sensors &
Actuators B: Chemical (Elsevier), 2012
VGS= 0 to -20 V
-4
-8
-5
0
0
-10
-20
-30
-40
Drain Voltage VDS(V)
IIT Bombay
OFET Passivation
Nitride passivation layers for polymer electronics

S.P. Tiwari et al., Organic FETs with Hot-wire CVD (HWCVD) Silicon Nitride as a Passivation and Gate
Dielectric Layer, Volume 516, Issue 5, Pages 770-772, Thin Solid Films, 2008
IIT Bombay
89
(c) OFETs for CO Sensing
To be published in
APL
IIT Bombay
IIT Bombay
90
CO Sensing with Polymer Composite Cantilevers
IEEE Trans. On Nanotechnology , July 2012
IIT Bombay
Some Research Directions
Circuit Design for Energy Scavenging applications (Sub 0.3 V operation)

Device-circuit co-design (o/p resistance issues in piezo-electric MEMS
devices and its impact for circuit design) (series-parallel connection of
MEMS piezoelectric devices)
Low frequency Vibration Energy Harvesting (Devices, circuits, analysis)
Modeling polymer composite piezo-electric cantilevers/Size/shape effects
Asymmetric immobilization for Cantilevers
Novel piezo-resistive platforms
Self powered ICs/Sensor systems
MEMS-CMOS co-design
MEMS-Organic electronics integration
Circuit design with organic electronics
OFET Sensors
Pattern recognition approaches/algorithms
Use of MEMS Switches to reduce CMOS Standby power/System level
modeling
Sensors for Agricultural applications (Precision farming)
Ultra low power Micro-pumps for air & liquid handling (sensor networks)
Other cantilever based sensors
IIT Bombay
91
B. K. Chakravarthy
Industrial Design Centre, IIT Bombay
Students/Post-docs:
Seena, Nitin Kale, Manoj Joshi, Sheetal Patil,
Prashanthi, Abhinav Prasad, Deepika Reddy, Dilip

Agarwal, Sudip Nag, Naveen Kadayinti, Neena,
Avil Fernandez, Sahir Gandhi, Gaurav Chatterjee,
Faculty Collaborators:
S.Mukherji (Immobilization), Dept. of Bio-Sciences & Engg.

D.K.Sharma (Instrumentation): Dept. of Electrical Engineering
Anilkumar (Surface coatings), Dept. of Chemistry

M.Shojaei (ASIC Design); Dept. of Electrical Engineering
P.R.Apte (Fabrication): Dept. of Electrical Engineering
C.P.Rao (Calixerines): Dept of Chemistry
M. Ravikanth (Porphyrins): Dept of Chemistry
Prita Pant (Nano-indentation): Dept. of Metallurgy & Mat.Sci.
V.R.Palkar (Multi-ferroics), Dept. of Electrical Engg.
B. K. Chakravarthy (Prototype-development) Industrial Design Centre
Amit Agarwal (Micro-fluidics), Dept. of Mechanical Engineering
T.Kundu (photo-thermal), Dept of Physics
IIT Bombay
Funding from NPSM, DIT,V.R.
NPMASS,
DST
Rao: rrao@ee.iitb.ac.in
Initial Explosive Detector Prototypes
IIT Bombay
92

Nano Micro

Hochgeladen von

Dokumentinformationen

Copyright

Verfügbare Formate

Dieses Dokument teilen

Dokument teilen oder einbetten

Freigabeoptionen

Stufen Sie dieses Dokument als nützlich ein?

Sind diese Inhalte unangemessen?

Copyright:

Verfügbare Formate

Nano Micro

Hochgeladen von

Copyright:

Verfügbare Formate

Nano/Micro-Electro-Mechanical-Sensor Systems

MICRO/NANO TECHNOLOGIES - AAA

accounts for only about 17% of total GDP

healthcare a major concern, rural health infrastructure hardly existent

line annually due to healthcare expenditure

Security- a major concern area for India

Energy Scavenging Technologies (Vibrations, microwave energy..)

Seena, Nitin Kale, Manoj Joshi, Sheetal Patil, Prashanthi, Abhinav

Prasad, Deepika Reddy, Dilip Agarwal, Sudip Nag, Naveen Kadayinti,

Nathawat , Yashwant, Sandeep Surya Goud, Mihir,

S.Mukherji (Immobilization), Dept. of Bio-Sciences & Engg.

Anilkumar (Surface coatings), Dept. of Chemistry

A Rs. 300 Crore National Nano-fabrication Facility @ IIT Bombay

CEN IIT Bombay

CEN IIT Bombay

CEN IIT Bombay

Multi Disciplinary nature of Activities in the CEN

Total number of IITB Faculty members using the CEN@IITB: 56

Nanoscale = High Ratio of Surface Area to Vol.

For example, 5 cubic centimeters about 1.7 cm per side of

M. Meyyappan, NASA Ames Res. Center

What really is Nanotechnology ?

More than Moore Era of CMOS Scaling

More than Moore Era in CMOS

M. B. Wolfgang et al., 2010, "More than Moore" White paper (Intel)

Explosive Detection/Other Environmental sensors

Technology Enablers for Web enabled Cardiac

iSens: A point of care system for Cardiac

Inexpensive, smart, rugged sensors that can be used

Damage to an area of heart muscle occurs due to

Molecular Markers: Issues

Temporal Variations of Markers

A: early release of myoglobin or CKMB isoforms after AMI;

Heart-type fatty acid binding protein

European Journal of Cardio-thoracic Surgery 19 (2001) 859-864

V.R. Rao: rrao@ee.iitb.ac.in

A Review on Cantilever Sensors

Surface stress changes detected of the order of 106N/m

In 1909, Stoney developed a theory to measure surface

Fundamental understanding still lacking on the origin of surface stress

What happens when reactions occur on

Binding of molecules to sensor surface

Source of Cantilever surface stress ..2

Thermodynamic analyses have suggested that a considerable number of

Resonant Frequency Changes

Bimetallic Cantilever tip deflection:

iSens Functional Architecture

Biosensor Array: Affinity

Polymer considered : SU-8

Inexpensive fabrication process & Ease in patterning

Polymer Microcantilevers -Piezoresistive

SU8/Poly-Si/SU8 Cantilevers for detecting

R/R (K/E) (4ss t )

SU-8 processing: simple and low cost

N.Kale et al., (IEEE/ASME) Journal of Microelectromechanical Systems (J-MEMS), Dec. 2006

Hot-Wire CVD Cluster Tool for Low-Temperature

Nitin S. Kale et al., (IEEE/ASME) Journal of Microelectromechanical Systems (J-MEMS), Volume

Hotwire CVD Polysilicon as

Calibration for glass substrate

Low-temp HWCVD piezo-poly for SU8/nitride

HWCVD Films for Polymer

Crystallinity (intensity of <111>

Grain size determined from

HWCVD Films for Polymer BioMEMS