MRF19125

Freescale Semiconductor
Technical Data
Document Number: MRF19125

Rev. 8, 10/2008
RF Power Field Effect Transistor
MRF19125R3
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ =
1300 mA, f = 1930 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes
8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels
Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz.
Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz
and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power 24 Watts Avg.
Power Gain 13.6 dB
Efficiency 22%
ACPR - 51 dB
IM3 - 37.0 dBc
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930 - 1990 MHz, 125 W, 26 V

LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465B - 03, STYLE 1

NI - 880
Table 1. Maximum Ratings

Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25C

Derate above 25C
PD
330
1.89
W
W/C
Storage Temperature Range
Tstg
- 65 to +150
Case Operating Temperature
TC
150
Operating Junction Temperature
TJ
200
Symbol
Value
Unit
RJC
0.53
C/W
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFET
Table 2. Thermal Characteristics

Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics

Test Conditions
Human Body Model
Machine Model
Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Class
2 (Minimum)
M3 (Minimum)
MRF19125R3
1
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)

Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
Vdc
Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
Adc
Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
10
Adc
gfs
Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 Adc)
VGS(th)
Vdc
Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 1300 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.185
0.21
Vdc
Crss
5.4
pF
Off Characteristics
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
ARCHIVE INFORMATION
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz)
Gps
12
13.5
dB
Drain Efficiency
f2 = 1932.5 MHz)
19
22
Intermodulation Distortion
f2 = 1932.5 MHz; IM3 measured over 1.2288 MHz Bandwidth at
f1 - 2.5 MHz and f2 +2.5 MHz)
IM3
- 37
- 35
dBc
Adjacent Channel Power Ratio

f2 = 1932.5 MHz; ACPR measured over 30 kHz Bandwidth at
f1 - 885 MHz and f2 +885 MHz)
ACPR
- 51
- 47
dBc
Input Return Loss

f2 = 1932.5 MHz)
IRL
- 13
-9
dB
1. Part is internally matched both on input and output.
ARCHIVE INFORMATION
On Characteristics
(continued)
MRF19125R3
2
RF Device Data
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)

Characteristic
Symbol
Min
Typ
Max
Unit
Two - Tone Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
Gps
13.5
dB
Two - Tone Drain Efficiency

35
Third Order Intermodulation Distortion

IMD
- 30
dBc
Input Return Loss

IRL
- 13
dB
P1dB
130
Pout, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Functional Tests (In Freescale Test Fixture)
MRF19125R3
RF Device Data
VBIAS
R3
B1
VSUPPLY
+
R2
C5
C4
C3
C7
C2
Z4
RF
INPUT
Z1
Z2
ARCHIVE INFORMATION
Z1, Z7
Z2
Z3
Z4
Z5
Z6
Z8
0.500
1.105
0.360
0.920
0.605
0.800
0.660
Z5
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
C8
C9
L1
C10
Z6
C11
C12
C13
C14
Z7
RF
OUTPUT
C6
DUT
x 0.084
x 0.084
x 0.895
x 0.048
x 1.195
x 0.084
x 0.095
Z8
Z3
C1
Board
PCB
0.030 Glass Teflon,

Keene GX - 0300 - 55 - 22, r = 2.55
Etched Circuit Boards
MRF19125 Rev. 5, CMR
Figure 1. MRF19125R3 Test Circuit Schematic

Table 5. MRF19125R3 Test Circuit Component Designations and Values
Designators
Description
B1
Short Ferrite Bead, Fair Rite #2743019447
C1
51 pF Chip Capacitor, ATC #100B510JCA500X
C2, C7
5.1 pF Chip Capacitors, ATC #100B5R1JCA500X
C3, C10
1000 pF Chip Capacitors, ATC #100B102JCA500X
C4, C11
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C5
0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050
C6
10 pF Chip Capacitor, ATC #100B100JCA500X
C8
10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394
C9, C12, C13, C14
22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
L1
1 Turn, #20 AWG, 0.100 ID
N1, N2
Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10
R1
1.0 k, 1/8 W Chip Resistor
R2
220 k, 1/8 W Chip Resistor
R3
10 , 1/8 W Chip Resistor
ARCHIVE INFORMATION
R1
MRF19125R3
4
RF Device Data
C7
C2
C8
C9
R3
R1
L1
B1
C11
C10
C12 C13 C14
C6
MRF19125 Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF19125R3 Test Circuit Component Layout
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C1
C3
CUT OUT
R2 C5 C4
MRF19125R3
RF Device Data
G ps
15
IM3
10
56
63
ACPR
70
1
60
17
7th Order
70
11
80
5
4
100
10
Pout, OUTPUT POWER (WATTS Avg.) NCDMA
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and

Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion

Products versus Output Power
IM3, THIRD ORDER

INTERMODULATION DISTORTION (dBc)
20
24
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
25
30
10
IRL
20
35
IDQ = 900 mA
40
20
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
18
1100 mA
IM3
16
45 1700 mA
1300 mA
G ps
12
10
100 150
30
1920 1930
1940
1950
1960
1970
1980
f, FREQUENCY (MHz)
Figure 5. Third Order Intermodulation

Distortion versus Output Power
Figure 6. 2-Carrier N-CDMA Broadband

Performance
38
56
27
IDQ = 1300 mA
f = 1960 MHz
G ps
12
48
40
32
24
P in
0
2
10
100
200
28
36
29
IMD
35
30
34
31
33
32
32
16
37
, DRAIN EFFICIENCY (%)
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
50
60
1990 2000
14
40
VDD = 26 Vdc
Pout = 24 Watts (Avg.)
IDQ = 1300 mA
ACPR
14
50 1500 mA
10
150
22
55
P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB)
23
5th Order
40
10
29
3rd Order
50
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
ARCHIVE INFORMATION
49
40
35
ARCHIVE INFORMATION
42
30
20
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB)
35
IM3 (dBc), ACPR (dBc)
25
41
20
IMD, INTERMODULATION DISTORTION (dBc)
28
VDD = 26 Vdc, IDQ = 1300 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
30
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
33
24
24.5
25
25.5
26
26.5
27
27.5
28
Pout, OUTPUT POWER (WATTS)
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
Figure 8. Two-Tone Intermodulation Distortion and

Drain Efficiency versus Drain Supply
MRF19125R3
6
RF Device Data
IDQ = 1700 mA
G ps , POWER GAIN (dB)
1500 mA
13.5
1300 mA
1100 mA
13
900 mA
12.5
VDD = 26 Vdc
f = 1960 MHz
4
100
10
35
10
30
15
IRL
25
20
VDD = 26 Vdc
Pout = 125 W (PEP)
IDQ = 1300 mA
20
15
150
25
IMD
30
Gps
10
1920 1930
1940
1950
1960
1970
1980
35
1990 2000
f, FREQUENCY (MHz)
Figure 9. Two-Tone Power Gain versus

Output Power
Figure 10. Two-Tone Broadband Performance
MTTF FACTOR (HOURS X AMPS2)
1010
ARCHIVE INFORMATION
12
40
25
3rd Order
30
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
35
40
5th Order
45
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
50
TJ, JUNCTION TEMPERATURE (C)
7th Order
55
100
1000
5000
Df, TONE SPACING (kHz)
Figure 11. Intermodulation Distortion Products

versus Two - Tone Tone Spacing
This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
ARCHIVE INFORMATION
14
IRL, INPUT RETURN LOSS (dB)

G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
MRF19125R3
RF Device Data
N - CDMA TEST SIGNAL

0
1.2288 MHz
Channel BW
10
20
IM3 @
1.2288 MHz
Integrated BW
30
+IM3 @
1.2288 MHz
Integrated BW
(dB)
40
50
60
70
ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
ARCHIVE INFORMATION
90
100
7.5
4.5
1.5
1.5
4.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
7.5
ARCHIVE INFORMATION
80
MRF19125R3
8
RF Device Data
f = 1930 MHz
Zload
f = 1990 MHz
f = 1990 MHz
Zsource
f = 1930 MHz
VDD = 26 V, IDQ = 1300 mA, Pout = 24 W (Avg.)

f
MHz
Zsource
Zload
1930
1.43 - j5.01
0.75 - j0.93
1960
1.51 - j4.88
0.71 - j0.89
1990
1.56 - j4.93
0.68 - j1.02
Zsource = Test circuit impedance as measured from

gate to ground.
Zload
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zo = 10
= Test circuit impedance as measured

from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
source
load
Figure 13. Series Equivalent Source and Load Impedance
MRF19125R3
RF Device Data
PACKAGE DIMENSIONS
G
4
2X
Q
bbb
T A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
(FLANGE)
3
bbb
D
T A
ARCHIVE INFORMATION
M
bbb
T A
ccc
T A
(INSULATOR)
ccc
T A
aaa
T A
B
S
(LID)
(LID)
M
(INSULATOR)
M
H
C
F
E
A
T
A
SEATING
PLANE
(FLANGE)
CASE 465B - 03
ISSUE D
NI - 880
MRF19125R3
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
ARCHIVE INFORMATION
MRF19125R3
10
RF Device Data
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Oct. 2008
Description
Data sheet revised to reflect part status change, p. 1, 4 - 5, including use of applicable overlay.
ARCHIVE INFORMATION
Data sheet archived. Part no longer manufactured.

Added Product Documentation and Revision History, p. 11
ARCHIVE INFORMATION
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
MRF19125R3
RF Device Data
11
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
Home Page:
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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF19125R3
Document Number: MRF19125
Rev. 8, 10/2008
12
RF Device Data

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Document Number: MRF19125

RF Power Field Effect Transistor

1930 - 1990 MHz, 125 W, 26 V

CASE 465B - 03, STYLE 1

Table 1. Maximum Ratings

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ TC = 25C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

N - Channel Enhancement - Mode Lateral MOSFET

Table 2. Thermal Characteristics

Table 3. ESD Protection Characteristics

Freescale Semiconductor, Inc., 2008. All rights reserved.

Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)

Gate - Source Leakage Current

Zero Gate Voltage Drain Leakage Current

Gate Threshold Voltage

Gate Quiescent Voltage

Drain - Source On - Voltage

Adjacent Channel Power Ratio

Input Return Loss

1. Part is internally matched both on input and output.

Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)

Two - Tone Common - Source Amplifier Power Gain

Two - Tone Drain Efficiency

Third Order Intermodulation Distortion

Input Return Loss

Pout, 1 dB Compression Point

Functional Tests (In Freescale Test Fixture)

0.030 Glass Teflon,

Figure 1. MRF19125R3 Test Circuit Schematic

Short Ferrite Bead, Fair Rite #2743019447

51 pF Chip Capacitor, ATC #100B510JCA500X

5.1 pF Chip Capacitors, ATC #100B5R1JCA500X

1000 pF Chip Capacitors, ATC #100B102JCA500X

0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS

0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050

10 pF Chip Capacitor, ATC #100B100JCA500X

10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394

C9, C12, C13, C14

22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394

1 Turn, #20 AWG, 0.100 ID

Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10

1.0 k, 1/8 W Chip Resistor

220 k, 1/8 W Chip Resistor

10 , 1/8 W Chip Resistor

Figure 2. MRF19125R3 Test Circuit Component Layout

Pout, OUTPUT POWER (WATTS Avg.) NCDMA

Pout, OUTPUT POWER (WATTS) PEP

Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and

Figure 4. Intermodulation Distortion

IM3, THIRD ORDER

Figure 5. Third Order Intermodulation

Figure 6. 2-Carrier N-CDMA Broadband

Pout, OUTPUT POWER (WATTS) PEP

P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB)

, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)

, DRAIN EFFICIENCY (%)

IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB)

IMD, INTERMODULATION DISTORTION (dBc)

IMD, INTERMODULATION DISTORTION (dBc)