Beruflich Dokumente
Kultur Dokumente
DE TI TANAT DE BARIU
IMPURIFICAT CONTROLAT
(Partea I-a)
SEMICONDUCTORS BASED ON
CONTROLLED DOPED BARI UM
TI TANATE (1st Part)
*
**
1. Introducere
1. Introduction
128
2. Prepararea probelor
2. Preparation of samples
129
No. comp.
1
2
3
4
5
6
7
8
9
10
11
12
130
1
2
3
4
5
6
Calcinations
T(C)
chamber fu rnace
1000C
1000C
1000C
1000C
1000C
900C
950C
1000C
1050C
1100C
1000C
1000C
1000C
10
1000C
11
1000C
12
1000C
No.
comp.
1370C
1370C
1370C
1370C
1370C
1350C
1350C
1350C
1350C
1350C
1350C
3. Microstructural characterization by
X-Ray diffractometry of obtained
materials by thermic treatments
4. Proprieti electrice
4. Electrical properties
131
a)
b)
c)
d)
Figura 1. Spectrele de difracie ale probelor din compoziiile 7, 10, 11, 12 calcinate la 1000C i sinterizate la 1330C
pe cuptor tunel: a) compoziia 7; b) compoziia 10; c) compoziia 11; d) compoziia 12
Figure1. Diffraction spectrums of 7, 10, 11, 12 samples calcined at 1000C and sintered at 1330C in tunnel furnace:
a) composition no. 7; b) composition no. 10; c) composition no. 11; d) composition no. 12
Fia de msurtori nr. 1
The list of measurements no. 1
No.comp.
1.
2.
3.
4.
5.
1.
2.
3.
4.
5.
1.
2.
3.
4.
5.
132
T calcinationC
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
1000 C
T sintering C
1300C tunnel furnace
1300C tunnel furnace
1300C tunnel furnace
1300C tunnel furnace
1300C tunnel furnace
1330C chamber furnace
1330C chamber furnace
1330C chamber furnace
1330C chamber furnace
1330C chamber furnace
1370C chamber furnace
1370C chamber furnace
1370C chamber furnace
1370C chamber furnace
1370C chamber furnace
Rc.c.
>20 M
>20 M
>20 M
>20 M
>20 M
3.80 M
>20 M
>20 M
>20 M
>20 M
3.02 M
14.72 M
>20 M
>20 M
>20 M
Rc.a.
49.6 k
49.8 k
50.1 k
49.8 k
50.3 k
43.3 k
48.9 k
60.1 k
48.9 k
53.5 k
48.5 k
46.9 k
72.3 k
113.2 k
112.0 k
C(nf)
5.30
4.90
5.72
6.30
5.20
2.50
4.18
3.90
4.29
4.30
4.03
3.80
4.89
4.52
4.67
T
sintering
(C)
1300C
1300C
1300C
1300C
1300C
1320C
1320C
1320C
1320C
1320C
1370C
1370C
1370C
1370C
1370C
1220C
1220C
No.
R(k)
7
807
No.
R(k)
7
861
R
c.c.
100 M
90 M
12 M
30 M
40 M
35 M
17 M
10 M
340 M
150 M
20 M
450 M
40 M
60 M
5000 M
6000 M
tg104
C
c.a.
3.4 M
6.7 M
2.25 M
6.2 M
3.68 M
2 M
6.4 M
2.2 M
6.3 M
2.9 M
1.2 M
3.6 M
1.7 M
3.4 M
1.6 M
19 M
21 M
250
311
279
311
228
347
312
299
305
228
377
360
278
362
316
355
443
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
2011
1072
3246
1216
2286
4200
965
3323
1158
3130
4650
1527
4035
2064
4335
346
216
f
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
kHz
11
1.52
12
2.10
11
4.77
12
4.52
5. Concluzii
5. Conclusions
Refe rences
1. Blanchart, P ., Balestrieri, D., Weber, F., Abelard, P .: Influence of Calcium Addition on the Microstructure and the Electrical
Properties at Room Temperature of BaTiO 3 for PTC Thermistors. Silicates Industriels, Vol. 1, no. 2, 1994, p. 47-52
2. Gissibi, B., Wilhelm, D., Herring, H.: Electron microscopy of nanocrystalline BaTiO 3. NanoStructured Materials, Vol. 9, 1997,
p. 619-622
3. Beek, H.P ., Muller, F., Haberkorn, R., Wilhelm, D.: Synthesis of perovkite type compounds via different routes and their X-Ray
characterization. NanoStructured Materials, Vol. 6, 1995, p. 659-662
4. Brzozowski, E., Castro, M.S.: Conduction mechanism of barium titanate ceramics. Ceramics International, 26, 2000, p. 265-269
5. Tuan, W.H., Lin, S.K.: The microstructure-mechanical properties relationship of BaTiO 3. Ceramics International, 25, 1999, p. 35-40
133