D1

Vin

PMDC Motor

D3

S1

S3

D2

D4

S2

S4

1.

30Vdc

OPTOCOUPLER
1The function of Optocoupler is to isolate
the control circuit from power circuit.PWM
signal from the FPGA is not directly fed to
the power circuit in order to protect the
PWM signal it is essential to provide
isolation circuit between power circuit and
control circuit or else the high power
components may damage the low power
PWM circuit components. The 6N137
consist of a high emitting diode and a onechip photo IC. This unit is 8lead DIP
package.
2.

2GATE DRIVER (IR2110)

A IGBT drive circuit is designed to connect the gate directly to a voltage bus with no
intervening resistance other than the impedance of the drive circuit switch. Gate driver

acts as a high-power buffer stage between the PWM output of the control device and
gates of the primary power switching IGBT.
The gate drive requirements for a power MOSFET or IGBT utilized as a high side switch
(drain connected to the high voltage rail, as shown in Figure, driven in full enhancement,
i.e., lowest voltage drop across its terminals, can be summarized as follows:

Gate voltage must be 10-15V higher than the drain voltage. Being a high side
switch, such gate voltage would have to be higher than the rail voltage, which is
frequently the highest voltage available in the system.
The gate voltage must be controllable from the logic, which is normally
referenced to ground. Thus, the control signals have to be level-shifted to the
source of the high side power device, which, in most applications, swings
between the two rails.
The power absorbed by the gate drive circuitry should not significantly affect the
overall efficiency.
A Typical Block Diagram
The block diagram of the IR2110 will be used to illustrate the typical structure of most
MGDs. It comprises a drive circuit for a ground referenced power transistor, another for a
high side one, level translators and input logic circuitry.

Figure. Block Diagram of the IR2110

Input logic
Both channels are controlled by TTL/CMOS compatible inputs. The transition thresholds
are different from device to device. Some MGDs, (IR211x and IR215x) have the
transition threshold proportional to the logic supply VDD (3 to 20V) and Schmitt trigger
buffers with hysteresis equal to 10% of VDD to accept inputs with long rise time. Other
MGDs (IR210x, IR212x, IR213x) have a fixed transition from logic 0 to logic 1 between
1.5 to 2 V. Some MGDs can drive only one high-side power device. Others can drive one
high-side and one low-side power device. Others can drive a full three-phase bridge. It
goes without saying that any high-side driver can also drive a low side device. Those
MGDs with two gate drive channel can have dual, hence independent, input commands
or a single input command with complementary drive and predetermined dead time.
Those application that require a minimum deadtime should use MGDs with independent
drive and relay on a few passive components to build a deadtime. The propagate

on

delay between input command and gate drive output is approximately the same for both
channels at turn-on (120ns) as well as turn-off (95ns) with a temperature dependence
characterized in the data sheet. The shutdown function is internally latched by logic 1

signal and activates the turn off of both power devices. The first input command after the
removal of the shutdown signal clears the latch and activates its channel. This latched
shutdown lends itself to a simple implementation of a cycle-by-cycle current control, as
exemplified in Section 12. The signals from the input logic are coupled to the individual
channels through high noise immunity level translators. This allows the ground reference
of the logic supply (VSS on pin 13) to swing by 5V with respect to the power ground
(COM). This feature is of great help in coping with the less than ideal ground layout of a
typical power conditioning circuit. As a further measure of noise immunity, a pulse-width
discriminator screens out pulses that are shorter than 50ns.
Low Side Channel
The output stage is implemented either with two N-Channel MOSFETs in totem pole
configuration (source follower as a current source and common source for current
sinking), or with an N-Channel and a P-Channel CMOS inverter stage. Each MOSFET
can sink or source gate currents from 0.12 to 2A, depending on the MGD. The source of
the lower driver is independently brought out to pin 2 so that a direct connection can be
made to the source of the power device for the return of the gate drive current. An
undervoltage lockout prevents either channel from operating if VCCis below the specified
value (typically 8.6/8.2V).
Any pulse that is present at the input command for the low-side channel when the UV
lockout is released turns on the power transistor from the moment the UV lockout is
released.
High side channel
This channel has been built into an isolation tub capable of floating from 500 or 600V
to -5V with respect to power ground (COM). The tub floats at the potential of V S,
which is established by the voltage applied to V B. Typically this pin is connected to the
source of the high side device, as shown in Figure. and swings with it between the two

rails. f an isolated supply is connected between this pin and VS, the high side channel will
switch the output (HO) between the positive of this supply and its ground in accordance
with the input command. One significant feature of MOS-gated transistors is their
capacitive input characteristic, i.e., the fact that they are turned on by supplying a charge
to the gate rather than a continuous current. If the high side channel is driving one such
device, the isolated supply can be replaced by a capacitor, as shown in Figure.
I the gate charge for the high side MOSFET is provided by the bootstrap capacitor, which
is charged by the 15V supply through the bootstrap diode during the time when the
device is off (assuming that VSswings to ground during that time, as it does in most
applications). Since the capacitor is charged from a low voltage source the power
consumed to drive the gate is small.
The input commands for the high side channel have to be level-shifted from the level of
COM to whatever potential the tub is floating at which can be as high as 500V. As shown
in Figure, the on/off commands are transmitted in the form of narrow pulses at the rising
and falling edges of the input command. They are latched by a set/reset flip-flop
referenced to the floating potential.
The use of pulses greatly reduces the power dissipation associated with the level
translation. The pulse discriminator filters the set/reset pulses from fast dv/dt transients
appearing on the VSnode so that switching rates as high as 50V/ns in the power devices
will not adversely affect the operation of the MGD. This channel has its own
undervoltage lockout (on some MGDs), which blocks the gate drive if the voltage
between VBand VS, i.e., the voltage across the upper totem pole is below its limits
(typically 8.7/8.3V). The operation of the UV lockout differs from the one on V CCin one
detail: the first pulse after the UV lockout has released the channel changes the state of
the output. The high voltage level translator circuit is designed to function properly even
when the VSnode swings below the COM pin by a voltage indicated in the datasheet,
typically 5 V. This occurs due to the forward recovery of the lower power diode or to the

Ldi/dt induced voltage transient. Section 5 gives directions on how to limit this negative
voltage transient.
3.

POWER CIRCUIT

The Power circuit consists of single legs MOSFET circuit (HalfBridge). MOSFET
(IRF840) switch is used as a switching device in the power circuit. The PWM signal
from the driver IC is fed to the gate of the switch. The output from the power circuit is
given to the load. The power circuit is operating for two quadrant operation.

Two quadrant chopper

Two quadrant chopper has the ability to operate at first and second quadrant mode. So the
input voltage and output voltage of chopper must be positive . but the input current and
output current may be positive or negative.

Output current wave form of two quadrant chopper

Characteristics curve of two quadrant chopper

where duty ratio

d =Ton/T

T= Ton +Toff

4.

SPEED SENSOR

Motor speed is measured by optical encoder sensor. Optical encoder output is converted
to analog signal using XR4151 frequency to voltage converter.
Motor speed is sensed from the following methods.
1. Optical Encoder
2. Quadrature Encoder Pulse
3. Resolver
This project used for optical encoder sensors.
OPTICAL Encoder
A circular windows around the circular disk mounted on the motor shaft such that it
rotates with the shaft. A LED is mounted on the one side of the disk and a phototransistor
is mounted on the other side of the disk, opposite to the LED, the following figure-shows
the speed sensor

Optical Encoder Speed Sensor

During rotation when circular window come across the LED, the light passes to the
phototransistor. As a result, phototransistor conducts and produces low output at its
collector. Each time when light passes through window to the phototransistor, it conducts
and output goes low, otherwise phototransistor is off and output is high. As disk rotates
the train of pulses are generated. The number of pulses in one rotation equals the number
of circular windows on the disk. Therefore by counting number of pulses we can decide
the position of the shaft as well as number of rotations performed by the shaft. By
counting the number of rotations in specific time we can also calculate the speed of
rotation. Counting the number of pulses in specific time, these pulses convert frequency
to voltage by using frequency to voltage converter.
5.

FREQUENCY TO VOLTAGE CONVERTER (F/V)

Optical encoder output is frequency format, this format of signal is not directly feed to
I2C ADC (PCF89c51). So frequency is converting to analog voltage signal using XR4151
frequency to voltage converter, this analog signal is connected to I 2C ADC (PCF89c51).
ADC output is feed to FPGA.
Features
The XR4151 can be used as a frequency to voltage converter.
The voltage applied to comparator input Pins6 and 7 should not be allowed to go
below ground by more then 0.3V.
The input frequency range is 0 to 10KHz and corresponding voltage output level
is -10mV to -10V.
POWER SUPPLY
There are many types of power supply. Most are designed to convert high voltage AC
mains electricity to a suitable low voltage supply for electronics circuits and other
devices. A power supply can by broken down into a series of blocks, each of which
performs a particular function.

Each of the blocks is described in more detail below:

Transformer - steps down high voltage AC mains to low voltage AC.

Rectifier - converts AC to DC, but the DC output is varying.

Smoothing - smoothes the DC from varying greatly to a small ripple.

Regulator - eliminates ripple by setting DC output to a fixed voltage.

Transformer
Transformers convert AC electricity from one voltage to another with little loss of power.
Transformers work only with AC and this is one of the reasons why mains electricity is
AC.

Figure.

Transformer and

Circuit

symbol
Step-up transformers increase voltage, step-down transformers reduce voltage. Most
power supplies use a step-down transformer to reduce the dangerously high mains
voltage (230V in UK) to a safer low voltage.
The input coil is called the primary and the output coil is called the secondary. There is
no electrical connection between the two coils; instead they are linked by an alternating
magnetic field created in the soft-iron core of the transformer. The two lines in the middle
of the circuit symbol represent the core.
Transformers waste very little power so the power out is (almost) equal to the power in.
Note that as voltage is stepped down current is stepped up.

The ratio of the number of turns on each coil, called the turns ratio, determines the ratio
of the voltages. A step-down transformer has a large number of turns on its primary
(input) coil, which is connected to the high voltage mains supply, and a small number of
turns on its secondary (output) coil to give a low output voltage.
Turns ratio =

Vp
Np
=
Vs
Ns

and

Power out = power in

Vs Is = Vp Ip

Vp = primary (input) voltage

Np = number of turns on primary coil
Ip = primary (input) current
Vs = secondary (output) voltage
Ns = number of turns on secondary coil
Is = secondary (output) current
Bridge rectifier
A bridge rectifier can be made using four individual diodes, but it is also available in
special packages containing the four diodes required. It is called a full-wave
rectifier because it uses all the AC wave (both positive and negative sections). 1.4V
is used up in the bridge rectifier because each diode uses 0.7V when conducting
and there are always two diodes conducting, as shown in the diagram below. Bridge
rectifiers are rated by the maximum current they can pass and the maximum reverse
voltage they can withstand (this must be at least three times the supply RMS
voltage so the rectifier can withstand the peak voltages). Please see the Diodes page
for more details, including pictures of bridge rectifiers.

Figure: Bridge rectifier

Output: full-wave varying DC

Smoothing
Smoothing is performed by a large value electrolytic capacitor connected across the DC
supply to act as a reservoir, supplying current to the output when the varying DC voltage
from the rectifier is falling. The diagram shows the unsmoothed varying DC (dotted line)
and the smoothed DC (solid line). The capacitor charges quickly near the peak of the
varying DC, and then discharges as it supplies current to the output.

Figure. Capacitor Charging and Discharging

Note that smoothing significantly increases the average DC voltage to almost the peak
value (1.4 RMS value). For example 6V RMS AC is rectified to full wave DC of about
4.6V RMS (1.4V is lost in the bridge rectifier), with smoothing this increases to almost
the peak value giving 1.4 4.6 = 6.4V smooth DC.
Smoothing is not perfect due to the capacitor voltage falling a little as it discharges,
giving a small ripple voltage. For many circuits a ripple which is 10% of the supply
voltage is satisfactory and the equation below gives the required value for the smoothing
capacitor. A larger capacitor will give less ripple. The capacitor value must be doubled
when smoothing half-wave DC.
Smoothing capacitor for 10% ripple, C =
C = smoothing capacitance in farads (F)
Io = output current from the supply in amps (A)

5 Io
Vs f

Vs = supply voltage in volts (V), this is the peak value of the unsmoothed DC
f

= frequency of the AC supply in hertz (Hz)

Regulator
Voltage regulators ICs are available with fixed (typically 5, 12 and 15V) or variable
output voltages. They are also rated by the maximum current they can pass. Negative
voltage regulators are available, mainly for use in dual supplies. Most regulators include
some automatic protection from excessive current ('overload protection') and overheating
('thermal protection').

Figure- Regulator Symbol and Pictorial View

Many of the fixed voltage regulator ICs have 3 leads and look like power transistors, such
as the 7805 +5V 1A regulator shown on the right. They include a hole for attaching a
heatsink if necessary.

The regulated DC output is very smooth with no ripple. It is suitable for all electronic
circuits.

Multi output Power Supply

Figure. Multiple Power Supply (+5V, +12V and 12V)

Multi output power supply outputs are +5V, +12V and 12V. Input AC signal is applied
to primary of transformer, transformer secondary is two outputs; one is 0-9V AC and
another is 18-0-18V. Transformer secondary output is connected to regulator through full
bridge rectifier and filtering capacitor. Diode is used for convert the AC voltage to DC
voltage with AC ripples; capacitor is used for remove the AC ripples. Regulator output is
regulating the DC output voltage.

Transformer

Primary Voltage

230V AC

Secondary Voltage

0-9V AC and 18-0-18V AC

IC - 7805 and 7812

Positive Voltage Regulator (+5v and +12V).

IC - 7912

Negative Voltage Regulator (-12V)

Diode

1N4007

Capacitor

4700f/16V, 4700f/25V and 10f/63V0

Regulator

CIRCUIT DIAGRAM

Figure. (a) Circuit Diagram of PMDC Motor Speed control

Figure. (b) Circuit Diagram of PMDC Motor Speed control

D1
Vin

PMDC Motor

D3

S1

S3

D2

D4

S2

S4

30Vdc

Figure. (c) Circuit Diagram of PMDC Motor Speed control

CONCLUSION
The FPGA Based DC Motor Speed Control Using PWM Technique was done and the output
was verified Successfully.

DATA SHEETS
1.

6N137 OPTOCOUPLER

The 6N137 consist of a high emitting diode and a one chip photo IC. This unit is 8lead
DIP package.
__ LSTTL / TTL compatible: 5V Supply
__ Ultra high speed: 10MBd
__ Guaranteed performance over temperature: 0C to 70C
__ High isolation voltage
: 2500Vrms min.
__ UL recognized
: UL1577, file no. E67349

Pin Details
1 : N.C.
3 : Cathode
5 : GND
7 : Enable
Maximum Ratings

2 : Anode
4 : N.C.
6 : Output(Open collector)
8 : VCC

2.

IR2110 (MOSFET Driver)

Specification
VOFFSET (IR2110) 500V max.
IO+/- 2A / 2A
VOUT 10 - 20V
Ton/off (typ.) 120 & 94 ns
Delay Matching (IR2110) 10 ns max.

Figure. Pin Diagram for IR2110

Lead Definitions

Features
Floating channel designed for bootstrap operation fully operational to +500V or
+600V Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Under voltage lockout for both channels
3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and
power ground 5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with
independent high and low side referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Propagation delays are matched to simplify use in high frequency
applications. The floating channel can be used to drive an N-channel power MOSFET or
IGBT in the high side configuration which operates up to 500 or 600 volts.

Figure. Typical Connection for IR2110 MOSFET Driver

Functional Block Diagram

Figure. Functional Block Diagram for IR2110 MOSFET Driver

Absolute Maximum Ratings

3.

4584 (NOT Gate)

The 4584 Hex Schmitt Trigger is constructed with MOS Pchannel and Nchannel
enhancement mode devices in a single monolithic structure. These devices find primary
use where low power dissipation and/or high noise immunity is desired.

SupplyVoltageRange = 3.0 Vdc to 18 Vdc

Capable of Driving Two Lowpower TTL Loads or One Lowpower Schottky TTL
Load over the Rated Temperature Range
Double Diode Protection on All Inputs
For Greater Hysteresis,
Pin Diagram

Figure. Pin diagram for 4584

Maximum Ratings

4.

IRF840 (MOSFET)

This N-Channel enhancement mode silicon gate power field effect transistor is an
advanced power MOSFET designed, tested, and guaranteed to withstand a specified level
of energy in the breakdown avalanche mode of operation. All of these power MOSFETs
are designed for applications such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar switching transistors requiring
high speed and low gate drive power. These types can be operated directly from
integrated circuits.
Features
8A, 500V
rDS(ON) = 0.850
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance

Figure. Pictorial and Symbol of IRF840- MOSFET

Absolute Maximum Ratings

5.

XR4151-V_F F-V converter

Features

Applications

Pin Diagram

6.

Figure. Pin Diagram and Pin Description

TL084 (Op. Amp.)

Features

Wide Common-Mode (Up To Vcc +) And Differential Voltage rang.

Low Input Bias And Offset Current.
Output short-Circuit Protection
High Input Impedance JFET Input Stage.
Internal Frequency Compensation.
Latch Up Free Operation
High Slewrate: 16v/us (Typ)

DESCRIPTION
The TL084, TL084A and TL084B are high speed JFET input quad operational
amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a
monolithic integrated circuit. The devices feature high slewrates, low input bias and
offset currents, and low offset voltage temperature coefficient.

Figure. Pin Description

Electrical Characteristics
Symbol
VCC

Parameter
Supply Voltage - (note 1)

Value
18

Unit
V

Vi
Vid
Ptot

Input Voltage - (note 3)

Differential Input Voltage - (note 2)
Power Dissipation
Output Short-circuit Duration - (note 4)
Operating Free AirTemperatureRange
TL084C, AC, BC
TL084I, AI, BI
TL084M, AM, BM
StorageTemperatureRange

15
30
680
Infinite

V
V
mW

Toper

Tstg
Note:
1.

0 to 70
40 to 105
55 to 125
65 to 150

C
C

All voltage values, except differential voltage, are with respect to the zero
reference level (ground) of the supply voltages where the zero reference
level is the midpoint between +VCC and -VCC.

2.

Differential voltages are at the non-inverting input terminal with respect to

the inverting input terminal.

3.

The magnitude of the input voltage must never exceed the magnitude of
the supply voltage or 15 volts, whichever is less.

4.

The output may be shorted to ground

Absolute Maximum Ratings