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FMV10N80E

FUJI POWER MOSFET

Super FAP-E3 series

N-CHANNEL SILICON POWER MOSFET

Features

Outline Drawings [mm]

Maintains both low power loss and low noise

Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.00.5V)
High avalanche durability

Equivalent circuit schematic

TO-220F(SLS)

Drain(D)

Applications

Gate(G)
Source(S)

Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25C (unless otherwise specified)
Description

Continuous Drain Current

Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt

Symbol
VDS
VDSX
ID
I DP
VGS
IAR
E AS
E AR
dV/dt
-di/dt

Maximum Power Dissipation

PD

Operating and Storage Temperature range

Tch
Tstg

Drain-Source Voltage

Characteristics
800
800
10
40
30
10
572.4
8.5
2.1
100
2.16
85
150
-55 to + 150

Unit
V
V
A
A
V
A
mJ
mJ
kV/s
A/s

Remarks
VGS = -30V

Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25C
Tc=25C

W
C
C

Electrical Characteristics at Tc=25C (unless otherwise specified)

Static Ratings
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage

Symbol
BVDSS
VGS (th)

Zero Gate Voltage Drain Current

I DSS

Gate-Source Leakage Current

Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q SW
Q GD
IAV
VSD
trr
Qrr

Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Drain-Source Crossover Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge

Conditions
I D =250A, VGS=0V
I D =250A, VDS=VGS
VDS=800V, VGS=0V
VDS=640V, VGS=0V
VGS=30V, VDS=0V
I D =5.0A, VGS=10V
I D =5.0A, VDS=25V

Tch=25C
Tch=125C

VDS=25V
VGS=0V
f=1MHz
Vcc =600V
VGS=10V
I D =5.0A
RG=24
Vcc =450V
I D =10A
VGS=10V
See Fig.5
L=4.20mH, Tch=25C
I F=10A, VGS=0V, Tch=25C
I F=10A, VGS=0V
-di/dt=100A/s, Tch=25C

min.
800
3.5
5.0
10
-

typ.
4.0
10
0.9
10
1650
165
11
34
32
105
30
50
14
6
17
0.90
1.8
15

max.
4.5
25
250
100
1.1
2500
250
17
51
48
160
45
75
21
9
26
1.35
-

Unit
V
V

min.

typ.

max.
0.862
50.0

Unit
C/W
C/W

A
nA

S
pF

ns

nC
A
V
S
C

Thermal Characteristics
Description
Thermal resistance

Symbol
Rth (ch-c)
Rth (ch-a)

Note *1 : Tch150C.
Note *2 : Stating Tch=25C, IAS=4.0A, L=65.6mH, Vcc=80V, RG =10,
E AS limited by maximum channel temperature and avalanche current.

Test Conditions
Channel to case
Channel to ambient

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

Note *4 : I F -I D, -di/dt=100A/s, VccBVDSS, Tch150C.
Note *5 : I F -I D, dv/dt=2.1kV/s, VccBVDSS, Tch150C.

FMV10N80E

120

FUJI POWER MOSFET

http://www.fujisemi.com
Safe Operating Area
ID=f(VDS):Duty=0(Singlepulse), Tc=25c

Allowable Power Dissipation

PD=f(Tc)
10

t=
1s

100

10

10s

80

60

ID [A]

PD [W]

100s

10

1ms

40

10

Po we r loss wavefo rm :
Sq uare wa veform

-1

20

PD
t

10
0

25

50

75
Tc [C]

100

125

150

-2

10

-1

10

10
VDS [V]

10

10

Typical Transfer Characteristic

ID=f(VGS):80s pulse test, VDS=25V, Tch=25C

Typical Output Characteristics

ID=f(VDS):80s pulse test, Tch=25C
20

100

20V
10V
7.0V

15

ID[A]

ID [A]

10

10

6.0V

5
VGS=5.5V

0.1

0
0

12
VDS [V]

16

20

24

Typical Transconductance
gfs=f(ID):80s pulse test, VDS=25V, Tch=25C

5
VGS [V]

10

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80s pulse test, Tch=25C

100

2.4
VGS=5.5V

6V

2.0

RDS(on) []

gfs [S]

10

1.6
7V
10V
20V

1.2

0.8

0.1
0.1

10

100

ID [A]

10
ID [A]

12

14

16

18

FMV10N80E

FUJI POWER MOSFET

http://www.fujisemi.com

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS, ID=250A

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=5.0A, VGS=10V

3.5

3.0

6
VGS(th) [V]

RDS(on) []

2.5

2.0

max.
typ.

1.5

min.

max.
1.0
typ.

0.5

0.0
-50

-25

25

50

75

100

125

150

-50

Tch [C]

25

50

75

100

125

Typical Capacitance
C=f(VDS):VGS=0V, f=1MHz

14

10

10

10

Vcc= 160V
400V
640V

12

Ciss

10

C [pF]

Coss

10

Crss

10

10

20

30

40
Qg [nC]

50

60

70

10

80

-2

10

-1

10

10

10

VDS [V]

Typical Switching Characteristics vs. ID

t=f(ID):Vcc=600V, VGS=10V, RG=24

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80s pulse test, Tch=25C
100

10

tf

10

td(off)
10

td(on)

t [ns]

IF [A]

150

Tch [C]

Typical Gate Charge Characteristics

VGS=f(Qg):ID=10A, Tch=25C

VGS [V]

-25

tr
10

10

0.1

0.01
0.00

0.25

0.50

0.75
VSD [V]

1.00

1.25

10

1.50

-1

10

10
ID [A]

10

FMV10N80E

FUJI POWER MOSFET

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Maximum Avalanche Energy vs. starting Tch

E(AV)=f(starting Tch):Vcc=80V, I(AV)<=10A
600
IAS=4.0A
500

Transient Thermal Impedance

Zth(ch-c)=f(t):D=0
10

10

IAS=6.0A
300
Zth(ch-c) [/W]

EAV [mJ]

400

IAS=10A

200

100

0
0

25

50

75

100

125

10

-1

10

-2

10

-3

15 0

10

-6

10

-5

10

-4

10

-3

t [sec]

startingTch [C]

10

-2

10

-1

10

FMV10N80E

FUJI POWER MOSFET

http://www.fujisemi.com

WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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