What is a nucleonic sensing method

employing usually one or more

radioisotope sources and radiation
detectors?
A. Radiation sensing
B. Sonic level sensing
C. Conductivity level
sensing
D. Dielectric variation
sensing
2. What is concerned with the
measurement of electric signals on the
scalp with arise from the underlying
neural activity in the brain (including
synaptic sources)?
A. ECG
B. EEG
C. Ultrasound
D. EKG
3. In therapeutic radiology and in nuclear
medicine, the energies of interest range
from about
A. 10 to 100 KeV
B. 100 to 10000 KeV
C. 10000 to 10000 KeV
D. 1 to 10 KeV
4. Which of the following is a four-layer
diode with an anode gate and a cathode
gate?
A. SCS
B. SCR
C. SBS
D. SUS
5. What is basically a two-terminal
parallel-inverse combination of
semiconductor layers that permits
triggering in either direction?
A. Diac
B. Triac
C. Quadrac
D. Shockley Diode
6. What is the typical value of the
interbase resistance of UJTs?
A. 20 K
B. Between 4 to 4 K
C. 4 K
D. Between 4 to 10 K
7. PUT stands for
A. Programmable
Unijunction Transistor
B. Programmable
Universal Transistor
C. Pulse Unijunction
Transistor
D. Pulse Universal
Transistor
8. Which transistor conducts current in
both directions when turned on?
A. Diac
B. SCR
C. Quadrac
D. SCS
9. What is a three terminal device used to
control large current to a load?
A. SCR
B. SCS
C. GTO
D. Thyristor

10. What is the other term for

thermoelectric effect?
A. Seebeck effect
B. Hall effect
C. Photoelectric effect
D. Thermal effect
11. What are the regions corresponding to
open-circuit condition for the controlled
rectifier which block the flow of charge
from anode to cathode?
A. Forward blocking
regions
B. Reverse blocking
regions
C. Breakdown regions
D. Both A and B above
12. The V-I characteristics for a triac in
the first and third quadrants are
essentially identical to those of _____ in
the quotation.
A. SCR
B. UJT
C. Transistor
D. SCS
13. When the temperature increases, the
inter-base resistance of a UJT
A. Remains unchanged
B. Increases
C. Decreases
D. is zero
14. The three terminals of a triac are
A. drain, source, gate
B. two main terminals
and a gate terminal
C. cathode, anode and
gate
D. anode, source, gate
15. A triac is equivalent to two SCRs
A. in parallel
B. in inverse-parallel
C. in series
D. in inverse-series
16. In diagnostic radiology and for
superficial therapy purposes, the energy
spectrum of radiation varies from about
A. 1 to 10 KeV
B. 10 to 100 KeV
C. 100 to 10000 KeV
D. 10000 to 100000 KeV
17. The x-ray region of the
electromagnetic spectrum has a
corresponding range of wavelengths from
A. 0.1 to 0.0001 nm
B. 0.1 to 0.0001 pm
C. 0.1 to 0.0001 m
D. 0.1 to 0.0001 mm
18. The three terminals of an SCR are the
A. anode, cathode, and
grid
B. cathode, anode, gate
C. anode, cathode, drain
D. drain, source, gate
19. If a body is considered as a
conducting sphere of 0.5m radius its
capacitance to infinity is
A. 55 pF
B. 55 nF
C. 55 F

D. 55 F
20. How many semiconductor layers does
an SCR have?
A. Four
B. Two
C. Three
D. Five
21. A triac is a _____ switch.
A. unidirectional
B. mechanical
C. bidirectional
D. omnidirectional
22. Which of the following is the normal
way to turn on an SCR?
A. By breakover voltage
B. By appropriate anode
current
C. By appropriate
cathode current
D. By appropriate gate
current
23. A triac can pass a portion of _____ half
cycle through the load
A. only positive
B. only negative
C. both positive and
negative
D. neither positive nor
negative
24. A diac has how many terminals?
A. Two
B. Three
C. Four
D. Five
25. An SCR combines the feature of
A. a rectifier and
resistance
B. a rectifier and
capacitor
C. a rectifier and
transistor
D. a rectifier and
inductor
26. Which is the control element in an
SCR?
A. Anode
B. Cathode
C. Gate
D. Cathode supply
27. How many semiconductor layers does
a triac have?
A. Two
B. Four
C. Three
D. One
28. A diac has how many semiconductor
layers?
A. Three
B. Four
C. Two
D. Five
29. The p-type emitter of a UJT is _____
doped.
A. lightly
B. moderately
C. heavily
D. not
30. A diac has

A. one pn junction
B. three pn junctions
C. two pn junctions
D. four pn junctions
31. A UJT is sometimes called a ____ diode.
A. double-based
B. single-based
C. a rectifier
D. a switching diode
32. A diac is _____ switch.
A. an AC
B. a mechanical
C. a dc
D. both ac and dc
33. An SCR is made of silicon and not
germanium because silicon.
A. is inexpensive
B. has low leakage
current
C. is mechanically strong
D. is tetravalent
34. What is the control element in an
SCR?
A. Gate
B. Anode
C. Grid
D. Cathode
35. An effect that reduces the possibility
of accidental triggering of the SCS.
A. Miller effect
B. Rate effect
C. End effect
D. Flywheel effect
36. Which of the following is a common
application of UJT?
A. Amplifier
B. Rectifier
C. Mulitivibrator
D. Sawtooth generator
37. Which device does not have a gate
terminal?
A. Triac
B. SCR
C. FET
D. Diac
38. An SCR is a _____ triggered device.
A. current
B. power
C. voltage
D. noise
39. When UJTs is turned on, the resistance
between emitter terminal and lower base
terminal
A. remains unchanged
B. increases
C. decreases
D. becomes zero
40. The UJT has
A. two pn junctions
B. three pn junctions
C. one pn junction
D. four on junction
41. The UJT may be used as
A. an amplifier
B. a rectifier
C. a sawtooth generator
D. a multivibrator
42. Which of the following is the normal

way to turn on a diac?

A. By breakover voltage
B. By gate voltage
C. By gate current
D. By anode current
43. Power electronics deals with the
control of ac power at what frequencies
essentially?
A. 20 KHz
B. 1000 KHz
C. Frequencies less than
10 Hz
D. 60 Hz frequency
44. When the emitter terminal of a UJT is
open, the resistance between the baseterminals is generally
A. low
B. extremely low
C. high
D. extremely high
45. AC power in a load can be controlled
by connecting
A. two SCRs in series
B. two SCRs in parallel
C. two SCRs in parallel
opposition
D. two SCRs in series
opposition
46. Which equation defines the intrinsic
stand off ratio () of UJTs?
A. R B1 / (R B1 + R B2 )
B. (R B1 + R B2 ) / R B1
C. (R B1 + R B2 ) / R B2
D. R B1 + R B2
47. To turn off the SCR, which of the
following is done?
A. Reduce gate voltage
to zero
B. Reverse bias the gate
C. Reduce anode voltage
to zero
D. Reduce cathode
voltage to zero
48. Control system that maintains a speed
voltage, or other variable within specified
limits of a preset level.
A. Controller
B. Regulator
C. Sensor
D. Computer
49. To turn on the UJT, the forward bias
on emitter diode should be _____ the peak
point voltage.
A. more than
B. less than
C. equal to
D. twice
50. When the temperature increases, the
intrinsic stand off ratio
A. increases
B. decreases
C. essentially constant
D. becomes zero
51. What is dimensionless parameter of
the second-order characteristic equation?
A. Damping ratio
B. Accuracy

C. Efficiency ratio
D. Transfer function
ratio
52. What is the ratio of two exponential
functions of time called?
A. Transfer function
B. Damping ratio
C. Efficiency
D. Gain
53. A diac is turned on by
A. breakover voltage
B. gate current
C. gate voltage
D. anode current
54. An SCR whose state is controlled by
the light falling upon a silicon
semiconductor layer of the device.
A. SCS
B. GTO
C. Thyristor
D. LASCR
55. A diac is simply
A. a single junction
B. a three junction
device
C. a triac without a gate
terminal
D. the SCR
56. What region lies between the peak
point and valley point of UJT emitter
characteristic?
A. Saturation
B. Cut off
C. Negative resistance
D. Positive resistance
57. What refers to the application of
electronic theory, technology,
instrumentation, and computing system
to biological research and medical
problems?
A. Medical electronics
B. Genetics electronics
C. Biomedical
engineering
D. Biomedical
electronics
58. Which device exhibits negative
resistance region?
A. Diac
B. Triac
C. Transistor
D. UJT
59. The UJT operates in what region after
peak point?
A. Cut off
B. Negative resistance
C. Saturation
D. Positive resistance
60. SCR is a rectifier constructed of silicon
material. Silicon is chosen because
A. it is the most
abundant material
B. of its strength and

ruggedness
C. it is much cheaper
than any other material
D. of its high
temperature and power
capabilities
61. A transduction principle used
primarily in optical sensors.
A. Photoconductive
transduction
B. Photovoltaic
transduction
C. Electromagnetic
transduction
D. Piezoelectric
transduction
62. What is a solid state equivalent of a
gas filled triode?
A. Triac
B. Thyristor
C. SCR
D. SCS
63. The supply voltage is generally _____
that of breakover voltage in an SCR.
A. equal to
B. less than
C. greater than
D. twice
64. The triac is fundamentally a/an _____
with a gate terminal for controlling the
turn-on conditions of the bilateral device
in either direction.
A. SCR
B. Quadric
C. Shockley diode
D. Diac
65. When the supply voltage exceeds the
breakover voltage of an SCR, it
A. starts conducting
B. stops conducting
C. conducts leakage
current
D. conducts terminal
current
66. The step response of a first order
systems is given by
A. y(t) = A0
B. y(t) = A0 + A1 es1t +
A 2es2t +A 3e s3t
C. y(t) = A0 + A1 es1t +
A 2es2t
D. y(t) = A 0 + A 1e s1t
67. A feedback control system in which
the controlled variable is mechanical
position.
A. Closed-loop feedback
control system
B. Open-loop feedback
control system
C. Servomechanism
D. Mechanical
servomechanism
68. What is that voltage above when the

SCR enters the conduction region?

A. Reverse breakover
voltage
B. Forward breakover
voltage
C. Holding voltage
D. Trigger voltage
69. A locus or path of the roots traced out
on the s-plane as a parameter is changed.
A. Root locus
B. Hyperbola
C. Parabola
D. Circle
70. A control system in which the output
is related to the input by device
parameters only.
A. Open-loop control
system
B. Closed-loop control
system
C. Servomechanism
D. Feedback control
system
71. What is that value of current below
which the SCR switches from the
conduction state to the forward blocking
region under stated conditions?
A. Holding current
B. Forward current
C. Reverse current
D. Trigger current
72. Which is equivalent to a zener or
avalanche region of the fundamental twolayer semiconductor diode?
A. Reverse breakdown
voltage
B. Forward breakdown
voltage
C. Breakdown voltage
D. Breakover voltage
73. What is the required gate triggering
current of GTO?
A. 20 mA
B. 10 mA
C. 30 mA
D. 40 mA
74. What is an automatic speed control
device using the centrifugal force on
rotating flyweights as the feedback
element?
A. Regulator
B. Flywheel governor
C. Field control
D. Throttle valve
75. What is the sensing element of
acceleration transducer?
A. Damper
B. Spring
C. Seismic mass
D. Crystal
76. What are some areas where GTO is
applicable?
A. Counters

B. Pulse generators
C. Multivibrators
D. All of the above
77. What Greek word which means
switch?
A. Ristor
B. Trans
C. Thy
D. Thyristor
78. What is the typical turn-on time of an
SCR?
A. 1 s
B. 5 s
C. 10 s
D. 3 s
79. An SCR is a solid state equivalent of
which tube?
A. Triode
B. Gas-filled triode
C. Pentode
D. Tetrode
80. The gate of an SCR is _____ with
respect to its cathode.
A. positive
B. at zero potential
C. negative
D. at infinite potential
81. A normally operated SCR has an
anode which is _____ with respect to
cathode.
A. negative
B. positive
C. at zero potential
D. at infinite potential
82. What device measures humidity
directly with a single sensing element?
A. Hygrometer
B. Tachometer
C. Venturi meter
D. Hydrometer
83. What is one of the most widely used
sensing elements particularly for pressure
ranges higher than 2 MPa?
A. Bellows
B. Bourdon tube
C. Capsule
D. Straight tube
84. Which of the following can change the
angle of conduction in SCR?
A. Changing anode
voltage
B. Changing gate voltage
C. Reverse biasing the
gate
D. Changing cathode
voltage
85. An SCR is a member of what family?
A. Thyrector
B. Thyratron
C. Thyristor
D. Transistor
86. How many pn junction does SCRs
have?

A. Two
B. Four
C. Three
D. Five
87. Which of the following is NOT a
method primarily used for density
sensing?
A. Sonic
B. Radiations
C. Vibrating element
D. Differential
88. When SCR starts conducting, then
_____ losses all control.
A. gate
B. anode
C. cathode
D. anode supply
89. An SCR when turned on has a typical
voltage across of
A. zero
B. 0.1 V
C. infinite
D. 1 V
90. The typical turn-off time of an SCR is
about
A. 20 to 40 s
B. 5 to 40 s
C. 1 to 5 s
D. 15 to 25 s
91. An SCR is made of what material?
A. Silicon
B. Carbon
C. Germanium
D. Gallium-arsenide
92. ECG stands for electrocardiography
while EEG stands for?
A.
electroextracellugraphy
B. electroemyography
C.
electroencephalography
D.
electrovectorcardiograph
y
93. Acceleration transducers are also
called
A. gyros
B. force transducers
C. tachometers
D. accelerometers
94. When an SCR is combined to a switch,
it is considered as a _____ switch.
A. bidirectional
B. mechanical
C. unidirectional
D. omnidirectional
95. When the firing angle of SCR is
increased, its output
A. decreases
B. increases
C. remains unchanged
D. doubles
96. When the SCR is OFF, the current in

the circuit is
A. exactly zero
B. large leakage current
C. small leakage current
D. thermal current
97. The SCR can exercise control over
_____ of ac supply.
A. positive or negative
half-cycle
B. both positive and
negative half-cycles
C. only positive halfcycle
D. only negative halfcycle
98. What is the most widely used altitude
and altitude-rate transducers?
A. Flowmeter
B. Psychometer
C. Gyro
D. Gygrometer
99. What sensing element is typically
made from a thin-walled tube formed
into deep convolutions and sealed at one
end, whose displacement can then be
made to act on a transduction element?
A. Diaphragm
B. Bellow
C. Capsule
D. Bourdon tube
100. The voltage across an SCR when it is
turned on is about
A.0.5 V
B. 0.1 V
C. 1 V
D. 5 V
101. Referred to a bidirectional trigger
diode.
a. Triac
b. UJT
c. BJT
d. Diac
102. Voltage required to turn on any
thyristor.
a. Trigger voltage
b. Breakover voltage
c. Barrier voltage
d. Supply voltage
103. Also known as a four-layer diode.
a. Diac
b. Shockley diode
c. Zener diode
d. FET
104. The thyristor counterpart of the
unijunction transistor.
a. UJT
b. PUT
c. SBS
d. SCS
105. Minimum current required to keep a
thyristor on.
a. Holding current

b. Trigger current
c. Supply current
d. Collector current
106. A unidirectional-three terminal
device, the most popular of thyristors.
a. SCS
b. Triac
c. UJT
d. SCR
107. The angle of an AC supply voltage
during which an SCR is off.
a. Conduction angle
b. Firing delay angle
c. Right angle
d. Off angle
108. Thyristors are most often used as
a. Switches
b. Amplifiers
c. Buffers
d. Decoders
109. The total internal series resistance of
the UJT.
a. Bulks resistance
b. Total resistance
c. Interbase resistance
d. RIS
110. The most popular and typical
breakover voltage of a diac.
a. 32 V
b. 16 V
c. 8 V
d. 4 V
111. The peak voltage of a PUT is
a. VD + VBB
b. VG + VBB
c. VD + VG
d. VBB
112. A UJT has = 0.65 and is connected
to a 20 V supply. What is its VEB1?
a. 12 V
b. 13.6 V
c. 12.7 V
d. 14 V
113. The three terminal semiconductor
device that acts in either direction.
a. Triac
b. SCR
c. Diac
d. SCS
114. The P of PUT stands for
a. Programmable
b. Performance
c. Peak
d. Post
115. The terminals of a UJT are
a. Gate, Anode, Cathode
b. Anode, Cathode
c. Emitter, Base
d. Emitter, Base1, Base2
116. The lowest current that can prevent
the transition of a UJT from conduction to
blocking region.
a. Switching current

b. Emitter current
c. Valley current
d. Peak current
117. The SCS has how many gate
terminals?
a. 0
b. 1
c. 2
d. 3
118. What device has two terminals
connected in inverse-parallel that pass in
two directions?
a. Triac
b. Diac
c. Shockley
d. SCR
119. What is the breakover voltage of a
PUT if it is connected to a 15 V supply
across the gate terminal?
a. 10.7 V
b. 23.7 V
c. 15.7 V
d. 5.3 V
120. The gap between the forward
blocking region and the forward
conduction region.
a. Band gap
b. Switching region
c. Jump gap
d. Negative resistance
region
121. The cathode of the PUT is the
counterpart of which terminal in UJT?
a. Anode
b. Base2
c. Emitter
d. Base1
122. An electronic switch that has the
highest single device current capacity and
can withstand overloads better.
a. Thyratrons
b. Ignitrons
c. SCR
d. Triac
123. Group of devices with 4 or more
semiconductor layers.
a. Transistors
b. Diodes
c. Thyristors
d. Op-Amps
124. Identify which of the following is a
three layer device.
a. SCS
b. Diac
c. Triac
d. PUT
125. What device can be modeled by a
diode and two resistors?
a. BJT
b. DIAC
c. SCR
d. UJT
126. A junction that is formed by adding

controlled amounts of an impurity to the

melt during crystal growth is termed as
a. Fused junction
b. Unijunction
c. Alloy junction
d. Doped junction
127. A triac is a ______.
a. 2 terminal switch
b. 2 terminal bilateral
switch
c. 3 terminal unilateral
switch
d. 3 terminal
bidirectional switch
128. A thyristor equivalent of a thyratron
tube is _____.
a. Diac
b. Triac
c. SCR
d. PUT
129. Which of the following describes a
triac?
a. Conducts when not
triggered
b. Conducts when not
triggered in both
directions
c. Conducts when
triggered in one
direction
d. Conducts when
triggered in both
direction
130. Minimum anode current to hold a
thyristor at conduction.
a. Trigger
b. Maintaining current
c. Holding current
d. Threshold voltage
131. General term for semiconductor
devices primarily used as switches.
a. Shockley
b. Thyratron
c. Thyristor
d. Relay
132. A two-terminal, unidirectional
thyristor.
a. DIAC
b. Shockley
c. TRIAC
d. Diode
133. A thyristor is basically ______.
a. PNPN device
b. A combination of diac
and triac
c. A set of SCRs
d. A set of SCR, diac and
triac
134. What is the PNPN device with two
gates?
a. Diac
b. Triac
c. SUS

d. SCS
135. Which device incorporates a terminal
for synchronizing purposes?
a. Diac
b. Triac
c. SUS
d. SCR
136. An SCR is a _______.
a. Unijunction device
b. Device with three
junctions
c. Device with four
junctions
d. Device with two
junctions
137. A thyristor can be turned off
a. By reducing the anode
current below the
holding current value
b. By reversing the
anode voltage
c. Either a or b
d. Both a and b
138. Minimum duration of pulse
triggering system for thyristors is ________.
a. At least 10
microseconds
b. At least 30
milliseconds
c. At least 10
milliseconds
d. At least 1 second
139. A device that cannot be triggered by
voltage of either polarity is ________.
a. Diac
b. Triac
c. SCS
d. All of the above
140. Technically, what is dicing means?
a. Process of joining two
diacs
b. Circuit of reducing
noise
c. Device for reducing
magnetic and radio
interference
d. Process of breaking
the silicon slice into
chips
141. The term used to describe the
process whereby two transistors with
positive feedback are used to simulate the
action of the thyristor.
a. Arcing
b. Latching
c. Damping
d. Switching
142. It is the minimum anode current to
hold a thyristor at conduction.
a. Trigger
b. Maintaining current
c. Holding current
d. Threshold voltage

151. This device is two zener diodes connected

back to back in series and is used to support

voltage surges and transients.

143. Electron tube containing mercury

functioning as a rectifier.
a. Thyratron
b. Ignitron
c. Thyrector
d. SCR
144. How do you stop the conduction
during which the SCR is also conducting?
a. Remove voltage gate
b. Increase cathode
voltage
c. Interrupt anode
current
d. Reduce gate current
145. A series RC connected in parallel
with an SCR to eliminate false triggering is
the _______.
a. Crowbar
b. Snubber
c. Varistor
d. Eliminator
146. Which are the three terminals of a
TRIAC?
a. Gate, anode1 and
anode2
b. Gate, source and sink
c. Base, emitter and
collector
d. Emitter, base1 and
base2
147. The term used to describe the
process whereby two transistors with
positive feedback are used to simulate the
action of the thyristor.
a. Arcing
b. Latching
c. Damping
d. Switching
148. The minimum emitter to base voltage
to trigger the UJT is the ________.
a. Forward breakover
voltage
b. Trigger
c. Breakdown voltage
d. Peak voltage
149. The ratio of the emitter to base1
resistance to the interbase resistance of a
UJT is called ________.
a. Aspect ratio
b. Current gain
c. Voltage gain
d. Intrinsic standoff ratio
150. For a UJT, it is the region between
the peak and valley points as seen in its
characteristics curve.
a. Active region
b. Negative resistance
region
c. Trigger region
d. Saturation region

a. Thyristor

b. Varactor

c. Thyrector

d. Phanatron
152. Refers to the number of degrees of an AC
cycle during which the SCR is turned on.
a. Conduction angle
b. Firing delay angle

c. Induction angle

d. ON angle

153. A four-element solid state device that

combines the characteristics of a both diodes and

transistors.

a. Varactor

b. Zener diode

c. Tunnel diode
d. SCR

154. Electron tube equivalent to solid state SCR.

a. Triode
b. VTVM

c. CRT

d. Thyratron

155. Find the two stable operating conditions of

an SCR.
a. Conducting and non-conducting
b. Oscillating and quiescent

c. NPN conduction and PNP conduction

d. Forward conducting and reverse

conducting

156. How do you stop conduction during which

SCR is also conducting?
a. Remove voltage gate
b. Increase cathode voltage

c. Interrupt anode current

d. Reduce gate current

157. When an SCR is triggered or on conducting,

its electrical characteristics are similar to what
other solid-state device (as measured between
its cathode and anode)?

a. The junction diode

b. The varactor diode

c. The tunnel diode

d. The hotcarrier diode

158. Which of the following does not have a base

terminal?

a. UJT

b. PNP

c. SCR

d. NPN
159. A series RC circuit that is connected in
parallel with an SCR to eliminate false triggering.
a. Crowbar

b. Snubber

c. Varistor

d. Eliminator
160. A circuit that protects a sensitive circuit
from a sudden increase in supply voltage.

a. Crowbar

b. Snubber

c. Varistor

d. Eliminator
161. A two-terminal, bidirectional thyristor.

a. DIAC

b. Shockley

c. TRIAC
d. Diode
162. A DIAC is equivalent to inverse parallel
combination of
a. Shockley diodes
b. Schottky
c. BJT
d. SCRs
163. A TRIAC is equivalent to inverse parallel
combination of
a. Shockley
b. Schottky
c. BJT
d. SCRs
164. Which are the three terminals of a TRIAC?
a. Gate, anode1 and anode2
b. Gate, source and sink
c. Base, emitter and collector
d. Emitter, base1 and base2
165. Which device can be modeled by a diode
and two resistors?
a. BJT
b. DIAC
c. SCR
d. UJT
166. The minimum emitter to base 1 voltage to
trigger the UJT.
a. Forward breakover voltage
b. Trigger
c. Breakdown voltage
d. Peak voltage
167. The ratio of the emitter to base1 resistance
to the interbase resistance of a UJT.
a. Aspect ratio
b. Current gain
c. Voltage gain
d. Intrinsic standoff ratio
168. For UJT, it is the region between the peak
and valley points.
a. Active region
b. Negative resistance region
c. Trigger region
d. Saturation region
169. Typical breakover voltage of an SBS.
a. 2 V
b. 4 V
c. 8 V
d. 16 V
170. The trigger current is applied to the
a. Anode
b. Gate
c. Cathode
d. Base
171. The region where breakover voltage of the
SBS drops to 1 V instantaneously.
a. Falldown region
b. Fallback region
c. Breakback region
d. Breakdown region
172. The ratio of RB1 and RBB is called
a. Intrinsic standoff ratio
b. Reubers ratio

c. Common mode rejection ratio

d. Cats ratio
173. The time between the first application of
electrode force and the first application of
welding current.
a. Squeeze time
b. Weld time
c. Hold time
d. Off period
174. Process wherein coalescence is produced by
the heat obtained from the resistance of the
workpiece to the flow of low voltage, high
density electric current in a circuit.
a. Forge welding
b. Resistance welding
c. Ultrasonic welding
d. LBW
175. Time when electrode force is applied but the
current is shut off.
a. Off period
b. Hold time
c. Squeeze time
d. Weld time
176. The time when electrode force is released.
a. Hold time
b. Squeeze time
c. Off period
d. Weld time
177. The fusion of the grain structure of
materials.
a. Forge
b. Weld
c. Recombination
d. Coalescence
178. Time when current is applied to the
workpiece.
a. Weld time
b. Squeeze time
c. Hold time
d. Off period
179. Heat in resistance welding is produced by
the following factors except one
a. Time duration
b. Current
c. Electrical resistance
d. Pressure applied
180. Resistance welding machine component
that holds the workpieces.
a. Electrical circuit
b. Electrode system
c. Mechanical system
d. None of the above
181. Resistance spot welding (RSW) machine type
that is controlled by hydraulic cylinders.
a. Miniature welders
b. Rocker-arm welder
c. Press-type welder
d. Portable spot welder
182. Machine component made up of the
transformer and the current regulator.
a. Control system
b. Electrical system
c. Electrode system
d. Mechanical system
183. Welder machine with capacities up to 500
kVa

a. Miniature welders

b. Rocker-arm welder

c. Press-type welder

d. Portable spot welder

184. Regulates the time of the welding cycle.
a. Electrode

b. Current regulator

c. Control system

d. Mechanical system
185. Welding machine use for large workpieces.
a. Miniature welders
b. Rocker-arm welder

c. Press-type welder

d. Portable spot welder

186. Another name for hammer welding

a. Fusion welding

b. RW
c. Maul welding
d. Forge welding

187. Referred to as a localized coalescence

a. Weld

b. Mold

c. Cast
d. Metal
188. Part of the welding electric circuit that is
used to produce high amperage current at low

voltages.
a. Capacitor

b. Voltage regulator

c. Transformer

d. The secondary circuit

189. The overlapped RSW.
a. RSEW (Resistance Seam Welding)

b. ORSW

c. OSW

d. USW
190. Spot welding are most commonly used in
a. Ships
b. Automobiles

c. Airplanes
d. Rafts

191. The last step in welding time control.

a. Off period

b. Weld time
c. Squeeze time
d. Hold time
192. The relative maximum workpiece thickness

where spot welding can be used.

a. 0.5 in

b. 1 in.

c. 1.5 in.
d. 0.25 in.
193. Resistance welding was developed by this
man in and revolutionized the welding industry.
a. Isaac Asimov

b. Karel Capek

c. Thomas Seebeck

d. Elihu Thomson
194. The year when resistance welding was
discovered.

a. 1935

b. 1798

c. 1886

d. 1945
195. It is the fusion or growing of the materials
being together.
a. Coalition

b. Coincidence

c. Coalescense

d. Mixing
196. Arc welding requires a voltage around
_______.
a. 60 100 V
b. 150 -200 V
c. 400 440 V
d. 1000 5000 V
197. During arc welding, the current is in the
range of _______.
a. 1 5 A
b. 5 50 A
c. 50 400 A
d. 500 4000 A
198. The body structure of the car is welded by
______.
a. Gas welding
b. Spot welding
c. Induction welding
d. Arc welding
199. For inspection of welding defects in thick
metals, which of the following ray is used to
photograph thick metals objects?
a. Gamma rays
b. Cosmic rays
c. Infrared rays
d. Ultraviolet rays
200. The voltage across an SCR when it is turned
on is about
a. 0.5 V
b. 0.1 V
c. 1 V
d. 5 V
201. For an SCR, dv/dt protection is achieved
through the use of:</>
A. RL in series with SCR
B. RC across SCR
C. L in series with SCR
D. RC in series with SCR
202. A technique use to turn off a thyristor using
an external circuit which causes the anode to
become negatively biased.
A. force commutation
B. reverse triggering
C. negative feedback
D. doping
203. The turn-off time of thyristor is 30 m sec at
50C. Its turn-off time at 100 is
A. same
B. 15 m sec
C. 60 m sec
D. 100 m sec
204. The peak and valley currents of the PUT are
typically _____ those of a similarly rated UJT.
A. lower than
B. the same as
C. higher than
D. None of the above
205. What is a solid state equivalent of a gas
filled triode?
A. Triac
B. Thyristor
C. SCR

D. SCS
206. The method(s) for turning off an SCR is (are)
categorized as _____.
A. current interruption
B. forced commutation
C. both current interruption and forced
commutation
D. None of the above
207. In a certain UJT rB1 is 2.5 k and rB2 = 4 k.
What is the intrinsic standoff ratio?
A. 0.61538
B. 0.38461
C. 2.6
D. 0.8125
208. When SCR starts conducting, then _____
losses all control.
A. gate
B. anode
C. cathode
D. anode supply
209. You have the schematic diagram of several
types of circuits. Which of these circuits most
likely uses a triac?
A. an oscillator
B. an ac motor control
C. a programmable oscillator
D. an amplifier
210. Determine RB1 for a silicon PUT if it is
determined that h = 0.84, VP = 11.2 V, and RB2 = 5
k.
A. 12.65 k
B. 16.25 k
C. 20.00 k
D. 26.25 k
211. Which of the following devices does not
have a cathode terminal?
A. SCR
B. SCS
C. TRIAC
D. Shockley diode
212. The UJT operates in what region after peak
point?
A. Cut off
B. Negative resistance

C. Saturation
D. Positive resistance

213. What is basically a two-terminal parallel-

inverse combination of semiconductor layers that

permits triggering in either direction?

A. DIAC
B. TRIAC
C. QUADRAC

D. Shockley Diode

214. Which device does not have a gate

terminal?

A. Triac
B. SCR
C. FET
D. Diac
215. The four-layer devices with a control

mechanism are commonly referred to as _____.

A. thyristors

B. transistors

C. diodes
D. None of the above
216. What is that voltage above when the SCR

enters the conduction region?

A. Reverse breakover voltage

B. Forward breakover voltage

C. Holding voltage
D. Trigger voltage
217. It is a three-terminal silicon diode with the
ability to control a large ac power with a small
signal.

A. TRIAC

B. SCR
C. UJT
D. SCS
218. The smallest amount of current that the

cathode-anode can have, and still sustain

conduction of an SCR is called the:

A. maximum forward current

B. maximum forward gate current

C. holding current
D. reverse gate leakage current

219. It is the minimum additional current that

can make up for any missing input (gate) current

in order to keep the device ON.

A. leakage current
B. ac current

C. holding current
D. switching current

220. The PUT (programmable unijunction

transistor) is actually a type of:

A. UJT thyristor
B. FET device
C. TRIAC

D. SCR

221. What is the typical value of the interbase

resistance of UJTs?

A. 20 K
B. Between 4 to 4 K
C. 4 K

D. Between 4 to 10 K
222. Which of the following is a four-layer diode
with an anode gate and a cathode gate?

A. SCS

B. SCR
C. SBS
D. SUS

223. SCR is a rectifier constructed of silicon

material. Silicon is chosen because

A. it is the most abundant material

B. of its strength and ruggedness

C. it is much cheaper than any other material
D. of its high temperature and power

capabilities

224. When the temperature increases, the

intrinsic standoff ratio

A. increases
B. decreases
C. essentially constant

D. becomes zero
225. SCRs have been designed to control powers
as high as _____, with individual ratings as high

as _____ at _____.
A. 1800 MW, 10 A, 2000 V
B. 1800 MW, 2000 A, 10 V
C. 10 MW, 2000 A, 1800 V
D. 2000 MW, 10 A, 1800 V
226. An SCR is a member of what family?
A. Thyrector
B. Thyratron
C. Thyristor

D. Transistor
227. Which of the following can change the angle
of conduction in SCR?
A. Changing anode voltage
B. Changing gate voltage
C. Reverse biasing the gate
D. Changing cathode voltage
228. What is the frequency range of application
of SCRs?
A. About 10 kHz
B. About 50 kHz
C. About 250 kHz
D. About 1 mHz
229. The minimum operating voltage of the UJT is
typically _____ that of a similarly rated PUT.
A. lower than
B. the same as
C. higher than
D. None of the above
230. A UJT is sometimes called a ____ diode.
A. double-based
B. single-based
C. a rectifier
D. a switching diode
231. It is like a low current SCR with two gate
terminals.
A. UJT
B. PUT
C. SCR
D. SCS
232. What is the typical value of the reverse
resistance of SCRs?
A. 1 to 10
B. 100 to 1 k
C. 1 k to 50 k
D. 100 k or more
233. Which of the following is the normal way to
turn on a diac?
A. By breakover voltage
B. By gate voltage
C. By gate current
D. By anode current
234. In a SCR circuit, the angle of conduction can
be changed by changing
A. anode voltage
B. anode current
C. forward current rating
D. gate current
235. The function of snubber circuit connected
across the SCR is to:
A. Suppress dv/dt
B. Increase dv/dt
C. Decrease dv/dt
D. Decrease di/dt
236. An SCR is made of what material?
A. Silicon
B. Carbon
C. Germanium
D. Gallium-arsenide
237. The SCR can exercise control over _____ of
ac supply.
A. positive or negative half-cycle
B. both positive and negative half-cycles

C. only positive half-cycle

D. only negative half-cycle
238. Which of the following conditions is
necessary for triggering system for thyristors?
A. It should be synchronized with the main
supply
B. It must use separate power supply
C. It should provide a train of pulses
D. None of these
239. A normally operated SCR has an anode
which is _____ with respect to cathode.
A. negative
B. positive
C. at zero potential
D. at infinite potential
240. Which of the following devices has (have)
four layers of semiconductor materials?
A. Silicon-controlled switch (SCS)
B. Gate turn-off switch (GTO)
C. Light-activated silicon-controlled rectifier
(LASCR)
D. All of the above

241. How many pn junction does SCRs have?

A. Two
B. Four

C. Three

D. Five

242. The silicon-controlled switch (SCS) is similar

in construction to the
A. triac.

B. diac.

C. SCR.
D. 4-layer diode.

243. Which of the following devices has nearly

the same turn-on time as turn-off time?
A. SCR

B. GTO

C. SCS

D. LASCR

244. Which of the following is (are) the

advantages of the SCS over a corresponding SCR?

A. Reduced turn-off time

B. Increased control and triggering sensitivity
C. More predictable firing situation

D. All of the above

245. An effect that reduces the possibility of

accidental triggering of the SCS.
A. Miller effect

B. Rate effect

C. End effect

D. Flywheel effect

246. An SCR whose state is controlled by the light

falling upon a silicon semiconductor layer of the
device.
A. SCS

B. GTO
C. Thyristor

D. LASCR

247. Power electronics deals with the control of

ac power at what frequencies essentially?
A. 20 KHz
B. 1000 KHz

C. Frequencies less than 10 Hz

D. 60 Hz frequency

248. To turn on the UJT, the forward bias on

emitter diode should be _____ the peak point
voltage.
A. more than

B. less than
C. equal to
D. twice

249. What is the resistance of a certain 4-layer

diode in the forward-blocking region if VAK = 15V
and IA = 1 uA

A. 15
B. 21.21 M
C. 15 M

D. 10.61 M

250. What is the peak-point voltage for the UJT in

problem 76 if VBB = 15V?

A. 10.605

B. 5.76912
C. 6.46915
D. 0.8125

251. The SCR is turned-off when the anode

current falls below

A. forward current rating

B. breakover voltage
C. holding current
D. latching current
252. When an SCR is combined to a switch, it is

considered as a _____ switch.

A. bidirectional

B. mechanical
C. unidirectional
D. omnidirectional
253. The p-type emitter of a UJT is _____ doped

A. lightly

B. moderately

C. heavily

D. not
254. An SCR is a _____ triggered device.
A. current
B. power

C. voltage

D. noise

255. Anode current in a thyristor is made up of:

A. Electrons only
B. Electrons or holes
C. Electrons and holes
D. Holes only
256. Once a DIAC is conducting, the only way to
turn it off is with:

A. a positive gate voltage

B. a negative gate voltage

C. low-current dropout
D. breakover

257. The V-I characteristics for a triac in the first

and third quadrants are essentially identical to
those of _____ in the quotation.

A. SCR
B. UJT
C. Transistor
D. SCS
258. To turn off the SCR, which of the following is
done?
A. Reduce gate voltage to zero
B. Reverse bias the gate
C. Reduce anode voltage to zero
D. Reduce cathode voltage to zero
259. Your boss has asked you to recommend a
thyristor that will enable you to turn it on with a

pulse and also turn it off with a pulse. Which of

the following should you recommend?
A. an SCR
B. an SCS
C. a PUT
D. a triac
260. The current from that semiconductor device
when it is reversed biased.
A. maximum forward current
B. maximum forward gate current
C. holding current
D. leakage current
261. What is the range of the turn-on times in
high-power SCR devices?
A. 30 s to 100 s
B. 10 s to 25 s
C. 5 s to 8 s
D. 1 s to 5 s
262. You need to design a relaxation oscillator
circuit. The most likely device to use might be
A. an SCR.
B. a UJT.
C. a triac.
D. a 4-layer diode.
263. The ________ can be externally
programmed to turn on at a desired anode-togate voltage level.
A. UJT
B. PUT
C. SCR
D. SCS
264. It is the minimum current which must pass
through a circuit in order for it to remain in the
'ON' state.
A. leakage current
B. ac current
C. holding current
D. switching current
265. What is that value of current below which
the SCR switches from the conduction state to
the forward blocking region under stated
conditions?
A. Holding current
B. Forward current
C. Reverse current
D. Trigger current
266. A diac is turned on by
A. breakover voltage
B. gate current
C. gate voltage
D. anode current
267. You have a light-dimmer circuit using an
SCR. In testing the circuit, you find that IG = 0 mA
and the light is still on. You conclude that the
trouble might be one of the following:
A. the SCR is open.
B. the switch is faulty.
C. the gate circuit is shorted.
D. this is normal; nothing is wrong.
268. Which equation defines the intrinsic
standoff ratio () of UJTs?
A. RB1 / (RB1 + RB2)
B. (RB1 + RB2) / RB1

C. (RB1 + RB2) / RB2

D. RB1 + RB2
269. The voltage across an SCR when it is turned
on is about

A. 0.5 V

B. 0.1 V

C. 1 V
D. 5 V
270. The typical turn-off time of an SCR is about

A. 20 to 40 s

B. 5 to 40 s
C. 1 to 5 s
D. 15 to 25 s

271. Which of the following devices has the

smallest turn-off time?
A. SCR

B. GTO
C. SCS
D. LASCR

272. A triac is equivalent to two SCRs

A. in parallel

B. in inverse-parallel

C. in series
D. in inverse-series
273. It is the phase angle relative to the power

line at which point the gate is fired to commit the

anode to conduct to the cathode

A. right angle
B. reverse angle

C. conduction angle
D. firing angle
274. It is the total resistance of the silicon bar
from one end to another with emitter terminal
open.

A. gate resistance

B. base resistance
C. emitter resistance

D. interbase resistance

275. Holding current of a thyristor is:

A. Less than latching current

B. More than latching current

C. Equal to latching current

D. Zero
276. An SCR is a solid state equivalent of which
tube?
A. Triode

B. Gas-filled triode

C. Pentode

D. Tetrode
277. What is the typical turn-on time of an SCR?
A. 1 s

B. 5 s

C. 10 s
D. 3 s

278. An SCR is a solid state equivalent of which

tube?
A. Triode
B. Gas-filled triode

C. Pentode

D. Tetrode
279. It is a special type of thyristor, which is a
high-power semiconductor device but are fully
controllable switches which can be turned on and
off by their third lead.

A. PUT

B. MCT
C. SCS

D. GTO

280. When the temperature increases, the inter-

base resistance of a UJT
A. Remains unchanged
B. Increases

C. Decreases

D. is zero

281. When checking a good SCR or TRIAC with an

ohmmeter it will:
A. show high resistance in both directions

B. show low resistance with positive on

anode and negative on cathode, and high

resistance when reversed

C. show high resistance with negative on

anode and positive on cathode, and low
resistance when reversed
D. show low resistance in both directions

282. The UJT may be used as

A. an amplifier

B. a rectifier

C. a sawtooth generator
D. a multivibrator
283. A resistor connected across the gate and
cathode of an SCR in a circuit increases its

A. dv/dt rating

B. Holding current

C. Noise Immunity
D. Turn-off time
284. AC power in a load can be controlled by
connecting

A. two SCRs in series

B. two SCRs in parallel

C. two SCRs in parallel opposition

D. two SCRs in series opposition

285. An SCR combines the feature of
A. a rectifier and resistance

B. a rectifier and capacitor

C. a rectifier and transistor

D. a rectifier and inductor

286. It is voltage-controlled fully

controllable thyristor similar in operation with
GTO but it has a voltage controlled insulated
gate.
A. PUT

B. MCT

C. UJT

D. MGT
287. The three terminals of a triac are
A. drain, source, gate
B. two main terminals and a gate terminal
C. cathode, anode and gate
D. anode, source, gate
288. A triac can pass a portion of _____ half cycle
through the load
A. only positive
B. only negative
C. both positive and negative
D. neither positive nor negative
289. When the SCR is OFF, the current in the
circuit is
A. exactly zero
B. large leakage current
C. small leakage current

D. thermal current
290. What is a three terminal device used to
control large current to a load?
A. SCR
B. SCS
C. GTO
D. Thyristor
291. What Greek word which means switch?
A. Ristor
B. Trans
C. Thy
D. Thyristor
292. The ________ can conduct current in either
direction and is turned on when a breakover
voltage is exceeded.
A. SCR
B. Diac
C. SCS
D. Triac
293. A resistor connected across the gate and
cathode of an SCR increases its:
A. Turn off time
B. Holding current
C. Noise immunity
D. dv/dt rating
294. Like an SCR, it is also a four layer device but
with a gate connected to the N-region adjacent
to the anode.
A. TRIAC
B. PUT
C. DIAC
D. SCS
295. An SCR is made of silicon and not
germanium because silicon.
A. is inexpensive
B. has low leakage current
C. is mechanically strong
D. is tetravalent
296. The triac is fundamentally a/an _____ with a
gate terminal for controlling the turn-on
conditions of the bilateral device in either
direction.
A. SCR
B. Quadric
C. Shockley Diode
D. Diac
297. An opto-isolator contains _____.
A. an infrared LED
B. a photodetector
C. both an infrared LED and a photodetector
D. None of the above
298. Which of the following devices is
unquestionably of the greatest interest today?
A. SCR
B. GTO
D. LASCR
D. SCS
299. In a UJT maximum value of charging
resistance is associated with:
A. Peak point
B. Valley point
C. Any point between peak and valley point
D. After the valley point

300. When the firing angle of SCR is increased, its

output- Ans. A. decreases