Basic 2

Anisotropic Wet-etching
of Silicon: Characterization and
Modeling of Changeable
py
Anisotropy
Prof K.
Prof.
K Sato

Dept. of Micro/Nano Systems Engineering

Nagoya University
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Orientation Dependent Etching

(Conventional Products)

110
111
112
100

SiO2

111

Si
Diaphragm
Deep grooves on a (110) wafer

Diaphragm on a (100) wafer

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Variation in etching profile on (100) silicon wafer

Groove Wall Orientations

(111)
(100)
(110)
KOH
TMAH
EDP

KOH
TMAH

KOH/IPA
TMAH/ f t t
TMAH/surfactant
EDP

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Variation in etching profile on (110) silicon wafer

(111)
KOH
TMAH
EDP

Groove Wall Orientations

(111)
(100)
KOH
TMAH
EDP

KOH
TMAH

(110)
KOH/IPA
TMAH/surfactant
EDP

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Non-conventional 3-D microstructures

using KOH anisotropic etching

Etching from both sides of a wafer

Two step etching using two mask layers

Two-step

K. Sato, et al, Proc. IFToMM Intl. Micromechanism Symp. (Tokyo, 1993.6) 155-160

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Densely Arrayed Silicon Needles with a Pitch Distance of

200 microns Aiming at Transdermal Drug Delivery
M Shikida et al.:Proc.
M.
al :Proc MEMS-03
MEMS 03 (Kyoto
(Kyoto, 2003)
2003), 562

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

New types of anisotropically etched 3-D structures: Curved,

Sharp-cornered, 45-degree-angled V-grooves
Prem Pal: Jpn. J. Appl. Phys. 49 (2010)056702

[
[110]
]

[100]
[

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

110

Anisotropic chemical etching of Si

from MEMS Point of View

Etching Solutions
KOH, TMAH, EDP, N2H4, NaOH, CsOH, etc.
Chemical
Ch i l reaction
ti
Si + 2OH- + 2H2O
2 + 2H
Si(OH)4 + H2 SiO2(OH)222
What are known;
Si (111) shows an extremely low etch rate
rate.
Etch-stop techniques: B-dope, Electro-chemical,
etc.
Applications
Diaphragms, V-grooves,
V grooves, Cantilevers
---Limitations in fabricated shapes

Many mysteries

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Sequential reactions of Si etching

in alkaline solution

Si + 2OH- + 2H2O
SiO2(OH)22- + 2H2
This is the results off the following
f
steps.
(R. A. Wind, M.A. Hines, Surface Science 460 (2000) 21-38)

SiH2 + OH- + H2O SiHOH+ H2 + OHSiHOH + OH- + H2O Si(OH)2+ H2 + OH( Si)2Si(OH)
(Si)
Si(OH)2 + H2O (Si-H)Si(OH)
( Si H) Si(OH)4
Si(OH)
(
)4 + OH- SiO2 ((OH))22-+ H2 O

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Contents
Characterization of Anisotropic Etching
in macroscopic domains
Dangling-Bond Model does not tell the truth,
because no dynamics
y
included.
Step Flow Model explains anisotropy in the
vicinity of Si (111)
*Reversed
*R
d anisotropy
i t
between
b t
KOH and
d TMAH
*Etched shape
p clearly
y reflects atomic-step
p
behavior in the vicinity of Si (111)
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Contents
Characterization of Anisotropic Etching
in macroscopic domains
D
Dangling-Bond
li
B dM
Model
d l does
d
nott tell
t ll the
th truth,
t th
because no dynamics included.
Step Flow Model explains anisotropy in the
c ty o
of S
Si ((111))
vicinity
*Reversed anisotropy between KOH and TMAH
*Etched shape clearly reflects atomic-step
behavior in the vicinity of Si (111)
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Etching rate measurement

K. Sato et al.: Sensors and Actuators A-64 (1998) 87-93.

(110)

contact probe

R = 22 mm
R

probing network

( )
(001)
(110)
Hemispherical specimen of single-crystal silicon
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Hemispherical specimen

Before

After

Maximum etching depth: 100 - 150 m

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Etching rate contour map for a KOH solution

K. Sato et al.: Sensors and Actuators A-64 (1998) 87-93.

(100)
90

(111)
(110)

60

0
30
30

(110)

90
0
0

30

(100)

60

90
min

max

NAGOYA UNIVERSITY
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Effects of a surfactant added to TMAH solution

K. Sato et al.: Sensors and Materials 13-5 (2001) 285-291.

(010)

(010)

90

(111)

90

(110)

(110)

60

60

30

30

(100)

(001)

00

30
30

60
60

90
90

(100)

(001)

0
0

30
30

60
60

min

25%TMAH + NCW

25%TMAH

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

90
90

max

Poly-oxiethylene-alkyl-phenyl-ether

C9H19

Hydrophobic

O(CH2CH2O)nH

Hydrophilic

Liquid easy to operate with little foaming

Stable
S bl both
b h in
i acid
id andd alkaline
lk li solutions
l i

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Etch ratte ratio oof {i j kk}/{100}}

Orientation-dependent effects of surfactant

decreasing etch rates of silicon
2.500

25%TMAH (without surfactant)

2.000

1.500

1.000

25%TMAH+2%NCW

0.500

0.000
{100} {310} {210} {530} {320} {540} {110} {331} {221} {111} {211} {311} {100}

Orientations
K. Sato, et al., Sensors and Materials 13-5 (2001) 285-291.

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Mask-corner undercut suppression

K. Sato, et al., Sensors and Materials 13-5 (2001) 285-291.

Effects of the surfactant NCW

Orientations appearing on a vertex:
(111) - ( j j 1 ) - (110)

25 wt.% TMAH, 80 C
Etching depth: 50 m

{111}

without NCW
{100}

{110}

{110}

with
ih
2 wt.% NCW

300 m
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Comparison of Structure Shape Etched

from Same Mask Apertures
Prem Pal, J. Micromech. Microeng. 17 (2007) 22992307

<110>

<110>
Etch depth = 35 m
( )
(a)

( )
(c)

(b)

(d)

Pure 25 wt% TMAH

(a)

(b)

(d)

(c)

25 wt% TMAH + NC-200

T-Shaped
cantilever

Circular
island

Cross
island

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Cross
aperture

Etching rate
database
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Anisotropic etching
simulation system
MICROCAD
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Simulation results using MICROCAD

K Sato
K.
Sato, et al
al., Electronics and Communications in Japan,
Japan Part2
Part2, 83
83-4
4 (2000)
(2000).
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Simulation results using MICROCAD

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Simulation results using MICROCAD

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Densely Arrayed Silicon Needles with a Pitch Distance of

200 microns for Transdermal Drug Delivery
M. Shikida et al. Sensors and Actuators A 116 (2004) 264271

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Arrayed Needle Fabrication Process:

Combination of mechanical dicing and wet etching
M. Shikida et al. J. Micromech. Microeng. 14 (2004) 14621467

Etching time: (a) 0 min.

(b) 10 min.

(d) 30 min.
i

(c) 20 min.

( ) 40 min.
(e)
i

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

MICROCAD Simulation Results.

Etching time: (a) 0 min., (b) 5 min., (c) 10 min.,
(d) 15 min., (e) 20 min., (f) 25 min.
Et hi conditions:
Etching
diti
34
34.0
0 wt.%
t % KOH
KOH, 80oC
(a)

(d)

(b)

(c)

(e)

(f)

M Shikida,
M.
Shikida et al,
al JJ. Micromech.
Micromech Microeng.
Microeng 14 (2004) 1462
14621467
1467
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Etched deep grooves on (110) Si

using a KOH water solution

Groove depth:
90 microns

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

KOH and TMAH show different types of anisotropy

K. Sato, et al.: Sensors and Actuators A-73 (1999) 131-137.

TMAH: 25%, 90C

(010)
90

KOH: 40%, 90C

90
(110)

(430)

60

60

(011)
30

0
0
(001) 0

30

30 (101) 60

( 00)
(100)
90

00
0

30

60

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

90

Relation between the etching rate distribution

and etched profile
Etching rate distribution

1.0
Etch rate (m
m/min)

Etch rate (m
m/min)

1.5

10
1.0

0.5

0
-90
(111)

0
(110)

90
(111)

0.5

0
-90
(111)

(311)

0 (311)
(110)

90
(111)

Etched profile analyzed using Wulff-Jaccodine method

Etch rate vector
(111)
(110)

Si

25% TMAH (86C)

40% KOH (70C)

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Contents
Characterization of Anisotropic Etching
in macroscopic domains
D
Dangling-Bond
li
B dM
Model
d l does
d
nott tell
t ll the
th truth,
t th
because no dynamics included.
Step Flow Model explains anisotropy in the
c ty o
of S
Si ((111))
vicinity
*Reversed anisotropy between KOH and TMAH
*Etched shape clearly reflects atomic-step
behavior in the vicinity of Si (111)
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Conventional Explanation of Anisotropy in Etching

Hypothesis: Number of dangling bond appearing on the
silicon surface determines the etching rate
z

x
z

(110)

(100)

Dangling bond2
Back bond2

Dangling bond1
Back bond3

Dangling bond1 +(2)

Exposed
d back
b k bbond2
d
Back bond3

(111)

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Step Flow Model for (111) Silicon

M. Elwenspoek, J. Electrochem. Soc. 140-7 (1993) 2075-80

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Two types of stable steps on Si (111) surface

(Mono-hydride and Di-hydride steps)

M A Gosalvez
M.A.
Gosalvez, et al.
al J.
J Micromech.
Micromech Microeng
Microeng. 17 (2007) S1
S1S26
S26
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Step movements determine profiles of

pits and mesa on (111) silicon surface

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Atomic level etching simulation

in the vicinity of Si (111)
M.A. Gosalvez, et al. J. Micromech. Microeng. 17 (2007) S1S26

(110)

(111)

(001)

Pit-nucleation and Step-propagation

100 nm
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Our concern
IIs the
th atomic
t i scale
l step
t flow
fl
model
d l
applicable
pp
to macroscopic
p etching?
g
Etching solutions: KOH, TMAH
Et hi depth:
Etching
d th tens
t
off micrometers
i
t

Does the number of dangling bonds

determine the activeness of the surfaces or
steps?

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Contents
Characterization of Anisotropic
p Etching
g
in macroscopic domains
Dangling-Bond
Bond Model
Model does not tell the truth,
truth
Dangling
because no dynamics included.
Step Flow Model explains anisotropy in the
y of Si ((111))
vicinity
*Reversed
Reversed anisotropy between KOH and TMAH
*Etched shape clearly reflects atomic-step
b h i in
behavior
i the
th vicinity
i i it off Si (111)
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Etch Pit Growth on (111) Silicon.

K. Sato, et al.: Sensors and Materials 15-2 (2003) 93-99.

Growth of individual pit traced during TMAH etching

etching.

10

Optical microscope
images with time
increments

Wafer p
preparation
p
Oxidization
for 20 hours (3m thick oxide)
followed by oxide removal using HF.

20

30

etching condition25%TMAH,
8030min

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

AFM image at the center of a pit

etched with TMAH solution

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Comparison in the shape of etch pits between

KOH and TMAH
K. Sato, et al.: Sensors and Materials 15-2 (2003)
40%KOH 7030
25%TMAH 8030
[ 1 1 2]
[-1-1

[1 11-2]
2]

[-1-1 2]

[1 1-2]

Top
View

100m

0.50

0.6
0.4

0.25

0.2

0.00

-0.2

-0.25

Etching time: 10 min

Etching time: 20 min
Etching time: 30 min

-0.50
-0.75
0 75
-1.00

Etch pit depth (m

E
m)

CrossSection

Ettch pit depth (m

m)

0.0
-0
0.4
4
-0.6
-0.8
-1.0
-1.2

Etching time: 10 min

-1.4
-1.6

Etching time: 20 min

-1.8

Etching time: 30 min

-2.0
-2.2

-1.25
0.00

0.05

0.10
0.15
Distance (mm)

0.20

0.25

-2.4
0.0

0.1

0.2

Distance (mm)

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

0.3

0.4

Step movements determine profiles of

pits and mesa on (111) silicon surface

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Differently oriented etch pit growth governed

by the difference in activated step

KOH

TMAH

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Difference in Etching Rate Contour Map

between KOH and TMAH
(010)

90

(111)

(010)

90

(111)

(110)
60

(110)

60

(011)
30

30

(001)

(100)

0
0

30

60
(101)

KOH40%70

90

(001)

(100)

0
0

30

60
(101)

90

TMAH25%80

KOH: Etch rate sharply increases by misorientation toward [1 1-2]

TMAH: Etch rate sharply increases by misorientation toward [-1-1 2]

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

min

max

Contents
Characterization of Anisotropic Etching
in macroscopic domains
Dangling Bond Model
Model does not tell the truth,
truth
Dangling-Bond
because no dynamics included.
St Fl
Step
Flow M
Model
d l explains
l i anisotropy
i t
in
i the
th
vicinity of Si (111)
*Reversed
Reversed anisotropy between KOH and TMAH
*Etched shape clearly reflects atomic-step
behavior in the vicinity of Si (111)

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Step Flow Model for (111) Silicon

M. Elwenspoek, J. Electrochem. Soc. 140-7 (1993) 2075-80

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Difference in surface structure depending

on a direction of deviation from silicon (111)

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Etched deep grooves on (110) Si

using a KOH water solution

Groove depth:
90 microns

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Asymmetric increase in etching rate by

angular deviation from (111) orientation
(110)
(-11-1)

(-112)

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Step movements determine profiles of

pits and mesa on (111) silicon surface

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Answers to the questions

Is the atomic scale step flow model applicable

to macroscopic etching?
YES, in the vicinity of (111)
Does the number of dangling bond determine
the activeness of the surfaces or steps?
NO
(neither of the surface
surface, nor of steps)

Basic 2 Anisotropic Wet-etching of Silicon:

Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

Contents
Characterization of Anisotropic Etching
in macroscopic domains
D
Dangling-Bond
li
B dM
Model
d l does
d
nott tell
t ll the
th truth,
t th
because no dynamics included.
Step Flow Model explains anisotropy in the
c ty o
of S
Si ((111))
vicinity
*Reversed anisotropy between KOH and TMAH
*Etched shape clearly reflects atomic-step
behavior in the vicinity of Si (111)
Basic 2 Anisotropic Wet-etching of Silicon:
Prof. K. Sato
Characterization and Modeling of Changeable Anisotropy
COE for Education and Research of Micro-Nano Mechatronics, Nagoya University

References
Etch mechanisms and characterization
R.A. Wind and M.A. Hines, Surface Science 460 (2000) 21-38.
p
, J. Electrochem. Soc. 140-7 ((1993)) 2075-80.
M. Elwenspoek,
M.A. Gosalvez, et al., J. Micromech. Microeng. 17 (2007) S1S26.
K. Sato, et al., Sensors and Actuators A-64 (1998) 87-93.
K. Sato, et al., Sensors and Actuators A-73 (1999) 131-137.
K. Sato, et al., Sensors and Materials 15-2 (2003) 93-99.
Effects of surfactant
K. Sato, et al., Sensors and Materials 13-5 (2001) 285-291.
Prem Pal, J. Micromech. Microeng. 17 (2007) 22992307.
Prem Pal, et al, J. MEMS 18-6 (2009) 1345-1356.
M.A. Gosalvez, et al., J. Micromech. and Microeng. 19-12 (2009) #125011.
P
Prem
P l ett al.,
Pal,
l Jpn.
J
J Appl.
J.
A l Phys.
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COE for Education and Research of Micro-Nano Mechatronics, Nagoya University