MOSFET transistor exercises

N-Channel MOSFET Enhancement Mode

This is the most popular MOSFET found in gaming and
most digital industries. A positive going voltage on the Gate turns
the channel on. This is similar to an NPN transistor. We just don't
have to drive Base current.
For the exercise start with the pot at the lowest point (0
Volts), and note Drain voltage, Drain current, Gate current,
effective gate resistance and effective Drain to Source resistance.
Increase the Gate voltage in increments of 100 mV and repeat the
process of taking readings.
Chart the results on a graph.
As the gate voltage increased the transistor started
conducting. The channel resistance is a function of Gate voltage.
Each different type of N-MOSFET transistor will have a different
characteristic of some sort.
Gate current was almost nothing. Gate resistance is
very high and does not change significantly, but does change
slightly as our gate voltage increases.
Channel resistance varies with Gate voltage and also
varies with Drain load. At higher currents channel resistance can
attain lower resistances. Channel resistance is one of the main
selection criteria when making substitutes for MOSFET
transistors.
The pinouts shown are typical but may change from
one device to another. Don't rely on the general comment to be
true. Check your data sheet before making any assumptions about pinouts.

P-Channel MOSFET Enhancement Mode

This is the next most popular MOSFET found in gaming and most digital industries. A ground on
the Gate turns the channel on. This is similar to a PNP transistor. We just don't have to drive Base current.
For the exercise start with the pot at the highest point (+ Volts), and note Drain voltage, Drain
current, Gate current, effective gate resistance and effective Drain to Source resistance. Decrease the Gate
voltage in increments of 100 mV and repeat the process of taking readings.
Chart the results on a graph.
<need the picture of the P_MOSFET exercise>
As the gate voltage decreased the transistor started conducting. The channel resistance is a
function of Gate voltage. Each different type of P-MOSFET transistor will have a different characteristic of
some sort.
Gate current was almost nothing. Gate resistance is
very high and does not change significantly, but does change
slightly as our gate voltage increases.
Channel resistance varies with Gate voltage and also
varies with Drain load. At higher currents channel resistance
can attain lower resistances. Channel resistance is one of the
main selection criteria when making substitutes for MOSFET
transistors.
The pinouts shown are typical but may change from
one device to another. Don't rely on the general comment to be true. Check your data sheet before making
any assumptions about pinouts.

N-Channel MOSFET Depletion Mode

These are not real popular in the gaming industry. A positive going voltage on the Gate turns the
channel off. This is similar to a Junction N-channel FET.
For the exercise start with the pot at the
highest point (+ Volts), and note Drain voltage, Drain
current, Gate current, effective gate resistance and
effective Drain to Source resistance. Increase the Gate
voltage in increments of 100 mV and repeat the process
of
taking readings.
Chart the results on a graph.
As the gate voltage decreased the transistor
started conducting. Not this in contrast to the
Enhancement mode devices. In Enhancement mode
devices as we apply a gate voltage the channel
conduction is Enhanced (more conduction). In
Depletion Mode devices as we apply a voltage
channel conduction is reduced due to a
depleting of current carriers. The channel
resistance is a function of Gate voltage. Each
different type of N-MOSFET transistor will
have a different characteristic of some sort.
Gate current was almost nothing.
Gate resistance is very high and does not
change significantly, but does change slightly
as our gate voltage increases.
Channel resistance varies with Gate
voltage and also varies with Drain load. At
higher currents channel resistance can attain
lower resistances. Channel resistance is one of
the main selection criteria when making
substitutes for MOSFET transistors.
The pinouts shown are typical but
may change from one device to another. Don't
rely on the general comment to be true. Check
your data sheet before making any
assumptions about pinouts.

P-Channel Depletion Mode MOSFET

This is the not very popular in the gaming. A positive going voltage on the Gate turns the channel
on. This is similar to an NPN transistor. We just don't have to drive Base current.
For the exercise start with the pot at the lowest point (0 Volts), and note Drain voltage, Drain
current, Gate current, effective gate resistance and effective Drain to Source resistance. Increase the Gate
voltage in increments of 100 mV and repeat the process of taking readings.
Chart the results on a graph.
As the gate voltage increased the transistor started conducting. The channel resistance is a function
of Gate voltage. Each different type of N-MOSFET transistor will have a different characteristic of some
sort.
Gate current was almost nothing. Gate resistance is very high and does not change significantly,
but does change slightly as our gate voltage increases.
Channel resistance varies with Gate voltage and also varies with Drain load. At higher currents
channel resistance can attain lower resistances. Channel resistance is one of the main selection criteria
when making substitutes for MOSFET transistors.
The pinouts shown are typical but may change from one device to another. Don't rely on the
general comment to be true. Check your data sheet before making any assumptions about pinouts.