AOD413A

40V P-Channel MOSFET

General Description

Features

The AOD413A uses advanced trench technology and

design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.

VDS (V) = -40V

(VGS = -10V)
ID = -12A
RDS(ON) < 44m (VGS = -10V)
RDS(ON) < 66m (VGS = -4.5V)
100% UIS Tested
100% Rg Tested

TO252
DPAK
Top View

D
Bottom View

D
D
G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TC=25C

Continuous Drain
Current B,H
Pulsed Drain Current

TC=100C

Avalanche Current C

Power Dissipation B

20

TA=70C

Alpha & Omega Semiconductor, Ltd.

IDM

-30

IAR

-20
mJ

20
25

2.5
1.6
-55 to 175

TJ, TSTG

Symbol
t 10s
Steady-State
Steady-State

50

PDSM

Junction and Storage Temperature Range

Maximum Junction-to-Case F

-12

PD

TC=100C

Thermal Characteristics
Parameter
A,G
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Ambient

ID

EAR

TA=25C
Power Dissipation A

Units
V

-12

Repetitive avalanche energy L=0.1mH

TC=25C

Maximum
-40

RJA
RJC

Typ
16.7
40
2

Max
25
50
3

Units
C/W
C/W
C/W

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AOD413A

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID= -250A, VGS=0V

-40
-1
TJ=55C

-5

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID= -250A

-1.7

ID(ON)

On state drain current

VGS= -10V, VDS= -5V

-30

100

VGS= -10V, ID= -12A

Static Drain-Source On-Resistance

TJ=125C

22

Diode Forward Voltage

IS= -1A,VGS=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge

-0.76

900
VGS=0V, VDS= -20V, f=1MHz

VGS= -10V, VDS= -20V,

ID= -12A

Units

A
nA
V
A

66

VSD

Rg

44
65

IS

Output Capacitance

36
52

VDS= -5V, ID= -12A

Reverse Transfer Capacitance

-3

52

Forward Transconductance

Coss

-2

VGS= -4.5V, ID= -8A

gFS

Crss

Max

VDS= -40V, VGS=0V

VGS(th)

RDS(ON)

Typ

m
S

-1

-12

1125

pF

97

pF

68

pF

14

16.2

21

nC

7.2

9.4

nC

Qgs

Gate Source Charge

Qgd
tD(on)
tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

IF= -12A, dI/dt=100A/s

Qrr

Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/s

13.8

3.8

nC

Gate Drain Charge

3.5

nC

Turn-On DelayTime

6.2

ns

Body Diode Reverse Recovery Time

VGS= -10V, VDS= -20V, RL=1.6,

RGEN=3

8.4

ns

44.8

ns

41.2

ns

21.2

ns
nC

A: The value of RJA is measured with the device in a still air environment with T A =25C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
-20
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
20
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted
to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April 2011
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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AOD413A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

30

VDS= -5V

-4.5V

-10V

25

25
-4.0V

20
-ID(A)

-ID (A)

20
15

15

-3.5V
10

10

125C
VGS= -2.5V

25C

0
0

1.5

-VDS (Volts)
Figure 1: On-Region Characteristics

2.5

3.5

4.5

-VGS(Volts)
Figure 2: Transfer Characteristics

70

1.8

60

Normalized On-Resistance

65

RDS(ON) (m )

VGS= -4.5V

55
50
45
40

VGS= -10V

35
30

1.6
VGS= -10V
ID= -12A

1.4
1.2

VGS= -4.5V
ID= -8A

1
0.8
0.6

10

15

20

-60

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

-30

30

60

90

120

150

180

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

120

100
ID= -12A
10

-20
20

100

80

-IS (A)

RDS(ON) (m )

125C
60

0.1

125C
25C

0.01
0.001

25C
40

0.0001
0.00001

20
3

10

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-vSD (Volts)
Figure 6: Body-Diode Characteristics

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AOD413A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1200

10
VDS= -20V
ID= -12A

1000
Capacitance (pF)

-VGS (Volts)

Ciss

800
600
400
Coss

Crss

200
0

0
0

10

12

14

16

18

10

15

20

25

35

40

10000

100

TJ(Max)=175C
TC=25C

10s
RDS(ON)
limited

10

100s
1000
1ms
10ms
DC

Power (W)

-ID (Amps)

30

-VDS (Volts)
Figure 8: Capacitance Characteristics

Qg (nC)
Figure 7: Gate-Charge Characteristics

TJ(Max)=175C
TC=25C

0.1
0.1

10

10
0.00001

100

-VDS (Volts)

Z Jc Normalized Transient
Thermal Resistance

D=Ton/T
TJ,PK=Tc+PDM.ZJC.RJC
RJC=3C/W

0.0001

0.001

0.01

0.1

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased

Safe Operating Area (Note F)

10

100

In descending order
-20pulse
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single

20

PD

0.1

Ton
Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

T
1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

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AOD413A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20

50
-Current rating ID(A)

Power Dissipation (W)

60

40
30
20

15

10

10
0

0
0

25

50

75

100

125

150

175

TCASE (C)
Figure 12: Power De-rating (Note B)

25

50

75

100

125

150

175

TCASE (C)
Figure 13: Current De-rating (Note B)

1000

Power (W)

TJ(Max)=150C
TA=25C

100

10

1
0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

Z JA Normalized Transient
Thermal Resistance

10

150
-20
20

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1

0.1
PD
0.01

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=50C/W

Single Pulse
0.001
0.00001

0.0001

0.001

0.01

0.1

Ton

10

100

1000

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

Alpha & Omega Semiconductor, Ltd.

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AOD413A

Gate Charge Test Circuit & Waveform

Vgs
Qg
-10V

VDC

VDC

Qgs

Vds

Qgd

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds

toff

ton
td(on)

Vgs

DUT

Vgs

td(off)

tr

tf

90%

Vdd

VDC

Rg

Vgs

10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2

EAR= 1/2 LIAR

Vds
Vds

Id

Vgs

Vgs

VDC

Rg

BVDSS
Vdd
Id
I AR

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT
Vgs

Vds Isd

Vgs
Ig

Alpha & Omega Semiconductor, Ltd.

-Isd

+ Vdd

t rr

dI/dt
-I RM
Vdd

VDC

-I F

-Vds

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