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I. INTRODUCTION
(a)
(b)
Fig. 1. Degradation of pMOSFETs induced by PBTS and NBTS. (a) Effects
of PBTS (200 C, 4 MV/cm, 10 min) on the transfer characteristics of
pMOSFETs. AFresh sample; BPost-PBTS. (b) Effects of NBTS (200
C, 4 MV/cm, 10 min), followed by PBTS (200 C, 4 MV/cm, 2 min), on
the transfer characteristics of pMOSFETs. AFresh sample; BPost-NBTS
and pre-PBTS; CPost NBTS and PBTS.
AND
DISCUSSIONS
A. General Features
After a pMOSFET is stressed at 200 C under an electrical
field of 4 MV/cm for 10 min, its transfer characteristics at
117
118
(a)
(b)
Fig. 2. Degradation of nMOSFETs induced by PBTS and NBTS. (a) Effects
of PBTS (200 C, 4 MV/cm, 10 min) on the transfer characteristics of
nMOSFETs. AFresh sample; BPost-PBTS. (b) Effects of NBTS (200
C, 4 MV/cm, 10 min) on the transfer characteristics of nMOSFETs.
AFresh sample; BPost-NBTS.
0
at different
has the similar qualitative behavior. The
measured at three different drain current levels is plotted
against the PBTS time in Fig. 3 and against the effective
channel length in Fig. 4. In both cases, the
recorded
at different
exhibits similar qualitative features, although
magnitudes are different. This allows us to concentrate on
measured at a particular . In the following, only
the
the
measured at
A
is presented to
comply with some of the previous work [29]. It should be
emphasised that the
measured here is not the shift of the
traditionally extrapolated threshold voltage, . At
A
, the
is actually measured with
in this paper.
B. Location of the Generated Donor-Like Interface States
To study the location of generated interface states, we performed PBTS on pMOSFETs with different channel lengths
in the range of 0.919.9 m. The gate voltage shift is shown in
Fig. 4. As
increases,
decreases monotonously. There
are three possible explanations for this decrease
is Larger for
1) The Created Interface State Density
Smaller
: For MOSFETs of different
used here,
the sources/drains were fabricated by the same process and
were stressed under the same condition. The degradation
near the junctions will be independent of
, therefore.
Near the centre of the channel, the degradation can change
with
, if there is a potential variation along the channel.
However, under current PBTS conditions, the substrate was
kept in accumulation and both the source and the drain were
grounded. There is no potential drop along the channel and the
.
degradation in the central region is also independent of
As a result, this explanation can be ruled out.
is Uniformly Distributed Along the Channel and
2) The
is the Same for Different
, but it can Cause a Larger
for Smaller
: It has been shown in Fig. 1(a) that the
119
Fig. 5. A schematic diagram showing the nonuniform degradation of MOSFETs under PBTS.
Fig. 4. Dependence of the PBTI on the effective channel length. The drain
current levels used for measuring Vg are given below. Id
: A W=Le ; Id
nA W=Le .
A W=Le ; Id
1
= 00 1 2
= 01
= 010 2
Fig. 6. Effects of drain voltage used for the transfer characteristic measurement on Vg after PBTS (200 C, 4 MV/cm, 10 min). OForward mode;
Reverse mode by interchanging the source and drain.
120
(a)
, the rate
(b)
Fig. 7. The dynamic behavior of PBTI under different electrical field
MV/cm; F
MV/cm; F
strength, F . OF
MV/cm; F
MV/cm; F
MV/cm. (a) Comparison
between the experimental data (points) and the results of first order reaction
model with a single time constant. The solid lines are fitted curves using
(1). (b) Comparison between the experimental data (points) and the results
of first order reaction model with two time constants. The solid lines are
fitted curves using (4).
= +5
= +2
= +4
= +1
= +3
where
. When a dynamic balance between (R1) and
(R2) is reached, the saturation level is
(3)
TABLE I
DATA SHOWN IN FIG. 7 (150 C)
FOR THE
AND
(4)
121
, , and
are
Using (5), the fitted
given in Table II. It is worth of pointing out that, although
the values of
and
are fitted, they are unique,
since they are independent of the guessed initial input values.
The data shows that
is less than 3% of
and
is not sensitive to temperature. Although the detailed
physical processes are not known, we can make the following
speculations.
For electron or hole trapping in the oxide, it is well known
that different defects have, for constant injection current, different time constants for charge capture [10], [34]. Similarly,
the two time constants extracted for
may arise from two
different types of defects. Both of them can be converted into
the interface states under PBTS and their saturation values
are determined by the number of each defect available. This
is supported by the observation that both saturation levels are
not sensitive to the temperature, as shown in Table II. Because
of the relatively low
( 30 mV) and the time resolution
( 60 s) of present measurement, the initial fast process can
not be measured properly for
C.
The activation energy of ,
, can be estimated by
assuming
, where
is a constant. The
Arrhenius plot of
against
follows a straight line
well [see Fig. 8(b)]. The slope of this line gives an
of 1.23
eV, which is comparable with the upper limit of the activation
energy reported for NBTI
eV, [13], [14], [18]). We
do not have sufficient data to give a reliable
for .
2) At Relatively High Temperature,
175 C: Fig. 8(c)
shows the behavior of
against the PBTS time for
C. Compared with
C, two main differences are
observed.
a) The
decreases, instead of increasing, during the
initial stressing period ( 10 s): This indicates that some
annealing process different from the reaction (R2) becomes important at higher temperature, since the kinetics
based on reactions (R1) and (R2) [see (2)] does not
predict a decrease of
with time.
b)
falls as the temperature increases: Here, an increase
in enhances the annealing rate more than the generation rate. The generation kinetics becomes more complex
and a detailed study of it is beyond the scope of this
paper.
TABLE II
THE FITTING PARAMETERS FOR THE DATA
SHOWN IN FIG. 8(a) ( 4 MV/cm) AND (5)
122
(a)
(b)
(c)
75
Fig. 8. The effects of PBTS temperature on the degradation. (a) The thermal activation of PBTI at relatively low temperature (T
1 C). The solid
C; T
C; T
C; T
C; T
C. (b) The Arrhenius plot of
lines are the fitted curves using (5). OT
A
E=E0 , where A is a constant. (c) The thermal activation of PBTI
time constant t1 . The solid line is the fitted curve with the expression of t1
C) OT
C; T
C; T
C.
at relatively high temperature (T
175
= 175
= 150
= 175 +
= 125
= exp(
= 200 2
= 100
)
= 250
= 75
Fig. 10.
123
124
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