Lecture 15

Semiconductor Science and Light Emitting Diodes

Semiconductor concepts and energy bands
Direct and indirect bandgap semiconductors
The p-n junction principles and band diagram
Light-emission processes in semiconductors
Light-emitting diodes (LEDs)

p-n Junction

Space Charge Layer (SCL)

p-n Junction

Depletion Widths

N aW p = N dWn

(conservation of total charge)

Mass Action Law valid along the whole device, through the pn junction.

p-n Junction
Field (E) and net space charge density

dE net ( x )
=
dx

Field in depletion region

E ( x) =

W p

net ( x )dx

The electric field across the pn junction is found

by integrating net.
Built-in field

Eo =

eN dWn

Built-in voltage

1
Vo = E0W0
2

kT N a N d
Vo =
ln
e ni2

p-n Junction
Law of the Junction
Boltzmann Statistics (only to be used
with nondegenerate semiconductors)

( E2 E1 )
N2
= exp

N1
k
T
B

n po
eVo
= exp

nno
k
T
B
nno = N d

ni2
& n po =
Na

kBT nno kBT N a N d

Vo =
ln
=
ln 2

e
e
ni
n po

Forward Bias: Diffusion Current

Forward Bias: Diffusion Current

n p0
eV
= exp 0
nn0
kBT

n p (0)
e(V V )
= exp 0

nn0
k
T

Forward Bias: Diffusion Current

Law of the Junction: Minority Carrier Concentrations and Voltage

eV
n p ( 0 ) = n po exp
kBT
eV
pn ( 0 ) = pno exp
kBT

Forward Bias: Diffusion Current

Law of the Junction: Minority Carrier Concentrations and Voltage

eV
n p ( 0 ) = n po exp
kBT
eV
pn ( 0 ) = pno exp
kBT

eV
n p ( 0 ) = n po exp
1

kBT

eV
pn ( 0 ) = pno exp
1

kBT

np(0) is the electron concentration just outside the depletion region on the p-side
pn(0) is the hole concentration just outside the depletion region on the n-side

Shockley Equation
Ideal diode (Shockley) equation

eV
J = J so exp
1

kBT

Reverse saturation current

eDh eDe 2
J so =
+
ni

Lh N d Le N a
Intrinsic concentration:
ni depends strongly on the material
(e.g. bandgap) and temperature

Eg
n = N c N v exp

k
T
B
2
i

Forward Bias: Total Current

The total current anywhere in the device is constant. Just outside the depletion region it is
due to the diffusion of minority carriers.

Forward Bias: Recombination Current

Forward biased pn junction, the injection of carriers and their recombination in

the SCL. Recombination of electrons and holes in the depletion region involves
the current supplying the carriers.

Forward Bias: Recombination Current

A symmetrical pn junction for calculating the recombination current.

Forward Bias: Diffusion Current

n p0
eV
= exp 0
nn0
kBT

n p (0)
e(V V )
= exp 0

nn0
k
T

Forward Bias: Recombination Current

J recom

eABC

eBCD

" e(Vo V ) %
nM
= exp $
'
nno
# 2kBT &

! eV $
nM = ni exp #
&
" 2kBT %

J recom

eni

Wp Wn
eV
+ exp 2k T
h
B
e

Forward Bias: Recombination and Total Current

Recombination Current

eni Wp Wn

where J ro =
+
2 e h

J recom = J ro [exp ( eV / 2kBT ) 1]

Total diode current = diffusion + recombination

eV
eV
+ J ro exp

J = J so exp
k BT
2k BT

k BT
V>
e

The diode equation

eV
J = J o exp
1

k BT

General diode
equation

where Jo is a new constant and is an ideality factor

Typical I-V characteristics of Ge, Si and GaAs pn junctions

Typical I-V characteristics of Ge, Si and GaAs pn junctions as log(I) vs. V. The slope
indicates e/(!kBT)

Reverse Bias

Energy band diagrams for a p-n junction under reverse bias

LEFT: Shockley model
RIGHT: Thermal generation in the depletion region

Reverse Bias

diff
rev

eDh
eDe 2
=
+
ni

Lh N d Le N a

ther
rev

eWni
=
g

Reverse Bias
Total Reverse Current

Thermal generation in depletion region

eDh
eDe 2 eWni
J rev =
+
ni +

g
Lh N d Le N a
0
Diffusion current in neutral regions
the Shockley reverse current

Mean thermal generation time

eV
J = J o exp
1

k BT

Heterojunctions

Two types of heterojunction and the definitions of band offsets, Type I and Type II between
two semiconductor crystals 1 and 2. Crystal 1 has a narrower bandgap Eg1 than Eg2 for
crystal 2. Note that the semiconductors are not in contact so that the Fermi level in each is
different. In this example, crystal 1 (GaAs) is p-type and crystal 2 (AlGaAs) is N-type.

Heterojunctions

Under open circuit and equilibrium conditions, the Fermi level EF must be uniform, i.e.
continuous throughout the device.
If EF is close to the conduction band (CB) edge, Ec, it results in an n-type, and if it is close
to the valence band (VB) edge, Ev, it results in a p-type semiconductor.
There is a discontinuity Ec in Ec, and Ev in Ev, right at the junction.

Heterojunctions

Under open circuit and equilibrium conditions, the Fermi level EF must be uniform, i.e.
continuous throughout the device.
If EF is close to the conduction band (CB) edge, Ec, it results in an n-type, and if it is close
to the valence band (VB) edge, Ev, it results in a p-type semiconductor.
There is a discontinuity Ec in Ec, and Ev in Ev, right at the junction.

Light Emitting Diodes

UV LED
(Photos by SK)

Courtesy of Chris Collins

Basic Light Emitting Diodes

(a) The energy band diagram of a pn+ (heavily n-type doped) junction without any bias. Builtin potential Vo prevents electrons from diffusing from n+ to p side.
(b) The applied bias potential V reduces Vo and thereby allows electrons to diffuse, be
injected, into the p-side. Recombination around the junction and within the diffusion length
of the electrons in the p-side leads to spontaneous photon emission.
(c) Quasi-Fermi levels EFp and EFn for holes and electrons across a forward biased pnjunction.

Heterostructure High Density LEDS