PD - 95162

IRF7101PbF
Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description

HEXFET Power MOSFET

S1

D1

G1

D1

S2

D2

G2

D2

VDSS = 20V
RDS(on) = 0.10
ID = 3.5A

Top View

Fourth Generation HEXFETs from International

Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

SO-8

Absolute Maximum Ratings

ID @ TA = 25C
ID @ TA = 100C
IDM
PD @TC = 25C
VGS
dv/dt
TJ, TSTG

Parameter

Max.

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Sodering Temperature, for 10 seconds

3.5
2.3
14
2.0
0.016
12
3.0
-55 to + 150
300(1.6mm from case)

Units
A
W
W/C
V
V/nS
C

Thermal Resistance Ratings

Parameter

RJA

Maximum Junction-to-Ambient

Min.

Typ.

Max

62.5

Units
C/W
10/6/04

IRF7101PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
20

1.0
1.1

Typ.

0.025

7.0
10
24
30

LD

Internal Drain Inductance

4.0

LS

Internal Source Inductance

6.0

Ciss
Coss
C rss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

320
250
75

V(BR)DSS
V(BR)DSS/TJ

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)
g fs

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.10
VGS = 10V, ID = 1.8A

0.15
VGS = 4.5V, ID = 1.0A
3.0
V
VDS = VGS, ID = 250A

S
VDS = 15V, ID = 3.5A
2.0
VDS = 20V, VGS = 0V
A
250
VDS = 16V, V GS = 0V, TJ = 125 C
100
VGS = 12V
nA
-100
VGS = - 12V
15
ID = 1.8A
2.0
nC VDS = 16V
3.6
VGS = 10V

VDD = 10V

ID = 1.8A
ns

RG = 8.2

RD = 26
D

nH

pF

Between lead,6mm(0.25in.)
from package and center
of die contact
VGS = 0V
VDS = 15V
= 1.0MHz

Source-Drain Ratings and Characteristics

IS
I SM

VSD
t rr
Q rr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
2.0
showing the
A
G
integral reverse
14
p-n junction diode.
S
1.2
V
TJ = 25C, IS = 1.7A, VGS = 0V
36
54
ns
TJ = 25C, IF = 1.7A
41
62
nC di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

Pulse width 300s; duty cycle 2%.

ISD 3.5A, di/dt 90A/s, VDD V(BR)DSS,

Surface mounted on FR-4 board, t 10sec.

max. junction temperature.

TJ 150C

IRF7101PbF

C,

IRF7101PbF

IRF7101PbF

Thermal Response (Z thJA )

100

D = 0.50
0.20
10

0.10
0.05
0.02

PDM

0.01

t1

SINGLE PULSE
(THERMAL RESPONSE)

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA

0.1
0.0001

0.001

10

0.01

0.1

10

t1, Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

100

IRF7101PbF

RD

V DS

VDS
90%

VGS

D.U.T.

RG

- V DD

10%
VGS

10V
Pulse Width 1 s
Duty Factor 0.1 %

td(on)

Fig 11a. Switching Time Test Circuit

tr

t d(off)

tf

Fig 11b. Switching Time Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

.2F

12V

10V

.3F

D.U.T.

QGS

+
V
- DS

QGD

VG

VGS
3mA

IG

ID

Charge

Current Sampling Resistors

Fig 12a. Gate Charge Test Circuit

Fig 12b. Basic Gate Charge Waveform

IRF7101PbF
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

Driver Gate Drive

P.W.

dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Period

D=

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 13. For N-Channel HEXFETS

ISD

IRF7101PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D

DIM

B
5

H
0.25 [.010]

MIN

.0532

.0688

1.35

1.75

A1 .0040

.0098

0.10

0.25

e1

8X b
0.25 [.010]

MAX

.013

.020

0.33

0.51

.0075

.0098

0.19

0.25

.189

.1968

4.80

5.00

.1497

.1574

3.80

4.00

.050 BASIC

1.27 BASIC

e1

6X

MILLIMET ERS

MAX

INCHES
MIN

.025 BASIC

0.635 BAS IC

.2284

.2440

5.80

6.20

.0099

.0196

0.25

0.50

.016

.050

0.40

1.27

K x 45
C

y
0.10 [.004]

A1

8X L

8X c

C A B

FOOT PRINT

NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.

8X 0.72 [.028]

2. CONT ROLLING DIMENS ION: MILLIMETER

3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].

6.46 [.255]

7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O

A S UBS T RAT E.
3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: T HIS IS AN IRF7101 (MOSFET )

INT ERNAT IONAL

RECT IFIER
LOGO

XXXX
F 7101

DAT E CODE (YWW)

P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER

IRF7101PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 )

FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04