ECE3040C

Microelectronic Circuits
Final Exam
Wednesday, Dec. 14, 2011.

Student Name:

1.

In terms of the lattice constant a, what is the distance between nearest

neighbor atoms in (5 points)

(a) a bcc lattice?

(b) an fcc lattice?

2.

What are the Miller Indices for this plane? (5 points)?

ECE 3040C| MWF 12:05 1:25 | Fall 2011

Instructor: Azad Naeemi | MiRC 216 | azad@.gatech.edu

3.

You dope a piece of Si with phosphorus with a density of 1014 atoms per
cm-3. What will be the density of majority and minority carriers? The
intrinsic carrier density in Si at 300K is 1010cm-3 (5 points)

4.

Lets assume a thin piece of n-doped semiconductor is shined with light

and the generation rate of GL=1013 per cm3 per second is uniformly created
in its entire volume. The minority carrier lifetime is 1s. What would be
the minority and majority carrier densities if the doping concentration is
1015 per cm3? (Note: Low-level injection assumption is valid here.) (10
points)

ECE 3040C| MWF 12:05 1:25 | Fall 2011

Instructor: Azad Naeemi | MiRC 216 | azad@.gatech.edu

5.

The minority carrier density in the base of a BJT is plotted below. Is the
base transport factor close to zero or to 1 and why (5 points)?

6.

In a half-wave rectifier, you use a diode that can tolerate a maximum of

20V reverse voltage. What is the maximum voltage that this rectifier can
provide (5 points)?

7.

What is the advantage of a bridge rectifier over a half-wave rectifier (5

points)?

ECE 3040C| MWF 12:05 1:25 | Fall 2011

Instructor: Azad Naeemi | MiRC 216 | azad@.gatech.edu

8.

What is the voltage V in this circuit (10 points)? Are D1 and D2 forward
or reverse biased and why?

ECE 3040C| MWF 12:05 1:25 | Fall 2011

Instructor: Azad Naeemi | MiRC 216 | azad@.gatech.edu

9.

In an npn BJT, VBE=0.7V and VBC=-5V (10 points).

A. In what region is this BJT biased?

B. If we change VBC to -10V, what will happen to Ic (increase or

decrease)? Why?

10. How can you make a current source? Draw the circuit and explain what
condition you must satisfy to have a good current source (5 points).

ECE 3040C| MWF 12:05 1:25 | Fall 2011

Instructor: Azad Naeemi | MiRC 216 | azad@.gatech.edu

11. In the circuit below, we want to bias the MOSFET in the saturation region and
ID=1mA (20 points). Assume nCox = 200 A/V2, W/L=5, VTH = 0.4V and = 0,
VDD=4V, and R1=R2=100 k.
What should be Rs? (10 points)

a.

What is the maximum value of RD to stay in the saturation region? (10 points)?

ECE 3040C| MWF 12:05 1:25 | Fall 2011

Instructor: Azad Naeemi | MiRC 216 | azad@.gatech.edu

12. The differential amplifier shown below has the following parameters: VCC
12 V, VEE = 10.7 V, REE = 100 k, RC = 600 k and F = 100 (15 points)
(a) Calculate the Q-point for the transistors in the amplifier circuit.

(b) Draw the half circuit for differential mode.

ECE 3040C| MWF 12:05 1:25 | Fall 2011

Instructor: Azad Naeemi | MiRC 216 | azad@.gatech.edu

(c) Calculate the differential mode gain.

13. In the circuit below, what is the output voltage in terms of the input
voltages V1 and V2, assuming that the OpAmp is ideal and R1=R2=0.1R3 (5
points)

ECE 3040C| MWF 12:05 1:25 | Fall 2011

Instructor: Azad Naeemi | MiRC 216 | azad@.gatech.edu