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Aim:

To study circuit of common base configuration.


Check work point by oscilloscope
Measure the voltage gain and phase difference between input and output voltage
Measure and calculate input and output resistance
Measure current gain .
Components:
Name
Transistor BC 107
Resistor 1K
Resistor 10K
Resistor 47K
Resistor 100K
Resistor 680K
Capacitor 10uf
Capacitor 47uf
Capacitor 100uf

Quantity
1
1
1
2
1
1
1
1
1

Equipment:
Name
Universal patch panel
Ac/Dc power supply
Digital Ammeter
Digital Voltmeter
Connecting Wires
Connection plugs
Function generator
Dual oscilloscope
Circuit Diagram:

Range

0-200mA
0-20V

Quantity
1
2
2
2

1
1

Theory:
Bipolar Junction Transistor (BJT) is a three terminal (emitter, base, collector)
semiconductor device. There are two types of semiconductors namely NPN and PNP. It
consists of two PN junctions namely emitter junction and collector junction.
The basic circuit diagram for studying input characteristics is shown in the circuit
diagram. The input is applied between emitter and base, the output is taken from
collector and base. Here base of the transistor is common to both input and output and
hence the name common base configuration.
input ac signal is injected into the emitter-base circuit and output is taken from the
collector-base circuit. The E/B junction is forward-biased by VEE where as C/B junction
is reverse-biased by VCC. The Q-point or dc working conditions are determined by dc
batteries along with resistors RE and RC. In other words, values of IE, IB and VCB are
decided by VCC,VEE, RE and RC. The voltage VCB is given by the equation VCB=
VCC ICRC.When no signal is applied to the input circuit, the output just sits at the Qpoint so that there is no output signal
Procedure:
1- Connect the circuit as shown in the circuit diagram

2- Check the working point in circuit by oscilloscope


3- Measure VE and VC
4- B1 inserted and B2 removed, generator output 5V , measure
peak to peak value of input voltage, voltage gain and phase
shift between the input and output voltage
5- B1 removed and B2 measure input voltage and output
voltage, calculate input resistance

6- Insert B1,measure output voltage with out B2,calculate


output resistance
7- Calculate current gain
8- Calculate power gain

Measurements:
VE=1.297 V

, VC=8.90V

Voop
Vopp =4.89v , Vipp=24mV , Vgain= Vipp
At B1 closed

Vi1pp=24mV

At B1 open

Vi2pp=1.85

Difference
ri =

Vi 2 pp
Vipp

Vipp=1.826 v

. R1 = 1.0131 ohm

At B2 open

Vo1pp=4.88v

At B2 close

Vo2pp=4.56v

Difference
ro=

Vopp
Vo 2 pp

= 203.75 ,v= 0

Vopp=0.24 v

. R2 = 2.30 kohm

Iipp=0.023 mA , Iopp=0.0104 mA , Igain=4.523


Power gain Gp=Vgain . Igain= 921.56

Inference:
1. Input resistance is in the order of tens of ohms since emitter-base junction is forward
biased.
2. Output resistance is in order of hundreds of kilo-ohms since collector-base junction is
reverse biased.
3. Higher is the value of VCB, smaller is the cut in voltage.
4. Increase in the value of IB causes saturation of transistor at small voltages.

Result:
Transistor in Common Base Configuration are studied Check point by oscilloscope and
measure voltage and current gain ,measure power gain , input and output resistance
Comment :
There is an error rate measurements due to work quickly and because the tools used in the
lab are considered old.

EE311
Common Base (CB) Amplifier