Beruflich Dokumente
Kultur Dokumente
Guwahati,Assam
6th November, 2014
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OUTLINE
Why is graphene popular these days?
What is really matter for FET?
Graphene properties relevant to transistors
Current status of graphene transistors
Graphene fabrication techniques
Conclusion
Reference
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Source:http://graphene-flagship.eu
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Graphene Contd...
Graphene is the mother of all carbon-based systems.
Figure 2: Graphene: mother (top left), Graphite finds in our pencils is simply a stack
of graphene layers (top right), Carbon nanotubes are made of rolled-up sheets of
graphene (bottom left) and Buckminsterfullerene are spheres of wrapped-up graphene
(bottom right)1 .
Main FOM
Electrons and holes behavior is same for electric field effect [3].
High intrinsic carrier concentration and very high current density [3].
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Conduction band
Energy
Bandgap
Valance band
k
Silicon Bandstructure
Energy
Conduction band
Fermi level
Valance band
k
Graphene Bandstructure
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SL graphene on SiO2
LA
No
SL graphene on SiO2
GNR
Yes
BL graphene on SiO2
LA
Yes
Epitaxial SL
LA
Epitaxial BL
LA
Yes
Epitaxial SL,BL
GNR
Yes
Theory [1]
Stained SL
LA
Yes
Graphene on h-BZ
LA
Yes
Experimental [6]
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Performance comparison
S No. Graphene
Type
Bandgap I on /I off
fT
AV
Drawback
20
Bilayer
FET [7, 8]
0.2eV
100
....
35
Requires a larger
perpendicular
electric field
Larger area
FET [5]
2-5
427GHz
for LG =
67nm [2]
...
Nominal
SiMOSFETs
1.12eV
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Figure 5: Electron mobility versus bandgap for different materials (left) and electron
drift velocity versus electric field for common semiconductors (right) [1].
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Graphene Preparation
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Conclusion
During the past 4 years, it made a huge progress in the development of graphene transistors. Most impressive were the
demonstration of a GFET with 1.4 THz cut-off frequency and
GNR MOSFETs with excellent switch-off.
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References I
[1] S. Frank, Graphene transistor, Nature Nanotechnology, vol. 5, no. 7, pp.
487496, 2010.
[2] F. Schwierz, Graphene transistors: Status, prospects, and problems,
Proceedings of the IEEE, vol. 101, no. 7, pp. 15671584, July 2013.
[3] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos,
I. V. Grigorieva, and A. A. Firsov, Electric field effect in atomically thin carbon
films, Science, vol. 306, no. 5696, pp. 666669, 2004.
[4] Y. Wu, D. Farmer, F. Xia, and P. Avouris, Graphene electronics: Materials,
devices, and circuits, Proceedings of the IEEE, vol. 101, no. 7, pp. 16201637,
July 2013.
[5] J. Chauhan and J. Guo, Assessment of high-frequency performance limits of
graphene field-effect transistors, Nano Research, vol. 4, no. 6, pp. 571579,
2011. [Online]. Available: http://dx.doi.org/10.1007/s12274-011-0113-1
[6] L. W. S. W. T. K. S. L. H. YoungA. F., MericI., Boron nitride substrates for
high-quality graphene electronics, Nature Nanotechnology, vol. 5, no. 10, pp.
722726, 2010.
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References II
[7] B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, Current
saturation and voltage gain in bilayer graphene field effect transistors, Nano
Letters, vol. 12, no. 3, pp. 13241328, 2012.
[8] G. Fiori, D. Neumaier, B. Szafranek, and G. Iannaccone, Bilayer graphene
transistors for analog electronics, Electron Devices, IEEE Transactions on,
vol. 61, no. 3, pp. 729733, March 2014.
[9] L. Colombo, R. Wallace, and R. Ruoff, Graphene growth and device integration,
Proceedings of the IEEE, vol. 101, no. 7, pp. 15361556, July 2013.
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Thank You
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