2SC3807MP

Ordering number : ENA0629

SANYO Semiconductors

DATA SHEET
NPN Epitaxial Planar Silicon Transistor

2SC3807MP

25V / 2A High-hFE, Low Frequency

General-Purpose Amplifier Applications

Applications

Low-frequency general-purpose amplifiers, drivers.

Features

Large current capacity (IC=2A).

Adoption of MBIT process.
High DC current gain (hFE=1000 to 2000).
Low collector-to-emitter saturation voltage (VCE(sat)0.5V).
High VEBO(VEBO15V).

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

30

Collector-to-Emitter Voltage

VCEO

25

Emitter-to-Base Voltage

VEBO

17

IC

Collector Current
Collector Current (Pulse)
Collector Dissipation

ICP
PC

Junction Temperature

Tj

Storage Temperature

Tstg

1.1

150

--55 to +150

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42507LA TI IM TC-00000660 No. A0629-1/4

2SC3807MP
Electrical Characteristics at Ta=25C
Parameter

Symbol

Ratings

Conditions

min

typ

Unit

max

Collector Cutoff Current

ICBO

VCB=20V, IE=0A

0.1

Emitter Cutoff Current

IEBO
hFE1

VEB=10V, IC=0A

0.1

DC Current Gain

VCE=5V, IC=500mA

Gain-Bandwidth Product

hFE2
fT

VCE=10V, IC=50mA

Output Capacitance

Cob

VCB=10V, f=1MHz

1000

VCE=5V, IC=1A

260

VCE(sat)

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1A, IB=20mA
IC=1A, IB=20mA

Collector-to-Emitter Breakdown Voltage

V(BR)CBO
V(BR)CEO

IC=10A, IE=0A
IC=1mA, RBE=

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10A, IC=0A
See specified Test Circuit.

Turn-ON Time

ton
tstg

Storage Time
Fall Time

tf

MHz

24

Collector-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

2000

600
pF

0.135

0.5

0.85

1.2

30

25

17

V
0.14

See specified Test Circuit.

0.8

See specified Test Circuit.

0.1

Package Dimensions

Switching Time Test Circuit

unit : mm (typ)
7520-002
IB1

PW=20s
D.C.1%

4.7

6.0
5.0

IB2

INPUT

8.5

VR

RB

RL

50
+
100F

3.0

--5V

1.0

0.5

14.0

1 : Emitter
2 : Collector
3 : Base
SANYO : MP

IC -- VCE
10

1.4

2.0mA

1.8

mA

20.0mA

1.6

A
mA A
5.0 4.0m 3.0m

VCE=5V

6.0

1.0mA

1.2
1.0
0.8

0.5mA

0.6
0.4

1.6
1.4
1.2
1.0

5C
25C

0m

7.

IC -- VBE

2.0

Collector Current, IC -- A

A
.0m

0.8

Ta=
7

1.45

2.0
1.8

VCC=10V

7IB1= --7IB2=IC=700mA

1 2 3

1.45

+
470F

0.6

--25C

0.5
0.6
0.5

Collector Current, IC -- A

OUTPUT

0.4

0.2

0.2

IB=0mA

0
0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Collector-to-Emitter Voltage, VCE -- V

1.8

0
2.0

IT11142

0.2

0.4

0.6

0.8

1.0

Base-to-Emitter Voltage, VBE -- V

1.2
IT11143

No. A0629-2/4

2SC3807MP
hFE -- IC

Gain-Bandwidth Product, f T -- MHz

DC Current Gain, hFE

Ta=75C

25C

--25C
1000

5
0.01

7 0.1

7 1.0

Collector Current, IC -- A

7 1.0

7 10

Collector-to-Base Voltage, VCB -- V

7 0.1

7 1.0

VCE(sat) -- IC

IC / IB=50

0.1
7
5

=
Ta

3
2

C
5
--2

C
25

7 0.1

7 1.0

Collector Current, IC -- A

IT11147

ASO

ICP=4A
10
m
0m s
s

IC=2A

10

1.0
7
5

DC

25C
75C

1m

75

0.01

Ta= --25C

7
5

1.0

IT11145

Collector Current, IC -- A

IT11146

IC / IB=50

Base-to-Emitter
Saturation Voltage, VBE(sat) -- V

7
5
0.01

VBE(sat) -- IC

7
5

Collector Current, IC -- A

Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V

Output Capacitance, Cob -- pF

100

IT11144

f=1MHz

10
0.1

VCE=10V

2
0.01

Cob -- VCB

100

f T -- IC

VCE=5V

op

era

tio

2
0.1
7
5
3

2
2
0.01

7 0.1

7 1.0

Collector Current, IC -- A

IT11148

PC -- Ta

1.4

Ta=25C
Single pulse

0.01
0.1

7 1.0

7 10

Collector-to-Emitter Voltage, VCE -- V

IT11925

Collector Dissipation, PC -- W

1.2

1.0

No

0.8

he

at

sin

0.6

0.4

0.2
0
0

20

40

60

80

100

120

Ambient Temperature, Ta -- C

140

160

IT11926

No. A0629-3/4

2SC3807MP

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of April, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0629-4/4