HITFET BSP 75

Smart Lowside Power Switch

Features

Product Summary
Continuous drain source voltage
On-state resistance
Current limitation
Nominal load current
Clamping energy

Logic Level Input

Input protection (ESD)
Thermal shutdown (with restart)
Overload protection
Short circuit protection
Overvoltage protection
Current limitation

VDS
RDS(ON)
ID(lim)
ID(Nom)
EAS

55
550
1
0.7
550

V
m
A
A
mJ

Application

All kinds of resistive, inductive and capacitive loads in switching applications

C compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.
V bb

+
LOAD

Drain
2
Overvoltage
protection

dv/dt

1
IN

limitation
Short circuit
protection

Overtemperature
protection

ESD

Short
circuit
Current
protection
limitation
Source

HITFET

Pin

Symbol

Function

IN

Input

DRAIN

Output to the load

SOURCE

Ground

TAB

SUBSTRATE

Must be connected to Pin 3

Semiconductor Group

Page 1 of 9

1998-02-04

HITFET BSP 75
Maximum Ratings at Tj=25C unless otherwise specified
Parameter
Continuous drain source voltage
(overvoltage protection see page 4)
Drain source voltage for
short circuit protection
Load dump protection VLoadDump=UP+US; UP=13.5 V
RI1)=2 ; td=400ms; IN=low or high (8V)
RL=50
RI=2 ; td=400ms; IN=high (8V)
RL=22
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation (DC)
Unclamped single pulse inductive energy
ID(ISO) = 0.7 A
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1

Symbol
VDS

Thermal resistance

RthJS
RthJA

junction soldering point:

junction - ambient 3):

Values

VDS

55

Unit
V

32

VLoadDump2)

VIN
VIN
Tj
Tstg
Ptot
EAS

V
80
47
-0.2 ... +10
-0.2 ... +20
-40 ...+150
-55 ...+150
1.8
550

W
mJ

4000

VESD

V
V
C

E
40/150/56
10
70

K/W

1)

RI=internal resistance of the load dump test pulse generator LD200

VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839.
3)
Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm 2 copper area for pin 4 connection
2)

Semiconductor Group

Page 2

1998-02-04

HITFET BSP 75
Electrical Characteristics
Parameter and Conditions

Symbol

at Tj = 25 C, unless otherwise specified

Static Characteristics
Drain source clamp voltage
ID = 10 mA
Tj =-40...+150C:
Off state drain current
VIN = 0 V, VDS = 32 V
Tj =-40...+150C:
Input threshold voltage ID = 10 mA
Input current
normal operation, ID<ID(lim):
VIN = 5 V
current limitation mode, ID=ID(lim):
after thermal shutdown, ID=0 A:
On-state resistance
ID = 0.7 A, VIN = 5 V
Tj=25C:
Tj=150C:
On-state resistance
ID = 0.7 A, VIN = 10 V
Tj=25C:
Tj=150C:
Nominal load current
VBB = 12 V, VDS = 0.5 V, TS = 85C
Tj < 150C
Current limit
VIN = 10 V, VDS = 12 V
Dynamic characteristics
Turn-on time
VIN to 90% ID:
RL = 22 , VIN= 0 to 10 V, V bb= 12 V
Turn-off time
VIN to 10% I D:
RL = 22 , VIN= 10 to 0 V, V bb= 12 V
Slew rate on
70 to 50% V bb:
RL = 22 , VIN = 0 to 10 V, V bb = 12 V
Slew rate off
50 to 70% V bb:
RL = 22 , VIN= 10 to 0 V, V bb= 12 V

Semiconductor Group

Page 3

VDS(AZ)

Values
min
typ
max

Unit

55

--

70

--

--

2
--1000

2.5
100
200
1500

3
200
300
2000

V
A

RDS(on)

---

550
850

675
1350

RDS(on)

475
750
--

550
1000
--

ID(Nom)

--0.7

ID(lim)

1.5

1.9

ton

--

10

20

toff

--

10

20

-dVDS/dt on

--

10

V/s

dVDS/dt off

--

10

V/s

IDSS
VIN(th)
IIN(1)
IIN(2)
IIN(3)

1998-02-04

HITFET BSP 75
Parameter and Conditions

Symbol

at Tj = 25 C, unless otherwise specified

Protection Functions
Thermal overload trip temperature
Tjt
Thermal hysteresis
Tjt
Unclamped single pulse inductive energy
ID(ISO)=0.7 A, Vbb=32 V
Tj=25 C EAS
Tj=150 C
Inverse Diode
Continuous source drain voltage
VIN = 0 V, -ID = 2*0.7 A

VSD

Values
min
typ
max

Unit

150
--

165
10

---

C
K

550
200

---

---

mJ

--

--

Circuit Description
The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level
input, an open drain DMOS output stage and integrated protection functions. It is designed
for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications.

Protection functions
Overvoltage protection: An internal clamp limits the output voltage at VDS(AZ) (about
63 V) when inductive loads are switched off.
Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the
linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the overtemperature threshold is
reached.
Overtemperature and short circuit protection: This protection is based on sensing the
chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Overtemperature shutdown occurs at minimum 150 C. A hysteresis of
typ. 10 K enables an automatical restart by cooling.
The device is ESD protected according Human Body Model (4 kV) and load dump protected
(see Maximum Ratings).

Semiconductor Group

Page 4

1998-02-04

HITFET BSP 75
Block diagram

Inductive and overvoltage output clamp

Terms
V

RL

S
2

I IN
1

IN

ID

VDS

HITFET

Vbb

HITFET
S

VIN

VIN

Input circuit (ESD protection)

VDS(AZ)

VDS

IN

ESD-ZD I

VBB
Source

t
ESD zener diodes are not designed for DC
current.

Turn on into overload or short circuit

VIN

ID

ID(lim)

Shut down by overtemperature and restart by

cooling. Current internally limited at I D(lim).

Semiconductor Group

Page 5

1998-02-04

HITFET BSP 75
Maximum allowable power dissipation
Ptot = f (TC)

On-state resistance
RON = f (Tj); ID= 0.7 A; VIN= 10 V

Ptot [W]

RON [m]

1 000

1.8

900

1.6

800

1.4

700

1.2

600

500

0.8

400

0.6

300

0.4

200

0.2

100

m a x.

typ .

0
0

25

50

75

10 0

125

150

-50

-2 5

25

50

75

100 125

TC [C]

150

Tj [C]

On-state resistance
RON = f (Tj); ID= 0.7 A; VIN= 5 V

Typ. input threshold voltage

VIN(th) = f (Tj); ID= 10 mA; VDS= 12 V

RON [m]

VIN(th) [V]
3

1 400

1 200

2.5

1 000
2
m a x.

800

1.5
600
typ .

400
0.5

200

0
-50

-2 5

25

50

75

100 125

150

Tj [C]

Semiconductor Group

Page 6

-50

-25

25

50

75

1 00

12 5

150

Tj [C]

1998-02-04

HITFET BSP 75
Typ. on-state resistance
RON = f (VIN) ID= 0.7 A; Tj= 25C

Typ. current limitation

ID(lim) = f (Tj); VDS=12V, VIN= 10V

RON [m]

ID(lim) [A]
1.5

2 000

1.4
1 500

1.3
1 000
1.2

500
1.1

0
0

-50

10

-25

25

50

75

1 00

12 5

150

Tj [C]

VIN [V]
Transient thermal impendance
ZthJC = f (tp)
Parameter: D=tp/T
ZthJC [K/W]

Typ. short circuit current

ID(SC) = f (VIN); VDS=12V, Tj= 25C
ID(SC) [A]

1 E+ 2

1.6

D=
0.5

1.4

0.2

1 E+ 1

1.2

0.1
0.05

1
0.01

1 E+ 0

0.8

0.02
P tot

0.005

tp

0.6
t

1E-1

0.4
0.2

VIN [V]

Semiconductor Group

Page 7

1E+4

1E+3

1E+2

1E+1

1E+0

10

1E-1

1E-2

1E-3

1E-4

1E-5

1E-6

1E-2

tp [s]

1998-02-04

HITFET BSP 75
Application examples:

Status signal of thermal shutdown by monitoring

input current

R St
IN

VIN

HITFET

Vbb

V
VIN

thermal shutdown

Semiconductor Group

Page 8

1998-02-04

HITFET BSP 75

Package and ordering code

all dimensions in mm
SOT223/4

Ordering code
Q67060-S7200-A2

BSP75

Definition of soldering point with temperature Ts:

upper side of solder edge of device pin 4.

Pin 4

Semiconductor Group

Page 9

1998-02-04

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.