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DOI: 10.1039/c3nr00218g
www.rsc.org/nanoscale
A novel organometal halide perovskite (CH3NH3PbI2Br) is synthesized and used as a visible light absorber to sensitize one-dimensional (1D) TiO2 nanowire arrays (NWAs) for all-solid-state hybrid
solar cells. It achieved a power conversion eciency (PCE) of 4.87%
and an open circuit voltage (Voc) of 0.82 V, both higher than those of
its analogue CH3NH3PbI3.
All-solid-state hybrid photovoltaics based on mesoscopic inorganic semiconductor nanostructures and organic conducting
materials have been considered as promising next generation
solar cells, as they integrate the desirable advantages of nanofabrication and organic electronics.1,2 In this hybrid system,
extremely thin absorber (ETA) layers, such as molecular dyes1,3
or semiconductor quantum dots,47 are typically introduced to
the interface between the inorganic electron transport materials
(ETMs) and the organic hole transport materials (HTMs), to
enhance the light harvesting eciency. Upon light excitation,
the ETA injects electrons into the conduction band (CB) of the
semiconductor and holes into the HTMs, allowing the separation of photogenerated charges, which then diuse to the
corresponding electrodes. Such charge separation and transport occurring at the ETAETM and ETAHTM interfaces play a
crucial role to the device performance.2,3,8 In this vein, it is very
important to tune the optical and electronic properties of the
ETA layers by varying the band gaps of the semiconductor
quantum dots through quantum connement9,10 or by
employing organic dyes with dierent highest-occupied and
lowest-unoccupied molecular orbitals (HOMOLOMO)11,12 to
optimize the energy level alignment and light absorption in the
hybrid system. However, applying these ETA materials to the
Department of Chemistry, The Hong Kong University of Science and Technology, Clear
Water Bay, Kowloon, Hong Kong, China. E-mail: chsyang@ust.hk; Fax: +852-23581594; Tel: +852-2358-7362
Electronic supplementary information (ESI) available: Experimental procedures,
characterization details, including additional SEM, TEM, EDS, XRD and
photovoltaic characteristics of cells based on TiO2 NWAs with dierent lm
thickness. See DOI: 10.1039/c3nr00218g
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Fig. 1 Cross-sectional (a) and top (b) view SEM images of TiO2 NWAs synthesized on FTO substrates. SEM images of CH3NH3PbI2Br (c) and CH3NH3PbI3 (d)
spin-coated on TiO2 NWAs. (e) Cross-sectional SEM image of the TiO2 NWAs/
perovskite sensitizer/spiro-MeOTAD hybrid photovoltaic cell. (f) Schematic illustration of the hybrid solar cell.
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CH3NH3PbI2Br sensitized photoanode are 2.55%, 7.97% and
6.33%, respectively, translating to the expected 1 : 2 : 1 atomic
ratio (Fig. S4a, ESI), while those of I and Pb with CH3NH3PbI3
are 17.23% and 9.31%, respectively, resulting in a 3 : 1 atomic
ratio that correlates with the formula unit (Fig. S4b, ESI). The
formation of the perovskite ETA layers has been further
conrmed by XRD analysis. The XRD patterns for
CH3NH3PbI2Br and CH3NH3PbI3 coated on TiO2 NWAs (Fig. 2a)
and FTO (Fig. 2b) indicate that both materials have a similar
crystalline structure assignable to the perovskite system.23,24 The
CH3NH3PbI3 sensitized lm gives diraction peaks at 14.05,
28.45, 31.87, 40.45 and 43.13 , which can be assigned to the
(110), (220), (310), (224) and (314) planes of the tetragonal
and c 12.637 A,
while
perovskite structure with a 8.872 A
CH3NH3PbI2Br shows peaks at 14.40, 29.06 and 32.60 corresponding to the (110), (220) and (310) planes, respectively, of a
b 8.692 A
and
tetragonal perovskite structure with a 8.681 A,
Compared to CH3NH3PbI3, the diraction peaks of
c 12.268 A.
CH3NH3PbI2Br are shied uniformly to high angles, which can
be rationalized by the shrunken crystalline lattice wholly caused
by the single-atom replacement of I with Br. Those atomic to
structural changes in the ETA layer cast important variations in
its optical and electronic properties, thereby oering a handle
to modulate the photovoltaic operation of the hybrid devices.
Fig. 3a shows the diuse reectance spectra of the two
organometal halide perovskites spin-coated on TiO2 NWAs and
the corresponding absorption spectra (inset) converted
according to the KubelkaMunk relation (optical absorption
coecients f F(R) (1 R)2/2R). While CH3NH3PbI3 absorbs
light in a relatively longer wavelength region up to 800 nm, the
appreciable absorption of CH3NH3PbI2Br is mainly at <700 nm;
note that the absorption coecients of the latter at 400650 nm
are substantially higher than those of CH3NH3PbI3 (inset of
Fig. 3a). The dierent absorption ranges can be easily ascribed
to the variation of the energy band gaps (Eg) of those two
semiconductor sensitizers arising from the Br-replacement
induced structural modications. Eg for the perovskite sensitizers can be estimated using the conventional Tauc equation
[F(R)hn]n A(hn Eg) (A is an empirical constant, n 2 for the
direct band gap semiconductor) by extrapolation of the linear
part of the [F(R)hn]n vs. hn plots (Fig. 3b). We found that the Eg
Fig. 2 XRD patterns of the perovskite sensitizers spin-coated on (a) TiO2 NWAs
and (b) FTO substrates.
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Fig. 3 (a) Diuse reectance spectra of the organometal halide perovskitecoated TiO2 NWAs and the corresponding absorption spectra obtained by the
KubelkaMunk method (inset). (b) Plots of [F(R)hn]2 vs. photon energy (hn). (c)(e)
UPS spectra of the perovskite-coated TiO2 NWAs.
Fig. 4 Schematic energy level diagrams of the TiO2 NWAs, organometal halide
perovskite sensitizers CH3NH3PbI3 (a) and CH3NH3PbI2Br (b), and spiro-MeOTAD.
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hybrid photovoltaic cells. Apparently, the higher CB edge of
CH3NH3PbI2Br elicits a larger driving force for the photogenerated electrons to transfer from the sensitizer to the TiO2
NWAs, which could lead to an enhanced photogenerated electron injection eciency from the CH3NH3PbI2Br sensitizer to
the TiO2 NWAs,10,25 compared to the CH3NH3PbI3-based device.
Indeed, the CH3NH3PbI2Br-based photovoltaic cell gives higher
incident photon-to-current conversion eciency (IPCE) values
at 400650 nm than those of CH3NH3PbI3 as can be seen from
Fig. 5a, which, although mainly caused by the higher optical
absorption coecients at 400650 nm (inset of Fig. 3a), could
also benet from the enhanced electron injection from the
CH3NH3PbI2Br sensitizer to the TiO2 NWAs. The resulting
short-circuit current density (Jsc) of 10.12 mA cm2 (Fig. 5b and
Table 1) is comparable to that of the CH3NH3PbI3-based device
in spite of the much narrower absorption of CH3NH3PbI2Br
(Fig. 3a).
Contrasting the high IPCEs at 400650 nm, there is a smaller
dark current of the photovoltaic cell based on CH3NH3PbI2Br
compared to that of the CH3NH3PbI3-based device (Fig. 5b),
meaning that the solar cell featuring the TiO2 NWAs/
CH3NH3PbI2Br sensitizer/spiro-MeOTAD/Au junction can better
restrain the recombination of the photogenerated electrons
injected into the TiO2 NWAs and the holes extracted into spiroMeOTAD. Since the Voc and ll factor (FF) are closely related to
the recombination rate of the photogenerated charges, the
larger Voc (0.82 V) and FF (0.59) of the CH3NH3PbI2Br-based cell
are thus expected (Fig. 5b and Table 1). Altogether, it is because
of the improvements in IPCE (at 400650 nm), FF and Voc that
the CH3NH3PbI2Br cells could achieve an overall PCE of 4.87%,
almost 20% higher than that based on the CH3NH3PbI3 sensitizer (4.29%) (Table 1).
Of note is that the 1D TiO2 NWAs/CH3NH3PbI2Br/spiroMeOTAD device performs best when the length of the 1D NWAs,
or the lm thickness, is 1.5 mm (Fig. S5 and Table S1, ESI).
This is contrary to the hybrid perovskite photovoltaic cells based
on mesoporous lms, the thickness of which is restricted to the
submicron scale due partly to the limitations of electron
transport in nanocrystalline lms and the pore lling of polymer HTMs.19,20 This result indicates that the 1D NWAs-based
device oers the promise of employing thicker lms with larger
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Table 1 Photovoltaic properties of the hybrid solar cells based on the organometal halide perovskite sensitizers and 1D TiO2 NWAsa
Perovskite sensitizer
Jsc
(mA cm2)
Voc (V)
FF
h (%)
CH3NH3PbI2Br
CH3NH3PbI3
10.12
10.67
0.82
0.74
0.59
0.54
4.87
4.29
a
The estimated error is 5%. Preparation conditions of the TiO2 NWAs,
growth temperature: T 180 C, growth time: t 8 h.