IndianInstituteofTechnologyRoorkee

DepartmentofMetallurgicalandMaterialsEngineering

MT201ElectricalandElectronicMaterials

Tutorial1

1.

i.

ii.

2.

3.

i.

ii.

4.

i.
ii.
iii.
iv.
v.
vi.

Consider a multicomponent alloy containing N elements.Ifw

,w
,w
,..,w
1
2
3
Nare
the weight fractions of the components 1, 2, 3, ..,N in the alloy and M
, M
,
1
2
M
,..,M
3
N are the respective atomic masses of the elements, show that the
th
atomicfractionofthei
componentisgivenby,

n
=w
M
i
i
i

w
M
+w
M
++w
M
1
1
2
2
N
N

Consider the semiconductingIIVI compoundcadmiumselenide,CdSe.Giventhe

atomic masses of Cd and Se, find the weight fraction of Cd and Se in the
compoundandgramsofCdandSeneededtomake100gramsofCdSe.

Explain the general bonding principle ofatomstoformacrystallinesolidwiththe

helpofenergyversesinteratomicdistanceplot.

Statevariousphysicalandmechanicalpropertiesofmaterials.

Explainhowthebonding
type
affecttheaboveproperties.Giveexamples.

Define
and
explain
thefollowingwiththehelpofsuitable
diagrams

Spacelattice
Unitcellandlatticeparameters
Crystalsystems
Bravaislatticeandtheirclassification
OriginforthecreationofFCCBravaislatticefromaprimitivecubiclattice
Crystalvoidsandtheircoordinates

5.

i.
ii.

iii.
iv.
v.
vi.
vii.

viii
.

6.

i.

ii.

iii.

iv.

v.

vi.

7.

i.

Calculatethefollowing:
Effectivenumberofatoms
inSC,BCC,FCC,HCPunitcells
Relationship between the size of the unit cell and atomic diameter in SC, BCC,
FCC,HCPunitcells

Packingfactors
ofBCC,FCC,HCPunitcells

Packingfactor
ofadiamondcubiccrystalstructure

Coordinationnumbers
ofBCC,FCC,HCPcrystallattice

c/aratio
foranidealHCPunitcell
Sizeoflargestspherethatcanfitintothetetrahedral&octahedralinterstitialsites
ofaclosepackedstructureswithoutdistortingtheunitcell.

Volumeofunitcellofgermanium incubicmeters,theatomicradiusofGehaving
o
DiamondCubicstructurebeing1.223A

Showwiththehelpofneatsketchesthefollowing:

Planes whose Miller indices are (111), (210), (010), (0 ), (002), (130), (212)
and(32).

Directions whose Miller indices are [111],[110],[10],[122],[301],[201]and[2

3].

[1210], [01 0], [011]

directions and (1210), ( 22), (1230)
planes (Miller
BravaisIndex)inHCPunitcell
Inacubicunitcellthe(hkl)&[hkl]areperpendiculartoeachother

Miller index ofthedirectionthatiscommontobothplanes

(110)and(111)inside
theunitcellofacubiccrystal.

3 parallel planes of belonging to {111} inside a cubic unit cell (maybetouching

theUC).

6direction<110>onanyone{111}
GiventheSilatticeparametera=0.543nm.CalculatethenumberofSiatomsperunitvolume,in
3
nm
.

ii.

2
2
Calculatethenumberofatomsperm
andpernm
onthe(100),(110),and(111)planesintheSi
crystalasshowninabovefigure.Whichplanehasthemaximumnumberofatomsperunitarea?

iii.

3
ThedensityofSiO
is2.27gcm
.Giventhatitsstructureisamorphous,calculatethenumberof
2
3
moleculesperunitvolume,innm
.Compareyourresultwith(i)andcommentonwhathappens
whenthesurfaceofaSicrystaloxidizes.TheatomicmassesofSiandOare28.09and16,
respectively.

8.

Indevicefabrication,Siisfrequentlydopedbythediffusionofimpurities(dopants)athigh
0
temperatures,typically9501200
C.TheenergyofvacancyformationintheSicrystalisabout
0
3.6eV.WhatistheequilibriumconcentrationofvacanciesinaSicrystalat1000
C?Neglectthe
changeinthedensitywithtemperaturewhichislessthan1percentinthiscase.

i.

Describewithneatsketches,the3typesoflinedefectsandrelate
b,
Burgersvectorwith
dislocationline.

ii.

Describeplanardefectsgrainboundariesandsurfacedefects

iii.

Howdothedefectsaffecttheelectricalconductivityofthematerials?

10
.

i.

Whataretheallotropicallydifferentformsofcarbon?

ii.

Giveneatsketchesoftheircrystalstructures.

iii.

Howdoyouclassifythesematerialsintermsofelectricalconductivity?

11
.

i.

Whysinglecrystalsareusedforelectronicapplications?Explainmethodsofbulksinglecrystal
growth.

ii.

Whatisepitaxialgrowth?Explainwithoneexampleeachofgrowthforbinary,ternaryand
quaternarysemiconductorcompounds,withthehelpofEgvslatticeparameterofthecrystalplot.

iii.

Whatisthesignificanceofdistributioncoefficientinzonerefining?

12
.

i.

Howamorphoussemiconductorsareprepared?Giveanexample.

ii.

Explainhowthenonstoichiometeric,ZnOcrystalwithexcessZnattheinterstitialsitescontribute
freeelectronforconduction.

13
.

Consider50%Pb50%Snsolderalloy:

i.

Sketchthemicrostructureofthealloyatvariousstagesasitiscooledfromthemelt.Whatisthe
importanceofthisalloyinelectricalapplications?

ii.

Atwhattemperaturedoesthesolidmelt?Whatisthesignificanceofthistemperature?

iii.

Whatisthetemperaturerangeoverwhichthealloyisamixtureofmeltandsolid?whatisthe
microstructureofthesolid?

iv.

0
Considerthesolderatroomtemperaturefollowingcoolingfrom183
C.Assumethattherateof
0
coolingfrom183
Ctoroomtemperatureisfasterthantheatomicdiffusionratesneededtochange
thecompositionsofthe

and

phasesinthesolid.Assumingthealloyis1kg.Calculatethe
massesofthefollowingcomponentsinthesolid.

a)Theprimary

(proeutectic)
,
b)

inthewholealloy,c)

intheeutecticsolidand
d)

inthealloy(whereisthe

phase?)

e)ForPb40Sn,findthedegreeoffreedomat,
i)liquidregion,ii)liquidus,iii)twophasemushyregion,iv)solidusandv)atroomtemperature.