Beruflich Dokumente
Kultur Dokumente
2SC5886A
High-Speed Switching Applications
DC/DC Converter Applications
Unit: mm
Rating
Unit
VCBO
120
VCEX
100
VCEO
50
VEBO
DC
IC
Pulse
ICP
10
IB
0.5
Base current
Ta = 25C
Collector power
dissipation
Symbol
Tc = 25C
Junction temperature
Storage temperature range
V
V
A
A
Pc
20
JEDEC
JEITA
Tj
150
TOSHIBA
Tstg
55 to 150
2-7J1A
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 120 V, IE = 0
100
nA
IEBO
VEB = 9 V, IC = 0
100
nA
V (BR) CEO
IC = 10 mA, IB = 0
50
hFE (1)
VCE = 2 V, IC = 0.5 A
400
1000
hFE (2)
VCE = 2 V, IC = 1.6 A
200
VCE (sat)
IC = 1.6 A, IB = 32 mA
0.22
VBE (sat)
IC = 1.6 A, IB = 32 mA
1.10
60
500
95
Rise time
Switching time
Storage time
Fall time
tr
tstg
tf
See Figure 1.
VCC
24 V, RL = 15
IB1 = 32 mA, IB2 = 53 mA
ns
2005-02-28
2SC5886A
VCC
IB1
IB1
Input
RL
20 s
Output
IB2
IB2
Duty cycle < 1%
Marking
C5886A
2005-02-28
2SC5886A
IC VCE
hFE IC
6
40
30
20
10
Common emitter
VCE = 2 V
Pulse test
hFE
50
DC current gain
70
10000
Common emitter
Tc = 25C
Pulse test
2
2
Tc = 100C
1000
25
55
100
IB = 1 mA
0
0
Collectoremitter voltage
10
0.001
10
0.01
0.1
VCE (V)
VCE (sat) IC
IC/IB = 50
Pulse test
Tc = 100C
0.1
55
25
0.01
0.001
0.01
0.1
Collector current
Common emitter
IC/IB = 50
Pulse test
55
Tc = 100C
0.1
0.001
10
25
0.01
VCE IB
10
VCE
55
Tc = 100C
25
1
0
0
0.4
Common emitter
Tc = 25C
Pulse test
(V)
Common emitter
VCE = 2 V
Pulse test
0.8
Baseemitter voltage
10
IC (A)
Collectoremitter voltage
0.1
IC VBE
5
10
VBE (sat) IC
10
Common emitter
10
1.2
1
3
2
1.6
0.1
IC = 1 A
0.01
0.001
1.6
VBE (V)
0.01
0.1
Base current IB
10
(A)
2005-02-28
2SC5886A
rth(jc) tw
10
1
0.001
0.01
0.1
Pulse width
tw
10
(s)
IC max (pulse)*
10
100 s*
10 s*
1 ms*
IC max (continuous)*
10 ms*
1
100 ms*
DC operation
Tc = 25C
0.1
*: Single pulse Tc = 25C
Curves must be derated
linearly with increase in
temperature
0.01
0.1
Collectoremitter voltage
VCEO max
10
100
VCE (V)
2005-02-28
2SC5886A
030619EAA
2005-02-28