KSC5305D

NPN Silicon Transistor

Features

High Voltage High Speed Power Switch Application

Built-in Free-wheeling Diode makes efficient anti saturation operation
Suitable for half bridge light ballast Applications
No need to interest an hFE value because of low variable storage-time spread even though corner spirit product
Low base drive requirement

Equivalent Circuit
C

TO-220

1.Base

Absolute Maximum Ratings

2.Collector

3.Emitter

Ta = 25C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector Base Voltage

800

VCEO

Collector Emitter Voltage

400

VEBO

Emitter Base Voltage

12

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

10

IB

Base Current (DC)

IBP

*Base Current (Pulse)

PC

Power Dissipation (TC=25C)

75

TJ

Junction Temperature

150

- 65 to 150

Rating

Units

TSTG
Storage Temperature
* Pulse Test : Pulse Width = 5mS, Duty cycles 10%

Thermal Characteristics
Symbol
Rjc

Parameter
Thermal Resistance

Rja

Junction to Case

1.65

C/W

Junction to Ambient

62.5

C/W

2010 Fairchild Semiconductor Corporation

KSC5305D Rev. A2

www.fairchildsemi.com
1

KSC5305D NPN Silicon Transistor

May 2010

Symbol

Ta=25C unless otherwise noted

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC=1mA, IE=0

800

BVCEO

Collector-Emitter Breakdown Voltage

IC=5mA, IB=0

400

BVEBO

Emitter-Base Breakdown Voltage

IE=1mA, IC=0

12

ICBO

Collector Cut-off Current

VCB=500V, IE=0

10

IEBO

Emitter Cut-off Current

VEB= 9V, IC= 0

10

hFE1
hFE2

DC Current Gain

VCE=1V, IC=0.8A
VCE=1V, IC=2A

22
8

VCE(sat)

Collector-Emitter Saturation Voltage

IC=0.8A, IB=0.08A
IC=2A, IB=0.4A

0.4
0.5

V
V

VBE(sat)

Base-Emitter Saturation Voltage

IC=0.8A, IB=0.08A
IC=2A, IB=0.4A

1.0
1.0

V
V

Cob

Output Capacitance

VCB=10V, f=1MHz

75

pF

tON

Turn On Time

150

ns

Storage Time

VCC=300V, IC=2A,
IB1=0.4A, IB2=-1A,
RL=150

tSTG

0.2

VCC=15V, VZ=300V,
IC=2A, IB1=0.4A,
IB2=-0.4A, LC=200H

2.25

150

ns

tF
tSTG

Fall Time
Storage Time

tF

Fall Time

VF

Diode Forward Voltage

IF=1A
IF=2A

1.5
1.6

V
V

trr

* Reverse recovery time

(di/dt = 10A/s)

IF=0.4A
IF=1A
IF=2A

800
1.4
1.9

ns
s
s

* Pulse Test : Pulse Width = 5mS, Duty cycles 10%

2010 Fairchild Semiconductor Corporation

KSC5305D Rev. A2

www.fairchildsemi.com
2

KSC5305D NPN Silicon Transistor

Electrical Characteristics

100

IB = 500mA
IB = 450mA
IB = 400mA
IB = 350mA
IB = 300mA
IB = 250mA
IB = 200mA
IB = 150mA

IB = 100mA
IB = 50mA

VCE = 1V

Ta = 125 C
25 C

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

-25 C

10

IB = 0
0

1
0.01

10

0.1

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

100

VCE = 5V

Ta = 125 C

hFE, DC CURRENT GAIN

25 C
o

-20 C

10

1
0.01

0.1

10

IC = 10 IB

VBE(sat)

VCE(sat)
0.1

0.01
0.01

10

0.1

IC[A], COLLECTOR CURRENT

IC = 5IB

VBE(sat), SATURATION VOLTAGE

VCE(sat)[V], SATURATION VOLTAGE

10

25 C
1

Ta = 125 C

0.01
0.01

-20 C

0.1

0.1
0.01

10

IC[A], COLLECTOR CURRENT

-20 C
o

25 C
o

Ta = 125 C

0.1

10

IC[A], COLLECTOR CURRENT

Figure 5. Collector-Emitter Saturation Voltage

Figure 6. Base-Emitter Saturation Voltage

2010 Fairchild Semiconductor Corporation

KSC5305D Rev. A2

10

Figure 4. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = 5IB

0.1

IC[A], COLLECTOR CURRENT

Figure 3. DC current Gain

10

10

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

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3

KSC5305D NPN Silicon Transistor

Typical Characteristics

(Continued)

1000

10

f = 1MHz

VCC = 300V
IC = 5IB1 = -2.5IB2

Cob[pF], CAPACITANCE

tSTG, tF [s], TIME

tSTG
1

tF
0.1

0.01
0.1

100

10

10

Figure 7. Switching Time

Figure 8. Collector Output Capacitance

10

Vf [V], FORWARD DIODE VOLTAGE

1.6

1.4

1.2

1.0

0.8

1.0

1.5

0.1
0.01

2.0

0.1

Figure 9. Reverse Recovery Time

10

Figure 10. Forward Diode Voltage

100

100

PC[W], POWER DISSIPATION

IC[A], COLLECTOR CURRENT

IF[A], FORWARD DIODE CURRENT

If[A], FORWARD CURRENT

10

1s
10s
DC
1

5ms

1ms

0.1

0.01
10

100

80

60

40

20

1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 11. Safe Operating Area

Figure 12. Power Derating

2010 Fairchild Semiconductor Corporation

KSC5305D Rev. A2

100

VCB[V], COLLECTOR-BASE VOLTAGE

IC[A], COLLECTOR CURRENT

trr[s], REVERSE RECOVERY TIME

10

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4

KSC5305D NPN Silicon Transistor

Typical Characteristics

(Continued)

Vcc = 50V
VBE(off) = -5V
LC = 1mH
Ic = 4 Ib

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

7
6
5
4

-5V

3
2
1
0
200

300

400

500

600

700

800

Vcc = 50V
VBE(off) = -5V
LC = 1mH

Ic = 5 Ib
3

Ic = 4 Ib
Ic = 3.3 Ib

Ic = 2.2 Ib

900

VCE[V], COLLECTOR-EMITTER VOLTAGE

10

ICE[A], COLLECTOR CURRENT

Figure 13. Reverse Bias Safe Operating

Figure 14. RBSOA Saturation

2010 Fairchild Semiconductor Corporation

KSC5305D Rev. A2

www.fairchildsemi.com
5

KSC5305D NPN Silicon Transistor

Typical Characteristics

KSC5305D NPN Silicon Transistor

Physical Dimensions

TO-220
4.50 0.20
2.80 0.10
(3.00)

+0.10

1.30 0.05

18.95MAX.

(3.70)

3.60 0.10

15.90 0.20

1.30 0.10

(8.70)

(1.46)

9.20 0.20

(1.70)

9.90 0.20

1.52 0.10

0.80 0.10
2.54TYP
[2.54 0.20]

10.08 0.30

(1.00)

13.08 0.20

)
(45

1.27 0.10

+0.10

0.50 0.05

2.40 0.20

2.54TYP
[2.54 0.20]

10.00 0.20

Dimensions in Millimeters

2010 Fairchild Semiconductor Corporation

KSC5305D Rev. A2

www.fairchildsemi.com
6

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First Production

No Identification Needed

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Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I49

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