Beruflich Dokumente
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R, r
With expansion
z2
Without expansion
Z 2 R2
1
a 2 b2
1 b
a2
r2
b2
b
Heart
Z0
9.0k
apparent
Z, z
1 a
apparent
6.0k
3.0k
0.0
9.0k
apparent , apparent
With electronic devices
6.0k
3.0k
Without electronic devices
0.0
4
6
apparent 100%
10
31 mm
600 m
600 m
18.5 mm
Electrode
Au electrode
PI base and
encapsulation
Cable connection
Electrode with
electrodeposited IrOx
100 m
Interconnects
Interconnects
105
-20
-40
104
-60
3
10
Impedance ()
106
-80
102
100
101
102
103
104
105
Frequency (Hz)
OCP [mV]
400
300
200
100
5.5
6.0
6.5
7.0
7.5
pH (Glass Electrode)
15 mm
11 mm
Temperature sensor
300 m
Interconnects
Cable connection
960
Resistance ()
940
920
900
880
860
840
15 20 25 30 35
40 45 50 55 60 65
Temperature ( C)
16 mm
11 mm
Si strain sensors
Interconnects
Cable connection
b
LV
RV
8 mm
Supplementary Figure 10: Si strain sensors array. (a) Design and optical
microscope image of the Si strain sensors array. Inset: optical microscope image
of 3 p-doped Si piezoresistors arranged in a rosette configuration. Longitudinal
axes of piezoresistor 1 and 3 correspond to <110> crystalline directions,
longintudinal axis of piezoresistor 2 corresponds to <100> direction. (b) Image of
a 3D-MIM with Si strain sensors array integrated on a Langendorff-perfused rabbit
heart.
6
1
2
3
5
4
3
2
1
0
-1
0
6
9
Strain (%)
12
15
7.7 mm
7.7 mm
-ILED
Interconnects
Cable connection
Supplementary Figure 12: Design of the -ILEDs array for optical mapping
experiments..
Current (mA)
6
4
2
0
0
Voltage (V)
400
600
800
1000
Wavelength (nm)
100
75
50
25
0
0
Current (mA)
Elastomer straps
A Langendorff-perfused
rabbit heart with a 3D-MIM
Conductive cable
Tissue chamber
Perfusion system
CMOS camera
Tissue chamber
CMOS camera
A Langendorff--perfused
rabbit heart with a 3D-MIM
Cable
connection
Heart
model
Electronic
devices
Electronic
devices
Cable
connection
1 cm
0.5 cm
57. Expose with UV from the back side of the sample (123 mJcm2, 405 nm).
58. Post-bake at 70 C for 30 s.
59. Develop in developer DS2100 for 70 s.
60. Cure BCB in oxygen-free environment at 210 C for 120 min.
61. Descuum process using RIE (200 mTorr, 18 sccm O2, 2 sccm CF4, 150 W RF power,
30 s).
2nd Metallization.
62. Deposit Cr: 10 nm /Au: 300 nm with e-beam evaporator.
63. Pattern PR.
64. Wet etch Cr/Au.
65. Strip PR with acetone, IPA and DI water.
66. Dehydrate for 5 min at 150 C.
Encapsulation and polymer patterning.
67. Spin coat polyimide (PI) precursor (poly(pyromellitic dianhydride-co-4,4
-oxydianiline), amic acid solution, Sigma-Aldrich) (4,000 rpm, 30 s).
68. Cure PI in oxygen-free environment at 210 C for 120 min.
69. Deposit Cu: 600 nm via e-beam evaporator.
70. Pattern PR for Cu mask.
71. Wet etch of Cu.
72. Etch polymer with RIE (200 mTorr, 3 sccm CF4 and 19.6 sccm O2, 175 W for 30
min).
5
16).
6
11
epitaxial
stacks
of
p-GaAs:C
(50
nm)//Al0.45Ga0.55As:C
(800
18