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ABSTRACT
In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1xGex/Si multiple quantum wells on relaxed Si1yGey is proposed for photodetection applications. The Si1yGey/Si/Si1xGex/Si/Si1yGey stack consists in a
W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR)
photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at
room temperature (RT) in the range 1.3 - 1.55 m. The electron transport in the Si/Si1xGex/Si multi-quantum
wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and
thermally activated transfer through the barriers mainly. These processes were modeled with a system of
Schrdinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence
of zero-bias resistance area product (R0A) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.
KEYWORDS
Strained SiGe/Si Quantum Wells; Band Structure; Device Engineering; P-i-n Infrared Photodetectors
1. Introduction
Although III-V compounds, such as InGaAs latticematched to InP, offer superior optical performance over
the Si-based ones in photodetectors at wavelengths near
1.3 and 1.55 m for optical fiber communications [1], the
compatibility of silicon materials with the state-of-the-art
VLSI technology stimulates a great number of research
efforts to take advantage of the feasibility of photodetectors with wavelengths beyond the limitation of the Si
band gap, to 1.3 m and even to 1.5 m [2,3]. Recent
advances in Si low-temperature epitaxy such as molecular beam epitaxy (MBE) and ultra-high vacuum chemical
vapor deposition (UHV-CVD) enable the incorporation
*
Corresponding author.
OPEN ACCESS
38
N. SFINA ET
AL.
3. Theoretical Model
The model of quantum transport is developed for a
p-Si1yGy/Si1yGy/Si/Si1xGx/Si/Si1yGy/n-Si1yGy
device in which external p-Si 1y G y/Si 1y G y and
Si1yGy/n-Si1yGy regions act as electron injector and
collector for internal Si1yGy/Si/Si1xGx/Si/Si1yGy
quantum well. The lower energy conduction band is
solely considered, that corresponds to the six-fold ,
four-fold 4 and two-fold 2 degenerated valleys for
Si1yGy injecting contacts, Si1xGx potential barriers
and Si quantum wells region, respectively (see Ref. [11]).
The band diagram of the single W structure under an
external applied voltage Vbias and possible mechanisms
of electron transport are shown schematically in Figure 2.
The tunneling process in this structure between Si quantum wells is supposed to be a general carrier transfer
mechanism (mechanism 1 in Figure 2). The pre-confinement Si regions forward and afterwards the
Si1xGx barrier stack accumulate electrons. They fill
the states possessing energy close to the bottom of the
MNSMS
N. SFINA ET
AL.
39
Figure 1. (a) Conduction and valence bands profile along the strained Si1yGey/Si/Si1xGex/Si/Si1yGey structure with straininduced energy-splitted bands. In insert are shown the six iso-energetic ellipsoidal surfaces of conduction for unstrained
Si1yGy; (b) Schematic diagram of a p-i-n photodetectors. The cross-sectional view shows the structure of strained SiGe/Si
W-multiple quantum wells grown on silicon on relaxed SiGe direct buffers.
_
1
2
4
+
1
hh
+
lh
hh
2
+
+
OPEN ACCESS
k BT
(1)
MNSMS
N. SFINA ET
40
( EF ( z ) q )
p ( z ) = pih exp
k BT
(2)
where nie and pih are the respective effective equilibrium concentrations of electrons and holes at zero bias,
q is the elementary charge, k B is the Boltzmann constant, T is the temperature, ( z ) is the electrostatic
potential extension along z direction, and EF is the
Fermi energy. The electrons fill all available states in
active zone of the structure according to the Fermi-Dirac
f ( E ) distribution [16]. The Fermi level is linearly varying from EF ( P ) = EF at the P region contact to
EF (=
EF qVbias at the N contact region. The electron
C)
and hole densities in the active part of the device are described in the following way:
n ( x, y, z ) = 2 v ( x, y, z ) f ( E ) (3)
2
p ( x, y, z ) = 2 v ( x, y, z ) f ( E ) (4)
2
k BT
2
=
( x, y ) exp ( ik x x + ik y y ) . The longitudinal wave function v ( z , k z ) along z direction corresponding to wave
vector value k z is one solution of the Schrdinger equation [17]:
2 1
Ez v ( z ) (5)
v ( z ) + V ( z ) v ( z ) =
2 z mz ,e z
2 1
Ez v ( z ) (6)
v ( z ) + V ( z ) v ( z ) =
2 z mz , h z
V ( z ) = q ( z ) + EC ( z )
V=
( z ) q ( z ) + EV ( z )
+ t* ( z , kt ) t ( z , kt ) g 4
k =1
k BT
2
E E ( kt )
mt ml ln 1 + exp F
k BT
E ( kl ) E F
l* ( z , kl ) l ( z , kl ) g 2 mt , h ln 1 + exp
k BT
k =1
(8)
(9)
(10)
silicon regions are included. While the above currentdensity equations correspond to the steady state conditions, the continuity equations deal with time-dependent
phenomena such as low-level injection, generation and
recombination. Qualitatively, the net change of carrier
concentration is the difference between generation and
recombination, added to the net current flowing in and
out of the region of interest. The continuity equations are
[18]:
ni
n
2n
n n0 p0 + ni
=
Gni i
+ ni ni i + nii i + Dni 2i
t
ni
zi
zi
p0
zi
OPEN ACCESS
(7)
E F E ( kl )
l* ( z , kl ) l ( z , kl ) g 2 mt ln 1 + exp
k BT
k =1
p(z)
=
AL.
(11)
MNSMS
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AL.
41
pi
p p0 n0 + p
p
2 pi
=
G pi i
pi pi i pii i + D pi
t
pi
n0
zi
zi
zi2
where Gni and G pi are the electron and hole generation rates respectively, no and po are the electron and
hole free carrier concentrations at thermodynamic equilibrium, ni and pi are respectively the electron and
hole mobilities, Dni et D pi are the electron and hole
respective diffusion coefficients, ni and pi are the
electron and hole free carrier concentration in the ith
CB
CB
J Cond
+ J=
ni ni
diff
i
n
2n
+ nii i + Dni 2i
zi
zi
zi
e
=
ni *,ni
m
i ,e
VB
VB
+ J diff
=
pi pi
J Cond
i +1 2i + i 1 e ni
+ *,
2
m
( hzi )
i ,e
The conduction and diffusion current density in conduction and valence band respectively are written using
the rates of electron and hole ni , pi concentrations in
the ith point of mesh as following [19]:
CB
CB
J Cond
+ J diff
gin1i ni 1 ni gini +1 ni gini 1 + ni +1 gin+1i
(15)
J
+J
VB
diff
p
i 1i i 1
i +1 i 1 ni +1 ni 1 kT e ni
+
q m*,
2hzi
i ,e
( 2hzi )
+ ni g
p
i i +1
+ ni g
p
i i 1
ni +1 gip+1i
i +1 2i + i 1 pi +1 pi 1 kT e pi
+
2
q m*,
2hzi
( hzi )
i,h
ii) The recombination and band-to-band tunneling current densities in conduction and valence bands respectively
The tunneling current density along the z-direction
between two conducting regions through a forbidden region can be written as [20]:
CB
CB
+ J tunneling
J Recombination
ni nI
(17)
Rni
qmi*,.e
2 2 3
J vB
f A N AT ( Ez , kt ) (1 f B ) N B dEz
i
Recombination
=
+
vB
+ J tunneling
f A ( Ez ) =
qm
2
OPEN ACCESS
f B N BT Ezi , kt (1 f A ) N A dEzi
((
) )
f B ( Ez ) =
(14)
((
) )
(20)
(21)
+g
(18)
Rpi
pi +1 2 pi + pi +1
2
( hzi )
ni
n n0 p0 + ni
= i
p0
t
ni
pi nI
*,
i .h
2 3
(13)
(16)
ni +1 2ni + ni 1
2
( hzi )
i
p
2 pi
pii i + D pi
zi
zi
zi2
e pi 2i + i 1 pi +1 pi 1 e pi
=
*, i +1
*,
2
m
m
2hzi
( hzi )
i,h
i,h
VB
Cond
(12)
n
i 1i i 1
(22)
ni g
n
i i +1
n
i i 1
ni g
+ ni +1 g
p
i i +1
+ pi +1 g
n
i +1i
p p0 n0 + p
pi
= i
n0
t
pi
g
p
i +1i
pi +1 pi g
(23)
p
i i +1
pi g
p
i +1i
MNSMS
N. SFINA ET
42
EC
//
EFp
region A
region B
EFn
//
Ev
Figure 3. Energy band diagrams showing breakdown mechanisms of tunneling band to band in Si1yGy/Si/Si1xGx/
Si/Si1yGy MQW strain compensated photodetector device.
k BT
(24)
q 3 (i i +1 )
k BT
exp EC i
16 i 0 hzi
q (i +1 i )
giP+1i = 0i p exp
k BT
(25)
3
q (i +1 i )
k BT
exp EV i
16 i 0 hzi
0i n
=
k BT e ni 1
k BT
1
ni (T )
=
(26)
2
q mi*,,e ( hzi )2
q
( hzi )
=
0i p
k BT e pi 1
k BT
1
=
pi (T )
(27)
2
q mi*,, h ( hzi )2
q
( hzi )
AL.
q N D ( z ) N A ( z ) n ( z ) + p ( z )
( z ) ( z ) =
0
z
z
(28)
A =
(29)
where A is the three-diagonal matrix; is the eigenvector including the values i of discrete mesh and
is the eigenvalue of energy. The same finite-difference method with an identical mesh has been used for
Poisson Equation (28) solver. This means that we have
solved a system of differential equations in their discretization form within the three-point finite difference
scheme [20,21].
The interaction procedure is used to obtain a self-consistent solution of the Schrdinger equation (5 and 6), the
kinetic equation system for the thermally activated carrier transport (22, 23, 24 and 25) and the Poisson equation
(28). (i) Starting with a trial potential V (z ) with an
original potential distribution which can be assumed
within the equilibrium conditions, (ii) assuming the justified Boltzmann approximation for valence electrons and
(iii) considering the constancy of the quasi-Fermi level in
the contact region and its linear spreading in the active
part of device, the wave functions and their corresponding eigenvalues of energy have been defined from the
solution of the Schrdinger equation. These parameters
are used to calculate the electron density distribution
(Equations (9) and (10)) with additional accounting for
the thermally activated contribution (Equations (22) and
(23)), followed by computation of the potential distribution using the Poisson equation (28). The new potential
energy V ( z ) is then obtained from Equations (7) and
(8). After extracting the self-consistent solutions of the
Schrdinger and Poisson equations providing the potential distribution to be known, the distribution of charge
carrier density along the structure is again defined. The
MNSMS
N. SFINA ET
=
l ( t ),1 exp ikl ( t ) (1) z + A exp ikl ( t ) (1) z
l ( t ), N = B exp ikl ( t ) ( N ) z
(30)
T E x ( z ) , kl ( t ) =
kl ( t ) ( N )
kl ( t ) (1)
(31)
AL.
43
N. SFINA ET
44
100
E- =0.24 eV
2
10-4
(a)
AL.
Transmission coefficient
10-8
10-12
10-16
10-20
10-24
10-28
10-32
10-36
transverse mass
Longitudinal mass
10-40
10-44
0,0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
Energy (eV)
100
(b)
10-4
Transmission coefficient
10-8
10-12
10-16
10-20
10-24
10-28
10-32
10-36
hh transverse mass
lh transverse mass
10-40
10-44
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Energy (eV)
Figure 4. Transmission coefficients versus electron energy for seven W-period strained quantum wells for: (a) the transverse
and longitudinal effective masses, the active zone of p-i-n junction; (b) the light-hole and heavy-hole incidence.
101
7-MQWs i-Si0.4Ge0.6/Si/Si0.75Ge0.25
10
10-1
10-2
10-3
50 k
80 k
100k
150k
200k
250k
300k
350k
10-4
10-5
10-6
10-7
-6
-4
-2
MNSMS
N. SFINA ET
101
S=100m
AL.
45
7-MQWs i-Si0.4Ge0.6/Si/Si0.75Ge0.25
10
10-1
10-2
10-3
10-4
10-5
10-6
T=300 K
-7
10
-6
-5
-4
-3
-2
-1
value
0.24 eV [13]
0.15 eV [13]
0.4 eV [13]
0.3 eV [13]
0.33 m0 [25]
0.2 m0 [25]
0.9 m0 [25]
4
C
2
C
lh
0.17 m0 [26]
0.12 m0 [26]
0.233 m0 [26]
hh
0.29 m0 [26]
9 s [27]
OPEN ACCESS
9 s [27]
(m
1 2
( mi,h )
1 2
i ,e
T 3 2 [28]
T 3 2 [28]
MNSMS
N. SFINA ET
46
also described thoroughly the behavior of total dark current density with reverse bias application. Note that the
resulting reverse bias current and the current conducted
through the shunt resistance overlap each other in Figure
6. Thus, it is the current flowing through the shunt resistance that dominates the reverse characteristics of the
diode. It is suggested that the degradation of the dynamic
resistance and a dominant shunt current in the reverse
bias are related. Current-voltage (I-V) calculation was
performed using the above model at 300 K. Figure 7
shows the I-V characteristics of a typical diode. The
breakdown voltage was 5.75 V at 300 K. As shown in the
inset, a low dark current of 4.7 104 A/cm2 at 1 V was
obtained at 300 K. This is one order of magnitude lower
than that reported in Ref. [31]. However, it is still much
higher than the ideal dark current of pure silicon diodes.
This may be due to additional generation processes in the
silicon quantum wells and the Si0.75Ge0.25 layers, i.e., the
emission of carriers from the potential wells formed by
these regions and the silicon layers. The surface states
can also contribute to the dark current for the description
of the diffusion, generation-recombination, and the barriers tunneling affect. At 50 K, the dark current density
was in range of 1 103 A/m2 corresponding to a differential-resistance-area-product at zero bias of 136 cm2.
The profile of the R0A versus 1000/T curve in Figure 8
establishes that the details of modeled values to be reported elsewhere indicate that the dark current is dominated by four different mechanisms in four different
temperature regimes. From 50 to 100 K, the device per
AL.
formance is limited by the temperature-insensitive barriers tunneling effect [32] that causes the device performance not to be good more than 100 K, the thermally
generated carriers produce a stronger generation-recombination and diffusion current. From 100 to 125 K, the
device is limited by the generation-recombination with
an interesting recombination lifetime in the depleted region while above 125 K, the diffusion current becomes
the dominant component. In this regime, the device performance is approaching those III-V devices [33]. The
differential-resistance-area-product at zero bias as a
function of 1000/T for 7 and 35 W-periods have been
calculated and are shown in Figure 8. Simulation of I-V
characteristics of
Si1yGey/Si/Si1xGex/Si/Si1xGex/Si/Si1yGey structure has
shown that the electron tunneling current is higher than
the hole tunneling current. This is because of the large
difference in the barrier heights for electrons and holes.
Figure 9 shows the dark current density without excitation and the current density with excitation caused by
external influences such as the optical excitation with
photons or impact ionization under large electric fields of
a typical device shown in Figure 1(b). In order to obtain
the best agreement between experimental values and
numerical simulation, we showed that the performed
calculations have good correlation with experimental
results [34,35], and the weak dependence of dark current
peak shift are explained by the difference of offset values
in each devices. Figure 10 shows the calculated energy
T=300 K
6,0x10-6
101
S=100m
7-MQWs i-Si0.4Ge0.6/Si/Si0.75Ge0.25
100
4,0x10-6
Conduction
10-1
10-2
10-3
10-4
10-5
2,0x10-6
10-6
-6
-4
-2
Diffusion
Recombaination
0,0
V=1,25V
-2,0x10-6
Band to band tunneling
-4,0x10-6
-8
-6
-4
-2
OPEN ACCESS
MNSMS
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AL.
47
Temperature (K)
103
400
200
100
75
50
32K
102
37K
667K
101
G-R
64meV
R0A ( cm2)
685K
100
Diffusion
10-1
S=100m
1865K 176meV
Conduction
7W periods
35W periods
-2
10
795K 75meV
Thermally activated
10-3
10
12
14
16
18
20
-1
(1000/T)(K )
Figure 8. Zero-bias resistance area product of the p-i-n heterojunction based on Si0.75Ge0.25/Si/Si0.4Ge0.6/Si/Si0.75Ge0.25 MQW
strain-compensated strained structures for 7 W-periods and 35 W-periods versus the inverse temperature 1000/T relation
shows five distinct regimes with different dominant mechanisms: Thermally activated, conduction, diffusion, generation-recombination, and barriers tunneling effect.
101
10-5
T=300K
100
10-1
10-7
10-2
10-8
10-3
10-9
10-4
10-10
10-11
10-5
-6
-4
-2
Current ID(A)
10-6
10-6
Bias voltage
Figure 9. Current densities versus the bias current with and without optical excitation at room temperature. The excitation is
caused by external influences such as the optical excitation with photons or impact ionization under large electric fields at 300
K.
OPEN ACCESS
MNSMS
N. SFINA ET
48
AL.
(b)
(a)
0,0
//
EC
0,0
Zero Bias
-0,5
++++
-1,0
- - - -
-1,5
EFn
Energy (eV)
EFp
-2,0
Vbias= -0.6V
EFp
-1,5
-2,0
//
-2,5
Ev
0
50
100
150
200
EFn
-2,5
-3,0
-3,0
0
(C)
0,0 E
C
0,2
Vbias= 0.6 V
EC
150
200
250
fhh1
-1,0
EFn
-1,0
fhh1
-1,1
EV
//
e1
-0,2
++++
-1,2
//
fe1
- - - - EFn
-0,2
EFn
100
Vbias= 1.25 V
(d)
0,0
fe1
50
Z(nm)
Energy (eV)
0,2
Ev
//
250
Z(nm)
Energy (eV)
//
-0,5
-1,0
Energy (eV)
EC
hh1
EFn
//
-1,2
EV
-1,3
-1,4
0
50
100
Z(nm)
150
200
250
50
100
Z(nm)
150
200
250
Figure 10. (a) Edges of the conduction and valence bands of the Si0.75Ge0.25/Si/Si0.4Ge0.6/Si/Si0.75Ge0.25 MQW strain-compensated strained structures optimally designed for 1.55 m detection. The Fermi levels are drawn with their wave functions at
zero bias; (b) Band diagram for a p-i-n photodetector under a reverse bias (0.6V) at room temperature. EFp and EFn are
the Fermi levels of conduction and valence bands; (c) The p-i-n heterojunction at direct bias (+0.6V) with the Fermi levels
and wave functions; (d) The modeling heterostructure at the mode of the plat band under Vbias = 1.25V. The Fermi levels
and the e1 and hh1 quantum levels are drawn with their relative wave functions.
N. SFINA ET
OPEN ACCESS
49
REFERENCES
[1]
[2]
[3]
[4]
B. Levine, Quantum-Well Infrared Photodetectors, Journal of Applied Physics, Vol. 74, No. 8, 1993, p. R1.
http://dx.doi.org/10.1063/1.354252
[5]
[6]
[7]
[8]
[9]
5. Conclusion
The carrier transport in p-i-n
Si1yGey/Si/Si1xGex/Si/Si1xGex/Si/Si1yGey MQW device
has been modeled on the basis of a self-consistent solver
of the Schrdinger, Poisson, and kinetics equations. We
have found the range of the structural parameters, thickness, and composition providing a realistic epitaxy of the
optimized Si/Si1xGex/Si photodetectors built-on strained
Si0.75Ge0.25/Si/Si0.4Ge0.6/Si/Si0.75Ge0.25 quantum wells embedded in p-Si0.75Ge0.25 and n-Si0.75Ge0.25 that act as
pre-confinement regions of the electronic charge. The
computer simulation has shown insignificant contribution
of the 2D-2D carries transfer from states localized in the
pre-confinement silicon well due to the high potential
barrier at Si/Si0.4Ge0.6 interface. The electrical characterristics J-V of the infrared p-i-n photodetector have been
modeled by using our quantum transport model. It has
shown four distinct regimes with different dominant mechanisms, the conduction current density, diffusion current density, recombination current density, and tunneling band-to-band current density. The reverse bias characteristics are, however, limited by the shunt resistance
and the band-to-band tunneling contribution. Zero-bias
resistance area product of the diode is calculated and
found to be limited by four distinct regimes at room
temperature for 7 and 35 Si1xGex/Si W-periods. This
heterostructure can be used to create a photodetector that
is sensitive to 1.55-m-light when grown directly on
silicon with using virtual SiGe virtual substrate.
AL.
[10] P. Boucaud, M. E. Kurdi and J. M. Hartmann, Photoluminescence of a Tensilely Strained Silicon Quantum Well
on a Relaxed SiGe Buffer Layer, Applied Physics Letters,
Vol. 85, No. 1, 2004, p. 46.
http://dx.doi.org/10.1063/1.1766073
[11] N. Sfina, J. Lazzari, J. Derrien, F. A. dAvitaya and M.
Said, Strain-Balanced Si1xGex/Si Type II Quantum
Wells for 1.55 m Detection and Emission, The European Physical Journal B, Vol. 48, No. 2, 2005, pp. 151156. http://dx.doi.org/10.1140/epjb/e2005-00389-6
[12] N. J. Ekins-Daukes, K. Kawaguchi and J. Zhang, StrainBalanced Criteria for Multiple Quantum Well Structures
and Its Signature in X-Ray Rocking Curves, Crystal
Growth & Design, Vol. 2, No. 4, 2002, pp. 287-292.
http://dx.doi.org/10.1021/cg025502y
[13] C. G. Van de Walle and R. M. Martin, Theoretical CalMNSMS
N. SFINA ET
50
AL.
http://dx.doi.org/10.1103/PhysRevB.72.193306
[28] J. Millman and A. Grabel, Dispositifs Semiconducteurs, Jacob Millman, Livres, 1989.
[15] S. M. Sze, Physics of Semiconductor Devices Academic, John Wiley and Sons, Hoboken, 1981.
[30] V. Ryzhii, The Theory of Quantum-Dot Infrared Phototransistors, Semiconductor Science and Technology, Vol.
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http://dx.doi.org/10.1088/0268-1242/11/5/018
OPEN ACCESS
MNSMS
N. SFINA ET
AL.
51
6. Appendix A
In the following, we determine the conduction and the diffusion current densities in conduction band respectively; these
currents are given by:
e
CB
=
J Cond
ni *,ni
m
i ,e
i +1 2i + i 1 e ni
+ *,
2
m
( hzi )
i ,e
i +1 i 1 ni +1 ni 1
2hzi
( 2hzi )
kT e ni
CB
J diff
=
q m*,
i ,e
e
CB
CB
J Cond
ni *,ni
=
+ J diff
m
i ,e
i +1 2i + i 1 e ni
+ *,
2
m
( hzi )
i ,e
(A.1)
ni +1 2ni + ni 1
2
( hzi )
(A.2)
i +1 i 1 ni +1 ni 1 kT e ni
+
q m*,
2hzi
i ,e
( 2hzi )
ni +1 2ni + ni 1
(A.3)
2
( hzi )
We consider a system of rate equations describing the elastic tunneling carrier transfer mechanism, the charge flow
through the device and the thermally activated emission over the barrier. In this case, Equation (A3) is replaced by:
CB
CB
+ J diff
gin1i ni 1 ni gini +1 ni gini 1 + ni +1 gin+1i
J Cond
(A.4)
The expression of gini +1 is taken from the works of Julia A. Berashevich et al. [39]:
q i i +1
i
=
gini +1 on
exp
k BT
) exp E
Ci
q 3 i i +1
k T
B
16 i 0 hzi
(A.5)
q 3 i i +1
exp EC i
16 i 0 hzi
k BT 1
(A.6)
Within the approximation, the carrier transport is described by kinetic equations. The rates of electron in the ith point
of mesh gini +1 become:
q (i i +1 )
+
gin+1i 0i n 1 +
k
T
B
(A.7)
0i n
q (i 1 i )
k BT
ni 1 + 0i n
q (i i +1 )
k BT
q (i +1 i )
k BT
ni 0i n
q (i i 1 )
k BT
ni
(A.8)
ni +1 +
q0i n
(i +1 2i + i +1 )
k BT
(A.9)
q0i n
q i
(i 1 i ) + ni +1 0 n (i +1 i ) +
kB T
k BT
The following development of Equation (A.3) in one order gives the same terms than Equation (A.9).
kT e ni
CB
CB
J Cond
=
+ J diff
*,
q mi ,e
OPEN ACCESS
ni +1 2ni + ni 1
e
+ ni *,ni
2
m
( hzi )
i ,e
i +1 2i + i 1 e ni
+ *,
2
m
( hzi )
i ,e
i +1 i 1 ni +1 ni 1
(A.10)
2hzi
( 2hzi )
MNSMS
N. SFINA ET
52
AL.
CB
CB
J Cond
+ J diff
kT e ni
q m*,
i ,e
1
e
n 2ni + ni 1 ) + ni *,ni
2 ( i +1
m
( hzi )
i ,e
e
+ ni 1 *,ni
m
i ,e
i +1 2i + i 1
e
+ ni +1 *,ni
2
m
( hzi )
i ,e
1
i ) (A.11)
2 ( i +1
( hzi )
1
i ) +
2 ( i 1
( hzi )
With simple identification between equations (A.9) and (A.11) we can obtain:
ni
e
q0i n
i +1 2i + i +1 ) ni *,ni
(=
m
k BT
i ,e
1
k BT e ni
2=
i + i 1 ) 0i n
2 ( i +1
q mi*,,e
( hzi )
e
q0i n
n=
(i +1 i ) ni +1 *,ni
i +1
k BT
mi ,e
1
k BT e ni
=
i ) 0i n
2 ( i +1
q mi*,,e
( hzi )
2
( hzi )
e
q0i n
n=
(i 1 i ) ni 1 *,ni
i 1
kB T
mi ,e
1
k BT e ni
=
i ) 0i n
2 ( i 1
q mi*,,e
( hzi )
2
( hzi )
2
( hzi )
kT e ni 1
k BT e ni 1
2ni + ni 1 ) 0i n
0i n=
n =
( ni +1 2ni + ni 1 )
*,
2 ( i +1
q mi*,,e ( hzi )2
q mi ,e ( hzi )
With this development we can prove that the frequency of the rates in the conduction band is:
=
0i n
k BT e ni 1
k BT
1
=
ni (T )
*,
2
2
q mi ,e ( hzi )
q
( hzi )
(A.12)
Using the same calculation for the conduction and diffusion currents respectively in the valence band we can prove
that the frequency of the rates in the valence band is given by:
0i p
=
OPEN ACCESS
k BT e pi 1
k BT
1
pi (T )
=
*,
2
2
q mi , h ( hzi )
q
( hzi )
(A.13)
MNSMS