Beruflich Dokumente
Kultur Dokumente
DESCRIPTION
Continuous-time operation
Fast power-on time
Low noise
Stable operation over full operating temperature range
Reverse battery protection
Solid-state reliability
Factory-programmed at end-of-line for optimum
performance
Robust EMC performance
High ESD rating
Regulator stability without a bypass capacitor
Packages:
3-Pin SOT23W (suffix LH)
Not to scale
VCC
To all subcircuits
Regulator
VOUT
Amp
Gain
Offset
Trim
Control
GND
A1202
and A1203
Selection Guide
Part Number
Packing*
Mounting
Ambient, TA
BRP (Min)
BOP (Max)
A1202LUA-T
40C to 150C
75
75
40C to 85C
95
95
A1203EUA-T
A1203LLHLT-T
A1203LLHLX-T
A1203LUA-T
40C to 150C
Symbol
Notes
Rating
Units
Supply Voltage
VCC
30
VRCC
30
V
V
VOUT
30
VROUT
0.5
IOUTSINK
25
mA
Unlimited
Range E
40 to 85
Range L
TA
40 to 150
TJ(max)
165
Tstg
65 to 170
GND
Storage Temperature
3
VOUT
VOUT
Package LH
GND
VCC
1
VCC
Package UA
Terminal List
Number
Package LH
Package UA
1
1
2
3
3
2
Name
VCC
VOUT
GND
Description
Connects power supply to chip
Output from circuit
Ground
A1202
and A1203
OPERATING CHARACTERISTICS over full operating voltage and ambient temperature ranges, unless otherwise
noted
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
VCC
3.8
24
Electrical Characteristics
Supply Voltage1
Output Leakage Current
Output On Voltage
Power-On Time2
Output Rise Time3
Output Fall Time3
Supply Current
IOUTOFF
10
VOUT(SAT)
215
400
mV
tPO
tr
tf
ICCON
B > BOP
3.8
7.5
mA
ICCOFF
B < BRP
3.5
7.5
mA
IRCC
VRCC = 30 V
10
mA
VZ
32
IZ
VZ = 32 V; TA = 25C
30
mA
26
75
Magnetic Characteristics5
Operate Point
Release Point
Hysteresis
A1202
BOP
BRP
BHYS
A1203
26
95
A1202
75
26
A1203
95
26
A1202
30
52
30
52
A1203
1 Maximum voltage must be adjusted for power dissipation and junction temperature, see Power Derating section.
2 For V
CC
slew rates greater than 250 V/s, and TA = 150C, the Power-On Time can reach its maximum value.
CC(max)
+ 22 mA.
5 Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and as a positive value for south-polarity magnetic fields. This so-called alge-
braic convention supports arithmetic comparison of north and south polarity values, where the relative strength of the field is indicated by the absolute value of B, and the
sign indicates the polarity of the field (for example, a 100 G field and a 100 G field have equivalent strength, but opposite polarity).
A1202
and A1203
THERMAL CHARACTERISTICS may require derating at maximum conditions, see application information
Characteristic
Symbol
Test Conditions
RJA
Value
Units
228
C/W
Package LH, 2-layer PCB with 0.463 in.2 of copper area each side
connected by thermal vias
110
C/W
165
C/W
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
VCC(max)
20
40
60
80
100
VCC(min)
120
140
160
180
Temperature
(C)
Power Dissipation
versus Ambient
Temperature
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
Pa
(R cka
ge
J
A =
L
11 H, 2
0 -la
Pac
C/ ye
W
(R kage
) r PC
UA
JA =
B
,
165 1-la
C/ yer
W)
PC
B
Pac
k
(R age LH
,
JA =
228 1-laye
C/W r PC
B
)
20
40
60
80
100
120
Temperature (C)
140
160
180
A1202
and A1203
(A1202/03)
8.0
8.0
7.0
7.0
VCC (V)
5.0
24
3.8
4.0
3.0
6.0
ICCON (mA)
6.0
ICCON (mA)
(A1202/03)
40
25
150
4.0
3.0
2.0
2.0
1.0
1.0
TA (C)
5.0
50
50
TA (C)
100
150
15
20
25
(A1202/03)
(A1202/03)
8.0
8.0
7.0
7.0
6.0
VCC (V)
5.0
24
3.8
4.0
3.0
ICCOFF (mA)
ICCOFF (mA)
10
VCC (V)
6.0
TA (C)
5.0
40
25
150
4.0
3.0
2.0
2.0
1.0
1.0
0
0
50
50
TA (C)
100
150
10
15
20
25
(A1202/03)
400
VCC (V)
(A1202/03)
400
350
350
300
300
250
VCC (V)
200
24
3.8
150
100
TA (C)
VOUT(SAT) (mV)
VOUT(SAT) (mV)
250
40
25
150
200
150
100
50
50
0
50
50
TA (C)
100
150
10
15
20
25
VCC (V)
A1202
and A1203
70
60
BOP (G)
50
VCC (V)
40
24
12
3.8
30
20
10
0
-50
50
TA (C)
100
150
-5
-15
BRP (G)
-25
VCC (V)
-35
24
12
3.8
-45
-55
-65
-75
-50
50
TA (C)
100
150
80
75
70
BHYS (G)
65
VCC (V)
60
24
12
3.8
55
50
45
40
35
30
-50
50
100
150
TA (C)
A1202
and A1203
field is reduced beyond the BRP level, the device switches back to
the high state, as shown in panel B of Figure1. Devices exhibiting negative switch behavior operate in a similar but opposite
manner. A north polarity field of sufficient strength, >BRP, (more
north than BRP) is required for operation, although the result is
that VOUT switches high, as shown in panelC. When the field is
reduced beyond the BOP level, the device switches back to the low
state.
The typical output behavior of the A120x devices is latching.
That is, switching to the low state when the magnetic field at the
Hall element exceeds the operate point threshold, BOP. At this
point, the output voltage is VOUT(SAT). When the magnetic field is
VS
VCC
A120x
(D)
(B)
V+
(C)
V+
V+
VOUT
B
BHYS
B+
BOP
BRP
B+
BOP
BOP
BHYS
B 0
VOUT(SAT)
0
BRP
B+
VOUT(SAT)
0
BRP
Switch to High
Switch to High
VOUT
VOUT(SAT)
VCC
Switch to Low
Switch to Low
VOUT
VCC
Switch to Low
Switch to High
VCC
Output
VOUT
GND
In contrast to latching, when a device exhibits unipolar switching, it only responds to a south magnetic field. The field must be
of sufficient strength, > BOP, for the device to operate. When the
(A)
RL
BHYS
These behaviors can be exhibited when using a circuit such as that shown in panel D. Panel A displays the hysteresis when a device exhibits
latch mode (note that the BHYS band incorporates B= 0), panel B shows unipolar switch behavior (the BHYS band is more positive than B=0),
and panel C shows negative switch behavior (the BHYS band is more negative than B=0). Bipolar devices, such as the 120x family, can operate in any of the three modes.
A1202
and A1203
reduced to below the release point threshold, BRP, the device output, VOUT, goes high. The values of the magnetic parameters are
specified in the Magnetic Characteristics table, on page 3. Note
that, as shown in Figure 1, these switchpoints can lie in either
north or south polarity ranges.
The A120x family is designed to attain a small hysteresis, and
thereby provide more sensitive switching. Although this means
that true latching behavior cannot be guaranteed in all cases,
proper switching can be ensured by use of both south and north
magnetic fields, as in a ring magnet. The hysteresis of the A120x
family allows clean switching of the output, even in the presence
of external mechanical vibration and electrical noise.
Continuous-time devices, such as the A120x family, offer the fastest available power-on settling time and frequency response. Due
to offsets generated during the IC packaging process, continuoustime devices typically require programming after packaging to
tighten magnetic parameter distributions. In contrast, chopperstabilized switches employ an offset cancellation technique on
the chip that eliminates these offsets without the need for afterpackaging programming. The tradeoff is a longer settling time
and reduced frequency response as a result of the chopper-stabilization offset cancellation algorithm.
The choice between continuous-time and chopper-stabilized
designs is solely determined by the application. Battery management is an example where continuous-time is often required. In
these applications, VCC is chopped with a very small duty cycle
in order to conserve power (refer to Figure 4). The duty cycle
is controlled by the power-on time, tPO, of the device. Because
continuous-time devices have the shorter power-on time, they are
the clear choice for such applications.
Continuous-Time Benefits
VCC
t
VOUT
t
Output Sampled
tPO(max)
This figure illustrates the use of a quick cycle for chopping VCC in order to conserve battery power. Position 1, power is applied to the
device. Position 2, the output assumes the correct state at a time prior to the maximum Power-On Time, tPO(max). The case shown is where
the correct output state is HIGH. Position 3, tPO(max) has elapsed. The device output is valid. Position 4, after the output is valid, a control unit
reads the output. Position 5, power is removed from the device.
A1202
and A1203
A1202
and A1203
Power Derating
The device must be operated below the maximum junction
temperature of the device, TJ(max). Under certain combinations of
peak conditions, reliable operation may require derating supplied
power or improving the heat dissipation properties of the application. This section presents a procedure for correlating factors
affecting operating TJ. (Thermal data is also available on the
Allegro MicroSystems Web site.)
The Package Thermal Resistance, RJA, is a figure of merit summarizing the ability of the application and the device to dissipate
heat from the junction (die), through all paths to the ambient air.
Its primary component is the Effective Thermal Conductivity, K,
of the printed circuit board, including adjacent devices and traces.
Radiation from the die through the device case, RJC, is relatively
small component of RJA. Ambient air temperature, TA, and air
motion are significant external factors, damped by overmolding.
The effect of varying power levels (Power Dissipation, PD), can
be estimated. The following formulas represent the fundamental
relationships used to estimate TJ, at PD.
PD = VIN IIN
T = PD RJA
TJ = TA + T
(1)
(2)
(3)
10
A1202
and A1203
+0.12
2.98 0.08
D
1.49
4 4
A
+0.020
0.180 0.053
0.96
D
+0.19
1.91 0.06
+0.10
2.90 0.20
2.40
0.70
0.25 MIN
1.00
0.55 REF
0.25 BSC
0.95
Seating Plane
Branded Face
Gauge Plane
8X 10
REF
1.00 0.13
A1202 and
A1203
NNT
+0.10
0.05 0.05
0.95 BSC
0.40 0.10
11
A1202
and A1203
45
B
4.09
+0.08
0.05
1.52 0.05
E
2.04
2 X 10
1.44 E
3.02
Mold Ejector
Pin Indent
+0.08
0.05
45
Branded
Face
2.16 MAX
0.51 REF
A
1
0.79 REF
3
0.43
+0.05
0.07
0.41
+0.03
0.06
1.27 NOM
NNT
15.75 0.25
1
D
12
A1202
and A1203
Revision History
Revision
Revision Date
17
18
January 1, 2015
Description of Revision
Update LH package branding
Added LX option to Selection Guide
13