BRT 21, BRT 22, BRT 23

SITAC AC Switches
With Zero
Voltage
Switch
Without
Zero
Voltage
Switch
AC switch with zero-voltage detector
Electrically insulated between input and output circuit
Microcomputer-compatible by very low trigger current
UL-tested (file no. E 52744), code letter "J"
Available with the following options:
Option 1: VDE 0884-approved
Option 6: Pins in 10.16 mm spacing
Option 7: Pins for sourface mounting

Type

Opt.

VDRM

ITRMS

IFT

dv/d tcr

Marking

Ordering Code

BRT 21 H

400 V

300 mA

2 mA

10 kV/s

BRT 21 H

C67079-A1020-A6

BRT 21 H

1 + 6 400 V

300 mA

2 mA

10 kV/s

BRT 21 H

C67079-A1050-A16

BRT 22 H

600 V

300 mA

2 mA

10 kV/s

BRT 22 H

C67079-A1021-A6

BRT 22 H

600 V

300 mA

2 mA

10 kV/s

BRT 22 H

C67079-A1051-A5

BRT 22 H

600 V

300 mA

2 mA

10 kV/s

BRT 22 H

C67079-A1051-A11

BRT 22 H

1 + 6 600 V

300 mA

2 mA

10 kV/s

BRT 22 H

C67079-A1051-A16

BRT 22 H

1 + 7 600 V

300 mA

2 mA

10 kV/s

BRT 22 H

C67079-A1051-A17

BRT 22 M -

600 V

300 mA

3 mA

10 kV/s

BRT 22 M C67079-A1021-A10

BRT 22 M 1

600 V

300 mA

3 mA

10 kV/s

BRT 22 M C67079-A1051-A6

BRT 23 H

800 V

300 mA

2 mA

10 kV/s

BRT 23 H

C67079-A1022-A6

BRT 23 H

800 V

300 mA

2 mA

10 kV/s

BRT 23 H

C67079-A1052-A8

BRT 23 H

800 V

300 mA

2 mA

10 kV/s

BRT 23 H

C67079-A1052-A11

BRT 23 H

1 + 6 800 V

300 mA

2 mA

10 kV/s

BRT 23 H

C67079-A1052-A14

300 mA

3 mA

10 kV/s

BRT 23 M C67079-A1022-A10

BRT 23 M -

800 V

Information

Package

50 pcs per tube P-DIP-6

Pin Configuration
1

Anode

Cathode
Kathode not

connected

Semiconductor Group

A1

do not

A2

connect

12.96

BRT 21, BRT 22, BRT 23

Maximum Ratings, at TTjj = 25 C, unless otherwise specified.
AC Switch
Parameter

Symbol

Max. Power dissipation

Ptot

Chip or operating temperature

Tj

-40 ...+ 100

Storage temperature

Tstg

-40 ...+ 150

VIS

5300

VRMS

Vref

500

VRMS

600

VDC

175

(group IIIa

Insulation test voltage

1)

Value

Unit

630

mW
C

between input/output circuit

(climate in acc. with DIN 40046, part2, Nov.74)
Reference voltage in acc. with VDE 0110 b
(insulation group C)

CTI

Creepage tracking resistance

(in acc. with DIN IEC 112/VDE 0303, part 1)

acc. to DIN
VDE 0109)

Ris

Insulation resistance

1012
1011

VIO = 500 V, TA = 25 C
VIO = 500 V, TA = 100 C
DIN humidity category, DIN 40 040

Creepage distance (input/output circuit)

7.2

Clearance (input/output circuit)

7.2

Parameter

Symbol

Value

Param VR

VR

Continuous forward current

IF

20

mA

Surge forward current,

IFSM(I)

1.5

Max. power dissipation,, t 10 s

s

Ptot

30

mW

mm

Input Circuit
Unit

Output Circuit
Parameter

Symbol

BRT

BRT BRT

21

22

23

600

800

Unit

Repetitive peak off-state voltage

VDRM

400

RMS on-state current

ITRMS

300

mA

Single cycle surge current (50 Hz)

ITSM(I)

Max. power dissipation

Ptot

3
600

Semiconductor Group

mW
12.96

BRT 21, BRT 22, BRT 23

Characteristics
at T
Tjj = 25 C, unless otherwise specified.
Input Circuit
Parameter

Symbol

Forward Voltage,

Values

Unit

min.

typ.

max.

VF

1.1

1.35 V

IR

RthJA

IF = 10 mA
Reverse current,

10

VR = 6 V
Thermal resistance 2)

750 K/W

junction - ambient
Output Circuit
Parameter

Symbol

Values
min.

typ.

Unit
max.

d v/dtcr

Critical rate of rise of off-state voltage

kV/s

VD = 0.67 VDRM, Tj = 25 C

10

VD = 0.67 VDRM, Tj = 80 C

VD = 0.67 VDRM, TTjj == 25

i/dttcrq
25 C,
C, ddi/d
15 A/ms
A/ms
crq 15

10

i/dttcrq
80 C,
C, ddi/d
VD = 0.67 VDRM, TTjj == 80
15 A/ms
crq 15

d v/dtcrq

Critical rate of rise of voltage at current

commutation
communication

Critical rate of rise of on-state current

d i/dtcr

A/s

Pulse current

Itp

tpp 55 s,
itpt/d
8 A/ms
t 8 A/s
s, ff == 100
100 Hz,
, d itpd/d
On-state voltage,

VT

2.3

IT = 300 mA
ID

Off-state current

TC = 25 C, VDRM

30

TC = 80 C, VDRM

12

100
1000

IH

80

500

RthJA

Holding current,

VD = 10 V
Thermal resistance 2)

125 K/W

junction - ambient

Semiconductor Group

12.96

BRT 21, BRT 22, BRT 23

Response Characteristics
at Tj = 25 C, unless otherwise specified.
Parameter

Symbol

Values
min.

typ.

Unit
max.

IFT1

Trigger current 1

mA

VD = 6 V
type H

0.4

type M

0.4

type H

type M

14

A/K
V

IFT2

Trigger current 2

Vop = 220 V, = 50 Hz,Tj = 100C

tpF > 10 ms

IFT1/Tj

Trigger current temperature gradient

IFT2/Tj
Inhibit voltage, IF = IFT1

VDINH

12

Inhibit voltage temperature gradient

VDINH /

-20

IDINH

7-

50

CIO

mV/K

Tj
Off-state current in inhibit state

200 A

IF = IFT1 , VDRM
Capacitance between input and output circuit

pF

VR = 0 V, f = 1 kHz

1) Static air, SITAC soldered in pcb or base plate.

2) Test AC voltage in acc. with DIN 57883, June 1980.
3) The SITAC switch is soldered in pcb or base plate.
4) Termocouple measurement has to be performed potentially separated to A1 and A2.
The measuring junction should be as near as possible at the case.
5) The SITAC zero voltage switch can be triggered only in the hatched area below the Tj curves.

Semiconductor Group

12.96

BRT 21, BRT 22, BRT 23

Characteristics
at T
Tjj = 25 C, unless otherwise specified.
Typical input characteristics
IF = (V F)

Typical output characteristics

IT = (V T)

Current reduction ITRMS = (TA)

Current reduction I TRMS = (TPIN5)

RthJ-PIN5 = 16,5 K/W 4)

RthJA = 125 K/W 3)

Semiconductor Group

12.96

BRT 21, BRT 22, BRT 23

Typical trigger delay time tgd = f(IF/IFT25C)
V D = 200V

Power dissipation for 40 ... 60 Hz

line operation
Ptot = (ITRMS)

Typ. inhibit current IDINH = (IF/IFT 25C)

V D = 800 V

Typ.static inhibit voltage limit 5)

V DINHmin = (IF/IFT 25C),parameter: Tj

Semiconductor Group

12.96

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