Workshop Program

NOTE: OCTOBER 3rd IS A NATIONAL HOLIDAY IN GERMANY. SHOPS ARE CLOSED.

Tuesday, October 3rd, 2006 Evening
15.00
19.00 On Site Registration
17.00 Workshop opens
17.00 21.00 Get Together Party
(food, drinks, cocktails + life music)
Wednesday, October 4th, 2006 On Site Registration 8.30
Morning 8.50 10.20

18.00

8.50 Opening Remarks

Session I Growth I
9.00 Growth.I,1 Growth of polar and non-polar ZnO/(Zn,Mg)O quantum well heterost
ructures
on Sapphire substrates
J.-M. Chauveau1, C. Morhain1, B. Vinter1, M. Lagt1, M. Teisseire1, B. Lo1, P.
Vnngus1, D. Buell1, C. Deparis1, T. Bretagnon2, P. Lefebvre2, P. Valvin2, B. Gil2,
M. Albrecht3
1CRHEA/CNRS, Valbonne-Sophia-Antipolis, France.
2CNRS
Universit Montpellier II, France.
3 Institut fr Kristallzchtung, Berlin, Germany
9.20 Growth.I,2 Polarity Selection of ZnO Epi-films on Rocksalt MgO(111) Substra
tes
Shengbai Zhang1, Ping Zhang1, Mao-Hua Du1, Qi-Kun Xue2
1National Renewable Energy Laboratory, Golden, Colorado, USA
2Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
9.40 Growth.I,3 Exciton-polariton emissions from ZnO epilayers grown by heliconwaveexcited-plasma sputtering epitaxy on a-plane sapphire using hightemperature-annealed self-buffer layers
S. F. Chichibu, N. Shibata, A. N. Fouda, T. Iijima, and T. Koyama
Institute of Applied Physics, University of Tsukuba, Japan
10.00 Growth.I,4 Effects of Ga and N doping on MBE growth of Zn-polar ZnO films
on sapphire
Hiroyuki Kato1, Akio Ogawa1, Hiroshi Kotani1, Michihiro Sano1, Takafumi Yao2
1Stanley Electric Co., Ltd., Yokohama, Japan.
2Center for Interdisciplinary Research, Tohoku University, Sendai, Japan
10.20 10.40 Coffee Break
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
1/18

Wednesday, October 4th, 2006 Late Morning 10.40

12.20

Session II Characterization I
10.40 Char.I,1 Optical and Electrical Properties of Hydrothermally Grown ZnO: Ef
fects of
Annealing in Forming Gas
DavidC. Look1,2, Michael Callahan3, Lionel Bouthillette3
1Semiconductor Research Center, Wright State University, Dayton, OH, USA
2Materials and Manufacturing Directorate, Air Force Research Lab., OH, USA
3Sensors Directorate, Air Force Research Laboratory, Hanscom AFB, MA USA
11.00 Char.I,2 Optical spectroscopy of A-plane ZnO epilayers grown on R-plane
sapphire substrates by MBE
C. Morhain1, B. Lo2, M. Teisseire1, J.-M. Chauveau1, B. Vinter1, M. Albrecht3
1 CRHEA-CNRS, Valbonne-Sophia -Antipolis, France
2 Universit Cheikh Anta, Dakar, Facult des Sciences et Techniques, Senegal
3 Institut fr Kristallzchtung, Berlin, Germany
11.20 Char.I,3 Carrier Capture by Ionized Impurities in ZnO Epilayers
Frank Bertram, Thomas Hempel, Sylke Petzold, Armin Dadgar,
Jrgen Christen, and Alois Krost
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg,
Germany
11.40 Char.I,4 Lattice dynamics of homoepitaxially grown ZnO and ZnO:Li layers
U. Haboeck1, A. Hoffmann1, C. Thomsen1, S. Lautenschlger2, J. Sann2, C.
Neumann2, and B.K. Meyer2
1Institut fr Festkrperphysik, Technische Universitt Berlin, Berlin, Germany
2I. Physikalisches Institut, Justus-Liebig-Universitt, Giessen, Germany
12.00 Char.I,5 Uniaxial Stress Effects on Hydrogen in ZnO
E.V. Lavrov, F. Brrnert, J. Weber
Technische Universitt Dresden, Dresden, Germany
12.20 14.00 Lunch
Wednesday, October 4th, 2006 Afternoon 14.00

15.20

Session III Growth II

14.00 Growth.II,1 Melt Growth of Bulk Zinc Oxide
Detlef Klimm, Detlev Schulz, Steffen Ganschow, Michael Neubert, Roberto Fornari
Institut fr Kristallzchtung, Berlin, Germany
14.20 Growth.II,2 Growth of ZnMnO films at low temperatures by Atomic Layer Depo
sition
A. Wjcik1, M. Godlewski1,2, K. Kopalko1, E.Guziewicz1, R. Jakiela1, R. Minikayev1
,
W. Paszkowicz1, M.Klepka1, M.Putkonen3, and L. Niinist3
1Institute of Physics, Polish Academy of Sciences, Warsaw, Poland2Dept. of Mathe
matics and Natural Sciences, Warsaw, Poland
3Laboratory of Inorganic and Analytical Chemistry, Helsinki, Finland
14.40 Growth.II,3 Influence of Atomic-Hydrogen Irradiation on Epitaxy and Proper
ties of ZnO
Layers Grown by Molecular Beam Epitaxy
A. Yoshikawa, S. Wakabayashi, M. Sasaki, X.Q. Wang, S.B. Che, and Y. Ishitani
Department of Electronics and Mechanical Engineering, Chiba University, Japan

4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
2/18

15.00 Growth.II,4 ZnCdMgO-based quantum well structures grown by molecular beam

epitaxy
for light-emitting applications
Sergey Sadofev, Sylke Blumstengel, Jian Cui, Joachim Puls, Fritz Henneberger
Institut fr Physik, Humboldt-Universitt, Berlin, Germany
15.20
15.40 Coffee Break
Wednesday, October 4th, 2006 Late Afternoon 15.40

17.00

Session IV Nanostructures
15.40 Nano.1 Guided Modes for Stimulated and Spontaneous Emission from ZnO Nanor
ods
J. Fallert, R. Hauschild, A. Urban, H. Zhou and H. Kalt
Institut fr Angewandte Physik, Universitt Karlsruhe, Germany
16.00 Nano.2 ZnO nanorods and their nanodevice applications
G.-C. Yi , J. Yoo, C.H. Lee, and H.J. Kim
National CRI Center for Semiconductor Nanorods and Department of Materials
Science and Engineering, POSTECH, Pohang, Korea
16.20 Nano.3 Glucose biosensors made of ZnO nanostructures
X. W. Sun1, 2, J. X. Wang1, Y. Lei3, A. Wei1, G. Q. Lo2
1School of Electrical & Electronic Engineering, Nanyang University, Singapore
2Institute for Microelectronics, Science Park II, Singapore
3School of Chemical and Biomedical Engineering, Nanyang University, Singapore
16.40 Nano.4 Device Grade Ultra-thin ZnO Quantum Wells Grown by Pulsed Laser
Deposition
Lalit M. Kukreja, Pankaj Misra
Thin Film Laboratory, Raja Ramanna Centre f. Advanced Technology, Indore, India
Wednesday, October 4th, 2006 Evening 17.00

19.00

17.00 Poster P I
(food, drinks, cocktails)
Thursday, October 5th, 2006 On Site Registration 8.30
Morning 9.00 10.20

18.00

Session V Characterization II
9.00 Char.II,1 Processes of Stimulated Emission in ZnO
C. Klingshirn, R. Hauschild, J. Fallert, A. Urban, H. Kalt
Institut fr Angewandte Physik, Universitt Karlsruhe, Germany
9.20 Char.II,2 Ultrafast Exciton and Biexciton Dynamics in a ZnO Thin Film
Hsiang-Chen Wang1, Yen-Cheng Lu1, Cheng-Yen Chen1, Fang-Yi Jen1, C. C.
Yang1, Bao-Ping Zhang2, and Yusaburo Segawa2
1Graduate Institute of Electro-Optical Engineering, Taiwan University, Taipei,
2Photodynamics Research Center, RIKEN Sendai, Japan
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
3/18

9.40 Char.II,3 Photoluminescence dynamics of surface-related emission in ZnO nan

orods
L. Wischmeier1, T. Voss1, I. Rckmann1, J. Gutowski1, A. C. Mofor2, A. Bakin2, A.
Waag2
1Institut fr Festkrperphysik, Universitt Bremen, Germany
2Institute of Semiconductor Technology, Techn. University Brauschweig, Germany
10.00 Char.II,4 Photoluminescence characterization of Zn1-xMgxO epitxial thin fi
lms grown on
ZnO by radical source molecular beam epitaxy
H. Shibata1, H. Tampo1, K. Matsubara1, A. Yamada1, K. Sakurai1, S. Ishizuka1, S.
Niki1, and M. Sakai2
1National Institute of Adv. Indust. Science and Technology, Tsukuba, Ibaraki, Ja
pan
2Department of Functional Materials Science, Saitama University, Saitama, Japan
10.20
10.40 Coffee Break
Thursday, October 5th, 2006 Late Morning 10.40

12.20

Session VI p-Doping
10.40 p-Doping.1 p-type Nitrogen- and Phosphorus-doped ZnO Thin Films Grown by P
ulsed
Laser Deposition on Sapphire Substrates
Jean-Paul Mosnier, S. Chakrabarti, B. Doggett, E.McGlynn, M.O. Henry
National Centre for Plasma Science and Technology, Dublin University, Ireland
11.00 p-Doping.2 Realization of p-type conductivity in ZnMgO by different method
s
Liping Zhu, Yuming Ye, Haihui Huang, Zhizhen Ye
State Key Laboratory of Silicon Materials, Zhejiang University, China
11.20 p-Doping.3 Structure and optoelectronic properties of n-type and p-type ph
osphorusdoped ZnO films
A. Allenic1, Y.B. Chen1, W. Guo1, G. Y. Zhao1, M. B. Katz1, Y. Che2, B. Liu2, Z.
D.
Hu2 and X.Q. Pan1
1Materials Science and Engineering Department, University of Michigan, MI, USA
2IMRA America, Inc., Ann Arbor, MI, USA
11.40 p-Doping.4 Growth and Characterization of undoped, Ga-doped n-type and GaN
codoped p-type ZnO thin films on ZnO wafer using RF magnetron sputtering
Il-Soo Kim1, Tae-Hwan Kim1, Sang-Hun Jeong2, Manoj Kumar1, Sang Sub Kim1
and Byung-Teak Lee1,1Photonic and Electronic Thin Film Laboratory, Gwangju, Kore
a.
2Gwangju Center, Korea Basic Science Institute, Gwangju, Korea
12.00 p-Doping.5 Doping and Compensation Effects of Nitrogen to ZnO Thin Film
Xiaonan Li1, Sally E. Asher1, Craig L. Perkins1, Lei L. Kerr2, Sukit Limpijumnon
g3,
S. B. Zhang1, Su-Huai Wei1, and Timothy J. Coutts1
1National Renewable Energy Laboratory, Golden, CO, USA
2Department of Paper and Chemical Engineering, Miami University, Oxford, OH
3School of Physics, Suranaree University of Technology, Thailand

12.20
14.00 Lunch
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
4/18

Thursday, October 5th, 2006 Afternoon 14.00

16.00

Session VII Ferromagnetism

14.00 Ferro.1 Nano-scale spinodal decomposition phase
in ZnO-based dilute magnetic semiconductors
M. Toyoda1, K. Sato 1 and H. Katayama-Yoshida 1
1The Institute of Scientific and Industrial Research, Osaka University, Japan.
14.20 Ferro.2 ZnO for spintronics
Varatharajan Rengarajan1, Ming Pan1, Matt Kane2, Nola Li2, Will Fenwick2, Ian
Ferguson2 and Jeff Nause1
1 Cermet, Atlanta, GA, USA2 School of ECE, Georgia Institute of Technology, Atla
nta, GA, USA
14.40 Ferro.3 Influence of annealing on the structure of Co thin films grown on
ZnO(000-1)
Dumont J.1, Seldrum T.1, Moisson C.2, Turover D.2, Sporken R.1
1Laboratoire de Physique des Matriaux Electroniques, Namur, Belgium.
2Novasic, NOVASiC Savoie Technolac, Le Bourget du Lac, France.
15.00 Ferro.4 Magnetism in Vanadium doped ZnO nanorods
E. Schlenker1, S. Sievers2, M. Albrecht2, C. Ronning3, B. Postels1, A. Bakin1, A
.C.
Mofor1, M. Kreye1, U. Siegner2, A. Waag1
1Institute of Semiconductor Technology, Universitt Braunschweig, Germany
2Physikalisch-Technische Bundesanstalt, Braunschweig, Germany3II. Institute of P
hysics, Georg-August Universitt Gttingen, Germany
15.20 Ferro.5 Spin polarization in magnetic ZnO
Lars Hartmann1, Qingyu Xu1, Yu-Zi Liu2, Heidemarie Schmidt1, Holger Hochmuth1,
Michael Lorenz1, Ze Zhang3, Marius Grundmann1
1Institut fr Experimentelle Physik II, Universitt Leipzig, Leipzig, Germany
2Beijing Lab. of Electron Microscopy, Chinese Academy of Sciences, Beijing, Chin
a
3Beijing University of Technology, Beijing, China
15.40 Ferro.6 Photoemission Study of ZnMnO alloy
Elzbieta Guziewicz1, Krzysztof Kopalko1, Janusz Sadowski1, 2, and Zbigniew
Golacki1
1Institute of Physics, Polish Academy of Sciences, Warsaw, Poland2Groupe d'Etude
des Semiconducteurs CC074, Universit Montpellier II, France
Thursday, October 5th, 2006 Late Afternoon 16.00

18.00

16.00 Poster II
(coffee, beverages)
18.00 Departure to Braunfels Castle
Banquet
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
5/18

Friday, October 6th, 2006 On Site Registration 8.30

Morning 9.00 10.20

18.00

Session VIII Devices + Processing I

9.00 Dev.Pro.I,1 High-Mobility Transport in the ZnO/MgxZn1-xO Heterostructures
Akira Ohtomo1, Atsushi Tsukazaki1, Junya Nishii1,2,i Hideo Ohno2,3, Masashi
Kawasaki1
1Institute for Materials Research, Tohoku University, Sendai, Japan
2Laboratory for Nanoelectronics and Spintronics, Tohoku University, Sendai, Japa
n
3Japan Science and Technology Agency, Kawaguchi, Japan
9.20 Dev.Pro.I,2 Two-dimensional electron gas and mobility enhancement in Zn pol
ar
ZnMgO/ZnO heterostructures grown by MBE
H. Tampo1, H. Shibata1, K. Matsubara1, A. Yamada1, P. Fons1, M. Yamagata2, H.
Kanie2, and S. Niki1
1National Institute of Advanced Industrial Science and Technology, Ibaraki, Japa
n2 Institute for Physics, Tokyo University of Science, Chiba, Japan
9.40 Dev.Pro.I,3 Role of Subsurface Defects in ZnO Schottky Barrier Formation
L. J. Brillson1, H.L. Mosbacker1, M.J. Hetzer1, Y. Strzhemechny2, D.C. Look3, G.
Cantwell4, J. Zhang4, and J.J. Song4,5
1Ohio State University, Columbus, OH, USA
2Dept. of Physics & Astronomy, Texas Christian University, Fort Worth, TX
3Semiconductor Research Center, Wright State University, Dayton, OH, USA
4ZN Technology, Inc., Brea, CA, USA
5Dept. of Electrical & Computer Eng., University of California, San Diego, CA, U
SA
10.00 Dev.Pro.I,4 ZnO Schottky diode performance as a function of surface polari
ty
M.W. Allen1, 4, P. Miller2, 4, R.J. Reeves2, 4, J.B. Metson3,4, M.M. Alkaisi1, 4
and S.M.
Durbin1, 4
1Dep. of Electric. and Comp. Engin., Univ. Canterbury, Christchurch, New Zealand
2Dep. of Physics and Astron., Univ. Canterbury, Christchurch, New Zealand
3Department of Chemistry, University of Auckland, Auckland, New Zealand
4The MacDiarmid Inst. for Advanced Materials and Nanotechnology, New Zealand
10.20
10.40 Coffee Break
Friday, October 6th, 2006 Late Morning 10.40

12.20

Session IX Devices + Processing II

10.40 Dev.Pro.II,1 Fabrication of ZnO-based LED by MOCVD
Zhizhen Ye , Weizhong Xu, Yujia Zeng,Liping Zhu,Binhui Zhao
State Key Laboratory of Silicon Materials, Zhejiang University, China
11.00 Dev.Pro.II,2 p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes
Y. C. Liu1, H. Y. Xu, C. L. Shao, C. S. Xu and Y. X. Liu
1Center for Advanced Optoelectronic Functional Material Research, Northeast
Normal University, Changchun, China

11.20 Dev.Pro.II,3 Current-transport mechanisms of isotype n-ZnO/n-GaN heterostr

uctures
Ya. I. Alivov1, X. Bo1, Q. Fan1, S. Akarca-Biyikli, O. Lopatiuk2, L. Chernyak2,
C. W.
Litton3, and H. Morko1
1Virginia Commonwealth University, Dep. of Electrical Engin., Richmond, VA, USA
2 Physics Department, University of Central Florida, Orlando, Florida, USA
3 Air Force Res. Lab. -retired (MLPS), Wright-Patterson Air Force Base, Ohio, US
A
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
6/18

11.40 Dev.Pro.II,4 ZnO/Ferroelectric Thin Film Heterostructure Capacitors and Th

in Film
Transistors
E. Cagin, J. Siddiqui, W. Wang, and J. Phillips
EECS Department, The University of Michigan, Ann Arbor, Michigan, USA.
12.00 Dev.Pro.II,5 Preparation and characterization of organic/inorganic structu
res based on
ZnO
R.M.Petoral Jr.1, G. Steinhoff2, G.R. Yazdi1, M. Eickhoff2, A. Lloyd Spetz1, K.
Uvdal1, R.Yakimova1
1 Dep. of Physics, Chemistry and Biology, Linkping University, Linkping, Sweden
2 Walter Schottky Institut, Technical University Munich, Garching, Germany
12.20
13.30 Closing Remarks
Lunch
Departure (Buses leaving for Frankfurt Rhein/Main International Airport)
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
7/18

Poster I Wednesday, October 4th, 2006

P 100 Growth and morphology of ZnO nanorods obtained on nano-organized metallic
clusters
layer
Pascal Andreazza 1, Caroline Andreazza

Vignolle 1, Dongxu Zhao 2

1 Centre de Recherche sur la Matire Divise, CNRS-Universit d'Orlans, France

2 Key Laboratory of Excited State Processes, Chinese Acad.of Sciences, Changchun
, P.R.China
P 101 Effect of Laser annealing on refractive indices of rf sputtered amorphous
SiC thin films
Manoj Arora, S.Koka and Swati Arora
Eritrea Institute of Technology, Mainefhi, Asmara, Eritrea, North-East Africa.
P 102 Carrier and lattice dynamics in ZnO nanorods grown by catalyst-assisted va
por transport
V. Avrutin1, . zgr1, N. Izyumskaya1, S. Chevtchenko1, J. Leach1, C. W. Litton2, H.O
. Everitt3,
K.T. Tsen4, P. Ruterana5, H. Morko1
1Department of Electrical Engineering, Virginia Commonwealth University, Richmon
d, VA, USA
2Air Force Research Lab.-retired (AFRL/MLPS), Wright-Patterson Air Force Base, O
hio, USA
3Army Aviation & Missile RDEC, Redstone Arsenal, AL, USA
4Department of Physics and Astronomy, Arizona State University, Tempe, AZ, USA
5ENSICAEN, CNRS, Caen, F-14050 France
P 103 Effect of a high temperature MgO buffer on the growth of ZnO layers on (00
01) Al2O3
A. El-Shaer1, A. Bakin1, A. Che Mofor1, M. Al-Suleiman, J. Stoimenos2, B. Pcz3, a
nd A. Waag1
1Institute of Semiconductor Technology, University Braunschweig, Germany2Physics
Department, Aristotele University Thessaloniki, Greece
3Research Inst. for Tech. Physics and Mat. Science, Hungarian Academy of Science
s,
Budapest, Hungary
P 104 ZnO Nanopillar-based Heterostructures for device applications
A. Bakin1, A. Che Mofor1, A. Elshaer1, M. Al-Suleiman1, E. Schlenker1, N. Boukos
2, A. Travlos2,
A. Waag1
1Institute of Semiconductor Technology, University Braunschweig, Germany
2Institute of Materials Science, National Center for Scientific Research "Demokr
itos", Greece
P 105 Growth and structural analysis of pulse-laser deposited ZnO epitaxial film
on R-plane
Al2O3 substrate
Yen-Teng Ho *1,2, Chih-Wei Lin1, Li Chang1, Yue-Han Wu1, Hou-Guang Chen1, Mei-Hu
i Liang1,3

1Department of Materials Science and Engineering, National Chiao Tung University

, Hsinchu,
Taiwan 300
2 Chung-Shan Institute of Science and Technology, Longtan, Taoyuan, Taiwan
3Center of General Education, Chung-Hua University, Hsinchu, Taiwan
P 106 Pulsed laser deposition of high crystalline quality Al and Co doped ZnO th
in films on 110
oriented SrTiO3 substrates and field effect experiments
E. Bellingeri , I. Pallecchi, L. Pellegrino, A. Caviglia, G. Canu, A.S. Siri and
D. Marr
INFM-Lamia and Dipartimento di Fisica, Universit di Genova, Genova, Italy
P 107 Preparation of extremely small ZnO nanoparticles confined inside a silica
mesoporous
matrix
Bouvy Claire1, Marine Wladimir2, Sporken Robert3, Su Bao-Lian1
1 Laboratory of Inorganic Materials Chemistry (CMI), The University of Namur (FU
NDP, Belgium)
2 Centre de Rech. sur la Matire Condense et Nanosciences, Universit de Luminy (Fran
ce)
3 Lab. de Physique des Matriaux Electroniques, The University of Namur (FUNDP, Be
lgium)
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
8/18

P 108 Defects in N+ ion-implanted ZnO single crystals studied by positron annihi

lation and Hall
effect
G. Brauer1, W. Anwand1, W. Skopura1, J. Kuriplach2, O. Melikhova2, J. Cizek2, I.
Prochazka2, H.
von Wenckstern3, M. Brandt3, M. Lorenz3 and M. Grundmann3
1Institut fr Ionenstrahlphysik und Materialforschung, FZ Rossendorf, Dresden, Ger
many
2Department of Low Temperature Physics, Charles University, Prague, Czech Republ
ic3Institut fr Experimentelle Physik II,Universitt Leipzig, Germany
P 109 Production of indium-doped zinc oxide nano-semiconductor material by spray
pyrolysis
method
Yasemin Caglar1, Saliha Ilican1, Mujdat Caglar1, Fahrettin Yakuphanoglu2
1 Anadolu University, Faculty of Science, Department of Physics, Eskisehir, TURK
EY
2 Firat University, Faculty of Arts and Sciences, Department of Physics, Elazig,
TURKEY
P 110 Growth and characterization of epitaxial ZnO on yttria-stabilized zirconia
Dong-Jie Ke1,Yen-Cheng Chao1, Chi-Wei Lin1, Yue-Han Wu1, Hou-Guang Chen1, Li
Chang1,Yen-Teng Ho1,2 Mei-Hui Liang1,3
1Dep. of Materials Science and Engineering, National Chiao Tung University, Hsin
chu, Taiwan2Chung-Shan Institute of Science and Technology, Longtan, Taoyuan, Ta
iwan
3Center of General Education, Chung-Hua University, Hsinchu, Taiwan
P 111 Behavior of Li and N impurities in MBE-grown ZnO Films
X. L. Du1, H. T. Yuan1, Z. Q. Zeng1, Z. X. Mei1, X. N. Wang1, H. Li1, Z. F. Li,3
B. Zhang3, J. F.
Jia1, Q. K. Xue1,2, and W. Lu3
1Beijing National Lab. for Condensed Matter Physics, Chinese Academy of Sciences
, China
2Department of Physics, Tsinghua University, Beijing, China
3Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai,
China
P 112 Sputter deposition at high substrate temperatures and characterization of
ZnO and ZnO:P
films
S. Eisermann, J. Sann, S. Graubner, C. Neumann, S. Lautenschlger A. Polity, B.K.
Meyer
I. Physikalisches Institut, Justus-Liebig-Universitt Gieen, Germany
P 113 Carrier Transport in Highly-Doped Oxides: A Comparative Study of Tin-Doped
Indium
Oxide (ITO), Zinc Oxide (ZnO) and Zinc Magnesium Oxide (Zn1-xMgxO:Al)
Klaus Ellmer1, Michael Kanis1 and Rainald Mientus2
1Hahn-Meitner-Institut, Solarenergieforschung, Berlin, Germany

2Opto-Transmitter-Umweltschutz-Technologie e.V, Berlin, Germany

P 114 ZnO nanowires obtained by an innovative vacuum evaporation technique
E. Comini, G. Faglia, M. Ferroni, G. Sberveglieri
SENSOR, CNR-INFM, Brescia University, Italy
P 115 ZnO VCSEL structures with Ta2O5 / SiO2 dielectric DBR mirrors
A. Franke, A. Diez, S. Petzold, B. Diez, T. Hempel, J. Christen, A. Dadgar, A. K
rost
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germa
ny
P 116 Influence of antimony doping on the properties of pulsed laser deposited z
inc oxide thinfilms
F. Friedrich, I. Sieber, N. H. Nickel
Hahn-Meitner-Institut Berlin, Berlin, Germany
P 117 Pseudopotential investigation of the electronic and optical properties of
wurtzite ZnO
Daniel Fritsch, Heidemarie Schmidt, Marius Grundmann
Institut fr Exp. Physik II, Abt. Halbleiterphysik, Universitt Leipzig, Germany
P 118 Sputter deposition of ZnO layers for heterojunctions with diamond
P. Geithner1, D. Salewsky, J. Ristein1, L. Ley1
1Lehrstuhl fr Technische Physik, Universitt Erlangen

Nrnberg, Germany

4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
9/18

P 119 Studies on phase equilibrium in MgxZn1-xO ternary alloyed thin films

R. Ghosh, D. Basak
Dep. of Solid State Physics, Indian Ass. for the Cultivation of Science, Jadavpu
r, Kolkata, India
P 120 Hydrogen induced activation of Mn impurities in ZnO
M. A. Gluba, F. Friedrich, and N. H. Nickel
Hahn-Meitner-Institut Berlin, Abt. Silizium Photovoltaik (SE1), Berlin, Germany
P 121 Fabrication and characterization of p-type and n-type ZnO thin films and d
evices
Hao Gong1, Guangxia Hu1, Jonny Goh1, Jianhui Wang1, Ping Wu2, Zhigeng Yu1,2
1Dep. of Mat. Science and Engineering, National University of Singapore, Kent Ri
dge, Singapore
2Institute of High Performance Computing, Singapore Science Park II. Singapore
P 122 Influence of high temperature annealing on morphology and electrical prope
rties of ZnO
substrates
Christian Neumann, Swen Graubner, Bruno K. Meyer
I. Physikalisches Institut, Justus-Liebig-Universitt Gieen, Germany
P 123 Synthesis and characterisation of Co doped ZnO
Christoph Knies1, Niklas Volbers1, Sven Graubner1, Jan Stehr1, Detlev M. Hofmann
1, Huijuan
Zhou2, Andreas Ney3, and Tom Kammermeyer3
1I. Physics Institute, University of Giessen, Heinrich-Buff-Ring 16, 35392 Giess
en, Germany
2Institute of Applied Physics, University of Karlsruhe, Germany
3University of Essen-Duisburg, Fachbereich Physik, Duisburg, Germany
P 124 Low Temperature Chemical Growth of ZnO Nanowires on Substrates including g
lass and
plastics
Q-H Hu1,2, V. Kouzmine1, J. Persson1, J. Levin1, M. Willander1, L. Ilver1
1I. Department of Physics, Gteborgs Universitet, Gteborg, Sweden
2Lightlab Sweden AB, Smedjegatan 6, Nacka, Sweden
P 125 Ultraviolet and White LEDs from ZnO Nanowires Grown at 90 C on p-SiC
Q-H Hu1,2, V. Kouzmine1, J. Persson1, J. Levin1, M. Willander1, L. Ilver1, and Q
. Ul-Wahab3
1I. Department of Physics, Gteborgs Universitet, Sweden
2Lightlab Sweden AB, Nacka, Sweden
3Department of Physics, Linkping University, Sweden
P 126 X-ray studies and optical characterization of non-doped and fluorine-doped

ZnO thin films

Saliha Ilican1,Yasemin Caglar1, Mujdat Caglar1, Fahrettin Yakuphanoglu2
1Anadolu University, Faculty of Science, Department of Physics, Eskisehir, TURKE
Y
2Firat University, Faculty of Arts and Sciences, Department of Physics, Elazig,
TURKEY
P 127 Optical and Electrical Properties of Melt-Grown ZnO Single Crystals
K. Irmscher, M. Roberg, T. Schulz, D. Schulz, D. Klimm, R. Fornari
Institut fr Kristallzchtung, Berlin, Germany
P 128 Magnetic properties of ZnO thin films doped by Co and Mn
V. Karpyna1, V.Khranovskyy, V.Lazorenko, G.Lashkarev, T.Story2, V.Baturin3, A.Ka
rpenko
1Institut for Problems of Material Science NASU, Kyiv, Ukraine
2Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
3Institute of Applied Physics, NASU, Sumy, Ukraine
P 129 Fine channel mist chemical vapor deposition (FCM-CVD) as a novel technolog
y for growth
of ZnO thin films
Tosiyuki Kawaharamura1, Hiroyuki Nisinaka1, Yudai Kamada1, Shizuo Fujita2
1 Department of Electronic Engineering and Science, Kyoto University, Japan
2 International Innovation Center, Kyoto University, Kyoto, Japan
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
10/18

P 130 Nanostructures for Ozone sensing:

Growth of ZnO on glass by Aqueous Chemical Growth
G. Kenanakis1,2, D. Vernardou1,4, E. Koudoumas1, N. Katsarakis1,3
1Center of Materials Technology and Laser, Technological Educational Institute o
f Crete,
Heraklion, Crete, Greece
2Chemistry Department, University of Crete, 711 10 Heraklion, Crete, Greece
3Institute of Electronic Structure and Laser, Heraklion, Crete, Greece
4Department of Materials Science and Technology, University of Crete, Heraklion,
Crete, Greece
P 131 Effective UV photoluminescence from ZnO film
deposited on Si (110) substrates with SiNx buffer layer
V. D. Khranovskyy1, G. V. Lashkarev1, V. A. Karpyna1, V. I. Lazorenko1,
I. V. Blonsky2, I. N. Dmytruk2, P. I. Korenyuk2, R. Yakimova3, A. G. Ulyashin4,
B.-G. Svensson3
1Inst. for Problems of Material Science, National Academy of Sciences of Ukraine
, Kyiv, Ukraine
2Institute of Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
3Linkoping University, Department of Physics and Measurement Technology, Linkopi
ng, Sweden
4University of Oslo, Physics Dep & Centre for Materials Science and Nanotech., O
slo, Norway
P 132 A study of the formation of p-type ZnO films with annealing in NH3 ambient
E. S. Jung1, H. S. Kim,1, J. H. Chung1, and Hyung Kun Cho2
1 Department of Applied Physics, Korea Maritime University, Busan, Korea
2 Material Science & Engineering, Sunkyunkwan University, Suwon, Korea
P 133 Laser Interference Lithography Tailored for Highly Symmetric Arranged ZnO
Nanowire
Arrays
Dong Sik Kim 1, Ran Ji1, Hong Jin Fan1, Frank Bertram2, Roland Scholz1, Korneliu
s Nielsch1,
Jrgen Christen2, and Margit Zacharias1,3
1 Max Planck Institute of Microstructure Physics, Halle, Germany
2 Institute of Experimental Physics, Otto-von-Guericke-University, Magdeburg, Ge
rmany
3 FZ Rossendorf, Dresden Germany
P 134 Structural, optical and electrical characteristics of different ZnO bulk a
nd nano-structures
P.Klason1, Q. X. Zhao1, O. Nur1, and M. Willander1
1Department of Physics, Gteborg University,
412 96 Gteborg, Sweden
P 135 Effects of an Ag overlayer on optical and electrical properties of ZnO:Al
transparent
conducting thin films

M. von Kreutzbruck1, G. Lembke1, Th. Krmer2, B.K. Meyer2

1Institut fr Angewandte Physik, Justus-Liebig-Universitt Giessen, Germany
2I. Physikalisches Institut, Justus-Liebig-Universitt Gieen, Germany
P 136 Electrical properties of defect states in local p- and n-type conductivity
domains in
ZnO:N,As layers
A.Krtschil, A.Dadgar, A.Diez, A. Krost
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germa
ny
P 137 Effects of High-Temperature-Annealed self-Buffer layer (HITAB) insertion o
n the
photoluminescence properties of Mg0.15Zn0.85O alloy films grown by laser-assiste
d
molecular-beam epitaxy
M. Kubota1, A. Tsukazaki2, T. Onuma1,3, A. Ohtomo2, T. Sota4, M. Kawasaki2,5, an
d S. F.
Chichibu1,3
1Inst. of Applied Physics & 21st century COE office, Graduate School of Pure and
Applied
Sciences, Univ. of Tsukuba, Japan
2Inst. for Materials Research, Tohoku Univ., Sendai, Japan
3NICP, ERATO, Japan Science and Technology Agency, Kawaguchi, Japan
4Dept. of Electrical Eng. and Bioscience, Waseda Univ., Shinjuku, Japan
5Nanomaterials Laboratory, National Inst. for Materials Science, Tsukuba, Japan
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
11/18

P 138 Engineering of radiation defects and Li by flash anneals in

ion-implanted ZnO
Thomas Moe Brseth,1Jens S. Christensen,1 Edouard Monakhov, 1 Bengt G. Svensson, 1
Andrej
Kuznetsov1 , Filip Tuomisto 2 , Wolfgang Skorupa3
1Physics Dep./Centre for Materials Science and Nanotechnology, University of Osl
o, Norway
2Laboratory of Physics, Helsinki University of Technology, Finland
3Institute of Ion Beam Physics and Materials Research, FZ Rossendorf, Dresden, G
ermany
P 139 Optical Orientation Measurements Of Excitons in ZnO
D. Lagarde*1, L. Lombez1, A. Balocchi1, P. Renucci1, H. Carrere1, T. Amand1, X.
Marie1, Z.X.
Mei2, X.L. Du2, and Q.K. Xue2
1Laboratoire de Nanophysique, Magntisme et Optolectronique, INSA, 135 av. de Rangu
eil,
31077 Toulouse Cedex 4, France
2Institute of Physics, The Chinese Academy of Sciences and National Center for N
ano-Science
and Texchnology, Beijing 1000080, China
P 140 Structural characterization of a a-ZnMgO / ZnCoO / r-sapphire sample
M.Lagt1, Jean-Michel Chauveau1,2, Christian Morhain1, Christiane Deparis1
1I. CNRS-CRHEA, Valbonne, France
2Universit de Nice-Sophia Antipolis, Parc Valrose, Nice, France
P 141 Chemical Vapor Deposition Growth of ZnMgO
Stefan Lautenschlger, Joachim Sann, Niklas Volbers, Bruno K. Meyer
I. Physikalisches Institut, Justus-Liebig-Universitt Gieen, Germany
P 142 Molecular beam epitaxy growth of ZnO
comparison of oxygen species
W.C.T. Lee1,3, C.E. Kendrick1,3, C. H. Swartz1,3, P. Miller2,3, R.J. Reeves2,3,
S.M. Durbin1,3
1Department of Electrical and Computer Engineering, University of Canterbury, Ne
w Zealand.
2Department of Physics, University of Canterbury, New Zealand.
3The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand

P 143 Electrical Characterisation of Hydrogen Plasma Treated n-type ZnO Layers

N.N. Somhlahlo, K.T. Roro, C. Weichsel, A.W.R. Leitch
Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth, 6031
, South Africa
P 144 Gas-sensitive visible and excitonic light emission of ZnO nanowires
S. Lettieri 11, A. Setaro1, A. Bismuto1, P. Maddalena1 G. Faglia2, E. Comini2, C
. Baratto2, G.

Sberveglieri2
1CNR-INFM Coherentia & Dipartimento di Scienze Fisiche, Napoli, Italy
2CNR-INFM Sensor Lab & Universit di Brescia, Brescia, Italy
P 145 The preparation and unstable properties of p-type ZnO:N irradiated by diff
erent light
Y. C. Liu1, Z. Y. Xiao2, J. Y. Zhang2, C. S. Xu1, Y. X. Liu1 and C. L. Shao1
1Center for Advanced Optoelectronic Functional Material Research, Northeast Norm
al
University, Changchun, P. R. China
2Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Me
chanics and
Physics, Chinese Academy of Sciences, Changchun, P. R. China
P 146 Modification of ZnO layers by molecular adsorbates
during electrochemical deposition
T. Loewenstein1, C. Neumann2, T. Krmer2, B. K. Meyer2, T. Yoshida3, D. Schlettwei
n1
1Institut fr Angewandte Physik, Justus-Liebig-Universitt Gieen, Germany
2I. Physikalisches Institut, Justus-Liebig-Universitt Gieen, Germany
3Graduate School of Engineering, Gifu University, Japan
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
12/18

P 147 Advances in high-quality ZnO Thin Films and Heterostructures grown by Puls
ed Laser
Deposition
Michael Lorenz1, Holger Hochmuth1, Robert Johne1, Gabriele Benndorf1, Jrg Lenzner
1, Holger
von Wenckstern1, Matthias Schubert1, 2, Marius Grundmann1
1Institut fr Experimentelle Physik II, Universitt Leipzig, Germany
2now at CMRA, University of Nebraska-Lincoln, Lincoln, NE, U.S.A.
P 148 ZnO based multimode voltage tunable SAW devices
Jun Zhu, Ying Chen, Gaurav Saraf, Nuri W. Emanetoglu, Yicheng. Lu
Department of Electrical and Computer Engineering, Rutgers University, NJ, USA
P 149 Zn1-xMgxO polycrystalline films deposited by co-sputtering
K. Matsubara, H. Tampo, S. Shibata, A. Yamada, and S. Niki
National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan
P 150 Tri-buffer Approach to Obtain High-quality ZnO Epitaxial Films on Sapphire
Z. X. Mei1, X. L. Du1, Z. Q. Zeng1, H. T. Yuan1, Y. Wang1, J. F. Jia1, Q. K. Xue
1,2, Z. Zhang3
1Beijing National Laboratory for Condensed Mattter Physics, Institute of Physics
, Chinese
Academy of Sciences, Beijing, China
2Department of Physics, Tsinghua University, Beijing, China
3Beijing University of Technology, Beijing, China
P 151 Investigation of the Stability of ZnO:Al2O3 Thin Films Deposited by Reacti
ve MidFrequency Magnetron Sputtering in CIGS Solar Modules
Richard Menner1, M. Powalla1, V. Sittinger2, F. Ruske2, B. Dimmler3
1Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung (ZSW), Stuttgart, Germany
2 Fraunhofer IST, Braunschweig, Germany
3 Wuerth Solar GmbH & Co. KG, Marbach/N., Germany
P 152 Effect of substrate and annealing temperature on the optical and physical
properties of
DC sputtered ZnO films
Paul Miller1,3, L.P. Schuler2, M.M. Alkaisi2 , R.J. Reeves1,3
1Department of Physicas and Astronomy, University of Canterbury, Christchurch, N
ew Zealand
2Dep. of Electrical and Computer Engineering, Univ. of Canterbury, Christchurch,
New Zealand
3The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand

P 153 VPT Growth of ZnO: From Nanostructures to Layers

A. Che Mofor1, A. Bakin1, A. El-Shaer1, M. Al-Suleiman1, N. Boukos2, A. Travlos2
, and A. Waag1
1Institute of Semiconductor Technology, University Braunschweig, Germany
2Inst. of Materials Science, National Center for Scientific Research, "Demokrito
s", Attikis, Greece
P 154 Mechanisms of visible light emission in ZnO:Sm nanostructures
T. Monteiro1, T. Trindade2, M. Peres1, A. S. Pereira2, A. Neves1, M. J. Soares1,
A. Cruz1
1Departamento de Fsica, FSCOSD, Universidade de Aveiro, Portugal
2Departamento de Qumica, CICECO, Universidade de Aveiro, Portugal
P 155 Remote Plasma Processing and Schottky Barrier Formation at ZnO(0001) Surfa
ces
H.L. Mosbacker1, S. El Hage1, L. J. Brillson1, and D.C. Look2
1The Ohio State University, 205 Dreese Lab, Columbus, OH, USA
2Semiconductor Research Center, Wright State University, Dayton, OH, USA
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
13/18

Poster II Thursday, October 5th, 2006

P 200 ZnO Thin Films Grown via PLD for the Photocatalytic Inactivation of Pathog
enic
Biomaterial
J.-P. Mosnier1, R. O Haire1, M.A.G. Boyle2, K.G. McGuigan2, E. McGlynn1, M. Henry1
1National Centre for Plasma Science & Technology, School of Physical Sciences, D
ublin City
University, Ireland
2Royal College of Surgeons in Ireland, Dublin, Ireland
P 201 Unambiguous identification of the PL-I9-line in zinc oxide
S. Mller1, D. Stichtenoth1, M. Uhrmacher1, H. Hofsss1, J. Rder2, C. Ronning1
1II. Physikalisches Institut, Georg-August Universitt Gttingen, Germany
2Institut fr Physikalische und theoretische Chemie, TU Braunschweig, Germany
P 202 Correlation between Metal-Insulator Transition and High Temperature Ferrom
agnetic
Ordering in Co doped ZnO Nanoparticles
M. Naeem and S. K. Hasanain
Magnetism & Superconductivity Group, Department of Physics, Quaid-i-Azam Univers
ity,
Islamabad, Pakistan
P 203 ZnO Crystal Morphology
Nemeth, B.1, Nause, J.1
1Cermet, Inc, Atlanta, Ga, USA
P 204 Direct observation of the ionization and neutralization of hydrogen shallo
w donors in zinc
oxide
N. H. Nickel
Hahn-Meitner-Institut Berlin, Germany
P 205 Microscopic Analysis of Luminescence in thick MgZnO Layers
M. Noltemeyer1, F. Bertram1, A. Franke1, S. Petzold1, Th. Hempel1,J. Christen1,
S.
Lautenschlger2 and B. K. Meyer2
1Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germ
any
2I. Physikalisches Institut, University Giessen, Germany
P 206 ZnO thin films growth by Pulsed Plasma Deposition
Petr Nozar1, Riccardo Lotti2, Luca Milana2, Carlo Taliani1,2
1Institute for Nanostructured Material Studies, Bologna, Italy
2Organic Spintronics, Srl, Bologna, Italy
P 207 Sol-gel derived ZnO on anodized aluminum oxide nanohole templates

K. Ogata1,2, S. Shingubara1, H. Yorozu3 and T. Nakanishi3

1Kansai University, Suita, Japan
2Osaka Technology Licensing Organization(TLO), Osaka, Japan
3Shinchuo-kogyo, Hachihommatsu-cho, Higashi, Hiroshima, Japan
P 208 Highly transparent and conductive Ga-doped ZnO thin films grown by oxygen
radicalassisted pulsed-laser deposition
Min-Suk Oh, Dae-Kue Hwang, Jae-Hong Lim, Young-Seok Choi and Seong-Ju Park
Department of Materials Science and Engineering & National Research Laboratory f
or
Nanophotonic Semiconductors, Gwangju Institute of Science and Technology, Gwangj
u, Korea
P 209 Growth and Characterizations of N-doped ZnO
on Semi-insulating GaN Template
Ming Pan1, Jeff Nause1, Varatharajan Rengarajan1,
Eun Hyun Park2, Ian Ferguson2
1 Cermet, Inc., 1019 Collier Road, Atlanta, GA, USA
2 School of ECE, Georgia Institute of Technology, Atlanta, GA, USA
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
14/18

P 210 Epitaxial Growth of m-Plane (1010) Wurtzite ZnO on Cubic (001) MgO Substra
tes
E. Cagin, W. Wang, J. Yang, and J. Phillips
EECS Department, The University of Michigan, Ann Arbor, Michigan, USA
P 211 Growth evolution of PLD Zn(Mg)O nanowire arrays and electrical characteriz
ation of ZnO
microcrystals
Andreas Rahm1, Holger von Wenckstern1, Thomas Nobis1, Michael Lorenz1, Gregor
Zimmermann1, and Marius Grundmann1
1Institut fr Experimentelle Physik II, Universitt Leipzig, Germany
P 212 Catalytic growth of ZnO nanostructures
Anton Reiser1, A. Ladenburger1, G. M. Prinz1, M. Schirra1, M. Feneberg1,
E. Mller2, D. Gerthsen2, K. Thonke1, and R. Sauer1
1Universitt Ulm, Abteilung Halbleiterphysik, Ulm, Germany
2Universitt Karlsruhe, Laboratorium fr Elektronenmikroskopie, Karlsruhe, Germany
P 213 ZnO Photonic Crystal Type Structures Fabricated by Focused Ion Beam Proces
sing of
ZnO Films Grown on c-Sapphire by Pulsed Laser Deposition
D. Rogers1,2, F. Teherani1, G. Lerondel2, C. Hubert2, S. Otari1,2, C. Collet3, W
. Nativel3, G.
Garry3, A. Lusson4, V. Sallet4, G. Amiri4, M. Peres5, A.J. Neves5 & T. Monteiro5
1Nanovation SARL, Orsay, France,
2Universit de Technologie de Troyes, Troyes, France,
3Thales Research & Technology, Palaiseau, France,
4GEMAC, CNRS Meudon, Universit de Versailles, France,
5Departamento de Fisica, FSCOSD, Universidade de Aveiro, Portugal
P 214 Optical characterization of nitrogen implanted ZnO thin films and nanowire
s
D. Stichtenoth1, S. Mller1, W. Dewald1, S. Geburt1, C. Ronning1, L. Wischmeier2,
C. Bekeny2, T.
Voss2
1II. Institute of Physics, University of Gttingen, Germany
2Institute for Solid State Physics, University of Bremen, Germany
P 215 The growth of ZnO by MOCVD using helium as carrier gas
V. Sallet, M. Chaqour, E. Chikoidze, G. Amiri, A. Lusson, G. Zribi, P. Galtier
CNRS, Groupe d tude de la matire condense (GEMaC), Meudon, France
P 216 Growth and characterization of homoepitaxially grown ZnO thinfilms
Sann, J., Neumann, C., Lautenschlger, S, Volbers, N., and Meyer, B. K.
I. Physikalisches Institut, Justus-Liebig-Universitt Gieen, Germany
P 217 EPR and magnetic properties of ZnO:Co thin films grown by MBE

P. Sati 1, C. Morhain2, S. Rgnier1 and A. Stepanov1

1Laboratoire Matriaux et Microlectronique de Provence, Marseille, France
2 CRHEA-CNRS, Valbonne Sophia-Antipolis, France
P 218 Optical Characterization of ZnO based Nanostructures and Films by
Cathodoluminescence with High Lateral and Spectral Resolution
Martin Schirra1, Anton Reiser1, Raoul Schneider1, Gnther M. Prinz1, Martin Fenebe
rg1, Tobias
Rder1, Klaus Thonke1, and Rolf Sauer1
1Abteilung Halbleiterphysik, Universitt Ulm, Germany
P 219 Photoelectrochemical Characterization of Electrodeposited Dye / ZnO Films
with
Optimized Crystalline Orientation of Porous ZnO
K. Nonomura,1 D. Komatsu,4 T. Loewenstein,1 J. Rathousky,2 T. Oekermann,3
T. Yoshida,4 H. Minoura,4 and D. Schlettwein1
1Institute for Applied Physics, University of Giessen, Germany
2J. Heyrovsky Institute of Physical Chemistry, Prague, Czech Republic
3Institute of Physical Chemistry and Electrochemistry, University of Hannover, G
ermany
4Environmental and Renewable Energy Systems Division, Gifu University, Japan
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
15/18

P 220 Modeling of the optical properties of ZnO structures

C. Schlichenmaier, A. Thrnhardt, M. Kira, S. W. Koch
Fachbereich Physik, Philipps-Universitt Marburg, Germany
P 221 Charge carrier profiling of ZnO
Matthias Brandt, Heidemarie Schmidt, Holger von Wenckstern, Christoph Henkel, Ho
lger
Hochmuth, Michael Lorenz, Marius Grundmann
Institut fr Experimentelle Physik II, Universitt Leipzig, Germany
P 222 Temperature-dependent band-gap and excitonic properties of ZnO
R. Schmidt-Grund1, N. Ashkenov1, M. Schubert2, W. Czakai1, D. Faltermeier3, G. B
enndorf1, H.
Hochmuth1, M. Lorenz1, J. Blsig4, and M. Grundmann1
1Institut fr Experimentelle Physik II, Universitt Leipzig, Germany
2Department of Electrical Engineering, University of Nebraska-Lincoln, USA
31. Physikalisches Institut, Universitt Stuttgart, Stuttgart, Germany
4FNW/IEP/AHE, Otto-von-Guericke Universitt Magdeburg, Germany
P 223 ZnO Thin Films Grown by Chemical Spray Pyrolysis
R. Ayouchi1, L. Bentes1, P. Queiroz1, C. Santos1, R. Schwarz1, M. Niehus2
1Departamento de Fsica, Instituto Superior Tcnico, Lisboa, Portugal
2Depart.de Electrnica e Informtica, Instituto Superior de Engenharia de Lisboa, Po
rtugal
P 224 Evolution of lattice strain in ZnO grown on MgO, and MgO grown on c-sapphi
re
S. H. Park 1, T. Minegishi 1, J. S. Park 1, I. H. Im 1, Y.F. Chen 1+, T. Hanada
1, M. W. Cho 1, 2, and
T. Yao 1, 2
1 Institute for Materials Research, Tohoku University, Sendai, JAPAN
2 Center for Interdisciplinary Research, Tohoku University, Sendai, 980-8577, JA
PAN
P 225 Nonlinearities in undoped ZnO and doped ZnO thin films by Cerium, Fluorine
, Erbium,
Aluminum and Tin
Z. Sofiani1,2, M. A. Lamrani1, L. Dghoughi1, B. Derkowska3, W. Bala3, M. Addou1
and B.
Sahraoui2
1LOPCM, Ibn Tofail University, Kenitra, Morocco
2POMA laboratory, University of Angers, France
3Institut of Physics, Nicolas Copernicus University, Torun, Poland
P 226 Luminescence properties of ultra fine ZnO nanowires
D. Stichtenoth1, C. Ronning1, P.-C. Chang2, J.G. Lu2
1II. Institute of Physics, University of Gttingen, Germany
2Depart. of Chemical Engineering and Computer Science, Univ. of California, Irvi
ne, CA, USA

P 227 ZnO in the textured back reflector of silicon thin film solar cells
R.H.J. Franken1, R.L. Stolk1, Y. Liu1, J.K. Rath1, R.E.I. Schropp1
1Utrecht University, Faculty of Science, SID-Physics of Devices, Utrecht, The Ne
therlands
P 228 Anisotropy of the band-gap of ZnO thin films
Ch. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinlnder, H. Hochmuth, M. Lorenz,
and M.
Grundmann
Institut fr Experimentelle Physik II, Universitt Leipzig, Germany
P 229 Thickness influence on the structural properties of ZnO thin films
M. Suchea 1,2b, S. Christoulakis 1,2a, P. Horvath1, G. Kiriakidis1,2a
1 Institute of Electronic Structure and Laser, Foundation for Research & Technol
ogy-Hellas,
Heraklion, Crete, Greece
2 University of Crete, a Physics and b Chemistry Department, Heraklion, Crete, G
reece
P 230 Growth of smooth ZnO layers by a modified low cost CVD process
Anton Reise1, A. Ladenburger, G. M. Prinz, M. Schirra, M. Feneberg, K. Thonke, a
nd R. Sauer
Abt. Halbleiterphysik, Universitt Ulm, Germany
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
16/18

P 231 38 x 50mm transparent and conducting ZnO film MOCVD production tool
S. Sun1, D. Mentel1, L.G. Provost1, D. Sugrim1, G.S. Tompa1, P. Chan2, K. Tong2,
R. Wong2, A.
Lee2
1Structured Materials Industries, Inc., Piscataway, NJ, USA
2Podium Photonics, Ltd., Hanoi Road, Tsimshatsui, Kowloon, Hong Kong
P 232 MOCVD production of ZnO films doped with As, N, P and Sb
S. Sun1, C.E. Rice1, L.G. Provost1, G.S. Tompa1
1Structured Materials Industries, Inc., Piscataway, NJ, USA
P 233 Magnetic properties of ZnO-based dilute magnetic semiconductors from SIC-L
SDA
calculations
M. Toyoda1, H. Akai 2, K. Sato 1 and H. Katayama-Yoshida 1
Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka
, Ibaraki, Japan.
2Department of Physics, Osaka University, 1-1 Machikaneyama, Toyonaka, Japan
P 234 Comparison of vacancy defect distributions in bulk ZnO crystals grown by v
arious
methods
Filip Tuomisto1, J.-M. Mki1, David C. Look2, Andrzej Mycielski3, Krzsysztof Grasz
a3
1Laboratory of Physics, Espoo, Finland
2Semiconductor Research Center, Wright State University, Dayton, Ohio, USA
3Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
P 235 Magneto-optical studies of bound exciton complexes in ZnO
M. R. Wagner1, U. Haboeck1, R. McKenna1, A. Hoffmann1
S. Lautenschlger2, J. Sann2, B. K. Meyer2, A. Rodina3
1Institut fr Festkrperphysik, Technische Universitt Berlin, Germany
2I. Physikalisches Institut, Justus-Liebig-Universitt Gieen, Germany
3Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia
P 236 On the role of contact resistances in two-terminal measurements of individ
ual ZnO
nanowires
D. Weissenberger1, F. Prez-Willard1, D. Gerthsen1
1Laboratorium fr Elektronenmikroskopie, Universitt Karlsruhe, Germany
P 237 Comprehensive study of donors states in ZnO thin films
H. von Wenckstern, M. Brandt, H. Schmidt, H. Hochmuth, M. Lorenz and M. Grundman
n
Institut fr Experimentelle Physik II, Leipzig, Germany
P 238 Photoluminescence dynamics of surface-related emission in ZnO nanorods
L. Wischmeier1, T. Voss1, I. Rckmann1, J. Gutowski1, A. C. Mofor2, A. Bakin2, A.

Waag2
1Institut fr Festkrperphysik, Universitt Bremen, Germany
2Institute of Semiconductor Technology, Technical University of Brauschweig, Ger
many
P 239 Electrical Characterization of Undoped ZnO-Layers Grown by MOCVD
S.Tiefenau, H.Witte, A.Krtschil, S.Giemsch, A.Dadgar, A.Krost, J. Christen
Institute of Experimental Physics, Otto-von-Guericke-University-Magdeburg, Germa
ny
P 240 Realization of p-type ZnO guided by first principles simulation
Ping Wu1, Zhi Gen Yu1, Hao Gong2
1Institute of High Performance Computing, The Capricorn Singapore Science Park I
I., Singapore
2Department of Materials Science and Engineering, National University of Singapo
re, Singapore
P 241 Growth and Characteristics of p-ZnO/n-GaN Heterostructure Light-Emitting D
iodes
C. C. Wu1, W. K. Wang1, S. H. Lin1, R. H. Horng2, D. S. Wuu1
1Department of Materials Engineering, National Chung Hsing University
2Institute of Precision Engineering, National Chung Hsing University, Taiwan, R.
O.C
P 242 Pulsed laser deposition and in-site annealing of zinc oxide
L. Zhao, Z. Liu, C. S. Xu, Y. X. Liu, Y. C. Liu
Center for Advanced Optoelectronic Functional Material Research, Northeast Norma
l University,
Changchun, China
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
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P 243 Magneto-photoluminescence and photoreflectance study of the exciton fine s

tructures in
ZnO epilayers by MOCVD
L. Ding1, C. L. Yang 1,2, Z. K. Tang1, H. T. He1, J. N. Wang1, W. K. Ge1
1Department of Physics, Hong Kong University of Science and Technology, Hong Kon
g, China
2School of Physics and Engineering, Sun Yat-sen University, Guang Zhou, China
P 244 Ultrafast Exciton and Biexciton Dynamics in a ZnO Thin Film
Hsiang-Chen Wang1, Yen-Cheng Lu1, Cheng-Yen Chen1, Fang-Yi Jen1, C. C. Yang1, Ba
o-Ping
Zhang2, and Yusaburo Segawa2
1Grad. Inst. of Electro-Optical Engineering, National Taiwan University, Taipei,
Taiwan, R.O.C.
2Photodynamics Research Center, RIKEN, Sendai, Japan
P 245 Structure Determination of Strained MgO Ultra-thin Films Used as Buffer La
yers for ZnO
Epitaxy
H. T. Yuan1, X. L. Du 1, Y. Z. Liu2, Z. Q. Zeng1, Z. X. Mei1, J. F. Jia1, Q. K.
Xue1,2, and Z. Zhang3
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese
Academy of Sciences, Beijing, China
2Department of Physics, Tsinghua University, Beijing, China
3Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academ
y of Sciences,
Beijing, China
P 246 Phenomena study of ethanol adsorption on ZnO surface
A. Habib Zahmani, M. Zerdali, S. Hamzaoui
Laboratoire de Microscopie Electronique et des Sciences des Matriaux, Universit de
s
Sciences et de Technologie d'Oran, El M'Naouer, 31100, ORAN, Algerie
P 247 Surface Modification of MgAl2O4(111) for Growth of High-Quality ZnO Epitax
ial Film with
Atomically Smooth Surface
Z. Q. Zeng1, X. L. Du1, Y. Z. Liu1, H. T. Yuan1, Z. X. Mei1, J. F. Jia1, Q. K. X
ue1,2, and Z. Zhang3
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
The Chinese
Academy of Sciences, Beijing, China
2Department of Physics, Tsinghua University, Beijing, China
3Beijing University of Technology, Beijing, China
P 248 Observation of GHz Longitudinal Guided Mode Surface Acoustic Waves in ZnO
Thin Films
Grown on SiO2/ Si Substrates by Pulsed Laser Deposition
M.Zerdali1, S.Hamzaoui1, D. Rogers2,3, F.H.Teherani3, P.Djemia4 & Y.Roussigne4

1Laboratoire de Microscopie Electronique et des Sciences des Matriaux, Universit d

es
Sciences et de Technologie d Oran, El M Naouer, ORAN, Algeria.
2Nanovation SARL, Orsay, France.
3Universit de Technologie de Troyes, 12 rue Marie Curie, 10000, Troyes, France,
4Laboratoire des proprits Mcaniques et Thermodynamiques des Matriaux, Universit Paris
Nord, Villetaneuse, France
P 249 Native defects in ZnO single crystal grown by closed seeded CVT method
Youwen Zhao, Zhiyuan Dong, Xuecheng Wei, and Jinmin Li
Institute of Semiconductors, Chinese Academy of Science, Beijing, P. R. China
P 250 Microstructure of Co in ZnO:Co thin films
Huijuan Zhou1, Vivek Malik1,2, Christoph Knies3, Niklas Volbers3, Detlev M. Hofm
ann3, , S.
Chaudhary2, Limei Chen4, Peter J. Klar4, Wolfram Heimbrodt4, Heinz Kalt1
1Institute of Applied Physics, University of Karlsruhe, Germany
2Indian Institute of Technology, Delhi, India
3I. Physics Institute, University of Giessen, Germany
4Material Research Center and Dep. of Semiconductor Physics, University Marburg,
Germany
4th International Workshop on ZnO and Related Materials, Oct 3-6, 2006, Universi
ty of Giessen, Germany
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