2SB955(K)

Silicon PNP Triple Diffused

Application
Power switching complementary pair with 2SD1126(K)

Outline
TO-220AB

2 3

1. Base
2. Collector
(Flange)
3. Emitter

ID
1.0 k
(Typ)

200
(Typ)
3

2SB955(K)
Absolute Maximum Ratings (Ta = 25C)
Item

Symbol

Rating

Unit

Collector to base voltage

VCBO

120

Collector to emitter voltage

VCEO

120

Emitter to base voltage

VEBO

Collector current

IC

10

Collector peak current

I C(peak)

15

10

50

C to E diode forward current

ID*

1
2

Collector power dissipation

PC *

Junction temperature

Tj

150

Storage temperature

Tstg

55 to +150

Notes: 1. Value at TC = 25C

2. PW 1 ms 1 shot

Electrical Characteristics (Ta = 25C)

Item

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown V(BR)CEO

voltage

120

I C = 25 mA, RBE =

Emitter to base breakdown

voltage

V(BR)EBO

I E = 200 mA, IC = 0

Collector cutoff current

I CBO

100

VCB = 120 V, IE = 0

I CEO

10

VCE = 100 V, RBE =

DC current transfer ratio

hFE

1000

20000

Collector to emitter saturation

VCE(sat)1

1.5

I C = 5 A, IB = 10 mA*1

voltage

VCE(sat)2

3.0

I C = 10 A, IB = 0.1 A*1

Base to emitter saturation

VBE(sat)1

2.0

I C = 5 A, IB = 10 mA*1

voltage

VBE(sat)2

3.5

I C = 10 A, IB = 0.1 A*1

C to E diode forward voltage

VD

3.0

I D = 10 A*1

Turn on time

t on

0.8

VCC = 30 V

Turn off time

t off

4.0

I C = 5 A, IB1 = IB2 = 10 mA

Note:

Symbol

1. Pulse test

VCE = 3 V, IC = 5 A*1

2SB955(K)
Maximum Collector Dissipation
Curve
Area of Safe Operation
30

Collector current IC (A)

0.3
Ta = 25C
0.1

50
100
Case temperature TC (C)

0.03
3

150

2.0

30000
5
1.

1.0
0.9
0.8
0.7

50

0.6

0.5
4

0.4 mA
2
IB = 0
0

6
8
10
2
4
Collector to emitter voltage VCE (V)

DC current transfer ratio hFE

Collector current IC (A)

TC = 25C

10
30
100
300
Collector to emitter voltage VCE (V)

DC Current Transfer Ratio vs.

Collector Current

Typical Output Characteristics

10

ot
)
sh
C
ot
25
s1
=
sh
m
1
1
s
=
(T C
m
ion
at
er
Op

1.0

10

10

20

IC(max)

DC

30

PW

40

iC(peak)

10
PW

Collector power dissipation PC (W)

50

VCE = 3 V
Pulse

10000

=
Ta
3000

C
75
25
5
2

1000
300
100
30
0.3

1.0
3
10
Collector current IC (A)

30

Saturation Voltage vs. Collector Current

Switching Time vs. Collector Current

10
3

10
3

VBE(sat)

1.0

500
VCE(sat)

0.3

Switching time t (s)

Collector to emitter saturation voltage VCE(sat) (V)

Base to emitter saturation voltage VBE(sat) (V)

2SB955(K)

200
IC/IB = 100

0.1
Ta = 25C
Pulse

0.03
0.01
0.3

1.0
3
10
Collector current IC (A)

tstg
ton

1.0

tf

0.3
0.1

VCC = 30 V
IC = 500 IB1 = 500 IB2
Ta = 25C

0.03

30

0.01
0.3

1.0
3
10
Collector current IC (A)

Diode Current vs. Forward Voltage

10

Diode current ID (A)

TC = 25C

1
2
3
4
Diode forward voltage VF (V)

30

Unit: mm

11.5 MAX
2.79 0.2

10.16 0.2
9.5

3.6 -0.08
+0.1

1.26 0.15

15.0 0.3

6.4

18.5 0.5

1.27

+0.2
0.1

8.0

4.44 0.2

7.8 0.5

1.5 MAX
0.76 0.1

2.54 0.5

2.54 0.5

14.0 0.5

2.7 MAX

0.5 0.1

Hitachi Code
JEDEC
EIAJ
Weight (reference value)

TO-220AB
Conforms
Conforms
1.8 g

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