The electrons velocity direction through the magnetic mirror field

for the low-light imaging system

TANG YuanHe a GAO HaiYang a DU YuFei a LIU HanChen b LIU Kai a LIU MingJun a
a
School of Science of Xian University of Technology, 710048, Xian, China
b
School of Science, Xian Polytechnic University, 710048, Xian, China
ABSTRACT
In order to improve the detectability of low-light imaging CCD (charge coupled devices), we have brought forward a
magnetic mirror device to apply to microchannel electron vase plate ((MEVP)) of low-light imaging system at room
temperature. After introduced the principle of restricted electron in magnetic mirror field to accumulate enough time for
low-light CCD imaging, magnetic intensity has been calculated discretionary position in the mirror, the formula of
electrons velocity direction has been given through the throat of magnetic mirror in this paper. The educed electrons
angle distribution between velocity direction and magnetic mirror axis has been simulated at 7-10 degree. This answers
for the design needs of microchannel vase plate now. The electrons loop speckle imaging has been obtained by
experiment; the result is same as theoretical value. It is proved that if the electrons educed by the magnetic mirror field at
the same cone angle and approximate speed, the gain of microchannel plate will be more stable, so that it is favorable to
reduce the noise of photoelectronic imaging.
Keywords: low-light imaging system, magnetic mirror, velocity distribution, microchannel electron vase plate

1.

INTRODUCTION

In the low-light imaging technology, the structures of intensified charge coupled devices (ICCD) and electron
bombarded charge coupled devices (EBCCD) all use photocathode to achieve photoelectrical conversion. In this system
photocathode couples with the photoelectrons acceptor (target screen) at first hand. As a result of the coherence and
time dispersivity of photon, the escaped electrons from the photocathode is known as uncertainty from the present
photoemissive as follows three-step models

[1-3]

: the electrons from emitter are excitated to the high energy state; the

simulated electron can lost part energy by collisions when they move to the surface; the simulated electrons which
arrived at surface need to conquer the affinity potential to run over. All these factors will make the velocity of the
escaped electrons uncertainty, and we have no alternative but use the mathematical statistics to describe it. These
uncertainties of escaped electrons have great effect on the noise of the next devices, and it also restricts the improvement
of detectability in low-light imaging system. According to the analysis, we have found:
(1) The time dispersivity can influence the collected ratio and velocity of the effective input signals in ICCD and CCD.
(2) The main reason of imaging aberration in the electron-optics lens is dispersivity of electron emergent direction. As
the ICCD, this reason could influence the numbers of the second electron gain and the uncertainty of the first electron

International Symposium on Photoelectronic Detection and Imaging 2007:

Photoelectronic Imaging and Detection, edited by Liwei Zhou, Proc. of SPIE Vol. 6621, 662122, (2008)
0277-786X/08/$18 doi: 10.1117/12.790978
Proc. of SPIE Vol. 6621 662122-1

collision probability, and the result can make the uncertainty to the output electron gain of microchannel plate, it also
causes noise to enlarge. As the EBCCD, this reason can make the direction uncertainty of electrons reaching the target
the electron multiplication rate and transport process are also affected in the silica body, the CCD signal noise and the
crosstalk of signal among the detective units would be increased.
(3) As both of ICCD and EBCCD, the dispersivity of the electron velocity will cause affection quitely on electron gain
coefficient, especially the gain correlation of ICCD image intensifier can be leaded a larger noise by its rapid increase of
the electron gain.
In order to improve the detectability of low-light imaging CCD, base on the principle of magnetic mirror of nucleus
fusion, we bring forward a magnetic mirror device as microchannel electron vase plate (MEVP) which presses close to
the photocathode and photoelectron acceptor for low-light imaging system at room temperature, the magnetic mirror
device can make of a new photoelectron acceptor

[4-8]

. The magnetic mirror applied to CCD imaging system can play

two roles: the first, it make sure that the photoelectrons escaped from the photocathode have enough accumulate time,
the accumulated signals can be to the initial threshold of the gain in potentiation stage, so that the weaker signals can be
detected by the imaging system which we have researched on [8]; the second, magnetic mirror field has its special
electron transmission characteristic, which reduces dispersivity of the escaped kinetic energy and the deflected degree
between the velocity direction of electrons emerged from photocathode and surface normal, which will be studied in this
paper.

2. THEORY OF THE ELECTRONIC TRANSFER CHARACTERISTIC IN MAGNETIC MIRROR FIELD

2.1

The principle of magnetic mirror field [4-8]

As fig.1, the magnetic mirror device is applied into the second electrostatic focusing inverse image generation intensifier.
The aim of MEVP is collecting electrons coming from photocathode, insuring the integral time of signal electrons. The
magnetic mirror can be accumulated electrons to longer time enough by the low light luminance at room temperature, so
the integration time of useful photons signals can be ensure; The long-time restriction of electrons can balance the
contradiction that the low-light detective time is long while the CCD signals accumulated time is short, so as to improve
the detective limit of weak illumination photoelectricity imaging system. The internal viewgraph of MEVP is shown as
fig.2. As the same with the design thought of microchannel plate, the MEVP is a sheet that consists by a great deal
parallel tiny single channel magnetic mirror. A tiny single channel magnetic mirror is shown as fig.3. The sign numbers
in fig.2 and fig.3 are used to represent that: 1 denotes the electric energy releasing loop (self closed circuit), 2 denotes
diamagnetic material (e.g. copper), 4 denotes excitation loops, 5 denotes the port of the single channel magnetic mirror
(diameter about 650m), 6 denotes axial magnetized permanent magnet material (its magnetization direction is
opposite to the magnetic direction of excitation loops), 7 denotes electrons. The thickness of the excitation loops
structure is the same with the permanent magnet and parallels each other, the later turn round the fronters flank tightly.
The principle of low light imaging CCD by a magnetic mirror is: Begin to shoot the image by CCD, the same steady
current are electrified to all of the excitation loop structures 4 of MEVP (fig.2) of two ports (we call the port as

magnetism throat), the photocathode and the electrostatic focusing amplifying electron optical system. Then MEVP has

Proc. of SPIE Vol. 6621 662122-2

been built the magnetic mirror field. At the same time, the other parts of subsequence system dont work. The magnetic
mirror is only accumulated electrons. The electron which is produced by the photon impacting the photocathode enters
into the corresponding access port of a single channel magnetic mirror. Then the electron moves back and forth in the
single channel magnetic mirror. When the electrons are accumulated enough time need for the low light imaging CCD,
stop the photocathode, and turn on all of the electrostatic focusing deflating electron optical system, microchannel plate
(ICCD) or accelerative electric field (EBCCD) and CCD, then add suitable voltage to the two electrodes M and N on the
internal walls of the permanent magnetic rings in the MEVP, viz. add the suitable voltage to the M and N as fig.1, the
electrons could be educed from the microchannel magnetic mirror field by the electric force, they enter into the
microchannel plate through the electrostatic focusing system. Since a microchannel magnetic mirror corresponds to a
sensitive unit of CCD, so the magnetic line transition of electrons isnt been considered in each magnetic mirror. This
process can retain the perfection image information and complete the transfer of the two-dimensional electronic image.
Using this principle of magnetic mirror field to accumulate the electron signal, the detectability of low-light imaging
CCD can be improved out and away.

Pkaincatlacdc Nagn.dcntLrror MCP fl1tphc: c:cca

Fig.1 The position of magnetic mirror structure in the second generation electrostatic focusing inverse image intensifier

)
Fig.2 The figure of MEVP structure by inside view

Fig.3 The principle of the single channel of magnetic mirror

2.2 The restrict principle to electron of magnetic mirror field

Magnetic mirror constrains the electrons by the magnetic moment conservation effect in the slowly changed magnetic

Proc. of SPIE Vol. 6621 662122-3

field. As the magnetic field B changing slowly with the time and space, the magnetic moment of electrons in the
magnetic field is approximately a constant. And the magnetic moment of electrons is [9]:

=
1
2

1
2

mv2
B

mv2 is the transverse kinetic energy W of the electron which perpendicularity the direction of the magnetic field.

v is the corresponding velocity component , m is the electron mass, B is the magnetic field.
As the electron moves from the weaker to the stronger magnetic field, the magnetic field increases unceasingly, so the
transverse kinetic energy W also increases unceasingly. Because the Lorentz force doesnt work to the electron, the
total energy of electron W = W + W is conservation ( W =
direction of the magnetic field). W increase while W

1
2

mv 2 is the electron kinetic energy paralleled the

reduce, if the magnetic field B is strong enough to make

W = W , so v = 0 , while the electron no longer move along the direction of the magnetic line, but to move from the
r
r
weak magnetic field to the strong at the action of force F = B B , the electron comes into being the movement of
reflection in a single channel magnetic mirror. So that the electrons would be constrained in the magnetic field to move
back and forth (fig.3), then the electrons can be educed when the needed-time is enough. The purpose of applying the
MEVP that not limited by the temperature into low light imaging system is making use of this device to accumulate the
photoelectrons produced from cathode, make sure that the useful optical signals have enough time to be accumulated,
and the accumulation of the optical signals can be achieved by the long time restriction of the electrons.
2.3 The electrons velocity direction from the throat of magnetic mirror field
When the voltage doesnt add to the two electrodes M and N as fig.1, the electrons do the gyral and reflecting movement
in the magnetic mirror. When the electrons are accumulated enough need-time for the low light imaging CCD, add
voltage to the two electrodes M and N on the internal walls of the permanent magnetic rings in the MEVP, it brings an
axis uniform electric field. The electrons are accelerated to the mirror right port (called magnetic throat) by the electric
force, and then all the electrons can be educed from the right magnetic throat z0 position as fig4. The direction of educed
electron at right throat will be calculated as following:
As fig.4, based on cylindrical polar coordinate, suppose the origin of coordinate z=0 is the center of the magnetic mirror.
The electronic incidence initial speed at left throat M is v0 while the electron is educed at right throat N (z=z0, B=B0). P
point is the position of the electron emitted at port N. The signs 1 and 2 are the movement orbits of two discretionary
electrons with the electric field, while the sign 3 is that of a certain electron under the additional electric field. Suppose
an electron is astricted on discretionary position z by the magnetic mirror field, after adding the electric field, the
electron will be influenced by the combined action of Lorentz and electric field force. And the electric field force has
only effect on the axis velocity v//, so the process of the electron moving from position z to the throat will satisfy the
kinetic energy theorem:

Eq z = W1 W 0 = 12 mv 2 + 12 mv 2 12 mv02

(2)

where v , v are the educed electronic transverse and axis speed at throat N (z=z0), z = z z 0 , q is electronic
charge, By the formula (1), we can get the magnetic moment of electrons at throat N is:

Proc. of SPIE Vol. 6621 662122-4

mv2
(3)
B0
Where B0 is the magnetic field intensity at z=z0. So the angle between the educed electronic velocity direction and

1
2

coordinate z is:

tan =

v
v

(4)

Combined with the expression (2) and (3), we can get:

1
mv02
tan =
Eqz0 Eqz +
1
2
B0

1
2

(5)

By the expression (5), it is obvious that the electron is educed from the magnetic throat by certain angle. Because of the
educed electronic 3-dimensional spatial distribution, the track of a few electrons should be a loop speckle if a collecting

t&ii

screen put behind the magnetic mirror device as fig.5.

Fig.4

The electrons motion in magnetic mirror field at cylindrical polar coordinates

Fig.5

The figure of electronic 2- dimension loop speckle distributing on the receiver screen

2.4 The magnetic intensity at the throat of magnetic mirror field

By the formula (5), if the magnetic intensity B0 at right throat is known, the angle of the educed electron can be got. The
expression of B0 is given as follow. The power series expression of B at discretionary position z in the magnetic mirror
field can be calculated [10]:

Proc. of SPIE Vol. 6621 662122-5

Br ( r , z ) =

( 2 k +1)

(z) r
1
1
r 5 (5 )
k +1 B
rB ( z ) + r 3 B ( z )
B ( z ) + = ( 1)

2
16
384
k ! ( k + 1) ! 2
k =0

Bz (r , z ) = B ( z )

r2
r 4 (4 )
B ( z ) +
B (z )+ =
4
64

( 1)

k =0

2 k +1

( z ) r 2k

2
( k !) 2

B(

2k )

(6)

(7)

Where B(z) is the magnetic field intensity along the axes position z of the magnetic mirror.
Structure 6 in fig.2 is predigested to two coaxial axial magnetized permanent rings whose interval is 2d. Suppose the
cross section width of single magnetized permanent is 2l, the internal radius R1, the external radius R2, and the
distribution of magnetic induction along the axes of magnetized permanents is [11]:
B1 ( z ) =

Br
z 2l d

2 ( z 2l d ) 2 + R22

Br
2

z 2l d

2
2

( z d ) + R2 ( z 2l d ) 2 + R12
zd

z + 2l + d

( z + 2l + d ) 2 + R22

z + 2l + d

( z + d ) + R ( z + 2l + d ) 2 + R12
z+d
2

2
2

( z d ) 2 + R12
zd

( z + d ) + R
z+d
2

2
1

(8)
The magnetic field direction of internal bore is opposite to the magnetization orientation.
The structure 1 in fig.2 is multiple electric solenoid on one port of MEVP. Suppose its external radius r0, the internal
radius r1, the axis width of cross section 2l, the axis unit turns n1, transverse unit turns n2, current I, and. If the interval of
the two coaxial solenoids is 2d, and their current direction are the same, the distribution of magnetic field on the axes is:

r0 + r02 + (l + z l d)2
r + r02 + (l z + l + d)2
1

+ (l z + l + d)ln 0
B2 (z) = 0nn
1 2I (l + z l d)ln
2

r1 + r12 + (l + z l d)2
r1 + r12 + (l z + l + d)2

r0 + r02 + (l + z + l + d)2
r + r02 + (l z l d)2

0nn
+ (l z l d)ln 0
1 2 I (l + z + l + d)ln

r1 + r12 + (l + z + l + d)2
r1 + r12 + (l z l d)2
(9)
where 0 is vacuum magnetic permeability. So the distribution of axis magnetic field intensity in the MEVP is:

B ( z ) = B2 ( z ) B1 ( z )
(10)
In order to calculate the first and second terms of the expression (6) and (7), we need to get its first and second order
derivative as follow:

B ( z ) = B2 ( z ) B1 ( z )
(11)

B ( z ) = B2 ( z ) B1( z )

Proc. of SPIE Vol. 6621 662122-6

(12)

Bring z=z0 into the expression (11),(12) and associating with the (6), (7), we can conclude that:

1
Br ( r , z0 ) = rB ( z0 )
2
Bz ( r , z 0 ) = B ( z 0 )

(13)

r2
B ( z0 )
4

(14)

So the magnetic field intensity at the right throat is:

1

B 2 ( z 0 ) 4 1 2
2
1

B0 ( r ) =
r + B ( z 0 ) B ( z 0 ) B ( z 0 ) r 2 + B 2 ( z 0 )
2
4

16

(15)

Introducing the expression (15) into (5), so the relationship of tan at right throat to electric field intensity E,
magnetic field intensity B and position z0 is given by following:

Eqz0 Eqz + 12 mv02

tan =
1
1/ 2
2
4
2
2
2
1
1
1
16 B ( z0 ) r + ( 4 B ( z0 ) 2 B ( z0 ) B ( z0 ) ) r + B ( z0 )

1
2

(16)

Where the results of B and B are given as appendix.

2.5

The simulation result of educed electron from the magnetism throat

In order to obtain tan numerical range of expression (16), The MEVP device has been simulated by Matlab
programmer. Supposing Br=1.23T, R1 =25m, R2 =2500m, r0 =50000m, r1 =2500m, l= 5000m, n1 =n2 =10000/m,
1
2

mv02 = 1eV ,I = 0.6A, d=13.91m, z0=9882.04m, = 1.29 10 19 N m , 0 = 4 10 7 N / A 2 . The axis magnetic

intensity at right throat is B0=1.71T by calculation. If the electron is astricted on the axis, viz. r=0 at cylindrical polar
coordinates, and because mostly electrons are astricted at center position close to the axis of magnetic mirror also [12], the
educed electron will not deflect the axis too much. When the coordinate z=[-3330, 3330]m and uniform electric field
E=7167V/m are given, the simulation result is tan =[0.123, 0.176], viz. the educed electronic angle distribution
between velocity direction and magnetic mirror axis is at 7 to 10 degree as fig. 6.

Proc. of SPIE Vol. 6621 662122-7

66

-4

-3

-2

Z (xlUrn)

Fig.6

3.

The figure between the educed electronic angle and its position in magnetic mirror field

THE EXPERIMENT OF THE ELECTRONIC TRANSFER IN MAGNETIC MIRROR FIELD

The experiment has been validated of expression (16). The electron beams speckle is on the receiver screen by no
magnetic mirror as fig. 7. It is obvious that is a uniformity electron speckle distributing. The electronic loop speckle
imaging has been obtained by magnetic mirror as fig.8; the loop speckle is formed by double influence of restriction
magnetic field and accelerated electric field. The experiment result has been answered for the expectation. The
expectation minimum radius of centric loop on screen is:
Rmin = f tan +

2 m
B0 q 2

where f is the distance between magnetism throat and screen, tan as eq.(16),

17
2 m is the minimum radius of
B0 q 2

electron loop at right throat as fig.4.

We know the electronic loop speckle should be obtained by theory as fig.5, and the experiment result is also answer for
the theory analysis above-mentioned. If the magnetic and electric field can be controlled, the educed electrons angle
distribution can be controlled at 7 to 10 degree, this just answers for the need of making MEVP. By this way, the
microchannel plate can be lay to parallel with the photocathode and focus electrodes axis, not inclines some angle. This
way can decrease the difficulty of making microchannel plate.

Proc. of SPIE Vol. 6621 662122-8

Fig.7

The electron beams speckle no magnetism mirror

Fig.8 The electron beams loop speckle by magnetism mirror of fig.7

4. CONCLUSIONS
Base on the principle of magnetism mirror of nucleus fusion, we have brought forward a magnetic mirror device as
MEVP which press close to photocathode and photoelectron acceptor for low-light imaging system at room temperature.
The magnetic mirror device can make of a new photoelectron acceptor. By theoretic calculation in this paper, some
conclusions are as following.
(1) The formula of educed electronic velocity direction has been calculated by a uniform electric field along the axis of
magnetic mirror. The educed electrons from the throat of magnetic mirror are loop speckle imaging on the target
screen. The distributing of magnetic intensity in a single-channels magnetic mirror field has been calculated also.
(2) The electronis loop speckle imaging on target screen has been simulated by computer. For the uniform electric field
intensity E=7167V/m and the correlative equipment structure and sizes, the value of tan =0.123-0.176 have been
obtained, i.e. the angle of educed electrons from the magnetic throat is 7-10 degree. The angle can answer for the
need of microchannel plate currently.
(3) By an experiment, the electronic loop speckle imaging is validated. So the aim gathering the educed electron beam
from the magnetic throat can be achieved. If selected a right magnetic and electric field intensity, the angle from the
magnetic throat can been accommodated.
(4) In low-light imaging system, after focused by an electron lens, the educed electron from the magnetic throat can
incidence with a cone angle along the target normal. The glancing incidence electrons have higher second gain not
only the MEVP but also the EBCCD. It is proved that if the electrons educed by the magnetic mirror field incidence
at the same cone angle and approximate speed, the gain of microchannel plate will be more stable, so that it is
favorable to reduce the noise of photoelectronic imaging.

ACKNOWLEDGMENTS

We would like to thank the support by the Education Office of Shanxi ProvinceNo.05JK197, No.07JK346; Natural
Science of Shaanxi Province (No.2006A08); the Doctor Foundation (No.108-210614) and the Innovation Foundation of

Proc. of SPIE Vol. 6621 662122-9

Xian University of Technology.

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2002
3. Bai Ting zhu, Jin Weiqi, The principle and technology of photoelectricity image. Beijing Institute of Technology
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system [patent]. No.200710017276.0
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APPENDIX

The results of B and B in expression(16)

B1 =

Br
2

R22
R22
R12
R12

2
2
2
2
2 3/ 2
[( z d ) + R12 ]3/ 2
[( z 2l d ) + R22 ]3/ 2 [( z d ) + R22 ]3/ 2 [( z 2l d ) + R1 ]

Br
2

R22
R22
R12
R12

2
2
2
2
[( z + 2l + d ) + R22 ]3/ 2 [( z + d ) + R22 ]3/ 2 [( z + 2l + d ) + R12 ]3/ 2 [( z + d ) + R12 ]3/ 2

Proc. of SPIE Vol. 6621 662122-10

 3R 2 ( z 2l d )
3R22 ( z d ) 3R12 ( z 2l d )
3R12 ( z d )
2

2
2
2
2
[( z 2l d ) + R22 ]5/ 2 [( z d ) + R22 ]5 / 2 [( z 2l d ) + R12 ]5/ 2 [( z d ) + R12 ]5/ 2
2
3R12 ( z + d )
3R22 ( z + d ) 3R12 ( z + 2l + d )
B 3R2 ( z + 2l + d )

2 [( z + 2l + d )2 + R22 ]5 / 2 [( z + d )2 + R22 ]5/ 2 [( z + 2l + d )2 + R12 ]5/ 2 [( z + d )2 + R12 ]5 / 2

Br
2

B1 =

B2 =

1
0 n1n2 I g1 + ( z d ) g1 g 2 + ( 2l + d z ) g 2 0 n1n2 I g3 + ( 2l + d + z ) g3 g 4 ( d + z ) g 4
2

1
B2 = 0 n1n2 I 2 g1 2 g2 + ( z d ) g1 + ( 2l + d z ) g2 0 n1n2 I 2 g3 2 g4 + ( 2l + d + z ) g3 ( d + z ) g4
2
where

r0 + r02 + ( z d )

g1 = ln

r1 + r12 + ( z d )

g3 = ln

g 2 = ln

r0 + r02 + ( 2l + z + d )
r1 + r12 + ( 2l + z + d )

g 4 = ln

r0 + r02 + ( 2l z + d )
r1 + r12 + ( 2l z + d )

r0 + r02 + ( z + d )
r1 + r12 + ( z + d )

1
1
2
g1 = ( z d ) 2

S1 + r0 S1 S 2 + r1S 2

1
1
2
g 2 = ( z d 2l ) 2

S3 + r0 S3 S 4 + r1S 4

1
1
2
g3 = ( z + d + 2l ) 2

S5 + r0 S5 S6 + r1S6

1
1
2
g 4 = ( z + d ) 2

S7 + r0 S7 S8 + r1S8

(S

2
1

g1 =

g 2 =

(S

2
3

r
r
2
2
+ r0 S1 ) ( z d ) 2 + 0 ( S 22 + r1S 2 ) ( z d ) 2 + 1
S1
S2

2
2
2
2
( S1 + r0 S1 )
( S2 + r1S2 )

r
r
2
2
+ r0 S3 ) ( z d 2l ) 2 + 0 ( S 42 + r1S 4 ) ( z d 2l ) 2 + 1
S3
S4

2
2
( S32 + r0 S3 )
( S42 + r1S4 )

Proc. of SPIE Vol. 6621 662122-11

g3 =

g 4 =

(S

2
5

(S

2
7

r
r
2
2
+ r0 S5 ) ( z + d + 2l ) 2 + 0 ( S62 + r1S6 ) ( z + d + 2l ) 2 + 1
S5
S6

2
2
( S52 + r0 S5 )
( S62 + r1S6 )
r
r
2
2
+ r0 S7 ) ( z + d ) 2 + 0 ( S82 + r1S8 ) ( z + d ) 2 + 1
S7
S8

2
2
( S72 + r0 S7 )
( S82 + r1S8 )

S1 = r02 + ( z d )

S 2 = r12 + ( z d )

S 4 = r12 + ( 2l z + d )
S7 = r02 + ( d + z )

S3 = r02 + ( 2l z + d )

S5 = r02 + ( 2l + z + d )
S8 = r12 + ( d + z )

S6 = r12 + ( 2l + z + d )

Proc. of SPIE Vol. 6621 662122-12