Beruflich Dokumente
Kultur Dokumente
SEMICONDUCTOR
DO-41
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
C
D
DO-41
MECHANICAL DATA
Min.
Dim.
A
Max.
5.20
25.4
4.10
0.71
0.86
C
2.00
2.70
D
All Dimensions in millimeter
@TA=90 C
SYMBOL
1N5817
1N5818
1N5819
UNIT
VRRM
VRMS
VDC
20
14
20
30
21
30
40
28
40
V
V
V
I(AV)
1.0
IFSM
25
VF
0.450
0.550
0.600
VF
0.750
0.875
0.900
IR
0.25
10
@TJ=25 C
@TJ=100 C
0.1
10
mA
mA
CJ
110
pF
R0JA
80
C/W
TJ
-55 to +125
TSTG
-55 to +150
0.8
0.6
0.4
0.2
0.1
20
40
60
80
100
120
40
30
20
10
0
1
140
AMBIENT TEMPERATURE , C
10
20
50
100
100
CAPACITANCE , (pF)
100
TJ = 25 C, f= 1MHz
10
1
1N5817
1N5818
1N5819
1.0
TJ = 25 C
PULSE WIDTH 300us
0.1
4
10
100
0.2
0.4
0.6
0.8
1.0
1.2