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N-channel MOS-FET
FAP-IIS Series
450V
> Features
-
0,65
10A
50W
> Applications
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (Tch 150C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
ID
I D(puls)
V GS
I AR
E AS
PD
T ch
T stg
Symbol
V (BR)DSS
V GS(th)
I DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
Rating
450
10
40
30
10
86,2
50
150
-55 ~ +150
Unit
V
A
A
V
A
mJ
W
C
C
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
ID=1mA
VGS =0V
ID=1mA
VDS= VGS
VDS=450V
Tch =25C
VGS=0V
Tch=125C
VGS =30V
VDS=0V
ID=5A
VGS =10V
ID=5A
VDS=25V
VDS=25V
VGS =0V
f=1MHz
VCC=300V
ID=10A
VGS=10V
RGS=10
Tch =25C
L = 100H
IF=2xI DR VGS =0V T ch =25C
IF=IDR V GS =0V
-dI F/dt=100A/s T ch =25C
Min.
450
3,5
Test conditions
channel to air
channel to case
Min.
Typ.
4,0
10
0,2
10
0,58
6
950
180
80
25
70
70
50
Max.
4,5
500
1,0
100
0,65
1450
270
120
40
110
110
80
10
1,1
400
5,0
Typ.
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
1,65
Max.
62,5
2,5
Unit
V
V
A
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
C
Unit
C/W
C/W
2SK2638-01MR
N-channel MOS-FET
450V
0,65
10A
FAP-IIS Series
50W
> Characteristics
Typical Output Characteristics
ID [A]
RDS(ON) []
VDS [V]
Tch [C]
VGS [V]
ID [A]
VGS(th) [V]
gfs [S]
Tch [C]
VDS [V]
VDS [V]
Qg [nC]
VSD [V]
Zth(ch-c) [K/W]
12
ID [A]
Eas [mJ]
10
IF [A]
VGS [V]
ID [A]
RDS(ON) []
ID [A]
C [F]
VDS [V]
t [s]