AF4512C

P & N-Channel 30-V (D-S) MOSFET

Features

General Description

-Low rDS(on) Provides Higher Efficiency and Extends

Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications

These miniature surface mount MOSFETs utilize High

Cell Density process. Low rDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are PWMDC-DC converters, power
management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones
power system.

Product Summary
VDS (V)
30
-30

rDS(on) (m)

ID (A)

40@VGS=4.5V
28@VGS=10V
80@VGS=-4.5V
52@VGS=-10V

6.0
7.0
-4.0
-5.2

Pin Assignments

Pin Descriptions

S1

D1

G1

D1

S2

D2

G2

D2

SOP-8

Pin Name

Description

S1
G1
D1
S2
G2
D2

Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)

Ordering information

Feature
F :MOSFET

A X

4512C X X X

PN

Package

Lead Free

Packing

S: SOP-8

Blank : Normal
L : Lead Free Package

Blank : Tube or Bulk

A : Tape & Reel

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.

Rev. 1.1 Jul 20, 2004

1/8

AF4512C
P & N-Channel 30-V (D-S) MOSFET
Absolute Maximum Ratings (TA=25C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG

Parameter

N-Channel
30
20
TA=25C
7
Continuous Drain Current (Note 1)
TA=70C
5.6
Pulsed Drain Current (Note 2)
20
Continuous Source Current (Diode Conduction) (Note 1)
1.3
TA=25C
2.1
Power Dissipation (Note 1)
1.3
TA=70C
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage

P-Channel
-30
-20
-5.2
-6.8
-20
-1.3
2.1
1.3
-55 to 150

Units
V
A
A
A
W
C

Thermal Resistance Ratings

Symbol
RJC
RJA

Parameter
Maximum Junction-to-Case (Note 1)
Maximum Junction-to-Ambient (Note 1)

Maximum
40
60

t < 5 sec
t < 5 sec

Units
C/W
C/W

Note 1: surface Mounted on 1x 1 FR4 Board.

Note 2: Pulse width limited by maximum junction temperature

Specifications (TA=25C unless otherwise noted)

Symbol

Parameter

Test Conditions

Ch

Limits
Min.
Typ.

Max.

30
-30
1
-1.0
20
-20
-

3
-3
100
100
1
-1
28
40
52
80
-

Unit

Static
V(BR)DSS
VGS(th)

Drain-Source breakdown Voltage

Gate-Threshold Voltage

IGSS

Gate-Body Leakage

IDSS

Zero Gate Voltage Drain Current

ID(on)

On-State Drain Current (Note 3)

rDS(on)

Drain-Source On-Resistance

gfs

(Note 3)

Forward Tranconductance
(Note 3)

VGS=0V, ID=250uA
VGS=0V, ID=-250uA
VDS= VGS, ID=250uA
VDS= VGS, ID=-250uA
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VDS=24V, VGS=0V
VDS=-24V, VGS=0V
VDS=5V, VGS=10V
VDS=-5V, VGS=-10V
VGS=10V, ID=7A
VGS=4.5V, ID=6A
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
VDS=15V, ID=7A
VDS=-15V, ID=-5A

Anachip Corp.
www.anachip.com.tw

N
P
N
P
N
P
N
P
N
P
N
P
N
P

1.95
-1.7
19
24
42
65
25
10

V
V
nA
uA
A

Rev. 1.1 Jul 20, 2004

2/8

AF4512C
P & N-Channel 30-V (D-S) MOSFET
Specifications (TA=25C unless otherwise noted)
Symbol

Parameter

Test Conditions

Ch

Limits
Min.
Typ.

Max.

Unit

Dynamic
Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

N-Channel
VDS=15V, VGS=10V
ID=7A
P-Channel
VDS=-15V, VGS=-10V
ID=-5A

N
P
N
P
N
P

10.7
10
1.7
2.2
2.1
1.7

26
13
-

nC

N-Channel
VDD=15, VGS=10V
ID=1A, RGEN=6
P-Channel
VDD=-15, VGS=-10V
ID=-1A, RGEN=6

N
P
N
P
N
P
N
P

8
7
5
13
23
14
3
9

16
14
10
24
37
25
6
17

nS

Switching
td(on)
tr
td(off)
tf

Turn-On Delay Time

Rise Time
Turn-Off Delay Time
Fall-Time

Note 3: Pulse test: PW < 300us duty cycle < 2%.

Note 4: Guaranteed by design, not subject to production testing.

Anachip Corp.
www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

3/8

AF4512C
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (N-Channel)

Anachip Corp.
www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

4/8

AF4512C
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (N-Channel) (Continued)

Anachip Corp.
www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

5/8

AF4512C
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (P-Channel)

Anachip Corp.
www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

6/8

AF4512C
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (P-Channel) (Continued)

Anachip Corp.
www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

7/8

AF4512C
P & N-Channel 30-V (D-S) MOSFET
Marking Information
SOP-8L
( Top View )
8

Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52

Logo

4512 C
AA Y W X

Part Number

Week code:
"A~Z": 01~26;
"A~Z": 27~52

Year code:
"4" =2004
~
Factory code

Package Information

Package Type: SOP-8L

L
VIEW "A"
D

0.015x45

C
A1

7 (4X)

A2

7 (4X)

VIEW "A"

A
A1
A2
B
C

Dimensions In Millimeters
Min.
Nom.
Max.
1.40
1.60
1.75
0.10
0.25
1.30
1.45
1.50
0.33
0.41
0.51
0.19
0.20
0.25

Dimensions In Inches
Min.
Nom.
Max.
0.055
0.063
0.069
0.040
0.100
0.051
0.057
0.059
0.013
0.016
0.020
0.0075
0.008
0.010

4.80

5.05

5.30

0.189

0.199

0.209

3.70

3.90

4.10

0.146

0.154

0.161

e
H
L
y

5.79
0.38
O
0

1.27
5.99
0.71
-

6.20
1.27
0.10
O
8

0.228
0.015
O
0

0.050
0.236
0.028
-

0.244
0.050
0.004
O
8

Symbol

Anachip Corp.
www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

8/8