SP8M3

Transistors

Switching
SP8M3
zExternal dimensions (Unit : mm)

zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).

SOP8
5.00.2
(5)

(1)

(4)

Max.1.75

1.50.1
0.15

0.50.1

6.00.3
3.90.15

(8)

zApplication
Power switching, DC / DC converter.

0.20.1

0.40.1
0.1

1.27

Each lead has same dimensions

zEquivalent circuit

zAbsolute maximum ratings (Ta=25C)

Parameter

Symbol

Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)

Continuous
Pulsed
Continuous
Pulsed

Total power dissipation

Channel temperature
Storage temperature

VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg

Limits
Nchannel
Pchannel
30
30
20
20
5.0
4.5
20
18
1.6
1.6
20
18
2
150
55 to +150

(8)

Unit
V
V
A
A
A
A
W
C
C

(7)

(6)

(5)

(1) (2) (3) (4)

(1)

(2)

(3)

(4)

1 ESD PROTECTION DIODE

2 BODY DIODE

1 Pw10s, Duty cycle1%

2 MOUNTED ON A CERAMIC BOARD.

(8) (7) (6) (5)

(1) Tr1 (Nch) Source

(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain

A protection diode is included between the gate and

the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.

zThermal resistance (Ta=25C)

Parameter
Channel to ambient

Symbol
Rth (ch-a)

Limits
62.5

Unit
C / W

MOUNTED ON A CERAMIC BOARD.

Rev.A

1/5

SP8M3
Transistors
N-ch
zElectrical characteristics (Ta=25C)
Parameter

Symbol

IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
VGS (th)
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

RDS (on)

Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd

Min.

30

1.0

3.0

Typ.

36
52
58

230
80
50
6
8
22
5
3.9
1.1
1.4

Max.
10

1
2.5
51
73
82

5.5

Unit
A
V
A
V
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC

Conditions
VGS=20V, VDS=0V
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=1mA
ID=5.0A, VGS=10V
ID=5.0A, VGS=4.5V
ID=5.0A, VGS=4V
ID=5.0A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=2.5A, VDD 15V
VGS=10V
RL=6.0
RG=10
VDD 15V
VGS=5V
ID=5.0A

Pulsed

zBody diode characteristics (Source-Drain Characteristics) (Ta=25C)

Parameter
Forward voltage

Symbol
VSD

Min.

Typ.

Max.
1.2

Unit
V

Conditions
IS=6.4A, VGS=0V

Pulsed

Rev.A

2/5

SP8M3
Transistors
P-ch
zElectrical characteristics (Ta=25C)
Parameter
Symbol Min.
IGSS

Gate-source leakage
Drain-source breakdown voltage V(BR) DSS 30
IDSS

Zero gate voltage drain current

VGS (th) 1.0
Gate threshold voltage

Static drain-source on-state

RDS (on)

resistance

3.5
Yfs
Forward transfer admittance
Ciss

Input capacitance
Coss

Output capacitance
Reverse transfer capacitance
Crss

Turn-on delay time

td (on)

Rise time
tr

Turn-off delay time

td (off)

Fall time
tf

Total gate charge

Qg

Gate-source charge
Qgs

Gate-drain charge
Qgd

Typ.

40
57
65

850
190
120
10
25
60
25
8.5
2.5
3.0

Max.
10

1
2.5
56
80
90

Unit
A
V
A
V
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC

Conditions
VGS= 20V, VDS=0V
ID= 1mA, VGS=0V
VDS=30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 4.5A, VGS= 10V
ID= 2.5A, VGS= 4.5V
ID= 2.5A, VGS= 4.0V
ID= 2.5A, VDS= 10V
VDS= 10V
VGS=0V
f=1MHz
ID= 2.5A, VDD 15V
VGS= 10V
RL=6.0
RG=10
VDD 15V
VGS= 5V
ID= 4.5A

Pulsed

zBody diode characteristics (Source-Drain Characteristics) (Ta=25C)

Parameter
Forward voltage

Symbol
VSD

Min.

Typ.

Max.
1.2

Unit
V

Conditions
IS= 1.6A, VGS=0V

Pulsed

Rev.A

3/5

SP8M3
Transistors
N-ch
zElectrical characteristic curves
10

10000

Ciss

100
Coss
Crss

Ta=25C
VDD=15V
VGS=10V
RG=10
Pulsed

1000

tf

100

td (off)

GATE-SOURCE VOLTAGE : VGS (V)

Ta=25C
f=1MHz
VGS=0V

SWITCHING TIME : t (ns)

CAPACITANCE : C (pF)

1000

tr

10

td (on)
1

10

100

0.1

DRAIN-SOURCE VOLTAGE : VDS (V)

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (m)

DRAIN CURRENT : ID (A)

Ta=125C
Ta=75C
Ta=25C
Ta= 25C

0.1

0.01

0.001
0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1
0

10

10

250

ID=5A
ID=2.5A

150
100
50
0

10

12

1000

14

100

10

1
0.1

VGS=0V
Pulsed

10

Ta=125C
Ta=75C
Ta=25C
Ta= 25C

0.1

0.01
0.0

16

VGS=4.5V
Pulsed

Ta=125C
Ta=75C
Ta=25C
Ta= 25C

Fig.3 Dynamic Input Characteristics

10

200

TOTAL GATE CHARGE : Qg (nC)

0.5

1.0

1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.6 Source Current vs.

Source-Drain Voltage

Fig.5 Static Drain-Source

On-State Resistance vs.
Gate-Source Voltage

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (m)

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (m)

VGS=10V
Pulsed

GATE-SOURCE VOLTAGE : VGS (V)

100

1
0.1

Ta=25C
Pulsed

Fig.4 Typical Transfer Characteristics

Ta=125C
Ta=75C
Ta=25C
Ta= 25C

10

300

GATE-SOURCE VOLTAGE : VGS (V)

1000

Fig.2 Switching Characteristics

VDS=10V
Pulsed

DRAIN CURRENT : ID (A)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

10

SOURCE CURRENT : Is (A)

0.1

1
0.01

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (m)

10
0.01

Ta=25C
9 VDD=15V
ID=5A
8
RG=10
7 Pulsed

1000

VGS=4V
Pulsed

Ta=125C
Ta=75C
Ta=25C
Ta= 25C

100

10

1
0.1

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source

On-State Resistance
vs. Drain Current ()

Fig.8 Static Drain-Source

On-State Resistance
vs. Drain Current ()

Fig.9 Static Drain-Source

On-State Resistance
vs. Drain Current ()

Rev.A

10

4/5

SP8M3
Transistors
P-ch
zElectrical characteristic curves

Ciss

Coss
Crss

10

tf
td (off)
100

td (on)

10

tr
1
0.01

100

0.1

DRAIN-SOURCE VOLTAGE : VDS (V)

0.1

0.01

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (m)

DRAIN CURRENT : ID (A)

Ta=125C
Ta=75C
Ta=25C
Ta= 25C

0.001
0.0

VGS= 10V
Pulsed

Ta=125C
Ta=75C
Ta=25C
Ta= 25C

3
2
1
0

ID=2.0A

100

50

10

12

10

100

10
0.1

10

14

VGS=0V
Pulsed
Ta=125C
Ta=75C
Ta=25C
Ta= 25C

0.1

0.01
0.0

16

VGS= 4.5V
Pulsed
Ta=125C
Ta=75C
Ta=25C
Ta= 25C

10

0.5

1.0

1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.5 Static Drain-Source

On-State Resistance vs.
Gate-Source Voltage

1000

10

ID=4.5A

150

Fig.3 Dynamic Input Characteristics

GATE-SOURCE VOLTAGE : VGS (V)

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (m)

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (m)

10
0.1

TOTAL GATE CHARGE : Qg (nC)

Ta=25C
Pulsed

Fig.4 Typical Transfer Characteristics

100

10

200

GATE-SOURCE VOLTAGE : VGS (V)

1000

Fig.2 Switching Characteristics

VDS= 10V
Pulsed

Ta=25C
VDD= 15V
ID= 4.5A
RG=10
Pulsed

DRAIN CURRENT : ID (A)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

10

SOURCE CURRENT : IS (A)

0.1

1000

Fig.6 Source Current vs.

Source-Drain Voltage

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (m)

10
0.01

Ta=25C
VDD= 15V
VGS= 10V
RG=10
Pulsed

GATE-SOURCE VOLTAGE : VGS (V)

1000

100

10000

Ta=25C
f=1MHz
VGS=0V

SWITCHING TIME : t (ns)

CAPACITANCE : C (pF)

10000

1000

100

10
0.1

VGS= 4V
Pulsed
Ta=125C
Ta=75C
Ta=25C
Ta= 25C

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source

On-State Resistance
vs. Drain Current ()

Fig.8 Static Drain-Source

On-State Resistance
vs. Drain Current ()

Fig.9 Static Drain-Source

On-State Resistance
vs. Drain Current ()

Rev.A

10

5/5

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1