Sie sind auf Seite 1von 6

UNISONIC TECHNOLOGIES CO.

, LTD
2N4401

NPN SILICON TRANSISTOR

NPN GENERAL PURPOSE


AMPLIFIER
DESCRIPTION
The UTC 2N4401 is designed for use as a medium power
amplifier and switch requiring collector currents up to 500mA.

TO-92

*Pb-free plating product number: 2N4401L

ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2N4401-T92-B
2N4401L-T92-B
2N4401-T92-K
2N4401L-T92-K

Package
TO-92
TO-92

Pin Assignment
1
2
3
E
B
C
E
B
C

Packing
Tape Box
Bulk

2N4401L-T92-R
(1)Packing Type

(1) B: Tape Box, K: Bulk

(2)Package Type

(2) T92: TO-92

(3)Lead Plating

(3) L: Lead Free Plating, Blank: Pb/Sn

www.unisonic.com.tw
Copyright 2005 Unisonic Technologies Co., Ltd

1 of 6
QW-R201-052,B

2N4401

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25, unless otherwise specified)


PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current-Continuous
IC
600
mA
625
mW
Total Device Dissipation
PD
mW/
Derate above 25
5.0
Junction Temperature
TJ
+150

Storage Temperature
TSTG
-40 ~ +150

Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (Ta=25, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

SYMBOL
JA
JC

RATING
200
83.3

UNIT
/W
/W

ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified)


PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (note)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
ON CHARACTERISTICS (note)

DC Current Gain

Collector-Emitter Saturation Voltage


Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS1


Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
SWITCHING CHARACTERISTICS

SYMBOL
BVCBO
BVCEO
BVEBO
ICEX
IBL

MIN

IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCE=35V, VEB=0.4V
VCE=35V, VEB=0.4V

60
40
6

VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE(SAT1) IC=150mA, IB=15mA
VCE(SAT2) IC=500mA, IB=50mA
VBE(SAT1) IC=150mA, IB=15mA
VBE(SAT2) IC=500mA, IB=50mA

20
40
80
100
40

hFE1
hFE2
hFE3
hFE4
hFE5

fT
Ccb
Ceb
hie
hre
hfe
hoe

Delay Time

tD

Rise Time

tR

Storage Time

tS

Fall Time

TEST CONDITIONS

tF

VCE=10V, IC=20mA, f=100MHz


VCB=5V, IE=0, f=140kHz
VBE=0.5V, IC=0, f=140kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCC=30V, VEB=2V
IC=150mA IB1=15mA
VCC=30V, VEB=2V
IC=150mA IB1=15mA
VCC=30V, IC=150mA
IB1= IB2=15mA

0.75

TYP

MAX

V
V
V
A
A

300
0.4
0.75
0.95
1.2

250

1
0.1
40
1

UNIT

V
V
V
V
MHz
pF
pF
k
-4
10

6.5
30
15
8
500
30

mhos

15

ns

20

ns

225

ns

30

ns

Note: Pulse test: PulseWidth300s, Duty Cycle2%

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

2 of 6
QW-R201-052,B

2N4401

NPN SILICON TRANSISTOR

TEST CIRCUIT
30V
200
16V
0

1K

220ns

500

Figure1. Saturated Turn-On Switching Timer

-1.5V 6V
1k

Note:BVEBO =5V
30V
0

220ns

37

1K
50

Figure2. Saturated Turn-Off Switching Timer

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

3 of 6
QW-R201-052,B

2N4401

NPN SILICON TRANSISTOR

Typical Pulsed Current Gain


vs Collector Current

Typical Pulsed Current Gain, hFE

500

VCE =5V
400
125

300
200

25

100

-40

0
0.1 0.3 1 3 10 30 100 300
Collector Current, IC (mA)

Collector-Emitter Voltage, VCESAT (V)

TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage
vs Collector Current
0.4
=10

0.3

125
0.2
25
0.1
-40
1

=10

-40
0.8

25
125

0.6

0.4
1

10
100
Collector Current, I C (mA)

100

VCB=40V

10
1
0.1

500

Base-Emitter On Voltage
vs Collector Current

VCE =5V
-40

0.8

25
0.6
125
0.4
0.2
0.1

1
10
Collector Current, I C (mA)

25

Emitter Transition and Output


Capacitance vs Reverse Bias Voltage
20
Capacitance (pF)

Collector Current, ICBO (nA)

500

Collector-Cutoff Current
vs Ambient Temperature

500

Base-Emitter OnVoltage, VBEON (V)

Base-Emitter Voltage, VBESAT (V)

Base-Emitter Saturation Voltage


vs Collector Current

10
100
Collector Current, IC (mA)

f=1MHz

16
Cte
12
8

Cob

4
25

50
75
100 125 150
Ambient Temperature, T A()

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

0.1

1
10
Reverse Bias Voltage (V)

100

4 of 6
QW-R201-052,B

2N4401

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

400

Turn On and Turn Off Times


vs Collector Current

400

IC
I B1=I B2= 10

320

I B1=I B2=
320
Time (ns)

240
160
80

240

80

t off

Power Dissipation vs
Ambient Temperature

TO-92

0.25

25

Char.Relative To Voltage at TA=25

VCE =10V
I C=10mA
f=1kHz

1.6
1.2

hre

hie
hfe
hoe

0.8
0.4
0
0

40
60
80 100
20
Ambient Temperature, TA (C)

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

VCE =10V
T A=25
f=1kHz
hoe
hre

2
0

75 100 125 150


50
Temperature ()

Common Emitter Characteristics


2

100
1000
Collector Current, I C (mA)

Common Emitter Characteristics

Char.Relative To Voltage at
I C=10mA

0.5

2.4

0
10

100
1000
Collector Current, IC (mA)

0.75

tR

tF
tD

Char.Relative To Voltage at VCE=10V

Power Dissipation, PD (W)

tS

160

ton
0
10

IC
10

VCC =25V

VCC =25V
Time (ns)

Switching Times
vs Collector Current

1.3
1.25
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0

hfe
hie
30 40 50
10
20
Collector Current, IC (mA)

60

Common Emitter Characteristics


T A=25
I C=10mA
f=1kHz

hfe
hie

hre
hoe
5
10 15 20 25 30
Collector Voltage, VCE (V)

35

5 of 6
QW-R201-052,B

2N4401

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

6 of 6
QW-R201-052,B

Das könnte Ihnen auch gefallen