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MJ15025 (PNP)
Silicon Power Transistors
The MJ15023 and MJ15025 are power transistors designed for high
power audio, disk head positioners and other linear applications.
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Features
16 AMPERES
SILICON POWER TRANSISTORS
200 250 VOLTS, 250 WATTS
COLLECTOR
CASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MJ15023
MJ15025
VCEO
CollectorBase Voltage
MJ15023
MJ15025
VCBO
EmitterBase Voltage
VEBO
Vdc
CollectorEmitter Voltage
VCEX
400
Vdc
IC
16
Adc
ICM
30
Adc
IB
Adc
PD
250
1.43
W
W/_C
65 to +200
_C
Vdc
1
BASE
200
250
Vdc
2
EMITTER
350
400
TJ, Tstg
CASE
TO204 (TO3)
CASE 107
STYLE 1
MARKING DIAGRAM
MJ1502xG
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
RqJC
0.70
_C/W
ORDERING INFORMATION
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2013
Device
Package
Shipping
MJ15023G
TO204
(PbFree)
MJ15025G
TO204
(PbFree)
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
200
250
ICEX
ICEO
IEBO
mAdc
250
250
mAdc
500
500
mAdc
500
5
2
15
5
60
1.4
4.0
2.2
600
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (nonrepetitive))
(VCE = 80 Vdc, t = 0.5 s (nonrepetitive))
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
VCE(sat)
BaseEmitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
MHz
Cob
pF
100
50
TC = 25C
20
10
5.0
1.0
0.2
0.1
0.1
0.2
20
0.5 10
50 100
250 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1k
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2
4000
3000
TYPICAL CHARACTERISTICS
Cib
C, CAPACITANCE (pF)
TJ = 25C
1000
500
Cob
100
0.3 0.5
1.0
5.0
10
30
50
100
300
TJ = 25C
VCE = 10 V
fTest = 1 MHz
9
8
7
6
5
4
3
2
1
0
0.1
2.0
0.3
0.5
1.0
IC, COLLECTOR CURRENT (AMPS)
5.0
10
Figure 2. Capacitances
200
TJ = 100C
VCE = 4.0 V
1.8
V, VOLTAGE (VOLTS)
100
TJ = 25C
50
20
10
1.4
1.0
TJ = 25C
VBE(on) @ VCE = 4.0 V
0.8
5.0
100C
25C
0.2
2.0
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
10
20
VCE(sat) @ IC/IB = 10
100C
0.1
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 5. On Voltages
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3
5.0
10
TO204 (TO3)
CASE 107
ISSUE Z
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
T
E
D
2 PL
0.13 (0.005)
U
T Q
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
SEATING
PLANE
T Y
Q
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
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limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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4
MJ15023/D