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InductionHeatingSeries

ReverseconductingIGBTwithmonolithicbodydiode

IHW20N120R3

Datasheet

IndustrialPowerControl
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

ReverseconductingIGBTwithmonolithicbodydiode

Features:

Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
LowEMI
QualifiedaccordingtoJESD-022fortargetapplications
Pb-freeleadplating;RoHScompliant
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:
G

Inductivecooking


KeyPerformanceandPackageParameters
Type
IHW20N120R3

VCE

IC

VCEsat,Tvj=25C

Tvjmax

Marking

Package

1200V

20A

1.48V

175C

H20R1203

PG-TO247-3

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries
Maximumratings
Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

1200

DCcollectorcurrent,limitedbyTvjmax
TC=25C
TC=100C

IC

40.0
20.0

Pulsedcollectorcurrent,tplimitedbyTvjmax

ICpuls

60.0

TurnoffsafeoperatingareaVCE1200V,Tvj175C

60.0

Diodeforwardcurrent,limitedbyTvjmax
TC=25C
TC=100C

IF

40.0
20.0

Diodepulsedcurrent,tplimitedbyTvjmax

IFpuls

60.0

Gate-emitter voltage
TransientGate-emittervoltage(tp10s,D<0.010)

VGE

20
25

PowerdissipationTC=25C
PowerdissipationTC=100C

Ptot

310.0
155.0

Operating junction temperature

Tvj

-40...+175

Storage temperature

Tstg

-55...+175

Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s

260

Mounting torque, M3 screw


Maximum of mounting processes: 3

0.6

Nm

ThermalResistance
Parameter
Characteristic

Symbol Conditions

Max.Value

Unit

IGBT thermal resistance,


junction - case

Rth(j-c)

0.48

K/W

Diode thermal resistance,


junction - case

Rth(j-c)

0.48

K/W

Thermal resistance
junction - ambient

Rth(j-a)

40

K/W

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries
ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Parameter

Symbol Conditions

Value
min.

typ.

max.

1200

VGE=15.0V,IC=20.0A
Tvj=25C
Tvj=125C
Tvj=175C

1.48
1.70
1.80

1.70
-

1.55
1.70
1.80

1.75
6.4

Unit

StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA
Collector-emitter saturation voltage VCEsat

V
V

Diode forward voltage

VF

VGE=0V,IF=20.0A
Tvj=25C
Tvj=125C
Tvj=175C

Gate-emitter threshold voltage

VGE(th)

IC=0.50mA,VCE=VGE

5.1

5.8

Zero gate voltage collector current

ICES

VCE=1200V,VGE=0V
Tvj=25C
Tvj=175C

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

100

nA

Transconductance

gfs

VCE=20V,IC=20.0A

18.3

Integrated gate resistor

rG

V
V

100.0 A
2500.0

none

ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Parameter

Symbol Conditions

Value

Unit

min.

typ.

max.

1503

50

42

211.0

nC

13.0

nH

DynamicCharacteristic
Input capacitance

Cies

Output capacitance

Coes

Reverse transfer capacitance

Cres

Gate charge

QG

Internal emitter inductance


measured 5mm (0.197 in.) from
case

LE

VCE=25V,VGE=0V,f=1MHz
VCC=960V,IC=20.0A,
VGE=15V

pF

SwitchingCharacteristic,InductiveLoad
Parameter

Symbol Conditions

Value

Unit

min.

typ.

max.

387

ns

25

ns

0.95

mJ

IGBTCharacteristic,atTvj=25C
Turn-off delay time

td(off)

Fall time

tf

Turn-off energy

Eoff

Tvj=25C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
rG=15.0,L=180nH,
C=39pF
L,CfromFig.E
Energy losses include tail and
diode reverse recovery.

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries
SwitchingCharacteristic,InductiveLoad
Parameter

Symbol Conditions

Value

Unit

min.

typ.

max.

454

ns

84

ns

1.65

mJ

IGBTCharacteristic,atTvj=175C
Turn-off delay time

td(off)

Fall time

tf

Turn-off energy

Eoff

Tvj=175C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
rG=15.0,L=180nH,
C=39pF
L,CfromFig.E
Energy losses include tail and
diode reverse recovery.

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

100

IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

60

TC=80
40

TC=110

20

0
0.01

0.1

10

tp=1s
10

20s
100s
1ms
10ms
1
DC

0.1

100

5s

f,SWITCHINGFREQUENCY[kHz]

10

100

1000

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj175C,D=0.5,VCE=600V,VGE=15/0V,
rG=15)

Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25C,Tj175C;VGE=15V)

350

300

IC,COLLECTORCURRENT[A]

Ptot,POWERDISSIPATION[W]

40
250

200

150

100

20

50

25

50

75

100

125

150

175

TC,CASETEMPERATURE[C]

25

50

75

100

125

150

175

TC,CASETEMPERATURE[C]

Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj175C)

Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE15V,Tj175C)

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

60

60

VGE=20V

VGE=20V
50

17V

IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

50

15V
40

13V
11V
9V

30

7V
5V
20

10

17V
15V

40

13V
11V
9V

30

7V
5V
20

10

VCE,COLLECTOR-EMITTERVOLTAGE[V]

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 5. Typicaloutputcharacteristic
(Tj=25C)

Figure 6. Typicaloutputcharacteristic
(Tj=175C)

3.0

VCE(sat),COLLECTOR-EMITTERSATURATION[V]

Tj=25C
Tj=175C

IC,COLLECTORCURRENT[A]

60

50

40

30

20

10

10

IC=10A
IC=20A
IC=40A

2.5

2.0

1.5

1.0

12

VGE,GATE-EMITTERVOLTAGE[V]

25

50

75

100

125

150

175

Tj,JUNCTIONTEMPERATURE[C]

Figure 7. Typicaltransfercharacteristic
(VCE=20V)

Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

td(off)
tf

td(off)
tf
1000

t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]

1000

100

10

10

20

30

100

10

40

10

20

IC,COLLECTORCURRENT[A]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175C,VCE=600V,VGE=15/0V,
rG=15,testcircuitinFig.E)

t,SWITCHINGTIMES[ns]

100

10

25

50

75

100

125

150

40

50

Figure 10. Typicalswitchingtimesasafunctionofgate


resistor
(ind.load,Tj=175C,VCE=600V,VGE=15/0V,
IC=20A,testcircuitinFig.E)

VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

td(off)
tf

1000

30

rG,GATERESISTOR[]

175

Tj,JUNCTIONTEMPERATURE[C]

typ.
min.
max.

25

50

75

100

125

150

175

Tj,JUNCTIONTEMPERATURE[C]

Figure 11. Typicalswitchingtimesasafunctionof


junctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=20A,
rG=15,testcircuitinFig.E)

Figure 12. Gate-emitterthresholdvoltageasafunction


ofjunctiontemperature
(IC=0.5mA)

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

3
Eoff

Eoff

E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

10

20

30

40

10

20

IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175C,VCE=600V,VGE=15/0V,
rG=15,testcircuitinFig.E)

50

2.2
Eoff

E,SWITCHINGENERGYLOSSES[mJ]

Eoff

E,SWITCHINGENERGYLOSSES[mJ]

40

Figure 14. Typicalswitchingenergylossesasa


functionofgateresistor
(ind.load,Tj=175C,VCE=600V,VGE=15/0V,
test circuit in Fig. E)

30

rG,GATERESISTOR[]

25

50

75

100

125

150

2.0

1.8

1.6

1.4

1.2
400

175

Tj,JUNCTIONTEMPERATURE[C]

500

600

700

800

900

1000

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 15. Typicalswitchingenergylossesasa


functionofjunctiontemperature
(indload,VCE=600V,VGE=15/0V,IC=20A,
rG=15,testcircuitinFig.E)

Figure 16. Typicalswitchingenergylossesasa


functionofcollectoremittervoltage
(ind.load,Tj=175C,VGE=15/0V,IC=20A,
rG=15,testcircuitinFig.E)

10

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

15.0
240V
960V

1000

C,CAPACITANCE[pF]

VGE,GATE-EMITTERVOLTAGE[V]

12.5

10.0

7.5

5.0

Ciss
Coss
Crss

100

2.5

0.0

40

80

120

160

10

200

QGE,GATECHARGE[nC]

10

30

Figure 18. Typicalcapacitanceasafunctionof


collector-emittervoltage
(VGE=0V,f=1MHz)

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

D=0.5
0.2
0.1

0.1

0.05
0.02
0.01
single pulse

0.01

D=0.5
0.2

1E-5

1E-4

0.001

0.01

0.1

0.1

0.1

0.05
0.02
0.01
single pulse

0.01

i:
1
2
3
4
5
6
ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137
i[s]:
2.8E-5 4.7E-5
2.0E-4 1.2E-3 9.9E-3 0.08835259

0.001
1E-6

20

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 17. Typicalgatecharge


(IC=20A)

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

i:
1
2
3
4
5
6
ri[K/W]: 9.8E-3 0.0141 0.0698 0.1158 0.1569 0.1137
i[s]:
2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259

0.001
1E-6

tp,PULSEWIDTH[s]

1E-5

1E-4

0.001

0.01

0.1

tp,PULSEWIDTH[s]

Figure 19. IGBTtransientthermalimpedance


(D=tp/T)

Figure 20. Diodetransientthermalimpedanceasa


functionofpulsewidth
(D=tp/T)

11

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

40

3
IC=10A
IC=20A
IC=40A

30

VF,FORWARDVOLTAGE[V]

IF,FORWARDCURRENT[A]

Tj=25C
Tj=175C

20

10

VF,FORWARDVOLTAGE[V]

25

50

75

100

125

150

175

Tj,JUNCTIONTEMPERATURE[C]

Figure 21. Typicaldiodeforwardcurrentasafunction


offorwardvoltage

12

Figure 22. Typicaldiodeforwardvoltageasafunction


ofjunctiontemperature

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

PG-TO247-3

13

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

14

Rev.2.5,2013-02-12
Free Datasheet http://www.datasheet4u.com/

IHW20N120R3
InductionHeatingSeries

RevisionHistory
IHW20N120R3
Revision:2013-02-12,Rev.2.5
Previous Revision
Revision

Date

Subjects (major changes since last revision)

1.1

2008-05-06

1.2

2008-07-11

2.3

2008-07-29

2.4

2009-04-01

2.5

2013-02-12

Layout change

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Publishedby
InfineonTechnologiesAG
81726Munich,Germany
81726Mnchen,Germany
2013InfineonTechnologiesAG
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Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
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includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.

15

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