K. N.

Toosi University of Technology

Digital Electronics
Chapter 7. Field-Effect Transistors
By:
B
y: FARHAD
FARHAD FARADJI,
FARA
ADJI, Ph.D.
Ph.D.
Assistant
A
ssisstant Professor,
Professo
or,
Electrical
Electrical aand
nd Computer
Computer EEngineering,
ngineering
K. N. Toosi University of Technology
http://wp.kntu.ac.ir/faradji/DigitalElectronics.htm
Reference:
DIGITAL INTEGRATED CIRCUITS: ANALYSIS and DESIGN, 2005,
John E. Ayers
1

7.1. Introduction

KNTU

Field-effect transistors (FETs) have several significant differences

compared to bipolar junction transistors.
First, they are voltage controlled rather than current controlled.
This results in low levels of standby supply current and standby power
dissipation.
on.
Second, they are majority
majorityy carrier
carrrier devices.
devices.
Third, they can
than
n be
be made
made ssmaller
maller th
han BJTs
BJTs using same
saame fabrication
fab
technology.

Digital Electronics

Chapter 7. Field-Effect Transistors

7.1. Introduction

KNTU

3 basic types of FETs are:

metal oxidesemiconductor field-effect transistor (MOSFET),
junction field-effect transistor (JFET),
metalsemiconductor field-effect transistor (MESFET).
MOSFET is very
ry important
impo
ortant for ICs
ICs aand
nd is
is eemphasized
mphaasizzed iin
n tthis
hi chapter.

Digital Electronics

Chapter 7. Field-Effect Transistors

7.1. Introduction

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7.1.1. MOSFET
MOSFET is also known as insulated gate field-effect transistor (IGFET).
3 terminals of this device are source, gate, and drain, labeled S, G, and D.
Sometimes, a 4th terminal is used: body or substrate (labeled B).
ed betw
ween G and
d S controls
conttrolss current
curre
entt between
betwee D and S.
Voltage applied
between

Digital Electronics

Chapter 7. Field-Effect Transistors

7.1. Introduction

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7.1.1. MOSFET
Basic operation of MOSFET:
9 If G is biased positively with respect
to S, negatively charged electrons
are attracted to interface between
semiconductor
oxide.
or and o
xide.
nducting cchannel
hannel
9 This forms a con
conducting
between D and
nd SS..
9 Then, if D is biased
i d positively
i i l with
ih
respect to S, electrons in channel will drift from S to D.
9 This results in a conventional current from D to S.
9 Current involves only electrons.
9 It is called an n-channel MOSFET.
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Chapter 7. Field-Effect Transistors

7.1. Introduction

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7.1.1. MOSFET
There are also p-channel devices.
In p-channel device, S and D are
p-type regions.
Holes drift in channel.
cu
urrents have
have
Voltages and currents
opposite polarities
ariities compared
compared tto
o
those in n-channel
an
nnel device.
device.

Digital Electronics

Chapter 7. Field-Effect Transistors

7.1. Introduction

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7.1.1. MOSFET
For device shown, no conducting channel
can be between D and S unless
a positive voltage is applied
between G and S.
This device is norma
normally
ally off.
ETss aare
re ccalled
alled
These MOSFETs
enhancementt ttype.
ype.
A gate bias is required
a conducting
i d to enhance
h
d i channel.
h
l

Digital Electronics

Chapter 7. Field-Effect Transistors

7.1. Introduction

KNTU

7.1.1. MOSFET
Depletion-type devices are normally on.
A G-S bias is necessary to deplete
conducting channel.
Normally off enhancement-type
MOSFETs are preferred
prefe
erred in
n ICs
ICs for
for
disssipation.
low standby dissipation.

Digital Electronics

Chapter 7. Field-Effect Transistors

7.1. Introduction

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7.1.1. MOSFET
9 Some MOSFET symbols are shown.
9 Most convenient are middle four.
9 These result in simplest and neatest
circuit diagrams.
ms.
body cconnection
onnection
9 They eliminatee body
and avoid usee of
of other
oth
her aarrows.
rrows..
9 Inversion circle
on
le o
n G iindicates
ndicates
a p-type device.
9 Broad line in channel indicates
a depletion-type device.
9 We use these simplified symbols,
except in situations for which body bias is used.
9 Take a look at this link.
Digital Electronics

Chapter 7. Field-Effect Transistors

7.1. Introduction

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7.1.2. JFET
Junction field-effect transistor (JFET)
takes it name from G structure.
G involves a p-n junction.
For an n-channel
nnel device, S, D, and
channel regions
ons are
arre n-type.
n-ttype.
With zero biass between
betweeen G and
and S,
S,
there is a conducting
du
ucting channel
channel from
from D to
to S.
S.
JFET is a depletion-type device.
If a reverse bias is applied to the G-S junction:
It widens depletion region.
It reduces channel conductivity.

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Chapter 7. Field-Effect Transistors

10

7.1. Introduction

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7.1.2. JFET
A sufficiently negative bias on G
will pinch off channel entirely.
JFET is a field-effect device in which
G-S bias controls
rols D-S
D S current.
ET, no
o iinsulating
nsulaatingg oxide
oxid
de llayer
ayer
Unlike MOSFET,
is under G.
Gate pn junction
ctiion must
must be
be kept
kept rreverse
everse biased
biased in order
orrder to avoid a DC gate
current.

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Chapter 7. Field-Effect Transistors

11

7.1. Introduction

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7.1.2. JFET

A p-channel JFET
FEET utilizes
utilizes p-type
p-type regions
regions for
for S,
S, D, and
d channel.
chan
Gate region is doped n-type.
Voltages and currents are reversed in polarity compared to n-channel
device.

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Chapter 7. Field-Effect Transistors

12

7.1. Introduction

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7.1.2. JFET

9 Enhancement-type
off)
t-ttype (normally
(normally o
ff) JFETs
JFETs can
can be
be fabricated
fabriicated but with some
difficulty.
9 These devices must be made so that depletion region of G junction
pinches off channel at zero G-S bias.
9 This can be done, but only with precise control of channel thickness and
doping.

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Chapter 7. Field-Effect Transistors

13

7.1. Introduction

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7.1.2. JFET

JFETs are not used in digital

digitall ICs
IC
Cs for 2 reasons.
h
tl depletion-type
depllettion t pe devices.
d i
First, JFETs are iinherently
This results in excessive standby dissipation, unless normally off
(enhancement-type) devices are fabricated.
Second, even if normally off JFETs are used, p-n junctions used in gates
are leaky compared to MOS structures used in MOSFETs.
Have a look at this link.
Digital Electronics

Chapter 7. Field-Effect Transistors

14

7.1. Introduction

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7.1.3. MESFET
Metal-semiconductor field-effect
transistor (MESFET) is similar to JFET.
A metal-semiconductor junction
is used for G structure.
It suffers from
same
m sam
me drawbacks
drawbaccks
as JFET.
It is not used in silicon
silicon technology.
technology.
MESFETs are used in digital ICs based on compound semiconductors like
gallium arsenide direct-coupled FET logic (DCFL) circuits.
A viable MOSFET technology does not exist in materials such as gallium
arsenide and indium phosphide.
These semiconductors exhibit speed advantages over silicon.
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Chapter 7. Field-Effect Transistors

15

7.2. MOSFET Threshold Voltage

KNTU

Applying a positive bias on metal gate

with respect to semiconductor will
reduce hole concentration near
interface.
This situation is referred to as
depletion condition.
ondition.
Application off a ssufficiently
positive
ufficiently p
ositive
bias on gate will
willl result
resu
ult in
in inversion.
inversio
on .
In this case, semiconductor
becomes
emiconductor b
ecomes
n-type near interface.
It is possible for semiconductor to be inverted to extent that electron
concentration near interface is equal to hole concentration in bulk of
semiconductor.
This is referred to as strong inversion.
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Chapter 7. Field-Effect Transistors

16

7.2. MOSFET Threshold Voltage

KNTU

In an n-channel MOSFET, G-S bias

necessary to cause strong inversion
in channel is called threshold voltage.
Among n-channel MOSFETs:
enhancement-type
ment type transistors
have positive
tive thresholds,
thrresholds,
n-ttype transistors
transistors h
ave
depletion-type
have
negative thresholds.
thrresholds.
Opposite is true ffor p-channel
h
l devices.
d i

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Chapter 7. Field-Effect Transistors

17

7.2. MOSFET Threshold Voltage

KNTU

A body bias (applied between body and source) allows threshold of a

MOSFET to be adjusted in the circuit.
This is exploited to overcome manufacturing tolerances in threshold
voltages.
This technique is used in modern low-power, high-speed CMOS circuits.
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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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Substrate is often shorted to source.

VGS is G-S bias.
VDS is D-S bias.
rent.
ID is drain current.

MOSFET has 3 modes of operation:

cutoff,
linear,
saturation.

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Chapter 7. Field-Effect Transistors

19

7.3. Long-Channel MOSFET Operation

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Cutoff occurs if VGS is insufficiently

positive to induce a conducting channel.
Cutoff results in zero drain current.
If VGS is made more positive than
threshold voltage
tage (V
VT):
a conducting
ting channel
chaannel is
is induced
ind
duceed
an ID can flow.
flo
ow.

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Chapter 7. Field-Effect Transistors

20

7.3. Long-Channel MOSFET Operation

KNTU

With a small VDDSS:

actts like
like a voltage-controlled
voltage-controlled rresistance.
esistance.
MOSFET acts
This is linear (ohmic or triode) mode of operation.
If VDS is sufficiently large:
Conducting channel will pinch off at drain end.
ID saturates.
This mode of operation is called saturation.
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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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In characteristic curves, it is customary

to plot ID vs. VDS with VGS as a parameter.
This results in a family of curves,
one for each particular value of VGS.
Cutoff:
is associated
with
ted wit
th zero
o I D,
on VDDSS axis.
its locus iss on
axis.
on::
In linear region:
ID increases approximately linearly with VDS,
its locus is to left of parabola.
Saturation:
is characterized by a constant ID,
its locus is to right of parabola.
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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.1. MOSFET Cutoff Operation

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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.2. MOSFET Linear Operation

VGS > VT.
VDS is small enough so that channel
does not pinch off at drain end.
MOSFET acts like a voltage-controlled
voltagge-con
ntro
olle
ed
resistance.
ed
d vvariable.
ariable.
RDS is controlled
VGS is controlling variable.
Pinch-off at D end of channel occurs when:
This condition defines boundary between
linear and saturation operation
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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.2. MOSFET Linear Operation

K = device transconductance parameter.

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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.2. MOSFET Linear Operation

k is process transconductance parameter.

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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.2. MOSFET Linear Operation

For p-channel MOSFETs, p must be used

instead of n.
All voltages and currents are opposite
in polarity.
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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.3. MOSFET Saturation Operation

MOSFET acts like

likke a voltage-controlled
voltage-controlled
current source.
ID is controlled quantity.
VGS is controlling quantity.

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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.4. MOSFET Subthreshold Operation

9 Cutoff operation:
n-MOSFET: VGS < VT
p-MOSFET: |VGS| < |VT|
results in ID = 0 to a first approximation.
non-negligible ID will
will flow.
flow..
9 If VGS is close to VT, a non-negligible
holld curr
rent iss im
mporrtant in modern
modeern
n low-voltage,
low-vvolt
9 This subthreshold
current
important
low-power
CMOS and memory
em
mory circuits.
circuits.

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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.4. MOSFET Subthreshold Operation

Saturation or linear operation is dominated by drift of majority carriers.
Subthreshold operation occurs as result of minority carrier diffusion.
Device acts as a BJT.
S injects carriers
ers into
o channel region.
regio
on.
These injected
off cchannel.
d carriers
carriers diffuse
diffuse length
length o
hanneel.
They are collected
ectted by
by D.
D.
In an n-MOSFET:
electrons are injected into p-type channel region
diffuse to D,
resulting in current from D to S.
Subthreshold current flows in same direction as saturated current.
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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.4. MOSFET Subthreshold Operation

al times
tim
mes kkT/q
T/q (~
(~ 2
26
6m
mV
V att room
room temperature),
teemperature subthreshold
If VDS is several
ep
pendent off VDDSS:
current is independent

Subthreshold current increases exponentially with VGS.

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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.4. MOSFET Subthreshold Operation

Subthreshold swing is:

Room-temperature
ratt re operation
ti off M
MOSFETs
OSFET is
i characterized
h
t i d by S = 100 mV.
Subthreshold current changes by 1 decade for every 100-mV change in VGS.
Scaling of VT below about 300 mV is accompanied by significant
subthreshold current at VGS = 0.
This is a significant issue in design of low-power CMOS circuits.
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Chapter 7. Field-Effect Transistors

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7.3. Long-Channel MOSFET Operation

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7.3.5. Transit Time

It takes a finite time for majority carriers to traverse channel in a
conducting MOSFET.
This delay is called transit time (tt).
nnel n-channel MOSFET, elec
ctrons aree d
rifted in channel.
In a long-channel
electrons
drifted
Average electric
intensity
ric field int
tensiityy in channel
ch
hannel is approximately:
app
proxximately
Carriers move at a velocity of approximately:
tt increases with square of channel length:

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Chapter 7. Field-Effect Transistors

33

7.4. Short-Channel MOSFETs

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Aggressive scaling of MOSFETs and channel lengths has resulted in devices

that behave differently than long channel devices.
First, VT becomes a function of channel length (short-channel effect).
Second, electric field intensity in channel may be sufficiently large so that
carriers reach their saturated velocity.
Third, effective
channel
ve cha
annel length
leength
h becomes
becom
mes a function
funcctio
on of
of VDDSS aas a
consequence off cchannel
modulation.
hannel llength
ength m
odulaation.
ctss are
are of
of practical
practical importance
importance in
in design
n of high-performance
hi
All these effects
CMOS circuits.

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Chapter 7. Field-Effect Transistors

34

7.4. Short-Channel MOSFETs

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7.4.1. The Short-Channel Effect

|VT| decreases with decreasing channel length.
7.4.2. Channel Length Modulation
saturrates at VDSS which
wh
hich causes
cau
uses ch
channel
han
nnel to
to pinch
pi
off at D
ID in a MOSFETT saturates
end.
pinch-off
inch
h-off p
point
oint to
to move
move into
into channel,
ase in VDDSS causes p
Further increase
toward S.
This increases ID by ratio L/(L L).
In a long-channel MOSFET, percentage change in ID is small.
Channel length modulation effect is important in short-channel MOSFETs.

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Chapter 7. Field-Effect Transistors

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7.4. Short-Channel MOSFETs

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7.4.2. Channel Length Modulation

ID in a MOSFET saturates at VDS which causes channel to pinch off at D
end.
Further increase in VDS causes pinch-off point to move into channel,
toward S.
eratio
on:
For linear operation:

For saturation operation:

is the empirical channel length modulation parameter.

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Chapter 7. Field-Effect Transistors

36

7.4. Short-Channel MOSFETs

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7.4.3. Velocity Saturation

At high electric-field intensities, carrier drift velocities are no longer
proportional to electric field.
Instead, there is approximately carrier velocity saturation.
turation occurs at a lower VDDSS.
Onset of ID saturation
is lless
ess than
than before.
before.
saaturated ID is
Magnitude off saturated

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Chapter 7. Field-Effect Transistors

37

7.4. Short-Channel MOSFETs

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7.4.4. Transit Time

In short-channel MOSFETs, carriers may travel at close to saturation
velocity for entire channel length.

For electrons::
For holes:
Saturation velocities in silicon MOSFETs are typically 20% lower than bulk
values.
tt is directly proportional to the channel length.
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Chapter 7. Field-Effect Transistors

38