Beruflich Dokumente
Kultur Dokumente
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Objective of Workshop
This
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TM
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Examples
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
can TCAD do
Worst
I saw something funny in the data, run some simulations and tell me whats
causing it
In
When
If you cant simulate the problem, it may be difficult to use TCAD to find the
problem or simulate the solution
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Compact models are fit to a training data set, they can then predict the
performance of a device ~within the range of the training data set
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TM
Outline of Workshop
Vendor
review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Examples
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006.
TM
TCAD Tools
Major
Silvaco
Similarly
There are numerous University codes, these may be useful but dont
typically have the features that make simulations possible in real
problems
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TM
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Examples
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
Process simulation
What
Process
As closely as is reasonable
fabricate the device in simulation
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Process simulation
There are two potential objectives of
process simulation
1.
2.
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TM
Process simulation
Process simulation emulates actual fabrication
There are commands to deposit layers, define doping,
create
For example at AlGaAs InGaAs boundary there is diffusion of Al, In, Ga,
As, these diffusions are typically small and the impact of a thin InAlGaAs
interface material between the AlGaAs InGaAs is not considered
Crystalagraphic
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10
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Examples
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
11
Creating a grid
Edit
The process grid is not well designed for device simulation so the device must be
re-gridded after process simulation specifically for device simulation
Gridding is very important, and
there doesnt seem to be analytical solution for compound semiconductors
most grids require manual intervention
Remember the device is only described in the simulator at the grid points
You want the smallest number of grid points that is sufficient to describe the solution
Your grid will be mechanism dependent
If there are surface traps - decrease the vertical grid spacing at the surface to describe
the trap depletion
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12
Gridding problems
There
Plots of the internal characteristics of the device at this point may reveal the issues
There are ways to dump out the location of the largest update which helps in finding the
problem, and which equation is not converging
Changes to the math, solver, or implementation of the physics may be tried
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13
Solutions
Sweep the gate to turn on the channel before sweeping the drain
Decrease lateral grid spacing slower solution
Build a parallel study in which you increase the grid spacing in high grid
count regions
A courser grid isnt as stiff, and generally converges better overall
Solution cutbacks occur when convergence fails
These cutbacks take more time than a large grid would take
Very small minimum cutbacks (where convergence would fail) are seldom the
solution
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14
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Examples
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
15
Heterostructure TCAD
How
is then used to
determine the potential due to
charge
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Free space
charge
potential
TM
16
Heterostructure TCAD
These
Ec
When
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17
Device Simulation
Device
Material parameters
Mechanisms
Transport
Quantum
Recombination
Traps
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TM
18
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Examples
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
19
Convergence control
RefErrControl
RhsFactor
used
ErrRef(electron)=1e7
ErrRef(hole)=1e7
Keep
x
x
x
<
10
Digits
<
A
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20
Transport Options
I
There
In some software there are issues with the high field saturation model in
barrier materials when using drift diffusion in heterojunction devices
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21
Velocity models
Mobility models
Velocity models
2.
This is vsat_formula = 2
Relaxation times
2.
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22
Velocity model
high field velocity model for
GaAs is shown in the blue curve
This model has negative
differential mobility (NDM)
A saturated velocity model,
similar to that seen in Silicon is
shown in red
Typically this saturated velocity
model is used instead of the
NDM model because of
complexity
Velocity (cm/sec)
The
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2.5 .10
2 .10
1.5 .10
1 .10
5 .10
GaAs
a
10
15
20
kV/cm
TM
23
EDRT (ps)
0.5
1.5
1000
2000
3000
4000
Electron Temperature (K)
5000
Increasing
InGaAs mole
fraction
1.5
EDRT (ps)
0.5
Increasing
AlGaAs mole
fraction
1.5
1000
2000
3000
4000
Electron Temperature (K)
5000
0.5
1000
2000
3000
4000
5000
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TM
24
dWn 3 Tn TL
= 2 k
n + 32 kTn RSRH n + E g Gn RnA
dt
en
R=
wn w0
80
60
40
20
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1000
2000
3000
4000
Electron Temperature (K)
5000
TM
25
Energy vs Field
GaAs,
InGaAs
Energy (eV)
GaAs
AlGaAs
0.1
0.01
3
1 .10
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4
5
1 .10
1 .10
Electric Field (V/cm)
1 .10
TM
26
Trap models
Trap types
Traps are a big deal in compound semiconductors
Uncharged when unoccupied and carry a charge of one electron when occupied
Are uncharged when unoccupied and they carry the charge of one hole when fully occupied
Traps
n = N 0e
E E0 )2
(
2 Es 2
N0
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27
Gradient
Where n is the charge density
mn is the effective mass
is a fit factor
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28
Quantization model
In
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TM
29
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Examples
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
30
Gate Leakage
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TM
31
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32
Electron Tunneling
e
II
Gate
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Ec
h
Ev
PHEMT Structure
TM
33
ionization generation
AlGaAs
in 10% molefraction
increments
InGaAs
20% molefraction
Impact ionization
Generation
alpha
GaAs
1 . 10
1 . 10
1 . 10
1 . 10
1 . 10
1 . 10
InGaAs
GaAs
100
10
AlGaAs
1
0.1
0
1 .10
6
6
3 .10
1/Electric Field (cm/V)
2 .10
4 . 10
5 .10
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34
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Examples
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
35
Continuity : J n = qRnet + q
LU
h 2 2 n
6mn n
J F ( xn )( xn +1 xn ) = F ( xn )
xn +1 = xn J F ( xn ) 1 F ( xn )
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TM
36
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Examples
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
37
DC Solution
Electrode {
{ Name="Source" Voltage=0 Resistor=417}
{ Name="Drain" Voltage=0 Resistor=417}
{ Name="Gate" Voltage=0 WorkFunction=5.2 Resistor=300 }
{ Name="substrate" Voltage=0 schottky barrier=0.7 }
}
File {
Grid = "input/ggofet_mdr"
Doping = "input/ggofet_mdr"
Note that electrodes are
Current = "d_ox/plot"
Output = "d_ox/log"
defined with resistor values
Plot = "d_ThuFeb15122658200719/dat"
that are scaled by the
Parameter = "../../common_files/specific.par"
}
areafactor here it is 1000, so
Plot {
EtrappedCharge
the actual source resistance
Egapstatesrecombination
htrappedcharge
implied Is 0.417
hgapstatesrecombination
Potential Electricfield
eDensity hDensity
eCurrent/Vector hCurrent/Vector
TotalCurrent/Vector
SRH Auger
eMobility hMobility
eQuasiFermi hQuasiFermi
eGradQuasiFermi hGradQuasiFermi
eEparallel hEparallel
eMobility hMobility
eVelocity hVelocity
DonorConcentration AcceptorcCncentration
Doping SpaceCharge
ConductionBand ValenceBand
BandGap Affinity
xMoleFraction
eTemperature hTemperature
}
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TM
38
CNormPrint
Fermi
device
= 1000 is a 1 mm
Math {
CNormPrint
Extrapolate
Digits = 5
NotDamped=1000
Iterations=25
NewDiscretization
ConstRefPot
ElementEdgeCurrent
Derivatives
RelErrcontrol
NUpperLimit=1e40
RhsFactor=1e20
CdensityMin=1e-10
ErrRef(electron)=1e8
ErrRef(hole) =1e8
DirectCurrent
}
DC Solution
Physics {
Fermi
eQuantumPotential
HeteroInterfaces
AreaFactor = 1000
Hydro(etemperature)
Recombination( SRH Auger )
}
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TM
39
DC Solution
Physics ( Material = "AlGaAs" ) {
MoleFraction(
XFraction=0.2
)
EffectiveIntrinsicDensity( Nobandgapnarrowing )
Traps(
(Acceptor Conc=1e14 EnergyMid=0.62 fromCondBand
eXsection=1e-14 hXsection=2e-13)
(Donor Conc=1e15 EnergyMid=0.61 fromValBand
eXsection=2e-18 hXsection=2e-18)
)
Mobility (
eHighFieldSaturation(CarrierTempDrive)
hHighFieldSaturation(GradQuasiFermi)
)
}
Physics ( Material = "InGaAs" ) {
EffectiveIntrinsicDensity( Nobandgapnarrowing )
MoleFraction(
XFraction=0.3
)
Mobility (
eHighFieldSaturation(CarrierTempDrive)
hHighFieldSaturation(GradQuasiFermi)
)
}
Physics ( MaterialInterface = "Oxide/GaAs" ) {
Traps(conc=-1e9 fixedcharge)
}
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40
Solve {
Coupled(Iterations=50) { Poisson }
Coupled(Iterations=50) { Poisson Electron Hole }
Coupled(Iterations=50) { Poisson eQuantumPotential }
Coupled(Iterations=50) { Poisson Electron Hole eTemperature eQuantumPotential }
Quasistationary (
InitialStep=2e-2 Minstep=1e-8 MaxStep=0.20 Increment=1.4
Goal { Name="Gate" Voltage=2 }
){
Coupled { Poisson Electron Hole eTemperature eQuantumPotential }
currentplot ( time=(range=(0 1) intervals=40 ) )
}
Quasistationary (
InitialStep=5e-2 Minstep=1e-8 MaxStep=0.20 Increment=1.4
Goal { Name="Drain" Voltage=2.0 }
){
Coupled { Poisson Electron Hole eTemperature eQuantumPotential }
currentplot ( time=(range=(0 1) intervals=5 ) )
}
Quasistationary (
InitialStep=5e-2 Minstep=1e-8 MaxStep=0.20 Increment=1.4
Goal { Name="Drain" Voltage=2.0 }
){
Coupled { Poisson Electron Hole eTemperature eQuantumPotential }
currentplot ( time=(range=(0 1) intervals=5 ) )
}
}
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DC Solution
TM
41
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Examples
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Calibration
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
42
Mixed
}
Plot
}
Math
}
File
}
System {
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TM
43
Solve {
Coupled(Iterations=100) { Poisson }
Coupled(Iterations=50) { Poisson Electron Hole }
Coupled(Iterations=50) { Poisson eQuantumPotential }
Coupled(Iterations=50) { Poisson Electron Hole eTemperature eQuantumPotential }
AC solution
Quasistationary (
InitialStep=1e-2 Minstep=1e-7 MaxStep=0.2 Increment=1.4
Goal { Parameter=v_g.dc Voltage= 2.0 }
){
Coupled { Poisson Electron Hole eTemperature eQuantumPotential }
}
Quasistationary (
InitialStep=1e-2 Minstep=1e-7 MaxStep=0.2 Increment=1.4
Goal { Parameter=v_d.dc Voltage= 2 }
){
Coupled { Poisson Electron Hole eTemperature eQuantumPotential }
}
Quasistationary (
InitialStep=1e-2 Minstep=1e-7 MaxStep=0.2 Increment=1.4
Goal { Parameter=v_g.dc Voltage= 0 }
){
currentplot (time=(range=(0 1) intervals=40 ) )
ACCoupled ( StartFrequency=0.5e9 EndFrequency=20.0e9 NumberOfPoints=39 Linear
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TM
44
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Calibration
HBT/BJT
Examples
Objectives of simulation
HBT
GaAs MOSFET
DC
AC
Calibration
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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TM
45
Calibration
What does it mean?
First: Determine every parameter possible from measured data and from the literature
For the parameter values that cannot be determined determine the reasonable
range
Calibration
Get only the parameters that cannot be directly determined from comparison of simulation to
measured data
Use only values for these parameters that are within the reasonable range for that value
Objective of this procedure is to keep the device simulation physical
Can be viewed as a fudge, or it can be viewed as a creative way of measuring that parameter
As a result the model is only valid in the range of the measured data it was fit to
Physical device simulation uses a physical description of the device and mechanisms at grid points
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TM
46
3.
4.
5.
6.
7.
When you are done the resistances in each region of the device should add
up to the on resistance, this is a useful check and allows you to look for
inconsistencies
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47
2.
3.
3.
4.
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48
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Examples
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Calibration
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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49
past
Fets
HBTs
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TM
50
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Examples
Objectives of simulation
HBT
GaAs MOSFET
Switch transient simulation under mixed mode
Large signal
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Calibration
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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Example HBT
HBTs
emitter
base
collector
Base p+
Emitter n
Collector nCollector n+
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52
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Calibration
Examples
Objectives of simulation
HBT
GaAs MOSFET
DC
AC
Calibration
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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device as a Gadolinium
GaAs Oxide layer under the gate,
it employs delta doping and a
InGaAs Channel
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Planar
doping
TM
55
activation of charge is
adjusted to about 0.65 (out of
1.0) to get the threshold seen in
the measured data
-0.50
ID (mA/mm)
gm (mS/mm)
sim Id/Vd
sim Gm
0.50
1.00
1.50
2.00
2.50
Log(Id)/Vg
characteristic shows
the sub-threshold swing (s) of
100 [mv/dec]
500
450
400
350
300
250
200
150
100
50
0
0.00
100
10
1
0.10.00
-0.50
0.50
1.00
0.01
1.50
2.00
2.50
ID (mA/mm)
0.001
sim Id/Vd
0.0001
0.00001
Gate Voltage (V)
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56
saturation velocity to
1.3e7 cm/sec
This is not completely
physical
Set
450
400
350
300
250
measured vg=2
simulated
200
150
100
50
0
-50 0
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0.5
1.5
2.5
TM
57
of
par
Simulation
Measured
Error
Units
some of the
device
characteristics to
measured data
Vth
0.254
0.25-0.27
on
volts
Ron
2.23
2.25
0.9%
ohm mm
100
106
6%
mv/dec
Idss
427
435-421
>2%
mA
Rsh
461
449
2.6%
mA
Rc
0.617
0.417
47%
ohm mm
Differences
Rc suggest
in
The meas Rc is
bad, or
The sim has
lower Rch
Check
Ron = 2*Rc + 0.85*2*Rsh + Lg*Rch 2.25
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Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Calibration
Examples
Objectives of simulation
HBT
GaAs MOSFET
DC
AC
Calibration
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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AC characteristics
The
Intrinsic Device
Extrinsic Device
(R_ s + L_ s 1i)
R_ g + L_ g 1i + ( R_ s + L_ s 1i)
R_ d + L_ d 1i + ( R_ s + L_ s 1i)
(R_ s + L_ s 1i)
Then
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60
S parameters
Sintrinisic
G+iA
Z+Ze
Sextrinsic
60
150
90
30
120
90
60
120
0.04
150
30
S22
180
S11
330
330
240
300
240
GridZ
s11
180
210
330
240
270
S12 (
30
210
210
60
10
150
0.02
180
15
300
270
S21
300
270
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61
25
Maximum Practical Gain (dB)
S21/S12
2
Maximum
Stable
Gain
20
3.5
TCAD
15
10
Maximum
Available
Gain
0
0
0.1
10
100
Frequency (GHz)
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62
You must have a good handle on parasitics to get the right answer
Impact
30
of Source
Inductance is to significantly
reduce the corner frequency
which results in lower gain at
high frequency
25
20
15
Ls
0 pH
10
30 pH
5
0.1
10
100
Frequency (GHz)
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63
You must have a good handle on parasitics to get the right answer
This
30
25
20
15
Rg
10
0.5
2.5
0
0.1
10
100
Frequency (GHz)
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64
Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Calibration
Examples
Objectives of simulation
HBT
GaAs MOSFET
DC
AC
Calibration
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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65
Switch implemented
with PHEMT multi gate
switches
DC I/V
S param
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*
* Switch circuit
*----------------------------------------------------------------------*
}
More complex mixed mode simulations can be done including ones with
multiple active devices and ideal passive components, here a single pole double
throw circuit is described
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67
Off device
Looks is modeled
On device
looks like
a resistor
Switch Simulation
Solve {
*----------------------------------------------------------------------*
*--Computing initial guess:
NewCurrentFile=off
circuit
Coupled( Iterations=100 ){ Poisson Contact Circuit }
Coupled { Poisson Contact Circuit Electron Hole eTemperature }
Quasistationary (
InitialStep=1e-2 Increment=1.2 Minstep=1e-8 MaxStep=0.1
Goal{ parameter=vc.dc Value=-3 } )
{
Coupled { Poisson Contact Circuit Electron Hole eTemperature }
}
NewCurrentFile=off_
Transient (
InitialTime=0 FinalTime=2e-9
InitialStep=3.90625e-12 MaxStep=3.90625e-12 MinStep=1e-17
Increment=1.2
)
{
Coupled { Poisson Contact Circuit Electron Hole eTemperature }
CurrentPlot (
Time = ( Range=( 0.0 2e-9 ) intervals=512 )
)
}
plot
}
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Transient Simulations
This
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Outline of Workshop
Vendor review
Objective of simulation
General simulation flow
Process simulation
Gridding
Device simulation
Heterostructure simulation
Convergence
Transport options
Trap models
Stress
Quantum correction
Material properties
Special topics
Calibration
Examples
Objectives of simulation
HBT
GaAs MOSFET
DC
AC
Calibration
Gate leakage
Solutions in TCAD
DC Simulation syntax
Mixed mode
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70
Large Signal
There are three ways to do large signal simulations using TCAD
1.
2.
3.
20
10
16.76
Gain
64
25
PAE (%)
20
Pout (dBm)
15.84
Pout
62.3
50
PAE (%)
Gain (dB)
60.3
PAE
10
22.26
0
-30
-20
-10
-30
-20
-10
0
Pin (dBm)
22
0
10
20
-30
-20
-10
10
22.54
-10
20
10
22.2 22.4 22.6 22.8
20
23
Pout (dBm)
Pin (dBm)
Pin (dBm)
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In Review
Heterostructure
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References
Hartin, O., et al. (2001). Compound Semiconductor Physical Device Simulation for Technology Development at
Motorola. GaAs IC Symposium 23rd Annual Technical Digest:163-165
Li, P. H., et al. (2002). An updated temperature-dependent breakdown coupling model including both impact ionization
and tunneling mechanisms for AlGaAs/InGaAs HEMTs. IEEE Transactions on Electron Devices 49(9): 1675-1678.
Quay, R. (2001). Analysis and Simulation of High Electron Mobility Transistors. Electrical Engineering. Freiburg,
Technischen Universitt Wien Fakultt fr Elektrotechnik und Informationstechnik.
Klimeck, G., R. Lake, et al. (1996). Nemo: A General Purpose Quantum Device Simulator. Texas Instruments
Research Colloquium, Dallas, TX.
Sentaraus Manual version Y-2006.06
Silvaco Atlas Manual 5th Edition, 1997
Kalna, K., et al. (2007). Monte Carlo Simulations of High-Performance Implant Free In0.3Ga0.7As Nano-MOSFETs
for Low-Power CMOS Applications. IEEE Transactions on Nanotechnology 6(1).
Rajagopalan, et al. (2007). 1-m Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding
250 mS/mm. IEEE ELECTRON DEVICE LETTERS 28(2).
Adachi, S., Ed. (1993). Properties of Aluminum Gallium Arsenide. EMIS Data Reviews Series. London, INSPEC, the
Institution of Electrical Engineers.
Adachi, S. (1994). GaAs and Related Materials: Bulk Semiconducting and Superlattice properties. London, World
Scientific.
Vendelin, G. D., A. M. Pavio, et al. (1990). Microwave Circuit Design. New York.
Lundstrom, M. (1990). Fundamentals of Carrier Transport. Reading, Ma., Addison Wesley Publishing Co.
Vogl, P. (1983). A Semi-Empirical Tight-Binding Theory of the Electronic Structure of Semiconductors. Journal of the
Physical Chemistry of Solids 44(5): 365-378.
Wolfe, C. M., J. Nick Holonyak, et al. (1989). Physical Properties of Semiconductors. Engelwood Cliffs, New Jersey,
Prentice hall.
Blakey, P. A., Ed. (2001). Technology Computer Aided Design. The RF Microwave Handbook. London, CRC Press.
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73
TM