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FQP30N06L

N-Channel QFET MOSFET


60 V, 32 A, 35 m
Description

Features

This N-Channel enhancement mode power MOSFET is


produced using Fairchild Semiconductors proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.

32 A, 60 V, RDS(on) = 35 m (Max.) @ VGS = 10 V,


ID = 16 A
Low Gate Charge (Typ. 15 nC)
Low Crss (Typ. 50 pF)
100% Avalanche Tested
175C Maximum Junction Temperature Rating

GD
S

TO-220
S

Absolute Maximum Ratings


Symbol
VDSS
ID

TC = 25C unless otherwise noted.

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
- Continuous (TC = 100C)

IDM

Drain Current

- Pulsed

(Note 1)

FQP30N06L
60

Unit
V

32

22.6

128

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note 2)

IAR

Avalanche Current

(Note 1)

32

EAR

Repetitive Avalanche Energy


Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)

(Note 1)

7.9
7.0
79
0.53
-55 to +175

mJ
V/ns
W
W/C
C

300

FQP30N06L
1.90

Unit
C/W

62.5

C/W

dv/dt
PD
TJ, TSTG
TL

(Note 3)

- Derate above 25C


Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds

20

350

mJ

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case, Max.

RJA

Thermal Resistance, Junction-to-Ambient, Max.

2001 Fairchild Semiconductor Corporation


FQP30N06L Rev. C1

www.fairchildsemi.com

FQP30N06L N-Channel QFET MOSFET

November 2013

Part Number
FQP30N06L

Top Mark
FQP30N06L

Package
TO-220

Electrical Characteristics
Symbol

Packing Method
Tube

Reel Size
N/A

Tape Width
N/A

Quantity
50 units

TC = 25C unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Unit

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

60

--

--

BVDSS
/ TJ

Breakdown Voltage Temperature


Coefficient

ID = 250 A, Referenced to 25C

--

0.06

--

V/C

VDS = 60 V, VGS = 0 V

--

--

VDS = 48 V, TC = 150C

--

--

10

IDSS
IGSSF
IGSSR

Zero Gate Voltage Drain Current


Gate-Body Leakage Current, Forward

VGS = 20 V, VDS = 0 V

--

--

100

nA

Gate-Body Leakage Current, Reverse

VGS = -20 V, VDS = 0 V

--

--

-100

nA

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

1.0

--

2.5

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 16 A
VGS = 5 V, ID =16 A

---

0.027
0.035

0.035
0.045

gFS

Forward Transconductance

VDS = 25 V, ID = 16 A

--

24

--

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

--

800

1040

pF

--

270

350

pF

--

50

65

pF

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 30 V, ID = 16 A,
RG = 25
(Note 4)

VDS = 48 V, ID = 32 A,
VGS = 5 V
(Note 4)

--

15

40

ns

--

210

430

ns

--

60

130

ns

--

110

230

ns

--

15

20

nC

--

3.5

--

nC

--

8.5

--

nC

Drain-Source Diode Characteristics and Maximum Ratings


IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

32

ISM

--

--

128

VSD

Maximum Pulsed Drain-Source Diode Forward Current


VGS = 0 V, IS = 32 A
Drain-Source Diode Forward Voltage

--

--

1.5

trr

Reverse Recovery Time

--

60

--

ns

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 32 A,
dIF / dt = 100 A/s

--

90

--

nC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 400 H, IAS = 32 A, VDD = 25 V, RG = 25 , starting TJ = 25C.
3. ISD 32 A, di/dt 300 A/us, VDD BVDSS, starting TJ = 25C.
4.Essentially independent of operating temperature.

2001 Fairchild Semiconductor Corporation


FQP30N06L Rev. C1

www.fairchildsemi.com

FQP30N06L N-Channel QFET MOSFET

Package Marking and Ordering Information

10

Top :

ID, Drain Current [A]

ID, Drain Current [A]

VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V

10

10

10

175
25

Notes :
1. 250 s Pulse Test
2. TC = 25

Notes :
1. VDS = 25V
2. 250 s Pulse Test

-55

10
-1
10

10

10

10

VDS, Drain-Source Voltage [V]

10

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

80
2

IDR, Reverse Drain Current [A]

RDS(ON) [m ],
Drain-Source On-Resistance

10

60

VGS = 5V

VGS = 10V

40

20

Note : TJ = 25

10

20

40

60

80

100

10

120

0.4

0.6

ID, Drain Current [A]

2000

1.2

1.4

1.6

12

V G S , Gate-Source Voltage [V]

Coss
Ciss
Notes :
1. VGS = 0 V
2. f = 1 MHz

1000

Crss
500

0
-1
10

1.0

Figure 4. Body Diode Forward Voltage


Variation vs. Source Current
and Temperature

Ciss = Cgs + Cgd (Cds = shorted)


Coss = Cds + Cgd
Crss = Cgd

1500

0.8

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.


Drain Current and Gate Voltage

Capacitance [pF]

Notes :
1. VGS = 0V
2. 250 s Pulse Test

25

175

10

VDS = 30V
VDS = 48V

2
Note : ID = 32A

0
0

10

10

Figure 5. Capacitance Characteristics

2001 Fairchild Semiconductor Corporation


FQP30N06L Rev. C1

10

15

20

25

30

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

Figure 6. Gate Charge Characteristics

www.fairchildsemi.com

FQP30N06L N-Channel QFET MOSFET

Typical Characteristics

2.5

RDS(ON), (Normalized)
Drain-Source On-Resistance

BVDSS, (Normalized)
Drain-Source Breakdown Voltage

1.2

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

150

2.0

1.5

1.0

0.5

Notes :
1. VGS = 10 V
2. ID = 16 A

0.0
-100

200

-50

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation


vs. Temperature

Figure 8. On-Resistance Variation


vs. Temperature

40

10

ID, Drain Current [A]

ID, Drain Current [A]

Operation in This Area


is Limited by R DS(on)

100 s
1 ms
10 ms
DC

10

Notes :

30

20

10

1. TC = 25 C
o

2. TJ = 175 C
3. Single Pulse

0
25

10
-1
10

10

10

10

50

ZZJC
(t),
(t),Thermal
Therm al
Response
Response
[oC/W]
JC

Figure 9. Maximum Safe Operating Area

10

125

150

175

D = 0 .5
0 .2

N otes :
1 . Z J C( t ) = 1 . 9 0 /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )

0 .0 5

-1

0 .0 2
0 .0 1

PDM
t1

s in g le p u ls e

10

100

Figure 10. Maximum Drain Current


vs. Case Temperature

0 .1
10

75

TC, Case Temperature []

VDS, Drain-Source Voltage [V]

t2

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

2001 Fairchild Semiconductor Corporation


FQP30N06L Rev. C1

www.fairchildsemi.com

FQP30N06L N-Channel QFET MOSFET

Typical Characteristics (continued)

50K
200nF

12V

FQP30N06L N-Channel QFET MOSFET

VGS

Same Type
as DUT

Qg

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
IG = const.
3mA

Charge
Figure 12. Gate Charge Test Circuit & Waveform

VDS
RG

RL

VDS

90%

VDD

VGS

VGS

DUT

V
10V
GS

10%

td(on)

tr

td(off)

t on

tf
t off

Figure 13. Resistive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD

V
10V
GS
GS

ID (t)
VDS (t)

VDD

DUT
tp

tp

Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

2001 Fairchild Semiconductor Corporation


FQP30N06L Rev. C1

www.fairchildsemi.com

FQP30N06L N-Channel QFET MOSFET

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width


D = -------------------------Gate Pulse Period

VGS
( Driver )

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

2001 Fairchild Semiconductor Corporation


FQP30N06L Rev. C1

www.fairchildsemi.com

FQP30N06L N-Channel QFET MOSFET

Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB


Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003

2001 Fairchild Semiconductor Corporation


FQP30N06L Rev. C1

www.fairchildsemi.com

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.


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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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expected to result in a significant injury of the user.

2.

A critical component in any component of a life support, device, or


system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications


may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later


date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to


make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild


Semiconductor. The datasheet is for reference information only.
Rev. I66

2001 Fairchild Semiconductor Corporation


FQP30N06L Rev. C1

www.fairchildsemi.com

FQP30N06L N-Channel QFET MOSFET

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